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    High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck
    1.
    发明授权
    High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck 有权
    高AC电流高RF功率AC-RF去耦滤波器用于等离子体反应器加热静电卡盘

    公开(公告)号：US07777152B2

    公开(公告)日：2010-08-17

    申请号：US11671927

    申请日：2007-02-06

    申请人： Valentin N. Todorov ,  Michael D. Willwerth ,  Alexander Paterson ,  Brian K. Hatcher ,  James E. Sammons, III ,  John P. Holland

    发明人： Valentin N. Todorov ,  Michael D. Willwerth ,  Alexander Paterson ,  Brian K. Hatcher ,  James E. Sammons, III ,  John P. Holland

    IPC分类号： B23K9/02 ,  H01P5/08 ,  C23C16/00

    CPC分类号： H05H1/46 ,  H01J37/32706 ,  H03H1/0007

    摘要： An RF blocking filter isolates a two-phase AC power supply from at least 2 kV p-p of power of an HF frequency that is reactively coupled to a resistive heating element, while conducting several kW of 60 Hz AC power from the two-phase AC power supply to the resistive heating element without overheating, the two-phase AC power supply having a pair of terminals and the resistive heating element having a pair of terminals. The filter includes a pair of cylindrical non-conductive envelopes each having an interior diameter between about one and two inches and respective pluralities of fused iron powder toroids of magnetic permeability on the order of about 10 stacked coaxially within respective ones of the pair of cylindrical envelopes, the exterior diameter of the toroids being about the same as the interior diameter of each of the envelopes. A pair of wire conductors of diameter between 3 mm and 3.5 mm are helically wound around corresponding ones of the pair of envelopes to form respective inductor windings in the range of about 16 to 24 turns for each the envelope, each of the conductors having an input end and an output end. The input end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the two-phase AC power supply, and the output end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the resistive heating element.

    摘要翻译： RF阻断滤波器将两相交流电源从反应耦合到电阻加热元件的HF频率的至少2kV pp的功率隔离，同时从两相交流电源进行几kW的60Hz AC电力 供给电阻加热元件而不会过热，两相交流电源具有一对端子和电阻加热元件具有一对端子。 该过滤器包括一对圆柱形非导电封套，每一个内径均在约一英寸至两英寸之间，并且相应的多个约10层的磁导率的熔融铁粉末环形环共轴同心地位于一对圆柱形封套中 环形线圈的外径与每个信封的内径大致相同。 直径在3毫米与3.5毫米之间的一对电线导体螺旋缠绕在一对信封的相应的一对信封上，以形成每个封套约16至24匝范围的相应的电感绕组，每个导体具有一个输入 结束和输出结束。 每个导体的输入端耦合到两相交流电源的一对端子中的对应的一个，并且每一个导体的输出端耦合到该对端子中相应的一个端子 的电阻加热元件。

    HIGH AC CURRENT HIGH RF POWER AC-RF DECOUPLING FILTER FOR PLASMA REACTOR HEATED ELECTROSTATIC CHUCK
    2.
    发明申请
    HIGH AC CURRENT HIGH RF POWER AC-RF DECOUPLING FILTER FOR PLASMA REACTOR HEATED ELECTROSTATIC CHUCK 有权
    用于等离子体反应器加热静电切割机的高交流电流高频功率AC-RF解码滤波器

    公开(公告)号：US20070284344A1

    公开(公告)日：2007-12-13

    申请号：US11671927

    申请日：2007-02-06

    申请人： Valentin N. Todorov ,  Michael D. Willwerth ,  Alexander Paterson ,  Brian K. Hatcher ,  James E. Sammons ,  John P. Holland

    发明人： Valentin N. Todorov ,  Michael D. Willwerth ,  Alexander Paterson ,  Brian K. Hatcher ,  James E. Sammons ,  John P. Holland

    IPC分类号： B23K9/00

    CPC分类号： H05H1/46 ,  H01J37/32706 ,  H03H1/0007

    摘要： An RF blocking filter isolates a two-phase AC power supply from at least 2 kV p-p of power of an HF frequency that is reactively coupled to a resistive heating element, while conducting several kW of 60 Hz AC power from the two-phase AC power supply to the resistive heating element without overheating, the two-phase AC power supply having a pair of terminals and the resistive heating element having a pair of terminals. The filter includes a pair of cylindrical non-conductive envelopes each having an interior diameter between about one and two inches and respective pluralities of fused iron powder toroids of magnetic permeability on the order of about 10 stacked coaxially within respective ones of the pair of cylindrical envelopes, the exterior diameter of the toroids being about the same as the interior diameter of each of the envelopes. A pair of wire conductors of diameter between 3 mm and 3.5 mm are helically wound around corresponding ones of the pair of envelopes to form respective inductor windings in the range of about 16 to 24 turns for each the envelope, each of the conductors having an input end and an output end. The input end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the two-phase AC power supply, and the output end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the resistive heating element.

    摘要翻译： RF阻断滤波器将两相交流电源从反应耦合到电阻加热元件的HF频率的至少2kV pp的功率隔离，同时从两相交流电源进行几kW的60Hz AC电力 供给电阻加热元件而不会过热，两相交流电源具有一对端子和电阻加热元件具有一对端子。 该过滤器包括一对圆柱形非导电封套，每一个内径均在约一英寸至两英寸之间，并且相应的多个约10层的磁导率的熔融铁粉末环形环共轴同心地位于一对圆柱形封套中 环形线圈的外径与每个信封的内径大致相同。 直径在3毫米与3.5毫米之间的一对电线导体螺旋缠绕在一对信封的相应的一对信封上，以形成每个封套约16至24匝范围内的相应的电感绕组，每个导体具有一个输入 结束和输出结束。 每个导体的输入端耦合到两相交流电源的一对端子中的对应的一个，并且每一个导体的输出端耦合到该对端子中相应的一个端子 的电阻加热元件。

    Tandem etch chamber plasma processing system
    5.
    发明授权
    Tandem etch chamber plasma processing system 有权
    串联腐蚀室等离子体处理系统

    公开(公告)号：US06962644B2

    公开(公告)日：2005-11-08

    申请号：US10241653

    申请日：2002-09-10

    申请人： Alexander Paterson ,  Valentin N. Todorov ,  Jon McChesney ,  Gerhard M. Schneider ,  David Palagashvili ,  John P. Holland ,  Michael S. Barnes

    发明人： Alexander Paterson ,  Valentin N. Todorov ,  Jon McChesney ,  Gerhard M. Schneider ,  David Palagashvili ,  John P. Holland ,  Michael S. Barnes

    IPC分类号： H01L21/00 ,  C23F1/00 ,  C23C16/00 ,  H01L21/306

    CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J37/32458

    摘要： A method and apparatus for processing wafers including a chamber defining a plurality of isolated processing regions. The isolated processing regions have an upper end and a lower end. The chamber further includes a plurality of plasma generation devices each disposed adjacent the upper end of each isolated processing region, and one of a plurality of power supplies connected to each plasma generation device. The output frequency of the plurality of power supplies are phase and/or frequency locked together. Additionally, the chamber includes a plurality of gas distribution assemblies. Each gas distribution assembly is disposed within each isolated processing region. A movable wafer support is disposed within each isolated processing region to support a wafer for plasma processing thereon. The movable wafer support includes a bias electrode coupled to a bias power supply configured to control the bombardment of plasma ions toward the movable wafer support.

    摘要翻译： 一种用于处理晶片的方法和装置，包括限定多个隔离处理区域的腔室。 隔离处理区域具有上端和下端。 所述室还包括多个等离子体产生装置，每个等离子体产生装置邻近每个隔离处理区域的上端设置，并且连接到每个等离子体产生装置的多个电源中的一个。 多个电源的输出频率是相位和/或频率锁定在一起的。 另外，腔室包括多个气体分配组件。 每个气体分配组件设置在每个隔离的处理区域内。 可移动的晶片支撑件设置在每个隔离的处理区域内以支撑用于等离子体处理的晶片。 可移动晶片支撑件包括耦合到偏置电源的偏置电极，偏置电源被配置为控制等离子体离子朝向可移动晶片支撑件的轰击。

    Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency
    6.
    发明授权
    Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency 有权
    具有可变频率的VHF电容耦合等离子体源的等离子体反应器装置

    公开(公告)号：US07645357B2

    公开(公告)日：2010-01-12

    申请号：US11410697

    申请日：2006-04-24

    申请人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

    发明人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

    IPC分类号： C23F1/00 ,  H01L19/00 ,  H05B31/26

    CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32174

    摘要： A plasma reactor for processing a workpiece includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, a capacitively coupled plasma source power applicator comprising a source power electrode at one of: (a) the ceiling (b) the workpiece support, and plural VHF power generators of different fixed frequencies coupled to the capacitively coupled source power applicator, and a controller for independently controlling the power output levels of the plural VHF generators so as to control an effective VHF frequency applied to the source power electrode. In a preferred embodiment, the reactor further includes a plasma bias power applicator that includes a bias power electrode in the workpiece support and one or more RF bias power generators of different frequencies coupled to the plasma bias power applicator.

    摘要翻译： 一种用于处理工件的等离子体反应器包括反应室和腔室内的工件支撑件，腔室具有面向工件支撑件的天花板，电容耦合的等离子体源功率施加器，其包括源功率电极，其特征在于：（a）天花板 （b）工件支撑件，以及耦合到电容耦合的源功率施加器的不同固定频率的多个甚高频发电机，以及用于独立地控制多个VHF发生器的功率输出电平的控制器，以便控制施加到 源极电极。 在优选实施例中，反应器还包括等离子体偏置功率施加器，其包括工件支撑件中的偏置功率电极和耦合到等离子体偏置功率施加器的不同频率的一个或多个RF偏置功率发生器。

    PULSED-PLASMA SYSTEM WITH PULSED SAMPLE BIAS FOR ETCHING SEMICONDUCTOR SUBSTRATES
    10.
    发明申请
    PULSED-PLASMA SYSTEM WITH PULSED SAMPLE BIAS FOR ETCHING SEMICONDUCTOR SUBSTRATES 有权
    具有用于蚀刻半导体衬底的脉冲样品偏置的脉冲等离子体系统

    公开(公告)号：US20080197110A1

    公开(公告)日：2008-08-21

    申请号：US11677472

    申请日：2007-02-21

    申请人： Tae Won Kim ,  Kyeong-Tae Lee ,  Alexander Paterson ,  Valentin N. Todorov ,  Shashank C. Deshmukh

    发明人： Tae Won Kim ,  Kyeong-Tae Lee ,  Alexander Paterson ,  Valentin N. Todorov ,  Shashank C. Deshmukh

    IPC分类号： C23F1/00 ,  H01L21/306

    CPC分类号： H01L21/31116 ,  C23F4/00 ,  H01J37/32009 ,  H01L21/3065 ,  H01L21/32137

    摘要： A pulsed plasma system with pulsed sample bias for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. A negative bias is applied to the sample during the ON state of each duty cycle, while a zero bias is applied to the sample during the OFF state of each duty cycle. In another embodiment, a first portion of a sample is removed by applying a continuous plasma process. The continuous plasma process is then terminated and a second portion of the sample is removed by applying a pulsed plasma process.

    摘要翻译： 描述了具有用于蚀刻半导体结构的脉冲样本偏置的脉冲等离子体系统。 在一个实施例中，通过施加脉冲等离子体处理来去除样品的一部分，其中脉冲等离子体处理包括多个占空比。 在每个占空比的导通状态期间，向样品施加负偏压，而在每个占空比的OFF状态期间，零样本被施加到样品。 在另一个实施方案中，通过施加连续的等离子体工艺来除去样品的第一部分。 然后连续等离子体处理被终止，并且通过施加脉冲等离子体工艺来除去样品的第二部分。