Abstract:
A data protecting method for protecting a sub-directory and at least one pre-stored file in a rewritable non-volatile memory module is provided. The method includes receiving a write command from a host system and determining whether a write address indicated by the write command is an address storing a file description block of the sub-directory. The method also includes, when the write address is the address storing a file description block of the sub-directory, determining whether a portion of data streams corresponding to the write command is the same as a corresponding content recorded in the file description block of the sub-directory. The method further includes, when the portion of data streams corresponding to the write command is not the same as the corresponding content recorded in the file description block of the sub-directory, transmitting a write failure signal to the host system.
Abstract:
An integrated circuit structure includes a substrate and a metallization layer over the substrate. The metallization layer includes a dielectric layer and metal lines in the dielectric layer. The integrated circuit structure further includes a sensing element over the metallization layer. The sensing element may be formed in passivation layers.
Abstract:
A system and a method of multi-objective capacity planning in the TFT-LCD panel manufacturing industry are provided. The system includes a capacity planning module and a multi-objective planning module. In the present method, a capacity planning plan corresponding to different objective is evaluated by the capacity planning module. A set of constraints of each objective is established by the multi-objective planning module according to characteristic parameters, so as to optimize the objective. Then, the optimized objectives are drawn into a graph to select an appropriate capacity planning plan.
Abstract:
An image sensor array includes a substrate having at least three image sensors located therein. The image sensor array also includes a blue filter positioned proximate to the first image sensor; a green filter proximate to the second image sensor; and a red filter proximate to the third image sensor. A first microlens is positionally arranged with the blue filter and the first image sensor; a second microlens is positionally arranged with the green filter and the second image sensor; and a third microlens is positionally arranged with the red filter and the third image sensor. The first microlens has a larger effective area than the second microlens, and the second microlens has a larger effective area than the third microlens.
Abstract:
A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel region and a periphery region, forming a light sensing element on the pixel region, and forming at least one transistor in the pixel region and at least one transistor in the periphery region. The step of forming the at least one transistor in the pixel region and periphery region includes forming a gate electrode in the pixel region and periphery region, depositing a dielectric layer over the pixel region and periphery region, partially etching the dielectric layer to form sidewall spacers on the gate electrode and leaving a portion of the dielectric layer overlying the pixel region, and forming source/drain (S/D) regions by ion implantation.
Abstract:
An image sensor array includes a substrate having at least three image sensors located therein. The image sensor array also includes a blue filter positioned proximate to the first image sensor; a green filter proximate to the second image sensor; and a red filter proximate to the third image sensor. A first microlens is positionally arranged with the blue filter and the first image sensor; a second microlens is positionally arranged with the green filter and the second image sensor; and a third microlens is positionally arranged with the red filter and the third image sensor. The first microlens has a larger effective area than the second microlens, and the second microlens has a larger effective area than the third microlens.
Abstract:
A data protecting method for protecting a sub-directory and at least one pre-stored file in a rewritable non-volatile memory module is provided. The method includes receiving a write command from a host system and determining whether a write address indicated by the write command is an address storing a file description block of the sub-directory. The method also includes, when the write address is the address storing a file description block of the sub-directory, determining whether a portion of data streams corresponding to the write command is the same as a corresponding content recorded in the file description block of the sub-directory. The method further includes, when the portion of data streams corresponding to the write command is not the same as the corresponding content recorded in the file description block of the sub-directory, transmitting a write failure signal to the host system.
Abstract:
A semiconductor device is disclosed. The semiconductor device provides a substrate comprising an image sensor region and a circuit region, wherein the circuit region comprises a pad region and a connecting region. A multilayer interconnect structure is formed on the substrate, wherein the multilayer interconnect structure comprises a plurality of dielectric layers, a plurality of lower wirings at the pad region and the connecting region, and a top wiring on at least one of the lower wirings at the connecting region. A passivation layer is formed over the multilayer interconnect structure. A pad structure is formed through the passivation layer and at least one of the dielectric layers on and electrically connected to at least one of the lower wirings at the pad region.
Abstract:
An integrated circuit structure includes a substrate and a metallization layer over the substrate. The metallization layer includes a dielectric layer and metal lines in the dielectric layer. The integrated circuit structure further includes a sensing element over the metallization layer. The sensing element may be formed in passivation layers.
Abstract:
A system and a method of multi-objective capacity planning in the thin film transistor liquid crystal display (TFT-LCD) panel manufacturing industry are provided. The system includes a capacity planning module and a multi-objective planning module. In the present method, a capacity planning plan corresponding to different objective is evaluated by the capacity planning module. A set of constraints of each objective is established by the multi-objective planning module according to characteristic parameters, so as to optimize the objective. Then, the optimized objectives are drawn into a graph to select an appropriate capacity planning plan.