-
公开(公告)号:US20110193119A1
公开(公告)日:2011-08-11
申请号:US13021307
申请日:2011-02-04
申请人: Shih-I CHEN , Chia-Liang HSU , Tzu-Chieh HSU , Chun-Yi WU , Chien-Fu HUANG
发明人: Shih-I CHEN , Chia-Liang HSU , Tzu-Chieh HSU , Chun-Yi WU , Chien-Fu HUANG
摘要: One aspect of the present disclosure provides an optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.One aspect of the present disclosure provides a method for manufacturing an optoelectronic device in accordance with the present disclosure. The method comprises the steps of providing a substrate; forming a semiconductor system on the substrate; forming a window layer on the semiconductor system, wherein the window layer comprises a semiconductor material different from the semiconductor system; selectively removing the window layer thereby forming a width difference between the window layer and the semiconductor system, and the width difference is greater than 1 micron.
摘要翻译: 本公开的一个方面提供了一种包括衬底的光电器件; 在所述基板上的第一窗口层,具有第一薄层电阻,第一厚度和第一杂质浓度; 具有第二薄层电阻,第二厚度和第二杂质浓度的第二窗口层; 以及在所述第一窗口层和所述第二窗口层之间的半导体系统; 其中所述第二窗口层包括不同于所述半导体系统的半导体材料,并且所述第二薄层电阻大于所述第一薄层电阻。 本公开的一个方面提供了根据本公开的用于制造光电子器件的方法。 该方法包括提供基板的步骤; 在所述基板上形成半导体系统; 在所述半导体系统上形成窗口层,其中所述窗口层包括不同于所述半导体系统的半导体材料; 选择性地去除窗口层,从而形成窗口层和半导体系统之间的宽度差,并且宽度差异大于1微米。
-
公开(公告)号:US20130001624A1
公开(公告)日:2013-01-03
申请号:US13608750
申请日:2012-09-10
申请人: Chien-Fu HUANG , Min-Hsun HSIEH , Chih-Chiang LU , Chia-Liang HSU , Shih-I CHEN
发明人: Chien-Fu HUANG , Min-Hsun HSIEH , Chih-Chiang LU , Chia-Liang HSU , Shih-I CHEN
CPC分类号: H01L33/24 , H01L24/05 , H01L33/0079 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/387 , H01L33/62 , H01L2224/05552 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要: A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and having a first width, and a first length greater than the first width, and a second branch extending from the first branch and having a second width larger than the first width, and a second length greater than the second width; and an electrical contact structure between the second branch and the semiconductor light-emitting stack.
摘要翻译: 发光装置包括半导体发光叠层; 形成在半导体发光叠层上的电流注入部分; 具有从所述电流注入部分发射并具有第一宽度和大于所述第一宽度的第一长度的第一分支的延伸部分和从所述第一分支延伸并具有大于所述第一宽度的第二宽度的第二分支,以及 大于第二宽度的第二长度; 以及第二分支和半导体发光叠层之间的电接触结构。
-
公开(公告)号:US20100283081A1
公开(公告)日:2010-11-11
申请号:US12437908
申请日:2009-05-08
申请人: Chien-Fu HUANG , Min-Hsun HSIEH , Chih-Chiang LU , Chia-Liang HSU , Shih-I CHEN
发明人: Chien-Fu HUANG , Min-Hsun HSIEH , Chih-Chiang LU , Chia-Liang HSU , Shih-I CHEN
IPC分类号: H01L33/00
CPC分类号: H01L33/24 , H01L24/05 , H01L33/0079 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/387 , H01L33/62 , H01L2224/05552 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要: A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack.
摘要翻译: 一种发光器件,包括半导体发光堆叠,包括发光区域; 形成在所述半导体发光叠层上的电极,其中所述电极包括电流注入部分和延伸部分; 形成在电流注入部分和半导体发光叠层之间并形成在延伸部分的第一部分和半导体发光叠层之间的电流阻挡结构; 以及形成在所述延伸部分的第二部分和所述半导体发光叠层之间的电接触结构。
-
公开(公告)号:US20110108879A1
公开(公告)日:2011-05-12
申请号:US13009491
申请日:2011-01-19
申请人: Chien-Fu HUANG , Min-Hsun Hsieh , Chih-Chiang Lu , Chia-Liang Hsu , Shih-I Chen
发明人: Chien-Fu HUANG , Min-Hsun Hsieh , Chih-Chiang Lu , Chia-Liang Hsu , Shih-I Chen
IPC分类号: H01L33/22
CPC分类号: H01L33/24 , H01L24/05 , H01L33/0079 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/387 , H01L33/62 , H01L2224/05552 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要: A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack.
摘要翻译: 一种发光器件,包括半导体发光堆叠,包括发光区域; 形成在所述半导体发光叠层上的电极,其中所述电极包括电流注入部分和延伸部分; 形成在电流注入部分和半导体发光叠层之间并形成在延伸部分的第一部分和半导体发光叠层之间的电流阻挡结构; 以及形成在所述延伸部分的第二部分和所述半导体发光叠层之间的电接触结构。
-
公开(公告)号:US20110266581A1
公开(公告)日:2011-11-03
申请号:US13181222
申请日:2011-07-12
申请人: Chia-Liang HSU , Min-Hsun HSIEH , Chih-Chiang LU , Chien-Fu HUANG
发明人: Chia-Liang HSU , Min-Hsun HSIEH , Chih-Chiang LU , Chien-Fu HUANG
IPC分类号: H01L33/60
CPC分类号: H01L33/0079 , H01L33/405 , H01L33/46
摘要: The application is related to a method of forming a substrate of a light-emitting diode by composite electroplating. The application illustrates a light-emitting diode comprising the following elements: a light-emitting epitaxy structure, a reflective layer disposed on the light-emitting epitaxy structure, a seed layer disposed on the reflective layer, a composite electroplating substrate disposed on the seed layer by composite electroplating, and a protection layer disposed on the composite electroplating substrate.
摘要翻译: 该应用涉及通过复合电镀形成发光二极管的基板的方法。 本发明示出了包括以下元件的发光二极管:发光外延结构,设置在发光外延结构上的反射层,设置在反射层上的种子层,设置在种子层上的复合电镀基板 通过复合电镀,以及设置在复合电镀基板上的保护层。
-
6.
公开(公告)号:US20100025714A1
公开(公告)日:2010-02-04
申请号:US12533211
申请日:2009-07-31
申请人: Chia-Liang HSU , Min-Hsun HSIEH , Chih-Chiang LU , Chien-Fu HUANG
发明人: Chia-Liang HSU , Min-Hsun HSIEH , Chih-Chiang LU , Chien-Fu HUANG
IPC分类号: H01L33/00
CPC分类号: H01L33/0079 , H01L33/405 , H01L33/46
摘要: The application is related to a method of forming a substrate of a light-emitting diode by composite electroplating. The application illustrates a light-emitting diode comprising the following elements: a light-emitting epitaxy structure, a reflective layer disposed on the light-emitting epitaxy structure, a seed layer disposed on the reflective layer, a composite electroplating substrate disposed on the seed layer by composite electroplating, and a protection layer disposed on the composite electroplating substrate.
摘要翻译: 该应用涉及通过复合电镀形成发光二极管的基板的方法。 本发明示出了包括以下元件的发光二极管:发光外延结构,设置在发光外延结构上的反射层,设置在反射层上的种子层,设置在种子层上的复合电镀基板 通过复合电镀,以及设置在复合电镀基板上的保护层。
-
公开(公告)号:US20100120184A1
公开(公告)日:2010-05-13
申请号:US12617413
申请日:2009-11-12
申请人: Chien-Fu HUANG , Chia-Liang Hsu
发明人: Chien-Fu HUANG , Chia-Liang Hsu
IPC分类号: H01L21/30
CPC分类号: H01L33/60 , H01L33/0079 , H01L33/0095 , H01L33/38 , H01L33/62 , H01L33/64 , H01L33/641 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2933/0016 , H01L2933/0033 , H01L2933/0058 , H01L2933/0066 , H01L2933/0075 , H01L2924/00014 , H01L2924/00
摘要: The application is related to an optoelectronic device structure including a stress-balancing layer. The optoelectronic device structure comprises a high thermal conductive substrate, a stress-balancing layer on the high thermal conductive substrate, a reflective layer on the stress-balancing layer and an epitaxial structure on the reflective layer.
摘要翻译: 该应用涉及包括应力平衡层的光电子器件结构。 光电子器件结构包括高导热衬底,高导热衬底上的应力平衡层,应力平衡层上的反射层和反射层上的外延结构。
-
-
-
-
-
-