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    PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER
    5.
    发明申请
    PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER 审中-公开
    在硅砂的正面形成网状电极的工艺

    公开(公告)号：US20100294360A1

    公开(公告)日：2010-11-25

    申请号：US12783768

    申请日：2010-05-20

    申请人： David Kent Anderson ,  Russell David Anderson ,  Giovanna Laudisio ,  Cheng-Nan Lin ,  Shih-Ming Kao ,  Chun-Kwei Wu

    发明人： David Kent Anderson ,  Russell David Anderson ,  Giovanna Laudisio ,  Cheng-Nan Lin ,  Shih-Ming Kao ,  Chun-Kwei Wu

    IPC分类号： H01L31/0392 ,  H01L21/283 ,  H01L29/40

    CPC分类号： H01B1/16 ,  H01B1/22 ,  H01L31/022425 ,  Y02E10/50

    摘要： A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps: (1) printing and drying a metal paste A comprising an inorganic content comprising 0.5 to 8 wt.-% of glass frit and having fire-through capability, wherein the metal paste A is printed on the ARC layer in a grid pattern which comprises (i) thin parallel finger lines forming a bottom set of finger lines and (ii) busbars intersecting the finger lines at right angle, (2) printing and drying a metal paste B comprising an inorganic content comprising 0 to 3 wt.-% of glass frit over the bottom set of finger lines to form a top set of finger lines superimposing the bottom set of finger lines, and (3) firing the double-printed silicon wafer, wherein the inorganic content of metal paste B contains less glass frit plus optionally present other inorganic additives than the inorganic content of metal paste A.

    摘要翻译： 一种在具有ARC层的硅晶片上形成前栅格电极的方法，包括以下步骤：（1）印刷和干燥包含0.5至8重量％玻璃料并具有火焰的无机物含量的金属糊剂A 通过能力，其中金属膏A以网格图案印刷在ARC层上，其包括（i）形成底部指纹线的薄的平行指线和（ii）与直线相交的母线的直角，（2 ）将包含0-3％（重量）玻璃料的无机物质的金属糊料B印刷并干燥在底部的一组指纹上，以形成叠加底部指状线组的顶部一组指纹线，以及（3） 烧制双面印刷的硅晶片，其中金属糊料B的无机含量比金属糊剂A的无机物含量少，玻璃料加上任选存在的其它无机添加剂。

    PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER
    6.
    发明申请
    PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER 有权
    在硅砂的正面形成网状电极的工艺

    公开(公告)号：US20100294359A1

    公开(公告)日：2010-11-25

    申请号：US12783761

    申请日：2010-05-20

    申请人： Russell David Anderson ,  Kenneth Warren Hang ,  Shih-Ming Kao ,  Giovanna Laudisio ,  Cheng-Nan Lin ,  Chun-Kwei Wu

    发明人： Russell David Anderson ,  Kenneth Warren Hang ,  Shih-Ming Kao ,  Giovanna Laudisio ,  Cheng-Nan Lin ,  Chun-Kwei Wu

    IPC分类号： H01L31/0392 ,  H01L21/283 ,  H01L29/40

    CPC分类号： H01L31/022433 ,  C03C8/02 ,  C03C8/10 ,  C03C8/24 ,  H01B1/16 ,  H01L31/022425 ,  Y02E10/50

    摘要： A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps: (1) printing and drying a metal paste A comprising an inorganic content comprising 0.5 to 8 wt.-% of glass frit and having fire-through capability, wherein the metal paste A is printed on the ARC layer to form a bottom set of thin parallel finger lines, (2) printing and drying a metal paste B comprising an inorganic content comprising 0.2 to 3 wt.-% of glass frit over the bottom set of finger lines, wherein the metal paste B is printed in a grid pattern which comprises (i) thin parallel finger lines forming a top set of finger lines superimposing the bottom set of finger lines and (ii) busbars intersecting the finger lines at right angle, and (3) firing the double-printed silicon wafer, wherein the inorganic content of metal paste B contains less glass frit plus optionally present other inorganic additives than the inorganic content of metal paste A.

    摘要翻译： 一种在具有ARC层的硅晶片上形成前栅格电极的方法，包括以下步骤：（1）印刷和干燥包含0.5至8重量％玻璃料并具有火焰的无机物含量的金属糊剂A 通过能力，其中金属糊剂A印刷在ARC层上以形成底部薄的平行指线，（2）印刷和干燥包含含有0.2至3重量％玻璃的无机物质的金属浆料B 玻璃料覆盖在底部指状线组上，其中金属糊料B以网格图案打印，该网格图案包括（i）薄的平行指线，形成叠加了底部指状线组的顶部一组指纹线，以及（ii）与 指状物为直角，（3）烧制双面印刷的硅晶片，其中金属糊料B的无机物含量比金属膏A的无机物含量少，玻璃料加上任选存在的其它无机添加剂。

    PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER
    7.
    发明申请
    PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER 失效
    在硅砂的正面形成网状电极的工艺

    公开(公告)号：US20100294361A1

    公开(公告)日：2010-11-25

    申请号：US12783832

    申请日：2010-05-20

    申请人： David Kent Anderson ,  Russell David Anderson ,  Kenneth Warren Hang ,  Shih-Ming Kao ,  Giovanna Laudisio ,  Cheng-Nan Lin ,  Chun-Kwei Wu

    发明人： David Kent Anderson ,  Russell David Anderson ,  Kenneth Warren Hang ,  Shih-Ming Kao ,  Giovanna Laudisio ,  Cheng-Nan Lin ,  Chun-Kwei Wu

    IPC分类号： H01L31/0232 ,  H01L31/18 ,  H01L31/0224

    CPC分类号： H01L31/022425 ,  C03C8/02 ,  C03C8/10 ,  C03C8/24 ,  Y02E10/50

    摘要： A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps:(1) printing and drying a metal paste A comprising an inorganic content comprising 0.5 to 8 wt.-% of glass frit and having fire-through capability, wherein the metal paste A is printed on the ARC layer to form a bottom set of thin parallel finger lines, (2) printing and drying a metal paste B comprising an inorganic content comprising 0 to 3 wt.-% of glass frit over the bottom set of finger lines forming a top set of finger lines superimposing the bottom set of finger lines, (3) printing and drying a metal paste C comprising an inorganic content comprising 0.2 to 3 wt.-% of glass frit to form busbars intersecting the finger lines at right angle, and (4) firing the triple-printed silicon wafer, wherein the inorganic content of metal paste B as well as that of paste C contains less glass frit plus optionally present other inorganic additives than the inorganic content of metal paste A.

    摘要翻译： 一种在具有ARC层的硅晶片上形成前栅格电极的方法，包括以下步骤：（1）印刷和干燥包含0.5至8重量％玻璃料并具有火焰的无机物含量的金属糊剂A 通过能力，其中金属膏A印刷在ARC层上以形成底部薄的平行指线，（2）印刷和干燥含有0至3重量％玻璃的无机物含量的金属浆料B （3）印刷和干燥包含0.2至3重量％玻璃料的无机物含量的金属浆料C以形成玻璃料，以形成最下面的一组指纹， 母线与指纹线成直角相交，（4）烧制三印刷硅片，其中金属糊料B的无机物含量以及糊状物C的无机物含量比无机物含量少，玻璃料加上任选存在的其它无机添加剂 的金属糊 一个。