摘要:
In a thermoelectric conversion device, support substrates (13, 14), electrodes (11, 12) formed on the support substrates and thermoelectric conversion parts (7, 10) formed on the electrodes and containing semiconductor glass are disposed. The semiconductor glass is non-lead glass containing vanadium, and the electrodes contain any of Al, Ti, Ti nitride, W, W nitride, W silicide, Ta, Cr and Si.This constitution makes it possible to provide a device structure which can be produced by an inexpensive production process, uses a composite material with an excellent thermoelectric conversion characteristic and can solve the characteristic problem of the composite material. As a result, it is possible to provide a thermoelectric conversion device with excellent characteristics and high reliability at a low cost.
摘要:
A thermal-type fluid flow sensor is provided to measure an air flow rate flowing through an air intake passage. The thermal-type fluid flow sensor includes a heating resistive element; a first temperature-measuring resistive element for detecting a temperature of the heating resistive element; a second temperature-measuring resistive element for detecting the temperature of air on an upstream side of air heated by the heating resistive element; a third temperature-measuring resistive element for detecting the temperature of air on a downstream side of air heated by the heating resistive element, and a fourth temperature-measuring resistive element for detecting the temperature of air, wherein the heating resistive element and the first, second, third and fourth temperature-measuring resistive elements are formed on a substrate, the heating resistive element is disposed in an upper layer or a lower layer of the first temperature-measuring resistive element, and a resistance ratio of materials of the heating resistive element is larger than a resistance ratio of materials of the first temperature-measuring resistive element.
摘要:
A thermal-type fluid flow sensor technology for measuring more precisely the temperature of the heater for an improved sensibility of detecting flow measurements. The thermal-type fluid flow sensor for measuring the air flow rate includes a heating resistive element formed on the semiconductor substrate through a first insulating layer, temperature-measuring resistive elements for heating resistive element for measuring the temperature of the heating resistive element, upstream and downstream temperature-measuring resistive elements for detecting the temperature of air on the upstream side and the downstream side of the air heated by the heating resistive element, and an air temperature measuring resistive element for measuring the temperature of the air heated by the heating resistive element, and at least the temperature-measuring resistive element for the heating resistive element is disposed in the upper layer or lower layer of the heating resistive element.
摘要:
Described is a polishing technique adapted for multilevel metallization of an electronic circuit device, which comprises polishing a metal film with a polishing liquid containing an oxidizing substance, a phosphoric acid and a protection-layer forming agent. The present invention makes it possible to polishing a metal film at a high removal rate while suppressing occurrence of scratches, delamination, dishing or erosion.
摘要:
The present invention provides a technique to reduce and suppress scratches and delamination, to suppress and control the development of dishing and erosion, and to polish at high polishing rate. Polishing is performed using a polishing solution, which contains an oxidizer, phosphoric acid, organic acid, a chemical to form inhibition layer, and water.
摘要:
A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items, such as slurries and polishing pads, is reduced. A metal film formed on an insulating film having a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.
摘要:
The apparatus and method for producing a substrate whose surface includes a metallic wire by polishing the substrate surface. A polishing liquid is supplied to a clearance between the substrate and the surface of a polishing pad. The polishing liquid includes an acid which dissolves the oxidized part of the substrate surface and is substantially free of solid abrasive powder. A relative movement is generated between the substrate surface and the polishing pad surface while the substrate surface is pressed against the polishing pad surface while the polishing liquid is supplied so that the dissolved oxidized part of the substrates surface can be removed from the substrate.
摘要:
A reaction-preventing film is provided between a capacitor insulating film made of a material having a high dielectric constant, such as Ta.sub.2 O.sub.5, and an upper electrode in order to prevent a reaction of the upper electrode with the capacitor insulating film. This effectively prevents the reaction between the upper electrode and the capacitor caused by a heat treatment conducted after formation of the capacitor, and hence prevents an increase in leakage current caused by the reaction. Thus, the reliability of a semiconductor device is remarkably increased.
摘要翻译:为了防止上部电极与电容绝缘膜的反应,在由具有高介电常数的材料制成的电容器绝缘膜(例如Ta 2 O 5)和上部电极之间设置防反射膜。 这有效地防止了在形成电容器之后进行的热处理引起的上部电极和电容器之间的反应,从而防止了由反应引起的漏电流的增加。 因此,半导体器件的可靠性显着增加。
摘要:
A semiconductor memory device is provided such as the type having flip-flop memory cells each including two bipolar transistors in cross connection with each other. In certain embodiments, at least a part of a Schottky barrier diode or capacitor in the memory cell is formed under a digit line. This memory device is greatly reduced in its required area, and the Schottky barrier diode and capacitor are negligibly influenced by the digit line. In other embodiments, it is arranged to provide different electrodes for the Schottky barrier diode and the capacitor to optimize construction in a minimized space.
摘要:
In a thermal sensor with a detection part and a circuit part formed on the same substrate, an insulating film for protection of the circuit part causes problems of lowering in sensitivity of a heater, deterioration in accuracy due to variation of a residual stress in the detection part, etc. A layered film including insulating films is formed on a heating resistor, an intermediate layer is formed thereon, and a layered film including insulating films is formed further thereon. The intermediate layer is specified to be a layer made up of any one of aluminum nitride, aluminum oxide, silicon carbide, titanium nitride, tungsten nitride, and titanium tungsten. This configuration enables the layered film on the upper part of the detection part to be removed using the intermediate layer as an etch stop layer, which solves problems of lowering in sensitivity, a variation in residual stress, etc. resulting from these.