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    Hydrogen ion-sensitive field effect transistor and manufacturing method thereof
    1.
    发明授权
    Hydrogen ion-sensitive field effect transistor and manufacturing method thereof 有权
    氢离子敏感场效应晶体管及其制造方法

    公开(公告)号：US08466521B2

    公开(公告)日：2013-06-18

    申请号：US12724435

    申请日：2010-03-16

    申请人： Chin-Long Wey ,  Chin-Fong Chiu ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Chen-Fu Lin

    发明人： Chin-Long Wey ,  Chin-Fong Chiu ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Chen-Fu Lin

    IPC分类号： H01L31/119

    CPC分类号： H01L29/78 ,  G01N27/414 ,  H01L29/4958

    摘要： A hydrogen ion-sensitive field effect transistor and a manufacturing method thereof are provided. The hydrogen ion-sensitive field effect transistor includes a semiconductor substrate, an insulating layer, a transistor gate, and a sensing film. A gate area is defined on the semiconductor substrate having a source area and a drain area. The insulating layer is formed within the gate area on the semiconductor substrate. The transistor gate is deposited within the gate area and includes a first gate layer. Further, the first gate layer is an aluminum layer, and a sensing window is defined thereon. The sensing film is an alumina film formed within the sensing window by oxidizing the first gate layer. Thus, the sensing film is formed without any film deposition process, and consequently the manufacturing method is simplified.

    摘要翻译： 提供氢离子敏感场效应晶体管及其制造方法。 氢离子敏感场效应晶体管包括半导体衬底，绝缘层，晶体管栅极和感测膜。 在具有源极区域和漏极区域的半导体衬底上限定栅极区域。 绝缘层形成在半导体衬底上的栅极区域内。 晶体管栅极沉积在栅极区内并且包括第一栅极层。 此外，第一栅极层是铝层，并且在其上限定感测窗口。 感测膜是通过氧化第一栅极层而在感测窗内形成的氧化铝膜。 因此，在没有任何膜沉积工艺的情况下形成感测膜，因此简化了制造方法。

    HYDROGEN ION-SENSITIVE FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF
    2.
    发明申请
    HYDROGEN ION-SENSITIVE FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF 有权
    氢离子敏感场效应晶体管及其制造方法

    公开(公告)号：US20110169056A1

    公开(公告)日：2011-07-14

    申请号：US12724435

    申请日：2010-03-16

    申请人： Chin-Long Wey ,  Chin-Fong Chiu ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Chen-Fu Lin

    发明人： Chin-Long Wey ,  Chin-Fong Chiu ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Chen-Fu Lin

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/78 ,  G01N27/414 ,  H01L29/4958

    摘要： A hydrogen ion-sensitive field effect transistor and a manufacturing method thereof are provided. The hydrogen ion-sensitive field effect transistor includes a semiconductor substrate, an insulating layer, a transistor gate, and a sensing film. A gate area is defined on the semiconductor substrate having a source area and a drain area. The insulating layer is formed within the gate area on the semiconductor substrate. The transistor gate is deposited within the gate area and includes a first gate layer. Further, the first gate layer is an aluminum layer, and a sensing window is defined thereon. The sensing film is an alumina film formed within the sensing window by oxidizing the first gate layer. Thus, the sensing film is formed without any film deposition process, and consequently the manufacturing method is simplified.

    摘要翻译： 提供氢离子敏感场效应晶体管及其制造方法。 氢离子敏感场效应晶体管包括半导体衬底，绝缘层，晶体管栅极和感测膜。 在具有源极区域和漏极区域的半导体衬底上限定栅极区域。 绝缘层形成在半导体衬底上的栅极区域内。 晶体管栅极沉积在栅极区内并且包括第一栅极层。 此外，第一栅极层是铝层，并且在其上限定感测窗口。 感测膜是通过氧化第一栅极层而在感测窗内形成的氧化铝膜。 因此，在没有任何膜沉积工艺的情况下形成感测膜，因此简化了制造方法。

    CMOS-MEMS cantilever structure
    3.
    发明授权
    CMOS-MEMS cantilever structure 有权
    CMOS-MEMS悬臂结构

    公开(公告)号：US08410480B2

    公开(公告)日：2013-04-02

    申请号：US12708546

    申请日：2010-02-19

    申请人： Chin-Fong Chiu ,  Ying Zong Juang ,  Hann Huei Tsai ,  Sheng-Hsiang Tseng ,  Chen-Fu Lin

    发明人： Chin-Fong Chiu ,  Ying Zong Juang ,  Hann Huei Tsai ,  Sheng-Hsiang Tseng ,  Chen-Fu Lin

    IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/20 ,  H01L31/0376

    CPC分类号： B81C1/00246 ,  B81B2203/0118 ,  B81B2207/015 ,  B81C2203/0714 ,  B81C2203/0735 ,  G01F1/28 ,  H01L27/0617

    摘要： The present invention discloses a CMOS-MEMS cantilever structure. The CMOS-MEMS cantilever structure includes a substrate, a circuit structure, and a cantilever beam. The substrate has a circuit area and a sensor unit area defined thereon. The circuit structure is formed in the circuit area. The cantilever beam is disposed in the sensor unit area with one end floating above the substrate and the other end connecting to the circuit structure. With the above arrangement, the manufacturing process of CMOS-MEMS cantilever structure of this invention can be simplified. Furthermore, the structure of the cantilever beam is thinned down and therefore has a higher sensitivity.

    摘要翻译： 本发明公开了一种CMOS-MEMS悬臂结构。 CMOS-MEMS悬臂结构包括基板，电路结构和悬臂梁。 基板具有限定在其上的电路区域和传感器单元区域。 电路结构形成在电路区域中。 悬臂梁设置在传感器单元区域中，其一端浮在基板上方，另一端连接到电路结构。 通过上述结构，可以简化本发明的CMOS-MEMS悬臂结构的制造工艺。 此外，悬臂梁的结构变薄，因此具有较高的灵敏度。

    Biosensor package structure with micro-fluidic channel
    4.
    发明授权
    Biosensor package structure with micro-fluidic channel 有权
    具有微流体通道的生物传感器封装结构

    公开(公告)号：US08158063B2

    公开(公告)日：2012-04-17

    申请号：US12333990

    申请日：2008-12-12

    申请人： Chin-Fong Chiu ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Chen-Fu Lin

    发明人： Chin-Fong Chiu ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Chen-Fu Lin

    IPC分类号： G01N15/06 ,  G01N33/00

    CPC分类号： B01L3/502707 ,  B01L2200/0689 ,  B01L2300/0636 ,  B01L2300/0816 ,  B01L2400/0439

    摘要： A biosensor package structure with a micro-fluidic channel is provided. The biosensor package structure includes a substrate, a biochip, and a cover. The substrate has a first surface, a second surface, and an opening. The biochip is attached on the first surface. A bio-sensing area of the biochip is exposed to the opening of the substrate. The cover is attached on the second surface to cover the opening so as to form a micro-fluidic channel. By implementing the invention, the manufacturing process of the biosensor is simplified and the productivity is increased.

    摘要翻译： 提供具有微流体通道的生物传感器封装结构。 生物传感器封装结构包括基板，生物芯片和盖。 基板具有第一表面，第二表面和开口。 生物芯片附着在第一表面上。 生物芯片的生物感测区域暴露于基底的开口。 盖子安装在第二表面上以覆盖开口以便形成微流体通道。 通过实施本发明，简化了生物传感器的制造过程，提高了生产率。

    CMOS-MEMS Cantilever Structure
    5.
    发明申请
    CMOS-MEMS Cantilever Structure 有权
    CMOS-MEMS悬臂结构

    公开(公告)号：US20110133256A1

    公开(公告)日：2011-06-09

    申请号：US12708546

    申请日：2010-02-19

    申请人： Chin-Fong Chiu ,  Ying Zong Juang ,  Hann Huei Tsai ,  Sheng-Hsiang Tseng ,  Chen-Fu Lin

    发明人： Chin-Fong Chiu ,  Ying Zong Juang ,  Hann Huei Tsai ,  Sheng-Hsiang Tseng ,  Chen-Fu Lin

    IPC分类号： H01L29/84

    CPC分类号： B81C1/00246 ,  B81B2203/0118 ,  B81B2207/015 ,  B81C2203/0714 ,  B81C2203/0735 ,  G01F1/28 ,  H01L27/0617

    摘要： The present invention discloses a CMOS-MEMS cantilever structure. The CMOS-MEMS cantilever structure includes a substrate, a circuit structure, and a cantilever beam. The substrate has a circuit area and a sensor unit area defined thereon. The circuit structure is formed in the circuit area. The cantilever beam is disposed in the sensor unit area with one end floating above the substrate and the other end connecting to the circuit structure. With the above arrangement, the manufacturing process of CMOS-MEMS cantilever structure of this invention can be simplified. Furthermore, the structure of the cantilever beam is thinned down and therefore has a higher sensitivity.

    摘要翻译： 本发明公开了一种CMOS-MEMS悬臂结构。 CMOS-MEMS悬臂结构包括基板，电路结构和悬臂梁。 基板具有限定在其上的电路区域和传感器单元区域。 电路结构形成在电路区域中。 悬臂梁设置在传感器单元区域中，其一端浮在基板上方，另一端连接到电路结构。 通过上述结构，可以简化本发明的CMOS-MEMS悬臂结构的制造工艺。 此外，悬臂梁的结构变薄，因此具有较高的灵敏度。

    CMOS-MEMS switch structure
    8.
    发明授权
    CMOS-MEMS switch structure 有权
    CMOS-MEMS开关结构

    公开(公告)号：US08451078B2

    公开(公告)日：2013-05-28

    申请号：US13160742

    申请日：2011-06-15

    申请人： You-Liang Lai ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Sheng-Hsiang Tseng ,  Chin-Fong Chiu

    发明人： You-Liang Lai ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Sheng-Hsiang Tseng ,  Chin-Fong Chiu

    IPC分类号： H01H51/22 ,  H01H57/00

    CPC分类号： H01H1/0036 ,  H01H1/20 ,  H01H2001/0052 ,  H01H2001/0057 ,  H01H2001/0078 ,  H01H2061/006 ,  H01L27/0617

    摘要： A CMOS-MEMS switch structure is disclosed. The CMOS-MEMS switch structure includes a first substrate, a second substrate, a first cantilever beam, and a second cantilever beam. The first and second substrates are positioned opposite each other. The first cantilever beam is provided on the first substrate, extends from the first substrate toward the second substrate, and bends downward. Likewise, the second cantilever beam is provided on the second substrate, extends from the second substrate toward the first substrate, and bends downward. The first and second substrates are movable toward each other to connect a first top surface of the first cantilever beam and a second top surface of the second cantilever beam, and away from each other so that the first top surface of the first cantilever beam and the second top surface of the second cantilever beam are disconnected, thereby closing or opening the CMOS-MEMS switch structure.

    摘要翻译： 公开了一种CMOS-MEMS开关结构。 CMOS-MEMS开关结构包括第一基板，第二基板，第一悬臂梁和第二悬臂梁。 第一和第二基板彼此相对定位。 第一悬臂梁设置在第一基板上，从第一基板朝向第二基板延伸，并向下弯曲。 类似地，第二悬臂梁设置在第二基板上，从第二基板朝向第一基板延伸并向下弯曲。 第一和第二基板可彼此移动以将第一悬臂梁的第一顶表面和第二悬臂梁的第二顶表面彼此远离，以使第一悬臂梁的第一顶表面和 第二悬臂梁的第二顶表面被断开，从而关闭或打开CMOS-MEMS开关结构。

    METHOD OF FABRICATING SINGLE CHIP FOR INTEGRATING FIELD-EFFECT TRANSISTOR INTO MEMS STRUCTURE
    9.
    发明申请
    METHOD OF FABRICATING SINGLE CHIP FOR INTEGRATING FIELD-EFFECT TRANSISTOR INTO MEMS STRUCTURE 审中-公开
    将场效应晶体管整合到MEMS结构中的制造单芯片的方法

    公开(公告)号：US20110117747A1

    公开(公告)日：2011-05-19

    申请号：US12652068

    申请日：2010-01-05

    申请人： Chin-Long Wey ,  Chin-Fong Chiu ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Sheng-Hsiang Tseng ,  Hsin-Hao Liao

    发明人： Chin-Long Wey ,  Chin-Fong Chiu ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Sheng-Hsiang Tseng ,  Hsin-Hao Liao

    IPC分类号： H01L21/3065

    CPC分类号： B81C1/00246 ,  B81B2207/015 ,  B81C2201/014 ,  B81C2203/0714 ,  B81C2203/0742 ,  H01L23/522 ,  H01L27/0617 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of fabricating a single chip for integrating a field-effect transistor into a microelectromechanical systems (MEMS) structure is provided. The method includes the steps of: providing a substrate having thereon at least one transistor structure, a MEMS structure and a blocking structure, wherein the blocking structure encircles the MEMS structure to separate the MEMS structure from the transistor structure; forming a masking layer for covering the transistor structure, the MEMS structure and the blocking structure; forming a patterned photoresist layer on the masking layer; performing a first etching process by using the patterned photoresist layer to remove the masking layer on the MEMS structure; and performing a second etching process by removing a portion of the MEMS structure to form a plurality of microstructures such that a relative motion among the microstructures takes place in a direction perpendicular to the substrate.

    摘要翻译： 提供了一种制造用于将场效应晶体管集成到微机电系统（MEMS）结构中的单个芯片的方法。 该方法包括以下步骤：提供其上具有至少一个晶体管结构的基板，MEMS结构和阻挡结构，其中所述阻挡结构环绕所述MEMS结构以将所述MEMS结构与所述晶体管结构分离; 形成用于覆盖晶体管结构，MEMS结构和阻挡结构的掩模层; 在掩模层上形成图案化的光致抗蚀剂层; 通过使用图案化的光致抗蚀剂层去除MEMS结构上的掩模层来执行第一蚀刻工艺; 以及通过去除所述MEMS结构的一部分以形成多个微观结构来执行第二蚀刻工艺，使得所述微结构之间的相对运动在垂直于所述衬底的方向上发生。