利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

37 条记录 (耗时 0.348 秒)

    High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck
    1.
    发明授权
    High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck 有权
    高AC电流高RF功率AC-RF去耦滤波器用于等离子体反应器加热静电卡盘

    公开(公告)号：US07777152B2

    公开(公告)日：2010-08-17

    申请号：US11671927

    申请日：2007-02-06

    申请人： Valentin N. Todorov ,  Michael D. Willwerth ,  Alexander Paterson ,  Brian K. Hatcher ,  James E. Sammons, III ,  John P. Holland

    发明人： Valentin N. Todorov ,  Michael D. Willwerth ,  Alexander Paterson ,  Brian K. Hatcher ,  James E. Sammons, III ,  John P. Holland

    IPC分类号： B23K9/02 ,  H01P5/08 ,  C23C16/00

    CPC分类号： H05H1/46 ,  H01J37/32706 ,  H03H1/0007

    摘要： An RF blocking filter isolates a two-phase AC power supply from at least 2 kV p-p of power of an HF frequency that is reactively coupled to a resistive heating element, while conducting several kW of 60 Hz AC power from the two-phase AC power supply to the resistive heating element without overheating, the two-phase AC power supply having a pair of terminals and the resistive heating element having a pair of terminals. The filter includes a pair of cylindrical non-conductive envelopes each having an interior diameter between about one and two inches and respective pluralities of fused iron powder toroids of magnetic permeability on the order of about 10 stacked coaxially within respective ones of the pair of cylindrical envelopes, the exterior diameter of the toroids being about the same as the interior diameter of each of the envelopes. A pair of wire conductors of diameter between 3 mm and 3.5 mm are helically wound around corresponding ones of the pair of envelopes to form respective inductor windings in the range of about 16 to 24 turns for each the envelope, each of the conductors having an input end and an output end. The input end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the two-phase AC power supply, and the output end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the resistive heating element.

    摘要翻译： RF阻断滤波器将两相交流电源从反应耦合到电阻加热元件的HF频率的至少2kV pp的功率隔离，同时从两相交流电源进行几kW的60Hz AC电力 供给电阻加热元件而不会过热，两相交流电源具有一对端子和电阻加热元件具有一对端子。 该过滤器包括一对圆柱形非导电封套，每一个内径均在约一英寸至两英寸之间，并且相应的多个约10层的磁导率的熔融铁粉末环形环共轴同心地位于一对圆柱形封套中 环形线圈的外径与每个信封的内径大致相同。 直径在3毫米与3.5毫米之间的一对电线导体螺旋缠绕在一对信封的相应的一对信封上，以形成每个封套约16至24匝范围的相应的电感绕组，每个导体具有一个输入 结束和输出结束。 每个导体的输入端耦合到两相交流电源的一对端子中的对应的一个，并且每一个导体的输出端耦合到该对端子中相应的一个端子 的电阻加热元件。

    HIGH AC CURRENT HIGH RF POWER AC-RF DECOUPLING FILTER FOR PLASMA REACTOR HEATED ELECTROSTATIC CHUCK
    2.
    发明申请
    HIGH AC CURRENT HIGH RF POWER AC-RF DECOUPLING FILTER FOR PLASMA REACTOR HEATED ELECTROSTATIC CHUCK 有权
    用于等离子体反应器加热静电切割机的高交流电流高频功率AC-RF解码滤波器

    公开(公告)号：US20070284344A1

    公开(公告)日：2007-12-13

    申请号：US11671927

    申请日：2007-02-06

    申请人： Valentin N. Todorov ,  Michael D. Willwerth ,  Alexander Paterson ,  Brian K. Hatcher ,  James E. Sammons ,  John P. Holland

    发明人： Valentin N. Todorov ,  Michael D. Willwerth ,  Alexander Paterson ,  Brian K. Hatcher ,  James E. Sammons ,  John P. Holland

    IPC分类号： B23K9/00

    CPC分类号： H05H1/46 ,  H01J37/32706 ,  H03H1/0007

    摘要： An RF blocking filter isolates a two-phase AC power supply from at least 2 kV p-p of power of an HF frequency that is reactively coupled to a resistive heating element, while conducting several kW of 60 Hz AC power from the two-phase AC power supply to the resistive heating element without overheating, the two-phase AC power supply having a pair of terminals and the resistive heating element having a pair of terminals. The filter includes a pair of cylindrical non-conductive envelopes each having an interior diameter between about one and two inches and respective pluralities of fused iron powder toroids of magnetic permeability on the order of about 10 stacked coaxially within respective ones of the pair of cylindrical envelopes, the exterior diameter of the toroids being about the same as the interior diameter of each of the envelopes. A pair of wire conductors of diameter between 3 mm and 3.5 mm are helically wound around corresponding ones of the pair of envelopes to form respective inductor windings in the range of about 16 to 24 turns for each the envelope, each of the conductors having an input end and an output end. The input end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the two-phase AC power supply, and the output end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the resistive heating element.

    摘要翻译： RF阻断滤波器将两相交流电源从反应耦合到电阻加热元件的HF频率的至少2kV pp的功率隔离，同时从两相交流电源进行几kW的60Hz AC电力 供给电阻加热元件而不会过热，两相交流电源具有一对端子和电阻加热元件具有一对端子。 该过滤器包括一对圆柱形非导电封套，每一个内径均在约一英寸至两英寸之间，并且相应的多个约10层的磁导率的熔融铁粉末环形环共轴同心地位于一对圆柱形封套中 环形线圈的外径与每个信封的内径大致相同。 直径在3毫米与3.5毫米之间的一对电线导体螺旋缠绕在一对信封的相应的一对信封上，以形成每个封套约16至24匝范围内的相应的电感绕组，每个导体具有一个输入 结束和输出结束。 每个导体的输入端耦合到两相交流电源的一对端子中的对应的一个，并且每一个导体的输出端耦合到该对端子中相应的一个端子 的电阻加热元件。

    PLASMA PROCESS FOR INDUCTIVELY COUPLING POWER THROUGH A GAS DISTRIBUTION PLATE WHILE ADJUSTING PLASMA DISTRIBUTION
    3.
    发明申请
    PLASMA PROCESS FOR INDUCTIVELY COUPLING POWER THROUGH A GAS DISTRIBUTION PLATE WHILE ADJUSTING PLASMA DISTRIBUTION 有权
    通过调整等离子体分配的气体分配板进行电感耦合等离子体处理

    公开(公告)号：US20080206483A1

    公开(公告)日：2008-08-28

    申请号：US11679122

    申请日：2007-02-26

    申请人： ALEXANDER PATERSON ,  Valentin N. Todorov ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond ,  John P. Holland

    发明人： ALEXANDER PATERSON ,  Valentin N. Todorov ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond ,  John P. Holland

    IPC分类号： H05H1/00

    CPC分类号： H01J37/32082 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3244

    摘要： A method of processing a workpiece in the chamber of a plasma reactor having a ceiling overlying the workpiece by introducing a process gas into the chamber through a gas distribution plate in the ceiling. The gas is introduced by distributing gas flow from a first gas input to plural gas distribution orifices extending through a manifold of the gas distribution plate, and distributing gas flow from each of the plural gas distribution orifices to plural gas injection orifices in a showerhead of the gas distribution plate. The method further includes restricting gas flow in the gas distribution plate to paths having arcuate lengths about an axis of symmetry less than a complete circle. The method also includes capacitively and inductively coupling plasma source power into the chamber through the gas distribution. The method further includes adjusting the plasma ion density radial distribution in the process region by adjusting the ratio between the amounts of the capacitively coupled VHF power and the inductively coupled power.

    摘要翻译： 一种在等离子体反应器的腔室中处理工件的方法，该等离子体反应器具有通过天花板中的气体分配板将工艺气体引入室中，该顶板覆盖工件。 通过将气体流从第一气体输入分配到延伸穿过气体分配板的歧管的多个气体分配孔，并将气体流从多个气体分配孔中的每一个分配到多个气体喷射孔中，从而引入气体 气体分配板。 该方法还包括将气体分配板中的气流限制在具有小于完整圆的对称轴的弧形长度的路径上。 该方法还包括通过气体分布将等离子体源功率电容和电感耦合到腔室中。 该方法还包括通过调节电容耦合VHF功率和电感耦合功率的量之间的比例来调节处理区域中的等离子体离子密度径向分布。

    Tandem etch chamber plasma processing system
    6.
    发明授权
    Tandem etch chamber plasma processing system 有权
    串联腐蚀室等离子体处理系统

    公开(公告)号：US06962644B2

    公开(公告)日：2005-11-08

    申请号：US10241653

    申请日：2002-09-10

    申请人： Alexander Paterson ,  Valentin N. Todorov ,  Jon McChesney ,  Gerhard M. Schneider ,  David Palagashvili ,  John P. Holland ,  Michael S. Barnes

    发明人： Alexander Paterson ,  Valentin N. Todorov ,  Jon McChesney ,  Gerhard M. Schneider ,  David Palagashvili ,  John P. Holland ,  Michael S. Barnes

    IPC分类号： H01L21/00 ,  C23F1/00 ,  C23C16/00 ,  H01L21/306

    CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J37/32458

    摘要： A method and apparatus for processing wafers including a chamber defining a plurality of isolated processing regions. The isolated processing regions have an upper end and a lower end. The chamber further includes a plurality of plasma generation devices each disposed adjacent the upper end of each isolated processing region, and one of a plurality of power supplies connected to each plasma generation device. The output frequency of the plurality of power supplies are phase and/or frequency locked together. Additionally, the chamber includes a plurality of gas distribution assemblies. Each gas distribution assembly is disposed within each isolated processing region. A movable wafer support is disposed within each isolated processing region to support a wafer for plasma processing thereon. The movable wafer support includes a bias electrode coupled to a bias power supply configured to control the bombardment of plasma ions toward the movable wafer support.

    摘要翻译： 一种用于处理晶片的方法和装置，包括限定多个隔离处理区域的腔室。 隔离处理区域具有上端和下端。 所述室还包括多个等离子体产生装置，每个等离子体产生装置邻近每个隔离处理区域的上端设置，并且连接到每个等离子体产生装置的多个电源中的一个。 多个电源的输出频率是相位和/或频率锁定在一起的。 另外，腔室包括多个气体分配组件。 每个气体分配组件设置在每个隔离的处理区域内。 可移动的晶片支撑件设置在每个隔离的处理区域内以支撑用于等离子体处理的晶片。 可移动晶片支撑件包括耦合到偏置电源的偏置电极，偏置电源被配置为控制等离子体离子朝向可移动晶片支撑件的轰击。

    PLASMA REACTOR WITH AN OVERHEAD INDUCTIVE ANTENNA AND AN OVERHEAD GAS DISTRIBUTION SHOWERHEAD
    7.
    发明申请
    PLASMA REACTOR WITH AN OVERHEAD INDUCTIVE ANTENNA AND AN OVERHEAD GAS DISTRIBUTION SHOWERHEAD 审中-公开
    具有超导电感天线和超高压气体分布的等离子体反应器

    公开(公告)号：US20080236490A1

    公开(公告)日：2008-10-02

    申请号：US11693089

    申请日：2007-03-29

    申请人： ALEXANDER PATERSON ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond ,  John P. Holland

    发明人： ALEXANDER PATERSON ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond ,  John P. Holland

    IPC分类号： C23C16/00

    CPC分类号： H01J37/3244 ,  H01J37/32091 ,  H01J37/321

    摘要： A plasma reactor for processing a workpiece includes a gas distribution showerhead having a lid, a manifold having a top surface facing the lid and a bottom surface opposing the top surface. Top surface channels in the manifold top surface form a first set of plural paths extending from a first gas input point to plural path ends of the top surface channels. Gas distribution orifices extend axially through the manifold at respective ones of the path ends. Bottom surface channels in the manifold bottom surface form plural paths extending from locations at each of the gas distribution orifices to plural gas distribution path ends. The showerhead further includes a showerhead piece facing the manifold bottom surface and having plural gas injection orifices extending through the showerhead piece.

    摘要翻译： 用于加工工件的等离子体反应器包括具有盖的气体分配喷头，具有面向盖的顶表面的歧管和与顶表面相对的底表面。 歧管顶表面中的顶表面通道形成从第一气体输入点延伸到顶表面通道的多个路径端的多个路径的第一组。 气体分配孔在相应的路径端轴向延伸穿过歧管。 歧管底表面中的底表面通道形成从每个气体分配孔处的位置延伸到多个气体分配路径端部的多个路径。 淋浴头还包括面向歧管底面的喷头片，并具有延伸穿过喷头片的多个气体喷射孔。

    Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency
    9.
    发明授权
    Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency 有权
    具有可变频率的VHF电容耦合等离子体源的等离子体反应器装置

    公开(公告)号：US07645357B2

    公开(公告)日：2010-01-12

    申请号：US11410697

    申请日：2006-04-24

    申请人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

    发明人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

    IPC分类号： C23F1/00 ,  H01L19/00 ,  H05B31/26

    CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32174

    摘要： A plasma reactor for processing a workpiece includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, a capacitively coupled plasma source power applicator comprising a source power electrode at one of: (a) the ceiling (b) the workpiece support, and plural VHF power generators of different fixed frequencies coupled to the capacitively coupled source power applicator, and a controller for independently controlling the power output levels of the plural VHF generators so as to control an effective VHF frequency applied to the source power electrode. In a preferred embodiment, the reactor further includes a plasma bias power applicator that includes a bias power electrode in the workpiece support and one or more RF bias power generators of different frequencies coupled to the plasma bias power applicator.

    摘要翻译： 一种用于处理工件的等离子体反应器包括反应室和腔室内的工件支撑件，腔室具有面向工件支撑件的天花板，电容耦合的等离子体源功率施加器，其包括源功率电极，其特征在于：（a）天花板 （b）工件支撑件，以及耦合到电容耦合的源功率施加器的不同固定频率的多个甚高频发电机，以及用于独立地控制多个VHF发生器的功率输出电平的控制器，以便控制施加到 源极电极。 在优选实施例中，反应器还包括等离子体偏置功率施加器，其包括工件支撑件中的偏置功率电极和耦合到等离子体偏置功率施加器的不同频率的一个或多个RF偏置功率发生器。