公开(公告)号：US20050042743A1

公开(公告)日：2005-02-24

申请号：US10500975

申请日：2003-07-10

申请人： Chihiro Kawai ,  Masami Tatsumi

发明人： Chihiro Kawai ,  Masami Tatsumi

IPC分类号： A61L9/16 ,  A61L9/20 ,  B01J35/00 ,  C02F1/32 ,  C02F1/72 ,  C09K11/02 ,  C09K11/08 ,  C09K11/54 ,  C09K11/59 ,  C09K11/62 ,  C09K11/64 ,  C09K11/65 ,  C09K11/67 ,  C09K11/77 ,  H01L33/16 ,  H01L33/18 ,  H01L35/24 ,  C12M1/34

CPC分类号： H01L33/16 ,  A61L9/16 ,  A61L9/205 ,  B01J35/004 ,  C02F1/001 ,  C02F1/32 ,  C02F1/725 ,  C02F2101/30 ,  C02F2303/04 ,  C09K11/02 ,  C09K11/0883 ,  C09K11/54 ,  C09K11/59 ,  C09K11/62 ,  C09K11/64 ,  C09K11/65 ,  C09K11/672 ,  C09K11/77 ,  C09K11/7704 ,  C09K11/7766 ,  C09K11/7783 ,  H01L33/18 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a filter with which organic matter, bacteria, viruses, and other harmful substances can be trapped, and the trapped material can be sterilized and decomposed, at low cost and extremely high efficiency. A porous ceramic or metal is used as a substrate, and a porous semiconductor composed of a semiconductor material having a light emitting function is formed in the interior or on the surface of this substrate. An electrode is provided to this product to serve as a filter, voltage is applied so that ultraviolet light is emitted while a fluid is being filtered, and any harmful substances are filtered and simultaneously sterilized and decomposed. The porous semiconductor layer is preferably composed of columns grown perpendicular to the substrate plane, and has the function of emitting ultraviolet light with a wavelength of 400 nm or less. The pores in the porous substrate column are through-holes perpendicular to the substrate plane, and the average size of these pores is preferably from 0.1 to 100 μm. The distal ends of the columns preferably have a pointed shape. To manufacture, a suspension of semiconductor particles having a light emitting function is filtered through the porous substrate serving as a filter medium so as to form a deposited layer of semiconductor particles on the porous substrate surface. A deposited layer of p-type semiconductor particles and a deposited layer of n-type semiconductor particles may also be formed so that these form a pn junction. Further, the present invention is characterized in that an insulating layer is formed on the top and bottom surfaces of the porous semiconductor layer, and semiconductor particles are dispersed in the insulating layer, with the bandgap of the semiconductor particles in the porous light emitting layer or the porous semiconductor layer being at least 3.2 eV, and being doped with gadolinium, which is the light emitting center. In addition, the porous semiconductor layer may be made of porous silicon nitride composed of columnar Si3N4 particles with an average aspect ratio of at least 3 and an oxide-based binder phase containing at least one of rare earth element, and emit visible light or ultraviolet light.

公开(公告)号：US07468529B2

公开(公告)日：2008-12-23

申请号：US10500975

申请日：2003-07-10

申请人： Chihiro Kawai ,  Masami Tatsumi

发明人： Chihiro Kawai ,  Masami Tatsumi

IPC分类号： H01L33/00 ,  H01L21/208

CPC分类号： H01L33/16 ,  A61L9/16 ,  A61L9/205 ,  B01J35/004 ,  C02F1/001 ,  C02F1/32 ,  C02F1/725 ,  C02F2101/30 ,  C02F2303/04 ,  C09K11/02 ,  C09K11/0883 ,  C09K11/54 ,  C09K11/59 ,  C09K11/62 ,  C09K11/64 ,  C09K11/65 ,  C09K11/672 ,  C09K11/77 ,  C09K11/7704 ,  C09K11/7766 ,  C09K11/7783 ,  H01L33/18 ,  H01L2924/0002 ,  H01L2924/00

摘要： A filter for trapping, sterilizing, and decomposing organic matter, bacteria, viruses, and other harmful substances is provided at low cost and extremely high efficiency. A semiconductor material having a light emitting function is formed in the interior or on the surface of a porous ceramic material substrate by deposition from a suspension of semiconductor particles, and an electrode provided to serve as a filter. Voltage is applied so that ultraviolet light is emitted while a fluid is being filtered, and any harmful substances are filtered and simultaneously sterilized and decomposed.

摘要翻译： 以低成本和极高的效率提供了用于捕集，消毒和分解有机物，细菌，病毒和其他有害物质的过滤器。 具有发光功能的半导体材料通过从半导体颗粒的悬浮液沉积而形成在多孔陶瓷材料基板的内部或表面上，以及提供用作过滤器的电极。 施加电压使得在流体被过滤时发射紫外线，并且任何有害物质被过滤并同时消毒和分解。

公开(公告)号：USRE42279E1

公开(公告)日：2011-04-12

申请号：US12341876

申请日：2008-12-22

申请人： Tomohiro Kawase ,  Shinichi Sawada ,  Masami Tatsumi

发明人： Tomohiro Kawase ,  Shinichi Sawada ,  Masami Tatsumi

IPC分类号： C30B9/00

CPC分类号： C30B29/42 ,  C30B11/06 ,  C30B11/12

摘要： A method of preparing a compound semiconductor crystal is able to dope the crystal with carbon with high reproducibility. The method includes the steps of sealing a carbon oxide gas of a predetermined partial pressure and a compound semiconductor material in a gas-impermeable airtight vessel, increasing the temperature of the vessel to melt the compound semiconductor material sealed in the vessel, and then decreasing the temperature of the vessel to solidify the melted compound semiconductor material to grow a compound semiconductor crystal containing a predetermined amount of carbon. With this method, a compound semiconductor crystal with a carbon concentration of 0.1×1015cm−3 to 20×1015cm−3 is prepared with high reproducibility.

摘要翻译： 制备化合物半导体晶体的方法能够以高重现性将碳掺杂。 该方法包括以下步骤：将不规则分压的氧化碳气体和化合物半导体材料密封在不透气体的气密容器中，增加容器的温度以熔化密封在容器中的化合物半导体材料，然后将 使熔融的化合物半导体材料固化，生长含有规定量的碳的化合物半导体晶体。 通过该方法，以高的再现性制备碳浓度为0.1×10 15 cm -3〜20×10 15 cm -3的化合物半导体晶体。

公开(公告)号：US06572700B2

公开(公告)日：2003-06-03

申请号：US09779097

申请日：2001-02-07

申请人： Tomohiro Kawase ,  Katsushi Hashio ,  Shin-ichi Sawada ,  Masami Tatsumi

发明人： Tomohiro Kawase ,  Katsushi Hashio ,  Shin-ichi Sawada ,  Masami Tatsumi

IPC分类号： C30B2942

CPC分类号： C30B15/00 ,  C30B11/00 ,  C30B29/42 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1096

摘要： An apparatus and method of providing a large semiconductor crystal at a low cost are provided. The apparatus of producing a semiconductor crystal includes a reactor tube having an open end at least one end side, formed of any one material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, and aluminum oxide, or of a composite material with any one material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, boron nitride, aluminum oxide, magnesium oxide, mullite, and carbon as a base, and having an oxidation-proof or airtight film formed on the surface of the base, a kanthal heater arranged around the reactor tube in the atmosphere, a flange attached at the open end to seal the reactor tube, and a crucible mounted in the reactor tube to store material of a semiconductor crystal. The material stored in the crucible is heated and melted to form material melt. The material melt is solidified to grow a semiconductor crystal.

摘要翻译： 提供了一种以低成本提供大型半导体晶体的装置和方法。 制造半导体晶体的装置包括具有开口端至少一端侧的反应器管，由选自碳化硅，氮化硅，氮化铝和氧化铝的任何一种材料形成，或由复合材料 使用选自碳化硅，氮化硅，氮化铝，氮化硼，氧化铝，氧化镁，莫来石和碳作为基底的任何一种材料，并且在其表面上形成有防氧化或气密的膜 基座，在大气中布置在反应器管周围的kanthal加热器，连接在开口端以密封反应器管的凸缘以及安装在反应器管中以存储半导体晶体的材料的坩埚。 储存在坩埚中的材料被加热熔化以形成材料熔体。 材料熔体固化以生长半导体晶体。

公开(公告)号：US5145550A

公开(公告)日：1992-09-08

申请号：US038447

申请日：1987-04-14

申请人： Koji Tada ,  Masami Tatsumi

发明人： Koji Tada ,  Masami Tatsumi

IPC分类号： C30B29/40 ,  C30B15/04 ,  C30B27/02

CPC分类号： C30B27/02 ,  C30B29/40

摘要： A process for growing single crystals of the III-V compound semiconductor is provided, which is the vapor pressure control method using a vertical puller and which is characterized by dividing the surface area of the melt into two sections, covering one section with a liquid encapsulant while remaining the other section in contact with the atmosphere of the vessel (furnace), and this process may be preferably carried out by using an apparatus which comprises a sealable vessel, an upper shaft, a lower shaft, a plurality of heaters, a crucible and a means for dividing the surface of melt contained in the crucible, and as a result single crystal of III-V compound semiconductor having various excellent properties such as low impurity content (high purity), low dislocation density, and the like may be obtained.

摘要翻译： 提供了用于生长III-V族化合物半导体的单晶的方法，其是使用垂直拉拔器的蒸气压控制方法，其特征在于将熔体的表面积分成两部分，用液体密封剂覆盖一个部分 同时保留与容器（炉）的气氛接触的另一部分，并且该方法可以优选地通过使用包括可密封容器，上轴，下轴，多个加热器，坩埚的装置 以及用于分割坩埚中所含的熔体表面的方法，结果可以获得具有各种优异性能如高杂质含量（高纯度），低位错密度等的III-V族化合物半导体的单晶 。

公开(公告)号：US4678534A

公开(公告)日：1987-07-07

申请号：US733361

申请日：1985-05-13

申请人： Koji Tada ,  Masami Tatsumi ,  Toshihiro Kotani ,  Shinichi Sawada

发明人： Koji Tada ,  Masami Tatsumi ,  Toshihiro Kotani ,  Shinichi Sawada

IPC分类号： C30B15/10 ,  C30B27/02 ,  C30B29/40 ,  C30B29/48 ,  H01L21/02 ,  H01L21/208

CPC分类号： C30B15/10 ,  C30B27/02 ,  C30B29/40 ,  Y10S117/907 ,  Y10T117/106

摘要： A modified liquid encapsulated Czockralski method for growing a single crystal of compound semiconductor is disclosed. This method uses two vessels. An inner vessel is filled with an inactive gas, a gas of an element of group V and optionally an impurity gas. The inner vessel encloses a crucible containing compound semiconductor material, an encapsulant material, and optionally an impurity element. An outer vessel is filled only with the inactive gas. The total pressure of the inner atmosphere is equal to or higher than that of the outer atmosphere. The partial pressure of the gas of the element of group V is larger than the dissociation pressure of the element of group V near the melting point of the compound semiconductor.

摘要翻译： 公开了用于生长化合物半导体的单晶的改进的液体封装的Czockralski方法。 这种方法使用两个血管。 内部容器填充有惰性气体，第V族元素的气体和任选的杂质气体。 内部容器包含含有化合物半导体材料的坩埚，密封剂材料和任选的杂质元素。 外部容器仅用惰性气体填充。 内部气氛的总压力等于或高于外部气氛的总压力。 V族元素的气体分压大于化合物半导体熔点附近的V族元素的离解压力。

公开(公告)号：US6007622A

公开(公告)日：1999-12-28

申请号：US843124

申请日：1997-04-25

申请人： Tomohiro Kawase ,  Masami Tatsumi

发明人： Tomohiro Kawase ,  Masami Tatsumi

IPC分类号： C30B11/00 ,  C30B29/40 ,  C30B29/42 ,  C30B11/04

CPC分类号： C30B11/10 ,  C30B27/00 ,  C30B29/40 ,  C30B29/42

摘要： A method is provided for preparing, with high reproducibility, a carbon-doped group III-V compound semiconductor crystal having favorable electrical characteristics and having impurities removed therefrom, and in which the amount of doped carbon can be adjusted easily during crystal growth. This method includes the steps of: filling a crucible with compound raw material, solid carbon, and boron oxide; sealing the filled crucible gas impermeable material; heating and melting the compound raw material under the sealed state in the airtight vessel; and solidifying the melted compound raw material to grow a carbon-doped compound semiconductor crystal.

摘要翻译： 提供了一种以高再现性制备具有良好电特性并从其中除去杂质的碳掺杂III-V族化合物半导体晶体的方法，其中在晶体生长期间可以容易地调节掺杂碳的量。 该方法包括以下步骤：用复合原料，固体碳和氧化硼填充坩埚; 密封填充坩埚气体不渗透材料; 在密封状态下将复合原料加热并熔化在气密容器中; 并固化熔融的复合原料以生长掺碳化合物半导体晶体。

公开(公告)号：US4634490A

公开(公告)日：1987-01-06

申请号：US679895

申请日：1984-12-10

申请人： Masami Tatsumi ,  Shin-ichi Sawada ,  Ryusuke Nakai

发明人： Masami Tatsumi ,  Shin-ichi Sawada ,  Ryusuke Nakai

IPC分类号： C30B15/26 ,  G01N23/207

CPC分类号： C30B15/26 ,  G01N23/207

摘要： Single crystal during growth is irradiated by an slitted X-ray beam and the diffracted X-ray beam from the crystal is monitored by an image amplifier with a two dimensional manner so that the diffracted X-ray can be monitored by the image amplifier even if there occurs change of the diameter of the crystal. A half portion of the single crystal during growth is irradiated by a slitted X-ray beam and the other half portion of the crystal is irradiated by the X-ray beam over the entire height of the crystal so that the Laue spots of the crystal growth is displayed on one half portion of the display of the image amplifier and a shape of the crystal being pulled up is monitored in another half portion of the display of the image amplifier.

摘要翻译： 生长期间的单晶由切割的X射线束照射，并且来自晶体的衍射X射线束以二维方式由图像放大器监测，使得衍射的X射线可被图像放大器监测，即使 发生晶体直径的变化。 生长期间单晶的一半部分被切割的X射线束照射，并且晶体的另一半部分在晶体的整个高度上被X射线束照射，使得晶体生长的Laue斑点 被显示在图像放大器的显示器的一半部分上，并且在图像放大器的显示器的另一半部分中监视被上拉的晶体的形状。

公开(公告)号：US4603096A

公开(公告)日：1986-07-29

申请号：US684732

申请日：1984-12-21

申请人： Koji Tada ,  Yoshiki Kuhara ,  Masami Tatsumi

发明人： Koji Tada ,  Yoshiki Kuhara ,  Masami Tatsumi

IPC分类号： G03H1/02 ,  G03H1/04

CPC分类号： G03H1/02 ,  G03H2001/026 ,  G03H2001/0268

摘要： A hologram recording material comprises one of bismuth silicon oxide and bismuth germanium oxide, and Fe added to these material. The density of Fe is 10 p.p.m.

摘要翻译： 全息记录材料包括氧化铋和氧化铋锗中的一种，并将Fe添加到这些材料中。 Fe的密度为10 p.p.m。

公开(公告)号：USRE39778E1

公开(公告)日：2007-08-21

申请号：US09824965

申请日：2001-04-03

申请人： Tomohiro Kawase ,  Masami Tatsumi

发明人： Tomohiro Kawase ,  Masami Tatsumi

IPC分类号： C30B11/04

CPC分类号： C30B11/10 ,  C30B27/00 ,  C30B29/40 ,  C30B29/42

摘要： A method is provided for preparing, with high reproducibility, a carbon-doped group III-V compound semiconductor crystal having favorable electrical characteristics and having impurities removed therefrom, and in which the amount of doped carbon can be adjusted easily during crystal growth. This method includes the steps of: filling a crucible with compound raw material, solid carbon, and boron oxide; sealing the filled crucible within an airtight vessel formed of a gas impermeable material; heating and melting the compound raw material under the sealed state in the airtight vessel; and solidifying the melted compound raw material to grow a carbon-doped compound semiconductor crystal.

摘要翻译： 提供了一种以高再现性制备具有良好电特性并从其中除去杂质的碳掺杂III-V族化合物半导体晶体的方法，其中在晶体生长期间可以容易地调节掺杂碳的量。 该方法包括以下步骤：用复合原料，固体碳和氧化硼填充坩埚; 将填充的坩埚密封在由不透气材料形成的气密容器内; 在密封状态下将复合原料加热并熔化在气密容器中; 并固化熔融的复合原料以生长掺碳化合物半导体晶体。