公开(公告)号：US09593412B2

公开(公告)日：2017-03-14

申请号：US14069754

申请日：2013-11-01

Applicant: CANON ANELVA CORPORATION

Inventor： Nobuo Yamaguchi ,  Kimiko Mashimo ,  Shinya Nagasawa

IPC: C23C14/00 ,  C23C14/35 ,  C23C14/56 ,  H01J37/34

CPC classification number: C23C14/564 ,  C23C14/0036 ,  C23C14/35 ,  H01J37/34 ,  H01J37/3447 ,  H01J37/3464

Abstract: A deposition apparatus includes a shutter storage unit which is connected to a processing chamber via an opening and stores a shutter in the retracted state into an exhaust chamber, and a shield member which is formed around the opening of the shutter storage unit and covers the exhaust port of the exhaust chamber. The shield member has, at a position of a predetermined height between the opening of the shutter storage unit and a deposition unit, the first exhaust path which communicates with the exhaust port of the exhaust chamber.

Abstract translation: 沉积装置包括快门存储单元，其经由开口连接到处理室，并将处于缩回状态的快门存储到排气室中;以及屏蔽构件，其围绕快门存储单元的开口形成并覆盖排气 排气室的端口。 在挡板存储单元的开口和沉积单元之间的预定高度的位置处具有与排气室的排气口连通的第一排气路径。

公开(公告)号：US10083830B2

公开(公告)日：2018-09-25

申请号：US15161892

申请日：2016-05-23

Applicant: CANON ANELVA CORPORATION

Inventor： Takuya Seino ,  Manabu Ikemoto ,  Kimiko Mashimo

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/67 ,  H01J37/32 ,  H01L29/51 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L21/02049 ,  H01J37/32091 ,  H01J37/3244 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/67196 ,  H01L29/4916 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/517 ,  H01L29/66651

Abstract: It was found out that when radicals generated by plasma are fed to a treatment chamber via a plurality of holes (111) formed on a partition plate which separates a plasma-forming chamber (108) from the treatment chamber, and the radicals are mixed with a treatment gas which is separately fed to the treatment chamber, the excitation energy of the radicals is suppressed and thereby the substrate surface treatment at high Si-selectivity becomes possible, which makes it possible to conduct the surface treatment of removing native oxide film and organic matter without deteriorating the flatness of the substrate surface. The radicals in the plasma are fed to the treatment chamber via radical-passing holes (111) of a plasma-confinement electrode plate (110) for plasma separation, the treatment gas is fed to the treatment chamber (121) to be mixed with the radicals in the treatment chamber, and then the substrate surface is cleaned by the mixed atmosphere of the radicals and the treatment gas.

公开(公告)号：US20140054164A1

公开(公告)日：2014-02-27

申请号：US14069754

申请日：2013-11-01

Applicant: CANON ANELVA CORPORATION

Inventor： Nobuo Yamaguchi ,  Kimiko Mashimo ,  Shinya Nagasawa

IPC: C23C14/35

CPC classification number: C23C14/564 ,  C23C14/0036 ,  C23C14/35 ,  H01J37/34 ,  H01J37/3447 ,  H01J37/3464

Abstract: A deposition apparatus includes a shutter storage unit which is connected to a processing chamber via an opening and stores a shutter in the retracted state into an exhaust chamber, and a shield member which is formed around the opening of the shutter storage unit and covers the exhaust port of the exhaust chamber. The shield member has, at a position of a predetermined height between the opening of the shutter storage unit and a deposition unit, the first exhaust path which communicates with the exhaust port of the exhaust chamber.

Abstract translation: 沉积装置包括快门存储单元，其经由开口连接到处理室，并将处于缩回状态的快门存储到排气室中;以及屏蔽构件，其围绕快门存储单元的开口形成并覆盖排气 排气室的端口。 在挡板存储单元的开口和沉积单元之间的预定高度的位置处具有与排气室的排气口连通的第一排气路径。