公开(公告)号：US08581239B2

公开(公告)日：2013-11-12

申请号：US13353380

申请日：2012-01-19

申请人： Cheng-Hung Shih ,  Shu-Chen Lin ,  Yung-Wei Hsieh ,  Jun-Yu Yeh

发明人： Cheng-Hung Shih ,  Shu-Chen Lin ,  Yung-Wei Hsieh ,  Jun-Yu Yeh

IPC分类号： H01L35/24

CPC分类号： H01L24/11 ,  H01L21/4853 ,  H01L23/3171 ,  H01L23/49811 ,  H01L23/49894 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/10126 ,  H01L2224/10156 ,  H01L2224/1147 ,  H01L2224/1182 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1369 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor structure comprises a carrier, a plurality of under bump metallurgy layers, a plurality of copper containing bumps and an organic barrier layer, wherein the carrier comprises a protective layer and a plurality of conductive pads, mentioned protective layer comprises a plurality of openings, the conductive pads exposed by the openings, mentioned under bump metallurgy layers being formed on the conductive pads, mentioned copper containing bumps being formed on the under bump metallurgy layers, each of the copper containing bumps comprises a top surface and a ring surface in connection with the top surface, mentioned organic barrier layer having a first coverage portion, and mentioned first coverage portion covers the top surface and the ring surface of each of the copper containing bumps.

摘要翻译： 半导体结构包括载体，多个凸块下金属层，多个含铜凸起和有机阻挡层，其中所述载体包括保护层和多个导电焊盘，所述保护层包括多个开口， 通过开口暴露的导电焊盘，所述凹凸不平的冶金层形成在导电焊盘上，所述含铜凸起形成在凸块下的冶金层上，每个含铜凸块包括顶表面和与 具有第一覆盖部分的上表面的有机阻挡层和所述第一覆盖部分覆盖每个含铜凸块的顶表面和环表面。

公开(公告)号：US20130249081A1

公开(公告)日：2013-09-26

申请号：US13426857

申请日：2012-03-22

申请人： Cheng-Hung Shih ,  Yung-Wei Hsieh ,  Shu-Chen Lin ,  Cheng-Fan Lin ,  Hua-An Dai

发明人： Cheng-Hung Shih ,  Yung-Wei Hsieh ,  Shu-Chen Lin ,  Cheng-Fan Lin ,  Hua-An Dai

IPC分类号： H01L23/485 ,  H01L21/768

CPC分类号： H01L23/58 ,  H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/034 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05099 ,  H01L2224/05572 ,  H01L2224/05666 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/11906 ,  H01L2224/13082 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13564 ,  H01L2224/13582 ,  H01L2224/13583 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/05599 ,  H01L2224/05552

摘要： A method for manufacturing fine-pitch bumps comprises providing a silicon substrate; forming a titanium-containing metal layer having a plurality of first zones and a plurality of second zones on the silicon substrate; forming a photoresist layer on the titanium-containing metal layer; patterning the photoresist layer; forming a plurality of copper bumps having a plurality of first top surfaces and a plurality of first ring surfaces; heating the photoresist layer to form a plurality of body portions and removable portions; etching the photoresist layer; forming a plurality of bump protection layers on the titanium-containing metal layer, the first top surface and the first ring surface, each of the bump protection layers comprises a bump coverage portion; plating a plurality of gold layers at the bump coverage portion; eventually, removing the second zones to enable each of the first zones to form an under bump metallurgy layer.

摘要翻译： 制造细间距凸块的方法包括提供硅衬底; 在硅衬底上形成具有多个第一区和多个第二区的含钛金属层; 在含钛金属层上形成光致抗蚀剂层; 图案化光致抗蚀剂层; 形成具有多个第一顶表面和多个第一环表面的多个铜凸块; 加热光致抗蚀剂层以形成多个主体部分和可移除部分; 蚀刻光致抗蚀剂层; 在所述含钛金属层，所述第一顶表面和所述第一环表面上形成多个凸块保护层，所述凸块保护层中的每一个包括凸起覆盖部分; 在凸点覆盖部分处镀覆多个金层; 最终，移除第二区域以使得每个第一区域形成凸起下的冶金层。

公开(公告)号：US08530344B1

公开(公告)日：2013-09-10

申请号：US13426857

申请日：2012-03-22

申请人： Cheng-Hung Shih ,  Yung-Wei Hsieh ,  Shu-Chen Lin ,  Cheng-Fan Lin ,  Hua-An Dai

发明人： Cheng-Hung Shih ,  Yung-Wei Hsieh ,  Shu-Chen Lin ,  Cheng-Fan Lin ,  Hua-An Dai

IPC分类号： H01L21/44

CPC分类号： H01L23/58 ,  H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/034 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05099 ,  H01L2224/05572 ,  H01L2224/05666 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/11906 ,  H01L2224/13082 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13564 ,  H01L2224/13582 ,  H01L2224/13583 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/05599 ,  H01L2224/05552

摘要： A method for manufacturing fine-pitch bumps comprises providing a silicon substrate; forming a titanium-containing metal layer having a plurality of first zones and a plurality of second zones on the silicon substrate; forming a photoresist layer on the titanium-containing metal layer; patterning the photoresist layer; forming a plurality of copper bumps having a plurality of first top surfaces and a plurality of first ring surfaces; heating the photoresist layer to form a plurality of body portions and removable portions; etching the photoresist layer; forming a plurality of bump protection layers on the titanium-containing metal layer, the first top surface and the first ring surface, each of the bump protection layers comprises a bump coverage portion; plating a plurality of gold layers at the bump coverage portion; eventually, removing the second zones to enable each of the first zones to form an under bump metallurgy layer.

摘要翻译： 制造细间距凸块的方法包括提供硅衬底; 在硅衬底上形成具有多个第一区和多个第二区的含钛金属层; 在含钛金属层上形成光致抗蚀剂层; 图案化光致抗蚀剂层; 形成具有多个第一顶表面和多个第一环表面的多个铜凸块; 加热光致抗蚀剂层以形成多个主体部分和可移除部分; 蚀刻光致抗蚀剂层; 在所述含钛金属层，所述第一顶表面和所述第一环表面上形成多个凸块保护层，所述凸块保护层中的每一个包括凸起覆盖部分; 在凸点覆盖部分处镀覆多个金层; 最终，移除第二区域以使得每个第一区域形成凸起下的冶金层。

公开(公告)号：US08501614B1

公开(公告)日：2013-08-06

申请号：US13426810

申请日：2012-03-22

申请人： Cheng-Hung Shih ,  Yung-Wei Hsieh ,  Shu-Chen Lin ,  Cheng-Fan Lin ,  Hua-An Dai

发明人： Cheng-Hung Shih ,  Yung-Wei Hsieh ,  Shu-Chen Lin ,  Cheng-Fan Lin ,  Hua-An Dai

IPC分类号： H01L21/44

CPC分类号： H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/034 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05571 ,  H01L2224/05666 ,  H01L2224/11472 ,  H01L2224/11906 ,  H01L2224/13007 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01029 ,  H01L2224/05552

摘要： A method for manufacturing fine-pitch bumps comprises the steps of providing a silicon substrate; forming a titanium-containing metal layer on the silicon substrate, wherein the titanium-containing metal layer comprises a plurality of first zones and a plurality of second zones; forming a photoresist layer on the titanium-containing metal layer; patterning the photoresist layer to form a plurality of opening slots; forming a plurality of copper bumps at the opening slots, wherein each of the copper bumps comprises a first top surface and a ring surface; heating the photoresist layer to form a plurality of body portions and a plurality of removable portions; etching the photoresist layer; and removing the second zones to enable each of the first zones to form an under bump metallurgy layer having a bearing portion and an extending portion.

摘要翻译： 制造细间距凸块的方法包括以下步骤：提供硅衬底; 在所述硅衬底上形成含钛金属层，其中所述含钛金属层包括多个第一区和多个第二区; 在含钛金属层上形成光致抗蚀剂层; 图案化光致抗蚀剂层以形成多个开口槽; 在开口槽处形成多个铜凸块，其中每个铜凸块包括第一顶表面和环表面; 加热光致抗蚀剂层以形成多个主体部分和多个可移除部分; 蚀刻光致抗蚀剂层; 以及移除所述第二区域以使得所述第一区域中的每一个能够形成具有轴承部分和延伸部分的凸起下金属层。

公开(公告)号：US20130183823A1

公开(公告)日：2013-07-18

申请号：US13352537

申请日：2012-01-18

申请人： Chih-Ming Kuo ,  Hua-An Dai ,  Cheng-Fan Lin ,  Yie-Chuan Chiu ,  Yung-Wei Hsieh

发明人： Chih-Ming Kuo ,  Hua-An Dai ,  Cheng-Fan Lin ,  Yie-Chuan Chiu ,  Yung-Wei Hsieh

IPC分类号： H01L21/60

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/034 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/11472 ,  H01L2224/11906 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13564 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2924/00014 ,  H01L2224/05666 ,  H01L2224/05552

摘要： A bumping process includes providing a silicon substrate, forming a titanium-containing metal layer on the silicon substrate, wherein the titanium-containing metal layer comprises a plurality of first areas and a plurality of second areas, forming a photoresist layer on the titanium-containing metal layer, patterning the photoresist layer to form a plurality of opening slots corresponded to the first areas of the titanium-containing metal layer, forming a plurality of copper bumps at the opening slots, proceeding a heat procedure, forming a plurality of bump isolation layers on the copper bumps, forming a plurality of connective layers on the bump isolation layers, removing the photoresist layer, removing the second areas and enabling each the first areas to form an under bump metallurgy layer.

摘要翻译： 凸起工艺包括提供硅衬底，在硅衬底上形成含钛金属层，其中含钛金属层包括多个第一区域和多个第二区域，在含钛金属层上形成光致抗蚀剂层 金属层，图案化光致抗蚀剂层以形成对应于含钛金属层的第一区域的多个开口槽，在开口槽处形成多个铜凸块，进行热程序，形成多个凸块隔离层 在铜凸块上，在凸块隔离层上形成多个连接层，去除光致抗蚀剂层，去除第二区域，并且使得每个第一区域能够形成凸起下的冶金层。

公开(公告)号：US20130187265A1

公开(公告)日：2013-07-25

申请号：US13353380

申请日：2012-01-19

申请人： Cheng-Hung Shih ,  Shu-Chen Lin ,  Yung-Wei Hsieh ,  Jun-Yu Yeh

发明人： Cheng-Hung Shih ,  Shu-Chen Lin ,  Yung-Wei Hsieh ,  Jun-Yu Yeh

IPC分类号： H01L23/485

CPC分类号： H01L24/11 ,  H01L21/4853 ,  H01L23/3171 ,  H01L23/49811 ,  H01L23/49894 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/10126 ,  H01L2224/10156 ,  H01L2224/1147 ,  H01L2224/1182 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1369 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor structure comprises a carrier, a plurality of under bump metallurgy layers, a plurality of copper containing bumps and an organic barrier layer, wherein the carrier comprises a protective layer and a plurality of conductive pads, mentioned protective layer comprises a plurality of openings, the conductive pads exposed by the openings, mentioned under bump metallurgy layers being formed on the conductive pads, mentioned copper containing bumps being formed on the under bump metallurgy layers, each of the copper containing bumps comprises a top surface and a ring surface in connection with the top surface, mentioned organic barrier layer having a first coverage portion, and mentioned first coverage portion covers the top surface and the ring surface of each of the copper containing bumps.

摘要翻译： 半导体结构包括载体，多个凸块下金属层，多个含铜凸起和有机阻挡层，其中所述载体包括保护层和多个导电焊盘，所述保护层包括多个开口， 通过开口暴露的导电焊盘，所述凹凸不平的冶金层形成在导电焊盘上，所述含铜凸起形成在凸块下的冶金层上，每个含铜凸块包括顶表面和与 具有第一覆盖部分的上表面的有机阻挡层和所述第一覆盖部分覆盖每个含铜凸块的顶表面和环表面。

公开(公告)号：US20130214419A1

公开(公告)日：2013-08-22

申请号：US13398059

申请日：2012-02-16

申请人： Cheng-Hung Shih ,  Shu-Chen Lin ,  Cheng-Fan Lin ,  Yung-Wei Hsieh ,  Ming-Yi Liu

发明人： Cheng-Hung Shih ,  Shu-Chen Lin ,  Cheng-Fan Lin ,  Yung-Wei Hsieh ,  Ming-Yi Liu

IPC分类号： H01L23/48 ,  H01L21/56 ,  H01L21/60

CPC分类号： H01L24/13 ,  H01L21/563 ,  H01L23/293 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/83104 ,  H01L2224/8392 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/00014 ,  H01L2924/01079

摘要： A semiconductor packaging method includes providing a substrate having a plurality of connection pads; mounting a chip on the substrate, wherein the chip comprises a plurality of copper-containing bumps directly coupled to the connection pads, and each of the copper-containing bumps comprises a ring surface; forming an anti-dissociation gel between the substrate and the chip, wherein the anti-dissociation gel comprises a plurality of anti-dissociation substances, and the ring surfaces of the copper-containing bumps are covered by the anti-dissociation substances.

摘要翻译： 半导体封装方法包括提供具有多个连接焊盘的衬底; 将芯片安装在所述基板上，其中所述芯片包括直接耦合到所述连接焊盘的多个含铜凸块，并且所述含铜凸块包括环表面; 在所述基板和所述芯片之间形成抗分解凝胶，其中所述抗分解凝胶包含多个抗分解物质，并且所述含铜凸起的环表面被所述抗分解物质覆盖。

公开(公告)号：US08497579B1

公开(公告)日：2013-07-30

申请号：US13398081

申请日：2012-02-16

申请人： Cheng-Hung Shih ,  Shu-Chen Lin ,  Cheng-Fan Lin ,  Yung-Wei Hsieh ,  Bo-Shiun Jiang

发明人： Cheng-Hung Shih ,  Shu-Chen Lin ,  Cheng-Fan Lin ,  Yung-Wei Hsieh ,  Bo-Shiun Jiang

IPC分类号： H01L23/48

CPC分类号： H01L21/50 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29393 ,  H01L2224/29499 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81903 ,  H01L2224/83192 ,  H01L2224/83851 ,  H01L2224/9211 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00

摘要： A semiconductor packaging method includes providing a substrate having a plurality of pads, each of the pads comprises a first coupling surface having a plurality of first conductive contact areas and a plurality of first non-conductive contact areas; forming a conductible gel with anti-dissociation function on the substrate, said conductible gel includes a plurality of conductive particles and a plurality of anti-dissociation substances; mounting a chip on the substrate, said chip comprises a plurality of copper-containing bumps, each of the copper-containing bumps comprises a ring surface and a second coupling surface having a plurality of second conductive contact areas and a plurality of second non-conductive contact areas, wherein the conductive particles are electrically connected with the first conductive contact areas and the second conductive contact areas, said anti-dissociation substances are in contact with the second non-conductive contact area, and the ring surfaces are covered with the anti-dissociation substances.

摘要翻译： 半导体封装方法包括提供具有多个焊盘的衬底，每个焊盘包括具有多个第一导电接触区域和多个第一非导电接触区域的第一耦合表面; 在基板上形成具有抗解离功能的导电凝胶，所述可导电凝胶包括多个导电颗粒和多个抗分解物质; 将芯片安装在基板上，所述芯片包括多个含铜凸块，每个含铜凸块包括环表面和具有多个第二导电接触区域和多个第二非导电性接触区域的第二耦合表面 接触区域，其中所述导电颗粒与所述第一导电接触区域和所述第二导电接触区域电连接，所述抗分解物质与所述第二非导电接触区域接触，并且所述环形表面被所述反 - 解离物质

公开(公告)号：US20130214407A1

公开(公告)日：2013-08-22

申请号：US13398081

申请日：2012-02-16

申请人： Cheng-Hung Shih ,  Shu-Chen Lin ,  Cheng-Fan Lin ,  Yung-Wei Hsieh ,  Bo-Shiun Jiang

发明人： Cheng-Hung Shih ,  Shu-Chen Lin ,  Cheng-Fan Lin ,  Yung-Wei Hsieh ,  Bo-Shiun Jiang

IPC分类号： H01L23/488 ,  H01L21/60

CPC分类号： H01L21/50 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29393 ,  H01L2224/29499 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81903 ,  H01L2224/83192 ,  H01L2224/83851 ,  H01L2224/9211 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00

摘要： A semiconductor packaging method includes providing a substrate having a plurality of pads, each of the pads comprises a first coupling surface having a plurality of first conductive contact areas and a plurality of first non-conductive contact areas; forming a conductible gel with anti-dissociation function on the substrate, said conductible gel includes a plurality of conductive particles and a plurality of anti-dissociation substances; mounting a chip on the substrate, said chip comprises a plurality of copper-containing bumps, each of the copper-containing bumps comprises a ring surface and a second coupling surface having a plurality of second conductive contact areas and a plurality of second non-conductive contact areas, wherein the conductive particles are electrically connected with the first conductive contact areas and the second conductive contact areas, said anti-dissociation substances are in contact with the second non-conductive contact area, and the ring surfaces are covered with the anti-dissociation substances.