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    OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF
    3.
    发明申请
    OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF 有权
    光电器件及其制造方法

    公开(公告)号：US20110193119A1

    公开(公告)日：2011-08-11

    申请号：US13021307

    申请日：2011-02-04

    申请人： Shih-I CHEN ,  Chia-Liang HSU ,  Tzu-Chieh HSU ,  Chun-Yi WU ,  Chien-Fu HUANG

    发明人： Shih-I CHEN ,  Chia-Liang HSU ,  Tzu-Chieh HSU ,  Chun-Yi WU ,  Chien-Fu HUANG

    IPC分类号： H01L33/58 ,  H01L33/60

    CPC分类号： H01L33/46 ,  H01L33/22 ,  H01L33/42 ,  H01L33/44

    摘要： One aspect of the present disclosure provides an optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.One aspect of the present disclosure provides a method for manufacturing an optoelectronic device in accordance with the present disclosure. The method comprises the steps of providing a substrate; forming a semiconductor system on the substrate; forming a window layer on the semiconductor system, wherein the window layer comprises a semiconductor material different from the semiconductor system; selectively removing the window layer thereby forming a width difference between the window layer and the semiconductor system, and the width difference is greater than 1 micron.

    摘要翻译： 本公开的一个方面提供了一种包括衬底的光电器件; 在所述基板上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度; 具有第二薄层电阻，第二厚度和第二杂质浓度的第二窗口层; 以及在所述第一窗口层和所述第二窗口层之间的半导体系统; 其中所述第二窗口层包括不同于所述半导体系统的半导体材料，并且所述第二薄层电阻大于所述第一薄层电阻。 本公开的一个方面提供了根据本公开的用于制造光电子器件的方法。 该方法包括提供基板的步骤; 在所述基板上形成半导体系统; 在所述半导体系统上形成窗口层，其中所述窗口层包括不同于所述半导体系统的半导体材料; 选择性地去除窗口层，从而形成窗口层和半导体系统之间的宽度差，并且宽度差异大于1微米。

    OPTOELECTRONIC DEVICE
    4.
    发明申请
    OPTOELECTRONIC DEVICE 有权
    光电器件

    公开(公告)号：US20100276719A1

    公开(公告)日：2010-11-04

    申请号：US12835066

    申请日：2010-07-13

    申请人： Jin-Ywan LIN ,  Jen-Chau WU ,  Chih-Chiang LU ,  Wei-Chih PENG ,  Ching-Pu TAI ,  Shih-I CHEN

    发明人： Jin-Ywan LIN ,  Jen-Chau WU ,  Chih-Chiang LU ,  Wei-Chih PENG ,  Ching-Pu TAI ,  Shih-I CHEN

    IPC分类号： H01L33/46

    CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/382

    摘要： An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly.

    摘要翻译： 公开了诸如发光二极管芯片的光电子器件。 它包括衬底，多层外延结构，第一金属电极层，第二金属电极层，第一焊盘和第二接合焊盘。 透明基板上的多层外延结构包括第一导电类型，有源层和第二导电类型的半导体层的半导体层。 第一接合焊盘和第二接合焊盘在同一水平面上。 此外，第一金属电极层可以被图案化，使得电流均匀地扩散到发光二极管芯片。

    SEMICONDUCTOR DEVICE STRUCTURES AND THE SEPARATING METHODS THEREOF
    5.
    发明申请
    SEMICONDUCTOR DEVICE STRUCTURES AND THE SEPARATING METHODS THEREOF 有权
    半导体器件结构及其分离方法

    公开(公告)号：US20120313249A1

    公开(公告)日：2012-12-13

    申请号：US13490992

    申请日：2012-06-07

    申请人： Shih-I CHEN ,  Ching-Pei Lin ,  Tzu-Chieh Hsu ,  Chia-Liang Hsu

    发明人： Shih-I CHEN ,  Ching-Pei Lin ,  Tzu-Chieh Hsu ,  Chia-Liang Hsu

    IPC分类号： H01L21/78 ,  H01L23/48

    CPC分类号： H01L33/0095 ,  H01L21/78 ,  H01L2224/16225 ,  H01L2924/181 ,  H01L2924/00012

    摘要： A method of separating semiconductor device structures comprises steps of providing a substrate having a first surface and a second surface opposite to the first surface; forming a plurality of semiconductor epitaxial stacks on the first surface; forming a patterned resist layer covering the semiconductor epitaxial stacks and exposing part of the first surface, or covering the second surface corresponding to the semiconductor epitaxial stacks; performing a physical etching process to directly server the substrate apart from an area of the first surface or the second surface not covered by the patterned resist layer; and separating the semiconductor epitaxial stacks to form a plurality of semiconductor device structures.

    摘要翻译： 分离半导体器件结构的方法包括提供具有第一表面和与第一表面相对的第二表面的衬底的步骤; 在所述第一表面上形成多个半导体外延堆叠; 形成覆盖所述半导体外延叠层并暴露所述第一表面的一部分或覆盖对应于所述半导体外延叠层的所述第二表面的图案化抗蚀剂层; 进行物理蚀刻处理以直接地将所述基板服务于所述第一表面或未被所述图案化抗蚀剂层覆盖的第二表面的区域; 以及分离半导体外延叠层以形成多个半导体器件结构。