OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF
    1.
    发明申请
    OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF 有权
    光电器件及其制造方法

    公开(公告)号:US20110193119A1

    公开(公告)日:2011-08-11

    申请号:US13021307

    申请日:2011-02-04

    IPC分类号: H01L33/58 H01L33/60

    摘要: One aspect of the present disclosure provides an optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.One aspect of the present disclosure provides a method for manufacturing an optoelectronic device in accordance with the present disclosure. The method comprises the steps of providing a substrate; forming a semiconductor system on the substrate; forming a window layer on the semiconductor system, wherein the window layer comprises a semiconductor material different from the semiconductor system; selectively removing the window layer thereby forming a width difference between the window layer and the semiconductor system, and the width difference is greater than 1 micron.

    摘要翻译: 本公开的一个方面提供了一种包括衬底的光电器件; 在所述基板上的第一窗口层,具有第一薄层电阻,第一厚度和第一杂质浓度; 具有第二薄层电阻,第二厚度和第二杂质浓度的第二窗口层; 以及在所述第一窗口层和所述第二窗口层之间的半导体系统; 其中所述第二窗口层包括不同于所述半导体系统的半导体材料,并且所述第二薄层电阻大于所述第一薄层电阻。 本公开的一个方面提供了根据本公开的用于制造光电子器件的方法。 该方法包括提供基板的步骤; 在所述基板上形成半导体系统; 在所述半导体系统上形成窗口层,其中所述窗口层包括不同于所述半导体系统的半导体材料; 选择性地去除窗口层,从而形成窗口层和半导体系统之间的宽度差,并且宽度差异大于1微米。

    LIGHT-EMITTING DEVICE CONTAINING A COMPOSITE ELECTROPLATED SUBSTRATE
    5.
    发明申请
    LIGHT-EMITTING DEVICE CONTAINING A COMPOSITE ELECTROPLATED SUBSTRATE 有权
    包含复合电极基板的发光装置

    公开(公告)号:US20110266581A1

    公开(公告)日:2011-11-03

    申请号:US13181222

    申请日:2011-07-12

    IPC分类号: H01L33/60

    摘要: The application is related to a method of forming a substrate of a light-emitting diode by composite electroplating. The application illustrates a light-emitting diode comprising the following elements: a light-emitting epitaxy structure, a reflective layer disposed on the light-emitting epitaxy structure, a seed layer disposed on the reflective layer, a composite electroplating substrate disposed on the seed layer by composite electroplating, and a protection layer disposed on the composite electroplating substrate.

    摘要翻译: 该应用涉及通过复合电镀形成发光二极管的基板的方法。 本发明示出了包括以下元件的发光二极管:发光外延结构,设置在发光外延结构上的反射层,设置在反射层上的种子层,设置在种子层上的复合电镀基板 通过复合电镀,以及设置在复合电镀基板上的保护层。

    LIGHT-EMITTING DEVICE CONTAINING A COMPOSITE ELECTROPLATED SUBSTRATE
    6.
    发明申请
    LIGHT-EMITTING DEVICE CONTAINING A COMPOSITE ELECTROPLATED SUBSTRATE 审中-公开
    包含复合电极基板的发光装置

    公开(公告)号:US20100025714A1

    公开(公告)日:2010-02-04

    申请号:US12533211

    申请日:2009-07-31

    IPC分类号: H01L33/00

    摘要: The application is related to a method of forming a substrate of a light-emitting diode by composite electroplating. The application illustrates a light-emitting diode comprising the following elements: a light-emitting epitaxy structure, a reflective layer disposed on the light-emitting epitaxy structure, a seed layer disposed on the reflective layer, a composite electroplating substrate disposed on the seed layer by composite electroplating, and a protection layer disposed on the composite electroplating substrate.

    摘要翻译: 该应用涉及通过复合电镀形成发光二极管的基板的方法。 本发明示出了包括以下元件的发光二极管:发光外延结构,设置在发光外延结构上的反射层,设置在反射层上的种子层,设置在种子层上的复合电镀基板 通过复合电镀,以及设置在复合电镀基板上的保护层。