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公开(公告)号：US20100296538A1
公开(公告)日：2010-11-25
申请号：US12679892
申请日：2008-08-29
IPC分类号： H01S5/343
CPC分类号： H01S5/041 , B82Y20/00 , H01S5/026 , H01S5/34 , H01S5/4043
摘要： An optoelectronic component (1) is specified, comprising a semiconductor body (2) with a semiconductor layer sequence. The semiconductor layer sequence of the semiconductor body (2) comprises a pump region (3) provided for generating a pump radiation and an emission region (4) provided for generating an emission radiation. The emission region (4) and the pump region (3) are arranged one above the other. The pump radiation optically pumps the emission region (4) during operation of the optoelectronic component (1). The emission radiation emerges from the semiconductor body (2) with the semiconductor layer sequence in a lateral direction during operation of the optoelectronic component (1).
摘要翻译： 规定了光电子部件（1），其包括具有半导体层序列的半导体本体（2）。 半导体本体（2）的半导体层序列包括用于产生泵浦辐射的泵浦区域（3）和用于产生发射辐射的发射区域（4）。 发射区域（4）和泵浦区域（3）彼此上下排列。 在光电子部件（1）的操作期间，泵浦辐射光学泵浦发射区域（4）。 在光电子部件（1）的操作期间，发射辐射从半导体本体（2）出射，半导体层序列沿横向方向。
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公开(公告)号：US08406265B2
公开(公告)日：2013-03-26
申请号：US12679892
申请日：2008-08-29
CPC分类号： H01S5/041 , B82Y20/00 , H01S5/026 , H01S5/34 , H01S5/4043
摘要： An optoelectronic component (1) is specified, comprising a semiconductor body (2) with a semiconductor layer sequence. The semiconductor layer sequence of the semiconductor body (2) comprises a pump region (3) provided for generating a pump radiation and an emission region (4) provided for generating an emission radiation. The emission region (4) and the pump region (3) are arranged one above the other. The pump radiation optically pumps the emission region (4) during operation of the optoelectronic component (1). The emission radiation emerges from the semiconductor body (2) with the semiconductor layer sequence in a lateral direction during operation of the optoelectronic component (1).
摘要翻译： 规定了光电子部件（1），其包括具有半导体层序列的半导体本体（2）。 半导体本体（2）的半导体层序列包括用于产生泵浦辐射的泵浦区域（3）和用于产生发射辐射的发射区域（4）。 发射区域（4）和泵浦区域（3）彼此上下排列。 在光电子部件（1）的操作期间，泵浦辐射光学泵浦发射区域（4）。 在光电子部件（1）的操作期间，发射辐射从半导体本体（2）出射，半导体层序列沿横向方向。
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公开(公告)号：US08526476B2
公开(公告)日：2013-09-03
申请号：US12598747
申请日：2008-04-24
IPC分类号： H01S5/00
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/387 , H01L33/46 , H01L2924/0002 , H01L2933/0016 , H01S5/0217 , H01S5/0224 , H01S5/0425 , H01S5/105 , H01S5/18308 , H01S5/18347 , H01S5/1835 , H01S5/18369 , H01S5/18391 , H01S5/3095 , H01L2924/00
摘要： A semiconductor chip with a semiconductor body has a semiconductor layer sequence with an active region provided for generating radiation. A mirror structure that includes a mirror layer and a dielectric layer that is arranged at least in regions between the mirror layer and semiconductor body is arranged on the semiconductor body.
摘要翻译： 具有半导体本体的半导体芯片具有提供用于产生辐射的有源区的半导体层序列。 至少在镜面层和半导体本体之间的区域中配置有镜面层和电介质层的镜面结构配置在半导体本体上。
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公开(公告)号：US08093607B2
公开(公告)日：2012-01-10
申请号：US12298703
申请日：2007-04-25
IPC分类号： H01L33/42
CPC分类号： H01L33/465 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： An optoelectronic semiconductor component, comprising a carrier substrate, and an interlayer that mediates adhesion between the carrier substrate and a component structure. The component structure comprises an active layer provided for generating radiation, and a useful layer arranged between the interlayer and the active layer. The useful layer has a separating area remote from the carrier substrate.
摘要翻译： 一种光电子半导体部件，包括载体基板和中间层，其介导载体基板和部件结构之间的粘附。 组件结构包括用于产生辐射的有源层和布置在中间层和有源层之间的有用层。 有用层具有远离载体基底的分离区域。
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公开(公告)号：US08908733B2
公开(公告)日：2014-12-09
申请号：US13262583
申请日：2010-03-10
申请人： Adrian Avramescu , Désirée Queren , Christoph Eichler , Matthias Sabathil , Stephan Lutgen , Uwe Strauss
发明人： Adrian Avramescu , Désirée Queren , Christoph Eichler , Matthias Sabathil , Stephan Lutgen , Uwe Strauss
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01L2924/0002 , H01S5/3407 , H01S5/3425 , H01S5/34333 , H01S2301/173 , Y10S977/95 , Y10S977/951 , H01L2924/00
摘要： In at least one embodiment of the optoelectronic semiconductor chip (1), the latter is based on a nitride material system and comprises at least one active quantum well (2). The at least one active quantum well (2) is designed to generate electromagnetic radiation when in operation. Furthermore, the at least one active quantum well (2) comprises N successive zones (A) in a direction parallel to a growth direction z of the semiconductor chip (1), N being a natural number greater than or equal to 2. At least two of the zones (A) of the active quantum well (2) have mutually different average indium contents c. Furthermore the at least one active quantum well (2) fulfills the condition: 40≦∫c(z)dz−2.5N−1.5∫dz≦80.
摘要翻译： 在光电子半导体芯片（1）的至少一个实施例中，后者基于氮化物材料系统并且包括至少一个有源量子阱（2）。 至少一个有源量子阱（2）被设计成在操作时产生电磁辐射。 此外，至少一个有源量子阱（2）在平行于半导体芯片（1）的生长方向z的方向上包括N个连续区域（A），N是大于或等于2的自然数。至少 有源量子阱（2）的两个区域（A）具有相互不同的平均铟含量c。 此外，至少一个有源量子阱（2）满足条件：40＆nlE;∫c（z）dz-2.5N-1.5∫dz＆nlE; 80。
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公开(公告)号：US20090309113A1
公开(公告)日：2009-12-17
申请号：US12298703
申请日：2007-04-25
IPC分类号： H01L33/00
CPC分类号： H01L33/465 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： An optoelectronic semiconductor component, comprising a carrier substrate, and an interlayer that mediates adhesion between the carrier substrate and a component structure. The component structure comprises an active layer provided for generating radiation, and a useful layer arranged between the interlayer and the active layer. The useful layer has a separating area remote from the carrier substrate.
摘要翻译： 一种光电子半导体部件，包括载体基板和中间层，其介导载体基板和部件结构之间的粘附。 组件结构包括用于产生辐射的有源层和布置在中间层和有源层之间的有用层。 有用层具有远离载体基底的分离区域。
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公开(公告)号：US20100208763A1
公开(公告)日：2010-08-19
申请号：US12598747
申请日：2008-04-24
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/387 , H01L33/46 , H01L2924/0002 , H01L2933/0016 , H01S5/0217 , H01S5/0224 , H01S5/0425 , H01S5/105 , H01S5/18308 , H01S5/18347 , H01S5/1835 , H01S5/18369 , H01S5/18391 , H01S5/3095 , H01L2924/00
摘要： A semiconductor chip with a semiconductor body has a semiconductor layer sequence with an active region provided for generating radiation. A mirror structure that includes a mirror layer and a dielectric layer that is arranged at least in regions between the mirror layer and semiconductor body is arranged on the semiconductor body.
摘要翻译： 具有半导体本体的半导体芯片具有提供用于产生辐射的有源区的半导体层序列。 至少在镜面层和半导体本体之间的区域中配置有镜面层和电介质层的镜面结构配置在半导体本体上。
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公开(公告)号：US09048631B2
公开(公告)日：2015-06-02
申请号：US14006472
申请日：2012-04-18
申请人： Christoph Eichler , Dimitri Dini , Alfred Lell
发明人： Christoph Eichler , Dimitri Dini , Alfred Lell
IPC分类号： H01S5/22 , H01S5/065 , B82Y20/00 , H01S5/10 , H01S5/223 , H01S5/227 , H01S5/02 , H01S5/028 , H01S5/20 , H01S5/343
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0217 , H01S5/0287 , H01S5/065 , H01S5/101 , H01S5/1014 , H01S5/1017 , H01S5/1064 , H01S5/2022 , H01S5/2031 , H01S5/2059 , H01S5/2215 , H01S5/2218 , H01S5/2219 , H01S5/2222 , H01S5/2231 , H01S5/2275 , H01S5/34326 , H01S5/34333 , H01S2301/166 , H01S2301/176 , H01S2301/185
摘要： A laser light source having a ridge waveguide structure includes a semi-conductor layer sequence having a number of functional layers and an active region that is suitable for generating laser light during operation. At least one of the functional layers is designed as a ridge of the ridge waveguide structure. The semiconductor layer sequence has a mode filter structure that is formed as part of the ridge and/or along a main extension plane of the functional layers next to the ridge and/or perpendicular to the main extension plane of the functional layers below the ridge.
摘要翻译： 具有脊波导结构的激光光源包括具有多个功能层的半导体层序列和适用于在操作期间产生激光的有源区域。 功能层中的至少一个被设计为脊形波导结构的脊。 半导体层序列具有模式滤波器结构，其形成为脊的一部分和/或沿功能层的主延伸平面形成在脊附近和/或垂直于脊下方的功能层的主延伸平面。
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公开(公告)号：US20140217425A1
公开(公告)日：2014-08-07
申请号：US14239935
申请日：2012-07-30
申请人： Fabian Kopp , Alfred Lell , Christoph Eichler , Clemens Vierheilig , Sönke Tautz
发明人： Fabian Kopp , Alfred Lell , Christoph Eichler , Clemens Vierheilig , Sönke Tautz
IPC分类号： G02B6/125
CPC分类号： G02B6/125 , H01L33/0045 , H01S5/0264 , H01S5/1017 , H01S5/1085 , H01S2301/166
摘要： A radiation-emitting semiconductor component includes a semiconductor body. The semiconductor body has a semiconductor layer sequence having an active region provided for generating radiation. The semiconductor component has a waveguide, which is provided for laterally guiding the radiation generated in the active region and which extends between a mirror surface and a coupling-out surface. The waveguide meets the mirror surface perpendicularly and forms an acute angle with a normal to the coupling-out surface.
摘要翻译： 辐射发射半导体部件包括半导体本体。 半导体本体具有具有用于产生辐射的有源区的半导体层序列。 半导体部件具有波导，其被设置用于横向地引导在有源区域中产生的辐射并且在反射镜表面和耦合出表面之间延伸。 波导垂直于镜面，与耦合出面的法线形成锐角。
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公开(公告)号：US20130148683A1
公开(公告)日：2013-06-13
申请号：US13730363
申请日：2008-12-17
申请人： Alfred Lell , Christoph Eichler , Wolfgang Schmid , Soenke Tautz , Wolfgang Reill , Dimitri Dini
发明人： Alfred Lell , Christoph Eichler , Wolfgang Schmid , Soenke Tautz , Wolfgang Reill , Dimitri Dini
CPC分类号： H01S5/1082 , H01S5/0078 , H01S5/028 , H01S5/0282 , H01S5/0286 , H01S5/1017 , H01S5/105 , H01S5/1078 , H01S5/1092 , H01S5/22 , H01S2301/02 , H01S2301/166
摘要： A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).
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