摘要:
A touch module including an image sensing unit, a plurality of first reflecting elements, a plurality of second reflecting elements, and a processing unit is provided. The image sensing unit is positioned in correspondence with a first corner of a sensing area and capable of capturing a sensing image to output an image signal. The first reflecting elements and the second reflecting elements respectively have different first angles and different second angles, are disposed along a first and the second edges of the sensing area respectively, and are capable of reflecting a touch object to form a first and a second image in the sensing image. A second corner formed by the first the second edges is diagonal to the first corner. The processing unit is coupled the image sensing unit and receives the image signal to determine the position of the touch object relative to the sensing area.
摘要:
A touch module including an image sensing unit, a plurality of first reflecting elements, a plurality of second reflecting elements, and a processing unit is provided. The image sensing unit is positioned in correspondence with a first corner of a sensing area and capable of capturing a sensing image to output an image signal. The first reflecting elements and the second reflecting elements respectively have different first angles and different second angles, are disposed along a first and the second edges of the sensing area respectively, and are capable of reflecting a touch object to form a first and a second image in the sensing image. A second corner formed by the first the second edges is diagonal to the first corner. The processing unit is coupled the image sensing unit and receives the image signal to determine the position of the touch object relative to the sensing area.
摘要:
A liquid crystal display (LCD) with improved motion image quality. The LCD displays a frame during a frame time. A pixel of the LCD has a first switch and a second switch. At a first time point, the first switch is turned on by a video scan line, and a video data signal is transmitted to the pixel through a video data line, which make the pixel have first luminance intensity. At a second time point, the second switch is turned on by a particular color signal scan line, and a particular color data signal is transmitted to the pixel through a particular color signal data line, which make the pixel have second luminance intensity smaller than the first luminance intensity. A time interval between the second time point and the first time point is smaller than the frame time and the image dragging phenomenon is avoided.
摘要:
A capacitive acceleration sensor includes a non-single-crystal-silicon-based substrate, a polysilicon beam structure having a movable section that includes a movable electrode, a polysilicon supporter positioned on the non-single-crystal-silicon-based substrate for fixing the beam structure and forming a distance between the beam structure and the non-single-crystal-silicon-based substrate, a stationary electrode positioned on the non-single-crystal-silicon-based substrate and opposite to the movable section of the beam structure, and a thin film transistor (TFT) control circuit positioned on the non-single-crystal-silicon-based substrate. The stationary electrode and the movable electrode constitute a plate capacitor, and the TFT control circuit is electrically connected to the plate capacitor.
摘要:
A method of fabricating a thin-film transistor on an insulation substrate. A first conductive layer, a gate dielectric layer, a silicon layer and a doped silicon layer are formed on the insulation substrate. These four layers are patterned to form a gate and a gate line. A second conductive layer is formed over the insulation substrate. The second conductive layer and the doped silicon layer are patterned to form a source/drain region, a source/drain conductive layer and a source/drain line on both sides of the gate line. A protection layer is formed over the insulation layer, followed by a patterning step to form openings on the source/drain conductive layer and the source/drain line. A transparent conductive layer is formed on the protection layer and in the openings. After being patterned, a pixel electrode is formed, and a portion of the transparent conductive layer remains to electrically connect the source/drain line and the source/drain conductive layer. The method of fabricating the thin-film transistor can be applied to fabrication of fax machine, CIS such as scanner and various electronic devices. It can also be applied to fabrication of normal thin-film transistor flat panel display such as liquid crystal display (LCD) and organic light emitting diode (OLED).
摘要:
A thin film solar cell including a substrate, a first conductive layer, a photoelectric conversion layer, a second conductive layer and a passivation layer is provided. The first conductive layer disposed on the substrate has a plurality of first openings, so as to divide the first conductive layer into bottom electrodes of a plurality of photovoltaic elements. The photoelectric conversion layer disposed on the first conductive layer has a plurality of second openings. The second conductive layer is disposed on the photoelectric conversion layer and electrically connected to the first conductive layer through the second openings. The passivation layer is disposed on the sidewall of the photoelectric conversion layer, so that the second conductive layer in the second openings is electrically isolated from the photoelectric conversion layer. A manufacturing method of the thin film solar cell is also provided.
摘要:
A thin film solar cell includes a substrate, a plurality of photovoltaic cells and at least one control unit. The photovoltaic cells generate a photocurrent respectively. Each photovoltaic cell includes a first conductive layer disposed on the substrate, a photovoltaic layer and a second conductive layer. The photovoltaic layer disposed on the first conductive layer has an opening exposing the first conductive layer. The second conductive layer disposed on the photovoltaic layer is connected electrically to the first conductive layer of the adjacent photovoltaic cell through the opening. The control unit is connected to at least one of the photovoltaic cell electrically. When the photocurrent generated by at least one of the photovoltaic cells is different from the photocurrent generated by other photovoltaic cells, the control unit provided a compensable current to the first photovoltaic cell to make the photocurrents provided by the overall photovoltaic cells being matched.
摘要:
A fabricating method of a pixel structure is disclosed. The pixel structure is disposed on a substrate. The pixel structure comprises a scan line, a data line, an active element, a capacitor electrode, a pixel electrode and an electric field shielding layer. The fabricating method of the pixel structure comprises forming the scan line, the data line and the active element on the substrate first. The scan line and the data line are electrically coupled to the active element. Then, the capacitor electrode and the electric field shielding layer are formed on the substrate. Finally, the pixel electrode is formed on the substrate, covering the capacitor electrode and electrically coupled to the active element. The pixel electrode and the capacitor electrode form a pixel storage capacitor. The electric field shielding layer can avoid the interference between the data line and the pixel electrode.
摘要:
A fingerprint sensor for sensing a fingerprint has a detecting and processing circuit and a plurality of sensing units. Each of the sensing units has a switch element, a first resistor, and a second resistor. The switch element has a first terminal, a second terminal, and a third terminal. Resistance of the second resistor is fixed. The fingerprint influences an intensity of light illuminating the first resistor so that resistance of the first resistor and a voltage level of the second terminal change. When the switch elements are turned on, the detecting and processing circuit analyzes the fingerprint according to the voltage levels of the second terminals of the plurality switch elements.
摘要:
A complementary metal oxide semiconductor (CMOS) image sensor includes at least a non-single-crystal-silicone-base substrate, an opaque layer, a polysilicon layer, a source, a drain, a gate dielectric layer, a first transparent gate electrode, and a second gate transparent gate electrode. The opaque layer is formed on the non-single-crystal-silicone-base substrate, and the polysilicon layer, formed on the opaque layer, has a charge-generating region. The source and the drain are formed in the polysilicon layer, and a pre-channel region is formed between the source and the drain. The source is located between the pre-channel region and the charge-generating region. The gate dielectric layer is formed on the polysilicon layer, and the first and the second transparent gate electrodes, formed on the gate dielectric layer, are respectively located above the charge-generating region and the pre-channel region.