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公开(公告)号:US20130249081A1
公开(公告)日:2013-09-26
申请号:US13426857
申请日:2012-03-22
申请人: Cheng-Hung Shih , Yung-Wei Hsieh , Shu-Chen Lin , Cheng-Fan Lin , Hua-An Dai
发明人: Cheng-Hung Shih , Yung-Wei Hsieh , Shu-Chen Lin , Cheng-Fan Lin , Hua-An Dai
IPC分类号: H01L23/485 , H01L21/768
CPC分类号: H01L23/58 , H01L23/49811 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/034 , H01L2224/03912 , H01L2224/0401 , H01L2224/05022 , H01L2224/05099 , H01L2224/05572 , H01L2224/05666 , H01L2224/1147 , H01L2224/11472 , H01L2224/11906 , H01L2224/13082 , H01L2224/13147 , H01L2224/13562 , H01L2224/13564 , H01L2224/13582 , H01L2224/13583 , H01L2224/13644 , H01L2224/13655 , H01L2224/13664 , H01L2924/00013 , H01L2924/00014 , H01L2224/13099 , H01L2224/05599 , H01L2224/05552
摘要: A method for manufacturing fine-pitch bumps comprises providing a silicon substrate; forming a titanium-containing metal layer having a plurality of first zones and a plurality of second zones on the silicon substrate; forming a photoresist layer on the titanium-containing metal layer; patterning the photoresist layer; forming a plurality of copper bumps having a plurality of first top surfaces and a plurality of first ring surfaces; heating the photoresist layer to form a plurality of body portions and removable portions; etching the photoresist layer; forming a plurality of bump protection layers on the titanium-containing metal layer, the first top surface and the first ring surface, each of the bump protection layers comprises a bump coverage portion; plating a plurality of gold layers at the bump coverage portion; eventually, removing the second zones to enable each of the first zones to form an under bump metallurgy layer.
摘要翻译: 制造细间距凸块的方法包括提供硅衬底; 在硅衬底上形成具有多个第一区和多个第二区的含钛金属层; 在含钛金属层上形成光致抗蚀剂层; 图案化光致抗蚀剂层; 形成具有多个第一顶表面和多个第一环表面的多个铜凸块; 加热光致抗蚀剂层以形成多个主体部分和可移除部分; 蚀刻光致抗蚀剂层; 在所述含钛金属层,所述第一顶表面和所述第一环表面上形成多个凸块保护层,所述凸块保护层中的每一个包括凸起覆盖部分; 在凸点覆盖部分处镀覆多个金层; 最终,移除第二区域以使得每个第一区域形成凸起下的冶金层。
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公开(公告)号:US08530344B1
公开(公告)日:2013-09-10
申请号:US13426857
申请日:2012-03-22
申请人: Cheng-Hung Shih , Yung-Wei Hsieh , Shu-Chen Lin , Cheng-Fan Lin , Hua-An Dai
发明人: Cheng-Hung Shih , Yung-Wei Hsieh , Shu-Chen Lin , Cheng-Fan Lin , Hua-An Dai
IPC分类号: H01L21/44
CPC分类号: H01L23/58 , H01L23/49811 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/034 , H01L2224/03912 , H01L2224/0401 , H01L2224/05022 , H01L2224/05099 , H01L2224/05572 , H01L2224/05666 , H01L2224/1147 , H01L2224/11472 , H01L2224/11906 , H01L2224/13082 , H01L2224/13147 , H01L2224/13562 , H01L2224/13564 , H01L2224/13582 , H01L2224/13583 , H01L2224/13644 , H01L2224/13655 , H01L2224/13664 , H01L2924/00013 , H01L2924/00014 , H01L2224/13099 , H01L2224/05599 , H01L2224/05552
摘要: A method for manufacturing fine-pitch bumps comprises providing a silicon substrate; forming a titanium-containing metal layer having a plurality of first zones and a plurality of second zones on the silicon substrate; forming a photoresist layer on the titanium-containing metal layer; patterning the photoresist layer; forming a plurality of copper bumps having a plurality of first top surfaces and a plurality of first ring surfaces; heating the photoresist layer to form a plurality of body portions and removable portions; etching the photoresist layer; forming a plurality of bump protection layers on the titanium-containing metal layer, the first top surface and the first ring surface, each of the bump protection layers comprises a bump coverage portion; plating a plurality of gold layers at the bump coverage portion; eventually, removing the second zones to enable each of the first zones to form an under bump metallurgy layer.
摘要翻译: 制造细间距凸块的方法包括提供硅衬底; 在硅衬底上形成具有多个第一区和多个第二区的含钛金属层; 在含钛金属层上形成光致抗蚀剂层; 图案化光致抗蚀剂层; 形成具有多个第一顶表面和多个第一环表面的多个铜凸块; 加热光致抗蚀剂层以形成多个主体部分和可移除部分; 蚀刻光致抗蚀剂层; 在所述含钛金属层,所述第一顶表面和所述第一环表面上形成多个凸块保护层,所述凸块保护层中的每一个包括凸起覆盖部分; 在凸点覆盖部分处镀覆多个金层; 最终,移除第二区域以使得每个第一区域形成凸起下的冶金层。
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公开(公告)号:US08501614B1
公开(公告)日:2013-08-06
申请号:US13426810
申请日:2012-03-22
申请人: Cheng-Hung Shih , Yung-Wei Hsieh , Shu-Chen Lin , Cheng-Fan Lin , Hua-An Dai
发明人: Cheng-Hung Shih , Yung-Wei Hsieh , Shu-Chen Lin , Cheng-Fan Lin , Hua-An Dai
IPC分类号: H01L21/44
CPC分类号: H01L23/49811 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/034 , H01L2224/03912 , H01L2224/0401 , H01L2224/05022 , H01L2224/05571 , H01L2224/05666 , H01L2224/11472 , H01L2224/11906 , H01L2224/13007 , H01L2224/13147 , H01L2224/13562 , H01L2224/13582 , H01L2224/13644 , H01L2224/13655 , H01L2224/13664 , H01L2924/00014 , H01L2924/01074 , H01L2924/01079 , H01L2924/01029 , H01L2224/05552
摘要: A method for manufacturing fine-pitch bumps comprises the steps of providing a silicon substrate; forming a titanium-containing metal layer on the silicon substrate, wherein the titanium-containing metal layer comprises a plurality of first zones and a plurality of second zones; forming a photoresist layer on the titanium-containing metal layer; patterning the photoresist layer to form a plurality of opening slots; forming a plurality of copper bumps at the opening slots, wherein each of the copper bumps comprises a first top surface and a ring surface; heating the photoresist layer to form a plurality of body portions and a plurality of removable portions; etching the photoresist layer; and removing the second zones to enable each of the first zones to form an under bump metallurgy layer having a bearing portion and an extending portion.
摘要翻译: 制造细间距凸块的方法包括以下步骤:提供硅衬底; 在所述硅衬底上形成含钛金属层,其中所述含钛金属层包括多个第一区和多个第二区; 在含钛金属层上形成光致抗蚀剂层; 图案化光致抗蚀剂层以形成多个开口槽; 在开口槽处形成多个铜凸块,其中每个铜凸块包括第一顶表面和环表面; 加热光致抗蚀剂层以形成多个主体部分和多个可移除部分; 蚀刻光致抗蚀剂层; 以及移除所述第二区域以使得所述第一区域中的每一个能够形成具有轴承部分和延伸部分的凸起下金属层。
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公开(公告)号:US20130183823A1
公开(公告)日:2013-07-18
申请号:US13352537
申请日:2012-01-18
申请人: Chih-Ming Kuo , Hua-An Dai , Cheng-Fan Lin , Yie-Chuan Chiu , Yung-Wei Hsieh
发明人: Chih-Ming Kuo , Hua-An Dai , Cheng-Fan Lin , Yie-Chuan Chiu , Yung-Wei Hsieh
IPC分类号: H01L21/60
CPC分类号: H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/034 , H01L2224/03912 , H01L2224/0401 , H01L2224/05022 , H01L2224/05027 , H01L2224/05082 , H01L2224/05166 , H01L2224/05184 , H01L2224/05572 , H01L2224/05644 , H01L2224/05647 , H01L2224/11472 , H01L2224/11906 , H01L2224/13147 , H01L2224/13562 , H01L2224/13564 , H01L2224/13582 , H01L2224/13644 , H01L2224/13655 , H01L2224/13664 , H01L2924/00014 , H01L2224/05666 , H01L2224/05552
摘要: A bumping process includes providing a silicon substrate, forming a titanium-containing metal layer on the silicon substrate, wherein the titanium-containing metal layer comprises a plurality of first areas and a plurality of second areas, forming a photoresist layer on the titanium-containing metal layer, patterning the photoresist layer to form a plurality of opening slots corresponded to the first areas of the titanium-containing metal layer, forming a plurality of copper bumps at the opening slots, proceeding a heat procedure, forming a plurality of bump isolation layers on the copper bumps, forming a plurality of connective layers on the bump isolation layers, removing the photoresist layer, removing the second areas and enabling each the first areas to form an under bump metallurgy layer.
摘要翻译: 凸起工艺包括提供硅衬底,在硅衬底上形成含钛金属层,其中含钛金属层包括多个第一区域和多个第二区域,在含钛金属层上形成光致抗蚀剂层 金属层,图案化光致抗蚀剂层以形成对应于含钛金属层的第一区域的多个开口槽,在开口槽处形成多个铜凸块,进行热程序,形成多个凸块隔离层 在铜凸块上,在凸块隔离层上形成多个连接层,去除光致抗蚀剂层,去除第二区域,并且使得每个第一区域能够形成凸起下的冶金层。
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