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公开(公告)号：US20090309113A1
公开(公告)日：2009-12-17
申请号：US12298703
申请日：2007-04-25
IPC分类号： H01L33/00
CPC分类号： H01L33/465 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： An optoelectronic semiconductor component, comprising a carrier substrate, and an interlayer that mediates adhesion between the carrier substrate and a component structure. The component structure comprises an active layer provided for generating radiation, and a useful layer arranged between the interlayer and the active layer. The useful layer has a separating area remote from the carrier substrate.
摘要翻译： 一种光电子半导体部件，包括载体基板和中间层，其介导载体基板和部件结构之间的粘附。 组件结构包括用于产生辐射的有源层和布置在中间层和有源层之间的有用层。 有用层具有远离载体基底的分离区域。
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公开(公告)号：US08093607B2
公开(公告)日：2012-01-10
申请号：US12298703
申请日：2007-04-25
IPC分类号： H01L33/42
CPC分类号： H01L33/465 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： An optoelectronic semiconductor component, comprising a carrier substrate, and an interlayer that mediates adhesion between the carrier substrate and a component structure. The component structure comprises an active layer provided for generating radiation, and a useful layer arranged between the interlayer and the active layer. The useful layer has a separating area remote from the carrier substrate.
摘要翻译： 一种光电子半导体部件，包括载体基板和中间层，其介导载体基板和部件结构之间的粘附。 组件结构包括用于产生辐射的有源层和布置在中间层和有源层之间的有用层。 有用层具有远离载体基底的分离区域。
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公开(公告)号：US08526476B2
公开(公告)日：2013-09-03
申请号：US12598747
申请日：2008-04-24
IPC分类号： H01S5/00
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/387 , H01L33/46 , H01L2924/0002 , H01L2933/0016 , H01S5/0217 , H01S5/0224 , H01S5/0425 , H01S5/105 , H01S5/18308 , H01S5/18347 , H01S5/1835 , H01S5/18369 , H01S5/18391 , H01S5/3095 , H01L2924/00
摘要： A semiconductor chip with a semiconductor body has a semiconductor layer sequence with an active region provided for generating radiation. A mirror structure that includes a mirror layer and a dielectric layer that is arranged at least in regions between the mirror layer and semiconductor body is arranged on the semiconductor body.
摘要翻译： 具有半导体本体的半导体芯片具有提供用于产生辐射的有源区的半导体层序列。 至少在镜面层和半导体本体之间的区域中配置有镜面层和电介质层的镜面结构配置在半导体本体上。
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公开(公告)号：US08268659B2
公开(公告)日：2012-09-18
申请号：US13011326
申请日：2011-01-21
IPC分类号： H01L21/00
CPC分类号： H01S5/0217 , H01S5/0216 , H01S5/2214 , H01S5/2232 , H01S5/3211 , H01S5/32341 , H01S2301/173
摘要： A method for manufacturing an edge emitting semiconductor laser chip, which has a carrier substrate, an interlayer arranged between the carrier substrate and a component structure of the edge emitting semiconductor laser chip. The interlayer is adapted to provide adhesion between the carrier substrate and the component structure. The component structure has an active zone provided for generating radiation.
摘要翻译： 一种用于制造边缘发射半导体激光器芯片的方法，其具有载体衬底，布置在载体衬底和边缘发射半导体激光器芯片的部件结构之间的层间隔。 中间层适于提供载体基底和部件结构之间的粘附。 组件结构具有用于产生辐射的活动区域。
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5.发明申请Method for Laterally Cutting Through a Semiconductor Wafer and Optoelectronic Component 有权用于横向切割半导体晶片和光电元件的方法公开(公告)号：US20090290610A1
公开(公告)日：2009-11-26
申请号：US11991488
申请日：2006-08-07
申请人： Christoph Eichler , Volker Härle
发明人： Christoph Eichler , Volker Härle
CPC分类号： H01S5/0201 , H01L33/0079 , H01L33/16 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： A method for laterally dividing a semiconductor wafer (1) comprises the method steps of: providing a growth substrate (2); epitaxially growing a semiconductor layer sequence (3), which comprises a functional semiconductor layer (5), onto the growth substrate (2); applying a mask layer (10) to partial regions of the semiconductor layer sequence (3) in order to produce masked regions (11) and unmasked regions (12); implanting ions through the unmasked regions (12) in order to produce implantation regions (13) in the semiconductor wafer (1); and dividing the semiconductor wafer (1) along the implantation regions (13), wherein the growth substrate (2) or at least one part of the growth substrate (2) is separated from the semiconductor wafer.
摘要翻译： 一种用于横向分割半导体晶片（1）的方法包括以下方法步骤：提供生长衬底（2）; 在生长衬底（2）上外延生长包括功能半导体层（5）的半导体层序列（3）; 将掩模层（10）施加到所述半导体层序列（3）的部分区域以产生掩蔽区域（11）和未屏蔽区域（12）; 通过未掩模区域（12）注入离子，以便在半导体晶片（1）中产生注入区域（13）; 以及沿着所述注入区域（13）划分所述半导体晶片（1），其中所述生长衬底（2）或所述生长衬底（2）的至少一部分与所述半导体晶片分离。
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公开(公告)号：US07885306B2
公开(公告)日：2011-02-08
申请号：US11824877
申请日：2007-07-02
IPC分类号： H01S5/00
CPC分类号： H01S5/0217 , H01S5/0216 , H01S5/2214 , H01S5/2232 , H01S5/3211 , H01S5/32341 , H01S2301/173
摘要： What is specified is an edge emitting semiconductor laser chip comprising a carrier substrate (1), an interlayer (2) promoting adhesion between the carrier substrate (1) and a component structure (50) of the edge emitting semiconductor laser chip, and the component structure (50) comprising an active zone (5) provided for generating radiation.
摘要翻译： 指定的是边缘发射半导体激光器芯片，其包括载体衬底（1），促进载体衬底（1）和边缘发射半导体激光器芯片的部件结构（50）之间的粘合的中间层（2） 结构（50）包括用于产生辐射的活动区（5）。
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公开(公告)号：US08908733B2
公开(公告)日：2014-12-09
申请号：US13262583
申请日：2010-03-10
申请人： Adrian Avramescu , Désirée Queren , Christoph Eichler , Matthias Sabathil , Stephan Lutgen , Uwe Strauss
发明人： Adrian Avramescu , Désirée Queren , Christoph Eichler , Matthias Sabathil , Stephan Lutgen , Uwe Strauss
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01L2924/0002 , H01S5/3407 , H01S5/3425 , H01S5/34333 , H01S2301/173 , Y10S977/95 , Y10S977/951 , H01L2924/00
摘要： In at least one embodiment of the optoelectronic semiconductor chip (1), the latter is based on a nitride material system and comprises at least one active quantum well (2). The at least one active quantum well (2) is designed to generate electromagnetic radiation when in operation. Furthermore, the at least one active quantum well (2) comprises N successive zones (A) in a direction parallel to a growth direction z of the semiconductor chip (1), N being a natural number greater than or equal to 2. At least two of the zones (A) of the active quantum well (2) have mutually different average indium contents c. Furthermore the at least one active quantum well (2) fulfills the condition: 40≦∫c(z)dz−2.5N−1.5∫dz≦80.
摘要翻译： 在光电子半导体芯片（1）的至少一个实施例中，后者基于氮化物材料系统并且包括至少一个有源量子阱（2）。 至少一个有源量子阱（2）被设计成在操作时产生电磁辐射。 此外，至少一个有源量子阱（2）在平行于半导体芯片（1）的生长方向z的方向上包括N个连续区域（A），N是大于或等于2的自然数。至少 有源量子阱（2）的两个区域（A）具有相互不同的平均铟含量c。 此外，至少一个有源量子阱（2）满足条件：40＆nlE;∫c（z）dz-2.5N-1.5∫dz＆nlE; 80。
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公开(公告)号：US08406265B2
公开(公告)日：2013-03-26
申请号：US12679892
申请日：2008-08-29
CPC分类号： H01S5/041 , B82Y20/00 , H01S5/026 , H01S5/34 , H01S5/4043
摘要： An optoelectronic component (1) is specified, comprising a semiconductor body (2) with a semiconductor layer sequence. The semiconductor layer sequence of the semiconductor body (2) comprises a pump region (3) provided for generating a pump radiation and an emission region (4) provided for generating an emission radiation. The emission region (4) and the pump region (3) are arranged one above the other. The pump radiation optically pumps the emission region (4) during operation of the optoelectronic component (1). The emission radiation emerges from the semiconductor body (2) with the semiconductor layer sequence in a lateral direction during operation of the optoelectronic component (1).
摘要翻译： 规定了光电子部件（1），其包括具有半导体层序列的半导体本体（2）。 半导体本体（2）的半导体层序列包括用于产生泵浦辐射的泵浦区域（3）和用于产生发射辐射的发射区域（4）。 发射区域（4）和泵浦区域（3）彼此上下排列。 在光电子部件（1）的操作期间，泵浦辐射光学泵浦发射区域（4）。 在光电子部件（1）的操作期间，发射辐射从半导体本体（2）出射，半导体层序列沿横向方向。
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公开(公告)号：US20100296538A1
公开(公告)日：2010-11-25
申请号：US12679892
申请日：2008-08-29
IPC分类号： H01S5/343
CPC分类号： H01S5/041 , B82Y20/00 , H01S5/026 , H01S5/34 , H01S5/4043
摘要： An optoelectronic component (1) is specified, comprising a semiconductor body (2) with a semiconductor layer sequence. The semiconductor layer sequence of the semiconductor body (2) comprises a pump region (3) provided for generating a pump radiation and an emission region (4) provided for generating an emission radiation. The emission region (4) and the pump region (3) are arranged one above the other. The pump radiation optically pumps the emission region (4) during operation of the optoelectronic component (1). The emission radiation emerges from the semiconductor body (2) with the semiconductor layer sequence in a lateral direction during operation of the optoelectronic component (1).
摘要翻译： 规定了光电子部件（1），其包括具有半导体层序列的半导体本体（2）。 半导体本体（2）的半导体层序列包括用于产生泵浦辐射的泵浦区域（3）和用于产生发射辐射的发射区域（4）。 发射区域（4）和泵浦区域（3）彼此上下排列。 在光电子部件（1）的操作期间，泵浦辐射光学泵浦发射区域（4）。 在光电子部件（1）的操作期间，发射辐射从半导体本体（2）出射，半导体层序列沿横向方向。
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10.发明授权Method for laterally cutting through a semiconductor wafer and optoelectronic component 有权用于横向切割半导体晶片和光电子部件的方法公开(公告)号：US07943484B2
公开(公告)日：2011-05-17
申请号：US11991488
申请日：2006-08-07
申请人： Christoph Eichler , Volker Härle
发明人： Christoph Eichler , Volker Härle
IPC分类号： H01L21/30
CPC分类号： H01S5/0201 , H01L33/0079 , H01L33/16 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： A method for laterally dividing a semiconductor wafer (1) comprises the method steps of: providing a growth substrate (2); epitaxially growing a semiconductor layer sequence (3), which comprises a functional semiconductor layer (5), onto the growth substrate (2); applying a mask layer (10) to partial regions of the semiconductor layer sequence (3) in order to produce masked regions (11) and unmasked regions (12); implanting ions through the unmasked regions (12) in order to produce implantation regions (13) in the semiconductor wafer (1); and dividing the semiconductor wafer (1) along the implantation regions (13), wherein the growth substrate (2) or at least one part of the growth substrate (2) is separated from the semiconductor wafer.
摘要翻译： 一种用于横向分割半导体晶片（1）的方法包括以下方法步骤：提供生长衬底（2）; 在生长衬底（2）上外延生长包括功能半导体层（5）的半导体层序列（3）; 将掩模层（10）施加到所述半导体层序列（3）的部分区域以产生掩蔽区域（11）和未屏蔽区域（12）; 通过未掩模区域（12）注入离子，以便在半导体晶片（1）中产生注入区域（13）; 以及沿着所述注入区域（13）划分所述半导体晶片（1），其中所述生长衬底（2）或所述生长衬底（2）的至少一部分与所述半导体晶片分离。
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