摘要:
Semiconductor devices having a dual polysilicon electrode and a method of manufacturing are provided. The semiconductor devices include a first polysilicon layer deposited on a second polysilicon layer. Each polysilicon layer may be doped individually. The method also allows for some semiconductor devices on a wafer to have a single polysilicon wafer and other devices to have a dual polysilicon layer. In one embodiment, the semiconductor devices are utilized to form a memory device wherein the storage capacitors and transistors located in the cell region are formed with a dual polysilicon layer and devices in the periphery region are formed with a single polysilicon layer.
摘要:
Semiconductor devices having a dual polysilicon electrode and a method of manufacturing are provided. The semiconductor devices include a first polysilicon layer deposited on a second polysilicon layer. Each polysilicon layer may be doped individually. The method also allows for some semiconductor devices on a wafer to have a single polysilicon wafer and other devices to have a dual polysilicon layer. In one embodiment, the semiconductor devices are utilized to form a memory device wherein the storage capacitors and transistors located in the cell region are formed with a dual polysilicon layer and devices in the periphery region are formed with a single polysilicon layer.
摘要:
A novel SOC structure and method of making the same are provided. An SOC comprises a logic region, an SRRM and a DRAM region. The storage capacitor in a DRAM cell is formed in the first dielectric layer in an MIM (metal-insulator-metal) configuration, having a large vertical surface area. A butted contact, formed in said first dielectric layer, comprises a bottom portion abutting a first and second conductive region in an SRAM cell, and a vertically aligned top portion coupled to a first metal layer. The top portion has a substantially larger depth than that of the bottom portion, while substantially smaller in size. Forming this SOC structure does not require adding complex, error-prone additional processing steps on an existing CMOS manufacturing process, thus having little impact on the overall SOC product yield.
摘要:
Embedded memories. The devices include a substrate, a first dielectric layer, a second dielectric layer, a third dielectric layer, and a plurality of capacitors. The substrate comprises transistors. The first dielectric layer, embedding first and second conductive plugs electrically connecting the transistors therein, overlies the substrate. The second dielectric layer, comprising a plurality of capacitor openings exposing the first conductive plugs, overlies the first dielectric layer. The capacitors comprise a plurality of bottom plates, respectively disposed in the capacitor openings, electrically connecting the first conductive plugs, a plurality of capacitor dielectric layers respectively overlying the bottom plates, and a top plate, comprising a top plate opening, overlying the capacitor dielectric layers. The top plate opening exposes the second dielectric layer, and the top plate is shared by the capacitors.
摘要:
Embedded memories. The devices include a substrate, a first dielectric layer, a second dielectric layer, a third dielectric layer, and a plurality of capacitors. The substrate comprises transistors. The first dielectric layer, embedding first and second conductive plugs electrically connecting the transistors therein, overlies the substrate. The second dielectric layer, comprising a plurality of capacitor openings exposing the first conductive plugs, overlies the first dielectric layer. The capacitors comprise a plurality of bottom plates, respectively disposed in the capacitor openings, electrically connecting the first conductive plugs, a plurality of capacitor dielectric layers respectively overlying the bottom plates, and a top plate, comprising a top plate opening, overlying the capacitor dielectric layers. The top plate opening exposes the second dielectric layer, and the top plate is shared by the capacitors.
摘要:
A metal-insulator-metal (MIM) capacitor structure and method of manufacturing thereof. A plurality of MIM capacitor patterns is formed in two or more insulating layers. The insulating layers may comprise a via layer and a metallization layer of a semiconductor device. A top portion of the top insulating layer is recessed in a region between at least two adjacent MIM capacitor patterns. When the top plate material of the MIM capacitors is deposited, the top plate material fills the recessed area of the top insulating layer between the adjacent MIM capacitor pattern, forming a connecting region that couples together the top plates of the adjacent MIM capacitors. A portion of the MIM capacitor bottom electrode may be formed in a first metallization layer of the semiconductor device.
摘要:
A three dimensional polysilicon resistor and a method by which the three dimensional polysilicon resistor is manufactured. A semiconductor substrate has formed upon its surface an insulating layer. The insulating layer has a minimum of one aperture formed at least partially through the insulating layer. A polysilicon layer is formed upon the insulating layer and formed conformally into the aperture(s) within the insulating layer. The polysilicon layer is then patterned to form a resistor which includes the portion of the polysilicon layer which resides within the aperture(s).
摘要:
A fabrication process for integrating stacked capacitor, DRAM devices, and thin film transistor, SRAM devices, has been developed. The fabrication process features combining key operations used to create transfer gate transistor structures, and access transistor structures for the DRAM and SRAM devices. In addition, process steps, used to create a capacitor structure, for the DRAM device, and a thin film transistor structure, for the SRAM device, are also shared. Another key feature of this invention is a buried contact structure, used for the SRAM device.
摘要:
A method for fabricating reduced area metal contacts to a thin polysilicon layer contact structure having low ohmic resistance was achieved. The method involves forming contact openings in an insulating layer over a buffer layer composed of a thick polysilicon layer. A portion of the sidewall in the opening includes a patterned thin polysilicon layer that forms part of a semiconductor device and also forms the electrical connection to the metal contact. The method provides metal contacts having very low resistance and reduced area for increased device packing densities. The metal contact structure also eliminates the problem of forming P.sup.+ /N.sup.+ non-ohmic junctions usually associated with making P.sup.+ /N.sup.+ stacked contact. The method further allows large latitude in etching the contact opening and thereby provides a very manufacturable process.
摘要翻译:实现了将薄区域金属触点制造成具有低欧姆电阻的薄多晶硅层接触结构的方法。 该方法包括在由厚多晶硅层构成的缓冲层上形成绝缘层中的接触开口。 开口中的侧壁的一部分包括形成半导体器件的一部分并且还形成与金属接触件的电连接的图案化的多晶硅层。 该方法提供具有非常低的电阻和减小的面积的金属接触以增加器件封装密度。 金属接触结构也消除了形成通常与P + / N +堆叠接触相关联的P + / N +非欧姆结的问题。 该方法进一步允许蚀刻接触开口的大的纬度,从而提供非常可制造的工艺。
摘要:
A method for fabricating buried metal plug structures for multi-polysilicon layer interconnects and for concurrently making metal plugs on semiconductor integrated circuits, such as DRAM and SRAM, was achieved. The method involved forming contact opening in an insulating layer over opening in a patterned polysilicon layer. The opening in the polysilicon layer aligned over source/drain contact areas on the substrate and providing a means for forming self-aligned contact openings. Buried metal plugs in the contact openings form interconnects between the polysilicon layer and the source/drains. And, by merging the process steps, concurrently forming metal plug interconnects for contacts to semiconductor devices and first level metal. The process is applicable to the formation of bit line contacts on DRAM and SRAM circuits and simultaneously form the peripheral contact on the chip.