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1.发明授权
公开(公告)号：US5362682A
公开(公告)日：1994-11-08
申请号：US31536
申请日：1993-03-15
IPC分类号： C30B25/04 , C30B33/00 , H01L21/20 , H01L25/04 , H01L31/0687 , H01L31/18 , H01S5/02 , C30B25/22
CPC分类号： H01L31/0687 , C30B25/04 , C30B29/60 , C30B33/00 , H01L21/02381 , H01L21/02395 , H01L21/02422 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/02639 , H01L21/02647 , H01L21/2007 , H01L31/043 , H01L31/18 , H01L31/1804 , H01L31/184 , H01L2924/0002 , H01S2304/12 , H01S5/0207 , H01S5/0217 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10S117/913 , Y10S117/915 , Y10S148/023 , Y10S148/103 , Y10S148/105
摘要： A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is optionally separated so that the substrate can be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.
摘要翻译： 公开了一种制造结晶材料片的方法，以及采用这种片材的装置。 在该方法中，在衬底上形成生长掩模，并且在通过掩模暴露的衬底的区域上生长晶体材料，并且在掩模的表面上横向地生长结晶材料片。 任选地将该片分离，使得可以重复使用基底。 该方法在形成用于固态器件的晶体半导体材料片中是特别重要的。
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公开(公告)号：US4837182A
公开(公告)日：1989-06-06
申请号：US128809
申请日：1987-12-04
IPC分类号： C30B19/00 , C30B25/02 , C30B25/04 , C30B33/00 , H01L21/20 , H01L21/263 , H01L21/84 , H01L25/04 , H01L31/04 , H01L31/042 , H01L31/0687 , H01L31/18 , H01S5/02
CPC分类号： H01L31/0687 , C30B25/04 , C30B29/60 , C30B33/00 , H01L21/02002 , H01L21/02381 , H01L21/02461 , H01L21/02463 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/2007 , H01L31/043 , H01L31/18 , H01L31/1804 , H01L31/184 , H01L2221/68318 , H01L2924/0002 , H01S5/0207 , H01S5/0217 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10S117/902 , Y10S117/904 , Y10S117/905 , Y10S117/915 , Y10S148/026 , Y10S148/048 , Y10S148/054 , Y10S148/09 , Y10S148/135 , Y10S438/977
摘要： A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is optionally separated so that the substrate can be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.
摘要翻译： 公开了一种制造结晶材料片的方法，以及采用这种片材的装置。 在该方法中，在衬底上形成生长掩模，并且在通过掩模暴露的衬底的区域上生长晶体材料，并且在掩模的表面上横向地生长结晶材料片。 任选地将该片分离，使得可以重复使用基底。 该方法在形成用于固态器件的晶体半导体材料片中是特别重要的。
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3.发明授权
公开(公告)号：US5217564A
公开(公告)日：1993-06-08
申请号：US844894
申请日：1992-03-02
IPC分类号： C30B25/04 , C30B33/00 , H01L21/20 , H01L31/0687 , H01S5/02
CPC分类号： H01L31/0687 , C30B25/04 , C30B29/60 , C30B33/00 , H01L21/02381 , H01L21/02395 , H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/02639 , H01L21/02647 , H01L21/2007 , H01S5/0207 , H01S5/0217 , Y02E10/544 , Y10S117/915 , Y10S438/977 , Y10S438/98
摘要： A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline mateGOVERNMENT SUPPORTWork described herein was supported by the U.S. Air Force.
摘要翻译： 公开了一种制造结晶材料片的方法，以及采用这种片材的装置。 在该方法中，在衬底上形成生长掩模，并且在通过掩模暴露的衬底的区域上生长晶体材料，并且在掩模的表面上横向地生长结晶材料片。 任选地将该片分离，使得可以重复使用基底。 该方法在形成用于固态器件的晶体半导体材料片中是特别重要的。
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4.发明授权Method of producing tandem solar cell devices from sheets of crystalline material 失效从结晶材料片制造串联太阳能电池器件的方法
公开(公告)号：US4816420A
公开(公告)日：1989-03-28
申请号：US128771
申请日：1987-12-04
IPC分类号： C30B19/00 , C30B25/02 , C30B25/04 , C30B33/00 , H01L21/20 , H01L21/263 , H01L21/84 , H01L25/04 , H01L31/04 , H01L31/042 , H01L31/0687 , H01L31/18 , H01S5/02
CPC分类号： H01L31/0687 , C30B25/04 , C30B29/60 , C30B33/00 , H01L21/02002 , H01L21/02381 , H01L21/02461 , H01L21/02463 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/2007 , H01L31/043 , H01L31/18 , H01L31/1804 , H01L31/184 , H01L2221/68318 , H01L2924/0002 , H01S5/0207 , H01S5/0217 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10S117/902 , Y10S117/904 , Y10S117/905 , Y10S117/915 , Y10S148/026 , Y10S148/048 , Y10S148/054 , Y10S148/09 , Y10S148/135 , Y10S438/977
摘要： A method of producing sheets of crystalline material is disclosed which is employed in the construction of tandem solar cells. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is then separated and used to form a tandem solar cell while the substrate can be reused to form additional sheets.
摘要翻译： 公开了一种制造结晶材料片的方法，其用于构建串联太阳能电池。 在该方法中，在衬底上形成生长掩模，并且在通过掩模暴露的衬底的区域处生长结晶材料并且横向覆盖在掩模的表面上以形成结晶材料片。 然后将该片材分离并用于形成串联太阳能电池，同时可以将衬底重新用于形成附加的片材。
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5.发明授权Method of forming electrical contact and antireflection layer on solar cells 失效在太阳能电池上形成电接触和抗反射层的方法
公开(公告)号：US4248675A
公开(公告)日：1981-02-03
申请号：US124083
申请日：1980-02-25
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/04
CPC分类号： H01L31/022425 , H01L31/02168 , Y02E10/50
摘要： A method of applying an electrical contact and an anodic reflection coating to an n.sup.+ layer of a direct gap semiconductor device, comprising applying an anodizable metal contact to the n.sup.+ layer and thereafter anodizing the n.sup.+ layer whereby its thickness is reduced and an antireflection layer is formed thereover.
摘要翻译： 一种向直接间隙半导体器件的n +层施加电接触和阳极反射涂层的方法，包括将阳极氧化金属接触施加到n +层，然后阳极氧化n +层，由此其厚度减小并形成抗反射层 在那里
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公开(公告)号：US4227941A
公开(公告)日：1980-10-14
申请号：US22405
申请日：1979-03-21
IPC分类号： H01L31/0216 , H01L31/0693 , H01L31/06
CPC分类号： H01L31/0693 , H01L31/02168 , Y02E10/544
摘要： Improvements in shallow-homojunction solar cells based upon a plurality of layers of a direct gap semiconductor material such as GaAs, as well as their fabrication, are disclosed. The shallow-homojunction solar cells have a n.sup.+ /p/p.sup.+ structure in which the n.sup.+ top layer is limited to a thickness which permits significant carrier generation to occur in a lower semiconductor layer. An anodic antireflection coating is applied over the n.sup.+ top layer, and a particularly preferred method for applying the antireflection coating is by anodization. These solar cells can be grown on relatively inexpensive substrates, if desired, such as silicon or germanium.
摘要翻译： 公开了基于诸如GaAs的直接间隙半导体材料的多层的浅同相结合太阳能电池的改进以及它们的制造。 浅同相结合太阳能电池具有n + / p / p +结构，其中n +顶层被限制为允许在较低半导体层中发生显着的载流子产生的厚度。 在n +顶层上施加阳极抗反射涂层，并且用于施加抗反射涂层的特别优选的方法是通过阳极氧化。 如果需要，这些太阳能电池可以在相对便宜的基底上生长，例如硅或锗。
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7.发明授权
公开(公告)号：US5549747A
公开(公告)日：1996-08-27
申请号：US227486
申请日：1994-04-14
IPC分类号： C30B19/00 , C30B25/02 , C30B25/04 , C30B33/00 , H01L21/20 , H01L21/263 , H01L21/84 , H01L25/04 , H01L31/04 , H01L31/042 , H01L31/0687 , H01L31/18 , H01S5/02 , C30B13/18
CPC分类号： H01L31/0687 , C30B25/04 , C30B29/60 , C30B33/00 , H01L21/02002 , H01L21/02381 , H01L21/02461 , H01L21/02463 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/2007 , H01L31/043 , H01L31/18 , H01L31/1804 , H01L31/184 , H01L2221/68318 , H01L2924/0002 , H01S5/0207 , H01S5/0217 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10S117/902 , Y10S117/904 , Y10S117/905 , Y10S117/915 , Y10S148/026 , Y10S148/048 , Y10S148/054 , Y10S148/09 , Y10S148/135 , Y10S438/977
摘要： A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is optionally separated so that the substrate can be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.
摘要翻译： 公开了一种制造结晶材料片的方法，以及采用这种片材的装置。 在该方法中，在衬底上形成生长掩模，并且在通过掩模暴露的衬底的区域上生长晶体材料，并且在掩模的表面上横向地生长结晶材料片。 任选地将该片分离，使得可以重复使用基底。 该方法在形成用于固态器件的晶体半导体材料片中是特别重要的。
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8.发明授权
公开(公告)号：US4518219A
公开(公告)日：1985-05-21
申请号：US463568
申请日：1983-02-03
CPC分类号： G02B6/131
摘要： A three-dimensional optical waveguide is disclosed. This waveguide comprises a single crystal semiconductor layer grown upon an insulator which has an index of refraction lower than the semiconductor. The semiconductor layer has a thickness which provides confinement of light propagating in the semiconductor layer in the vertical direction. An effective larger index of refraction over a cross-sectional region of the semiconductor layer provides confinement of light in the lateral direction. This lateral confinement is achieved by side walls in the semiconductor layer which extend toward, but fall short of, the insulator layer.
摘要翻译： 公开了一种三维光波导。 该波导包括在绝缘体上生长的单晶半导体层，其具有低于半导体的折射率。 半导体层具有在垂直方向上提供在半导体层中传播的光的限制的厚度。 在半导体层的横截面区域上的有效的较大的折射率提供了在横向方向上的光的限制。 该侧向约束由半导体层中的侧壁延伸，但是绝缘层延伸但不短。
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公开(公告)号：US5328549A
公开(公告)日：1994-07-12
申请号：US845006
申请日：1992-03-03
CPC分类号： H01L31/0687 , C30B25/04 , C30B29/60 , C30B33/00 , H01L21/02381 , H01L21/02395 , H01L21/02433 , H01L21/02529 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/02639 , H01L21/02647 , H01L21/2007 , H01L31/043 , H01L31/18 , H01L31/1804 , H01L31/184 , H01L2924/0002 , H01S5/0207 , H01S5/0217 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10S117/915 , Y10S438/98
摘要： A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is optionally separated so that the substrate can be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.
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10.发明授权
公开(公告)号：US4420873A
公开(公告)日：1983-12-20
申请号：US115420
申请日：1980-01-25
CPC分类号： G02B6/122 , G02B6/131 , Y10S117/918
摘要： A method for fabricating three-dimensional optical waveguides is disclosed. In this method, a single crystal semiconductor layer is grown upon an insulator which has an index of refraction lower than the semiconductor. The semiconductor layer is deposited to a thickness which provides confinement of light propagating in the semiconductor layer in the vertical direction. An effective larger index of refraction over a cross-sectional region of the semiconductor layer is then formed to provide confinement of light in the lateral direction. In the preferred method, the growth of single crystal semiconductor upon the insulator is achieved by a vapor-phase lateral epitaxial overgrowth technique.Devices fabricated according to the method are also disclosed.
摘要翻译： 公开了制造三维光波导的方法。 在该方法中，单晶半导体层生长在折射率低于半导体的绝缘体上。 半导体层被沉积成在垂直方向上提供在半导体层中传播的光的限制的厚度。 然后在半导体层的横截面区域上形成有效的较大的折射率，以在侧向方向上提供光的约束。 在优选的方法中，单晶半导体在绝缘体上的生长通过气相横向外延生长技术实现。 还公开了根据该方法制造的器件。
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