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1.发明授权Radiation imager with single passivation dielectric for transistor and diode 失效具有用于晶体管和二极管的单个钝化电介质的辐射成像仪
公开(公告)号：US5399884A
公开(公告)日：1995-03-21
申请号：US149888
申请日：1993-11-10
IPC分类号： H01L21/77 , H01L21/84 , H01L27/12 , H01L27/146 , H01L27/15 , H01L29/786 , H01L31/10 , H01L27/14
CPC分类号： H01L27/14643 , H01L27/1214
摘要： A radiation imager includes a photosensor array having a plurality of individually addressable pixels, each pixel having a photosensor island and an associated thin film transistor (TFT) disposed to selectively electrically couple the photosensor island to a predetermined address line. In each pixel a single common passivation layer is disposed over the TFT and the photosensor island such that the passivation layer is adjacent to both the outer surfaces of the TFT and portions of the photosensor island. In a method of fabricating a photosensor array as described above, after depositon of a source-drain metal layer, the layer is left unpatterned until after the photosensor island has been formed. In the formation of the photosensor island the source-drain metal layer serves as an etch stop to protect the TFT. Following formation of the photosensor island, the source-drain metal layer is patterned to form source and drain electrodes and fabrication of the TFT is completed. The single common passivation layer is then deposited over both the TFT and the photosensor island.
摘要翻译： 辐射成像仪包括具有多个可独立寻址的像素的光电传感器阵列，每个像素具有光电传感器岛和相关联的薄膜晶体管（TFT），用于选择性地将光电传感器岛电耦合到预定的地址线。 在每个像素中，单个公共钝化层设置在TFT和光电传感器岛上，使得钝化层与TFT的外表面和光电传感器岛的两个部分相邻。 在如上所述的制造光电传感器阵列的方法中，在源极 - 漏极金属层沉积之后，该层被保持未图案化，直到形成光电传感器岛为止。 在光电传感器岛的形成中，源极 - 漏极金属层用作蚀刻停止以保护TFT。 在形成光电传感器岛之后，对源极 - 漏极金属层进行图案化以形成源极和漏极并完成TFT的制造。 然后将单个公共钝化层沉积在TFT和光电传感器岛上。
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公开(公告)号：US5517031A
公开(公告)日：1996-05-14
申请号：US264097
申请日：1994-06-21
IPC分类号： H01L27/146 , G01T1/24
CPC分类号： H01L27/14625 , H01L27/14609 , H01L27/14623
摘要： A solid state radiation imager includes a photosensor array having a plurality of pixels disposed on a substrate, each pixel having a respective photosensor coupled to a thin film transistor (TFT). The photosensor array further includes an opaque passivation layer that is disposed over non-photodiode areas of the photosensor array, including the TFT and address lines in the array. The opaque passivation layer has an absorbance that is greater than 1, and typically that is greater than 2. The opaque passivation layer further is typically made of a thermally stable polymer mixed with a light absorbing material such as an organic dye (e.g., Sudan Black B), carbon black, or graphite.
摘要翻译： 固态放射线成像器包括具有设置在基板上的多个像素的光电传感器阵列，每个像素具有耦合到薄膜晶体管（TFT）的各自的光电传感器。 光电传感器阵列还包括不透明钝化层，其设置在光电传感器阵列的非光电二极管区域上，包括阵列中的TFT和地址线。 不透明钝化层的吸光度大于1，通常大于2.不透明钝化层通常由与光吸收材料（例如有机染料（例如，苏丹黑））混合的热稳定聚合物制成 B），炭黑或石墨。
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3.发明授权Radiation imager with common passivation dielectric for gate electrode and photosensor 失效具有公共钝化电介质的辐射成像仪用于栅电极和光电传感器
公开(公告)号：US5435608A
公开(公告)日：1995-07-25
申请号：US261592
申请日：1994-06-17
IPC分类号： H01L27/146 , H01L27/14 , H01L31/00
CPC分类号： H01L27/14643 , Y10S438/958
摘要： A solid state radiation imager pixel having a thin film transistor (TFT) coupled to a photodiode in which the photodiode and the TFT each comprise a common dielectric layer, that is, a single dielectric layer that extends across the pixel and that has a gate dielectric layer portion and a photodiode body passivation portion. The common dielectric layer comprises a monolithic dielectric material such as silicon nitride or silicon oxide. Further, the bottom electrode of the photosensor body and the gate electrode are each disposed on a common surface of the substrate and comprise the same conductive material, the conductive material having been deposited on the pixel in the same deposition process. The source and drain electrodes and the common contact electrode for the photodiode each comprises the same source/drain metal conductive material, the conductive material having been deposited on the pixel in the same deposition process.
摘要翻译： 具有耦合到光电二极管的薄膜晶体管（TFT）的固态辐射成像器像素，其中光电二极管和TFT各自包括公共介电层，即，跨越像素延伸并具有栅极电介质的单个电介质层 层部分和光电二极管主体钝化部分。 公共介电层包括诸如氮化硅或氧化硅的单片电介质材料。 此外，光电传感器主体的底部电极和栅极电极分别设置在基板的公共表面上并且包括相同的导电材料，导电材料已经在相同的沉积工艺中沉积在像素上。 用于光电二极管的源电极和漏电极和公共接触电极每个包括相同的源极/漏极金属导电材料，导电材料已经以相同的沉积工艺沉积在像素上。
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4.发明授权Method of fabricating radiation imager with single passivation dielectric for transistor and diode 失效用于晶体管和二极管制造单个钝化电介质的辐射成像仪的方法
公开(公告)号：US5516712A
公开(公告)日：1996-05-14
申请号：US330955
申请日：1994-10-28
IPC分类号： H01L21/77 , H01L21/84 , H01L27/12 , H01L27/146 , H01L27/15 , H01L29/786 , H01L31/10
CPC分类号： H01L27/14643 , H01L27/1214
摘要： A radiation imager includes a photosensor array having a plurality of individually addressable pixels, each pixel having a photosensor island and an associated thin film transistor (TFT) disposed to selectively electrically couple the photosensor island to a predetermined address line. In each pixel a single common passivation layer is disposed over the TFT and the photosensor island such that the passivation layer is adjacent to both the outer surfaces of the TFT and portions of the photosensor island. In a method of fabricating a photosensor array as described above, after depositon of a source-drain metal layer, the layer is left unpatterned until after the photosensor island has been formed. In the formation of the photosensor island the source-drain metal layer serves as an etch stop to protect the TFT. Following formation of the photosensor island, the source-drain metal layer is patterned to form source and drain electrodes and fabrication of the TFT is completed. The single common passivation layer is then deposited over both the TFT and the photosensor island.
摘要翻译： 辐射成像仪包括具有多个可独立寻址的像素的光电传感器阵列，每个像素具有光电传感器岛和相关联的薄膜晶体管（TFT），用于选择性地将光电传感器岛电耦合到预定的地址线。 在每个像素中，单个公共钝化层设置在TFT和光电传感器岛上，使得钝化层与TFT的外表面和光电传感器岛的两个部分相邻。 在如上所述的制造光电传感器阵列的方法中，在源极 - 漏极金属层沉积之后，该层被保持未图案化，直到形成光电传感器岛为止。 在光电传感器岛的形成中，源极 - 漏极金属层用作蚀刻停止以保护TFT。 在形成光电传感器岛之后，对源极 - 漏极金属层进行图案化以形成源极和漏极并完成TFT的制造。 然后将单个公共钝化层沉积在TFT和光电传感器岛上。
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公开(公告)号：US5303282A
公开(公告)日：1994-04-12
申请号：US31450
申请日：1993-03-15
申请人： Robert F. Kwasnick , Ching-Yeu Wei
发明人： Robert F. Kwasnick , Ching-Yeu Wei
IPC分类号： G21K1/02
CPC分类号： G21K1/02
摘要： A collimator for use in an imaging system with a radiation point source has a plurality of channels formed therein along longitudinal axes aligned with selected orientation angles that correspond to the direct beam path from the radiation source to the radiation detectors. The collimator comprises a photosensitive material coated with a radiation absorbent material. The cross-sectional shape of the channels corresponds to the cross-sectional shape of the radiation detecting area of the detector element adjoining the channel, and the sidewalls of the channel are smooth along their length. The collimator may be fabricated by forming a mask on a photosensitive collimator substrate, exposing the photosensitive substrate to light beams traveling along a path corresponding to a direct path of radiation from the radiation source to the detector elements in the assembled array, etching the collimator substrate to form channels therein along the exposed area of the substrate, and coating the substrate with a radiation absorbent material.
摘要翻译： 用于具有辐射点源的成像系统中的准直器具有沿着与从与辐射源到辐射探测器的直接光束路径相对应的所选定向角度的纵向轴线形成的多个通道。 准直器包括涂覆有辐射吸收材料的感光材料。 通道的横截面形状对应于邻近通道的检测器元件的辐射检测区域的横截面形状，并且通道的侧壁沿其长度是平滑的。 可以通过在光敏准直器基板上形成掩模来制造准直器，将感光基板暴露于沿着对应于辐射源的辐射源的直接路径到组装阵列中的检测器元件的路径传播的光束，蚀刻准直器基板 沿着衬底的暴露区域形成通道，并用辐射吸收材料涂覆衬底。
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6.发明授权
公开(公告)号：US5340758A
公开(公告)日：1994-08-23
申请号：US938562
申请日：1992-08-28
IPC分类号： H01L29/40 , H01L21/28 , H01L21/336 , H01L29/423 , H01L29/78 , H01L29/786
CPC分类号： H01L29/66765 , H01L21/28008 , H01L29/42384 , H01L29/78669
摘要： A self-aligned, inverted, thin film field effect transistor is produced by patterning the gate electrode to have tapered edges followed by conformal deposition of subsequent layers of the device structure up through a support layer followed by deposition of a subordinate layer such as the source/drain metallization) on the support layer. The subordinate layer itself may be a planarization or non-conformal layer or may have a subsequent non-conformal planarization layer disposed thereon. Thereafter, the structure is non-selectively etched (preferably reactive ion etched) until the support layer is exposed by the creation of an aperture in the subordinate layer in alignment with raised portions of the reference layer while leaving the subordinate layer present on other parts of the structure. Thereafter, the remainder of the device is fabricated with the source and drain electrodes self-aligned with respect to the gate conductor using a selective etch method.
摘要翻译： 通过对栅电极进行图案化以产生渐缩边缘，随后将器件结构的后续层向上保持沉积通过支撑层，随后沉积下层（例如源极）而产生自对准反转的薄膜场效应晶体管 /漏极金属化）。 下层本身可以是平面化或非保形层，或者可以具有设置在其上的随后的非保形平面化层。 此后，结构被非选择性蚀刻（优选为反应离子蚀刻），直到支撑层通过在下位层中形成与参考层的凸起部分对准的孔而暴露，同时使下层存在于其它部分 结构。 此后，使用选择性蚀刻方法，使源极和漏极相对于栅极导体自对准制造器件的其余部分。
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公开(公告)号：US5293417A
公开(公告)日：1994-03-08
申请号：US30909
申请日：1993-03-15
IPC分类号： G21K1/02
CPC分类号： G21K1/025
摘要： A collimator for use in an imaging system with a radiation point source is formed from a plurality of collimator plates stacked together. Passages in each collimator plate in conjunction with the respective passages in adjoining plates form a plurality of channels through the collimator. The channel longitudinal axes are aligned with selected orientation angles that correspond to the direct beam path from the radiation source to the radiation detectors. The collimator plates are made up of patterned sheets of radiation absorbent material or alternatively comprise patterned photosensitive material substrates coated with a radiation absorbent material. The cross-sectional shape of each channel corresponds to the cross-sectional shape of the radiation detecting area of the detector element adjoining the channel. A method of forming a collimator includes the steps of selectively removing material from the collimator plates to form the passages therein, and stacking the patterned collimator plates together to align them so that the respective adjacent passages form a channel aligned with respective selected orientation angles corresponding to direct paths of radiation from the radiation source to the detector elements in the assembled array.
摘要翻译： 用于具有辐射点源的成像系统中的准直器由堆叠在一起的多个准直器板形成。 每个准直板中的通道与相邻板中的相应通道结合形成通过准直器的多个通道。 通道纵向轴线对应于对应于从辐射源到辐射探测器的直接光束路径的选定取向角度。 准直板由图案化的辐射吸收材料片构成，或者包括涂覆有辐射吸收材料的图案化感光材料基底。 每个通道的横截面形状对应于邻近通道的检测器元件的辐射检测区域的横截面形状。 一种形成准直器的方法包括以下步骤：选择性地从准直板移除材料以在其中形成通道，并且将图案化的准直器板堆叠在一起以对准它们，使得相应的相邻通道形成与各自选定的取向角对应的通道 从辐射源到组装阵列中的检测器元件的直接辐射路径。
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8.发明授权Method of fabricating solid state radiation imager with high integrity barrier layer 失效制造具有高完整性阻挡层的固体辐射成像仪的方法
公开(公告)号：US5585280A
公开(公告)日：1996-12-17
申请号：US459223
申请日：1995-06-02
IPC分类号： G01J1/02 , G01T1/20 , H01L27/146 , H01L31/0216 , H01L31/0232 , H01L31/105 , H01L31/055
CPC分类号： H01L31/0216 , H01L31/02322 , H01L31/1055
摘要： A radiation imager includes a photosensor barrier layer disposed between an amorphous silicon photosensor array and the scintillator. The barrier layer includes two strata, the first stratum being silicon oxide disposed over the upper conductive layer of the photosensor array and the second stratum is silicon nitride that is disposed over the first stratum. The photosensor barrier layer has a shape that substantially conforms to the the shape of the underlying upper conductive layer and has a maximum thickness of about 3 microns. The silicon oxide and silicon nitride are deposited in a vapor deposition process at less than about 250.degree. C. using tetraethoxysilane (TEOS) as the silicon source gas.
摘要翻译： 辐射成像仪包括设置在非晶硅光电传感器阵列和闪烁体之间的光电传感器阻挡层。 阻挡层包括两层，第一层是设置在光传感器阵列的上导电层上的氧化硅，第二层是设置在第一层上的氮化硅。 光电传感器阻挡层具有基本上符合下面的上导电层的形状并具有约3微米的最大厚度的形状。 使用四乙氧基硅烷（TEOS）作为硅源气体，在小于约250℃的气相沉积工艺中沉积氧化硅和氮化硅。
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公开(公告)号：US5318664A
公开(公告)日：1994-06-07
申请号：US791715
申请日：1991-11-14
CPC分类号： H01L31/1884 , C04B41/5346 , C04B41/91 , Y02E10/50
摘要： Indium-tin oxide is selective etched relative to silicon, molybdenum, aluminum, titanium, silicon oxide and silicon nitride using an organic radical and oxygen containing plasma which contains sufficient oxygen to prevent deposition of undesirable films on non-etching portions of the component being etched and on the reactor surfaces. The plasma lacks halogenated gases. A minimum differential etch rate of 8:1 of indium-tin oxide to silicon results with the other materials etching slower than silicon or not at all.
摘要翻译： 使用含有足够氧的有机基团和含氧等离子体，相对于硅，钼，铝，钛，氧化硅和氮化硅选择性地蚀刻氧化铟锡，以防止在被蚀刻的组分的非蚀刻部分上沉积不期望的膜 并在反应器表面上。 等离子体缺乏卤化气体。 铟锡氧化物与硅的最小差分蚀刻速率为8：1，其他材料的蚀刻比硅慢，或根本不蚀刻。
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公开(公告)号：US5552607A
公开(公告)日：1996-09-03
申请号：US493021
申请日：1995-06-21
IPC分类号： H01L23/528 , H01L27/146 , H04N5/30 , H01L25/00 , H01L27/10 , H01L27/13
CPC分类号： H01L27/146 , H01L23/528 , H01L2924/0002 , Y10S257/913
摘要： An imager array data line repair structure for use in high performance imager arrays includes a first and a second plurality of address lines that are disposed in respective layers with an intermediate layer having at least one insulative material disposed therebetween. The imager device further includes at least one integral address line repair segment that is disposed in the same layer as the first address lines and that is electrically isolated from the first address lines; the integral address line repair segment is disposed so as to underlie a repair portion of the second address line, with the intermediate layer disposed therebetween, and has a width substantially the same as the overlying second address line. In initial fabrication, the integral address line repair segment is electrically isolated from the overlying repair segment of the second address line; in the event a repair has been effected, the repair portion of the second address line is electrically coupled to the underlying integral address line repair segment through laser welds.
摘要翻译： 用于高性能成像器阵列的成像器阵列数据线修复结构包括设置在各层中的第一和第二多个地址线，中间层具有设置在其间的至少一个绝缘材料。 成像装置还包括至少一个整体地址线修复段，其被布置在与第一地址线相同的层中，并且与第一地址线电隔离; 整体地址线修复段被设置为位于第二地址线的修复部分的下面，其间设置有中间层，并且具有与覆盖的第二地址线基本相同的宽度。 在初始制造中，整体地址线修复段与第二地址线的上覆修复段电隔离; 在修理已经实现的情况下，第二地址线的修复部分通过激光焊接电连接到下面的整体地址线修复段。
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