摘要:
A method for creating segmented resist islands for photolithography on single sliders is disclosed. The method includes ramping the temperature of a number of single sliders, to a temperature that is below a proper softbake temperature. The single sliders reside in a divider and the single sliders and walls of the divider have a layer of resist deposited on them. Coarse lithography is then performed to remove the resist from above portions of the walls of the divider; and the temperature of the single sliders, the resist and the divider is then ramped to a proper softbake temperature.
摘要:
A method for manufacturing thin-film magnetic head sliders is disclosed. Initially, an elastic layer, which may be made of poly-dimethyl siloxane (PDMS), is spun on a wafer and is thermally cured. Then, a resist layer is spun on the elastic layer. Both the resist layer and the elastic layer are subsequently peeled off together from the wafer. Next, the peeled resist layer/elastic layer is applied onto a group of magnetic heads with the resist layer in direct contact with the magnetic heads. Finally, the elastic layer is peeled off from the resist layer such that the resist layer remains attaching to the magnetic heads.
摘要:
A method for creating segmented resist islands for photolithography on single sliders is disclosed. The method includes ramping the temperature of a number of single sliders, to a temperature that is below a proper softbake temperature. The single sliders reside in a divider and the single sliders and walls of the divider have a layer of resist deposited on them. Coarse lithography is then performed to remove the resist from above portions of the walls of the divider; and the temperature of the single sliders, the resist and the divider is then ramped to a proper softbake temperature.
摘要:
A method according to one embodiment includes placing a substrate in a chamber; and plasma sputtering the substrate in a presence of a non-zero pressure of a vapor, wherein the vapor at the non-zero pressure is effective to diminish an etch rate of a first material of the substrate. A plasma sputtering apparatus according to one embodiment includes a chamber; a reservoir in the chamber for releasing a vapor at an established rate; a mount for a substrate; and a plasma source.
摘要:
A method according to one embodiment includes placing a substrate in a chamber; and plasma sputtering the substrate in a presence of a non-zero pressure of a vapor, wherein the vapor at the non-zero pressure is effective to diminish an etch rate of a first material of the substrate. A plasma sputtering apparatus according to one embodiment includes a chamber; a reservoir in the chamber for releasing a vapor at an established rate; a mount for a substrate; and a plasma source.
摘要:
A structure according to one embodiment includes a substrate having a media facing side; and a thin film stack formed on the substrate, the thin film stack including magnetic films and insulating films, wherein the thin film stack is recessed from a plane extending along the media facing side of the substrate, wherein the magnetic films are recessed more than the insulating films, wherein the magnetic films each have a substantially flat media facing surface, wherein the insulating films each have a substantially flat media facing surface.
摘要:
A method for forming a planarized surface for at least one bar of sliders for utilization in a hard disk drive is disclosed. In general, at least one bar of sliders is placed on an adhesive layer. A single thermoplastic layer is then provided above the at least one bar of sliders. The single thermoplastic layer is then heated to a softening temperature such that the single thermoplastic layer will flow between the at least one bar of sliders. The single thermoplastic layer is then cooled to form a planarized surface of both said single thermoplastic layer and said at least one bar of sliders at said adhesive layer.
摘要:
A method for protecting a thin film structure including fabricating a plurality of island structures in a recording gap of a magnetic recording head, exposing a substantial portion of the plurality of island structures by removing at least a portion of the surrounding recording gap material via at least one etching process, including ion milling, coating the magnetic recording head containing the plurality of island structures with a coating material, including silicon nitride or aluminum oxide, and removing at least a portion of the coating material via a removal process, including chemical-mechanical polishing or lapping, to expose an uppermost region of at least a portion of said plurality of island structures.
摘要:
A magnetic head produced at low ambient temperatures that comprise a crystalline alumina layer for increasing the durability of the head is provided. According to one embodiment, a magnetic head for at least one of reading and writing data on to a magnetic data storage media. The magnetic head comprises a substrate, an at least partially crystalline alumina layer formed on the substrate, at least one of a write transducer and a read transducer formed on the substrate, and a surface for engaging the magnetic data storage media. In another embodiment, a method for forming an at least partially crystalline alumina film. The method comprises providing a substrate, and depositing alumina onto the substrate at an ambient temperature to form the at least partially crystalline alumina film.
摘要:
A method and structure for a microelectronic device comprises a first film over a substrate, a first polish resistant layer over the first film, a second film over the first polish resistant layer, a second polish resistant layer over the second film, wherein the first and second polish resistant layers comprise diamond-like carbon. The first film comprises an electrically resistive material, while the second film comprises low resistance conductive material. The first film is an electrical resistor embodied as a magnetic read sensor. The electrically resistive material is sensitive to magnetic fields. The device further comprises a generally vertical junction between the first and second films and a dielectric film abutted to the electrically resistive material.