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公开(公告)号：US20090309113A1
公开(公告)日：2009-12-17
申请号：US12298703
申请日：2007-04-25
IPC分类号： H01L33/00
CPC分类号： H01L33/465 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： An optoelectronic semiconductor component, comprising a carrier substrate, and an interlayer that mediates adhesion between the carrier substrate and a component structure. The component structure comprises an active layer provided for generating radiation, and a useful layer arranged between the interlayer and the active layer. The useful layer has a separating area remote from the carrier substrate.
摘要翻译： 一种光电子半导体部件，包括载体基板和中间层，其介导载体基板和部件结构之间的粘附。 组件结构包括用于产生辐射的有源层和布置在中间层和有源层之间的有用层。 有用层具有远离载体基底的分离区域。
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公开(公告)号：US08093607B2
公开(公告)日：2012-01-10
申请号：US12298703
申请日：2007-04-25
IPC分类号： H01L33/42
CPC分类号： H01L33/465 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： An optoelectronic semiconductor component, comprising a carrier substrate, and an interlayer that mediates adhesion between the carrier substrate and a component structure. The component structure comprises an active layer provided for generating radiation, and a useful layer arranged between the interlayer and the active layer. The useful layer has a separating area remote from the carrier substrate.
摘要翻译： 一种光电子半导体部件，包括载体基板和中间层，其介导载体基板和部件结构之间的粘附。 组件结构包括用于产生辐射的有源层和布置在中间层和有源层之间的有用层。 有用层具有远离载体基底的分离区域。
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公开(公告)号：US20120280207A1
公开(公告)日：2012-11-08
申请号：US13546857
申请日：2012-07-11
申请人： Adrian AVRAMESCU , Volker Härle , Lutz Höppel , Matthias Peter , Matthias Sabathil , Uwe Strauss
发明人： Adrian AVRAMESCU , Volker Härle , Lutz Höppel , Matthias Peter , Matthias Sabathil , Uwe Strauss
IPC分类号： H01L33/06
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/2009 , H01S5/3072 , H01S5/3095 , H01S5/3202 , H01S5/3407 , H01L2924/00
摘要： An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and to a method for producing such a semiconductor chip.
摘要翻译： 光电子半导体芯片包括在半导体芯片（20）的生长方向（c）上的以下区域序列：用于有源区域（2）的有源区（2），适合的有源区（2） 用于产生电磁辐射，所述有源区基于六方晶系化合物半导体，以及用于所述有源区（2）的n掺杂阻挡层（3）。 还公开了包括这种半导体芯片的部件，以及制造这种半导体芯片的方法。
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公开(公告)号：US08994000B2
公开(公告)日：2015-03-31
申请号：US13546857
申请日：2012-07-11
申请人： Adrian Avramescu , Volker Härle , Lutz Höppel , Matthias Peter , Matthias Sabathil , Uwe Strauss
发明人： Adrian Avramescu , Volker Härle , Lutz Höppel , Matthias Peter , Matthias Sabathil , Uwe Strauss
IPC分类号： H01L29/06 , H01S5/343 , B82Y20/00 , H01L33/04 , H01S5/042 , H01L33/06 , H01L33/32 , H01S5/20 , H01S5/30 , H01S5/32 , H01S5/34
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/2009 , H01S5/3072 , H01S5/3095 , H01S5/3202 , H01S5/3407 , H01L2924/00
摘要： An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and to a method for producing such a semiconductor chip.
摘要翻译： 光电子半导体芯片包括在半导体芯片（20）的生长方向（c）上的以下区域序列：用于有源区域（2）的有源区（2），适合的有源区（2） 用于产生电磁辐射，所述有源区基于六方晶系化合物半导体，以及用于所述有源区（2）的n掺杂阻挡层（3）。 还公开了包括这种半导体芯片的部件，以及制造这种半导体芯片的方法。
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公开(公告)号：US08526476B2
公开(公告)日：2013-09-03
申请号：US12598747
申请日：2008-04-24
IPC分类号： H01S5/00
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/387 , H01L33/46 , H01L2924/0002 , H01L2933/0016 , H01S5/0217 , H01S5/0224 , H01S5/0425 , H01S5/105 , H01S5/18308 , H01S5/18347 , H01S5/1835 , H01S5/18369 , H01S5/18391 , H01S5/3095 , H01L2924/00
摘要： A semiconductor chip with a semiconductor body has a semiconductor layer sequence with an active region provided for generating radiation. A mirror structure that includes a mirror layer and a dielectric layer that is arranged at least in regions between the mirror layer and semiconductor body is arranged on the semiconductor body.
摘要翻译： 具有半导体本体的半导体芯片具有提供用于产生辐射的有源区的半导体层序列。 至少在镜面层和半导体本体之间的区域中配置有镜面层和电介质层的镜面结构配置在半导体本体上。
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公开(公告)号：US08908733B2
公开(公告)日：2014-12-09
申请号：US13262583
申请日：2010-03-10
申请人： Adrian Avramescu , Désirée Queren , Christoph Eichler , Matthias Sabathil , Stephan Lutgen , Uwe Strauss
发明人： Adrian Avramescu , Désirée Queren , Christoph Eichler , Matthias Sabathil , Stephan Lutgen , Uwe Strauss
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01L2924/0002 , H01S5/3407 , H01S5/3425 , H01S5/34333 , H01S2301/173 , Y10S977/95 , Y10S977/951 , H01L2924/00
摘要： In at least one embodiment of the optoelectronic semiconductor chip (1), the latter is based on a nitride material system and comprises at least one active quantum well (2). The at least one active quantum well (2) is designed to generate electromagnetic radiation when in operation. Furthermore, the at least one active quantum well (2) comprises N successive zones (A) in a direction parallel to a growth direction z of the semiconductor chip (1), N being a natural number greater than or equal to 2. At least two of the zones (A) of the active quantum well (2) have mutually different average indium contents c. Furthermore the at least one active quantum well (2) fulfills the condition: 40≦∫c(z)dz−2.5N−1.5∫dz≦80.
摘要翻译： 在光电子半导体芯片（1）的至少一个实施例中，后者基于氮化物材料系统并且包括至少一个有源量子阱（2）。 至少一个有源量子阱（2）被设计成在操作时产生电磁辐射。 此外，至少一个有源量子阱（2）在平行于半导体芯片（1）的生长方向z的方向上包括N个连续区域（A），N是大于或等于2的自然数。至少 有源量子阱（2）的两个区域（A）具有相互不同的平均铟含量c。 此外，至少一个有源量子阱（2）满足条件：40＆nlE;∫c（z）dz-2.5N-1.5∫dz＆nlE; 80。
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公开(公告)号：US20100296538A1
公开(公告)日：2010-11-25
申请号：US12679892
申请日：2008-08-29
IPC分类号： H01S5/343
CPC分类号： H01S5/041 , B82Y20/00 , H01S5/026 , H01S5/34 , H01S5/4043
摘要： An optoelectronic component (1) is specified, comprising a semiconductor body (2) with a semiconductor layer sequence. The semiconductor layer sequence of the semiconductor body (2) comprises a pump region (3) provided for generating a pump radiation and an emission region (4) provided for generating an emission radiation. The emission region (4) and the pump region (3) are arranged one above the other. The pump radiation optically pumps the emission region (4) during operation of the optoelectronic component (1). The emission radiation emerges from the semiconductor body (2) with the semiconductor layer sequence in a lateral direction during operation of the optoelectronic component (1).
摘要翻译： 规定了光电子部件（1），其包括具有半导体层序列的半导体本体（2）。 半导体本体（2）的半导体层序列包括用于产生泵浦辐射的泵浦区域（3）和用于产生发射辐射的发射区域（4）。 发射区域（4）和泵浦区域（3）彼此上下排列。 在光电子部件（1）的操作期间，泵浦辐射光学泵浦发射区域（4）。 在光电子部件（1）的操作期间，发射辐射从半导体本体（2）出射，半导体层序列沿横向方向。
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公开(公告)号：US08406265B2
公开(公告)日：2013-03-26
申请号：US12679892
申请日：2008-08-29
CPC分类号： H01S5/041 , B82Y20/00 , H01S5/026 , H01S5/34 , H01S5/4043
摘要： An optoelectronic component (1) is specified, comprising a semiconductor body (2) with a semiconductor layer sequence. The semiconductor layer sequence of the semiconductor body (2) comprises a pump region (3) provided for generating a pump radiation and an emission region (4) provided for generating an emission radiation. The emission region (4) and the pump region (3) are arranged one above the other. The pump radiation optically pumps the emission region (4) during operation of the optoelectronic component (1). The emission radiation emerges from the semiconductor body (2) with the semiconductor layer sequence in a lateral direction during operation of the optoelectronic component (1).
摘要翻译： 规定了光电子部件（1），其包括具有半导体层序列的半导体本体（2）。 半导体本体（2）的半导体层序列包括用于产生泵浦辐射的泵浦区域（3）和用于产生发射辐射的发射区域（4）。 发射区域（4）和泵浦区域（3）彼此上下排列。 在光电子部件（1）的操作期间，泵浦辐射光学泵浦发射区域（4）。 在光电子部件（1）的操作期间，发射辐射从半导体本体（2）出射，半导体层序列沿横向方向。
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公开(公告)号：US20100208763A1
公开(公告)日：2010-08-19
申请号：US12598747
申请日：2008-04-24
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/387 , H01L33/46 , H01L2924/0002 , H01L2933/0016 , H01S5/0217 , H01S5/0224 , H01S5/0425 , H01S5/105 , H01S5/18308 , H01S5/18347 , H01S5/1835 , H01S5/18369 , H01S5/18391 , H01S5/3095 , H01L2924/00
摘要： A semiconductor chip with a semiconductor body has a semiconductor layer sequence with an active region provided for generating radiation. A mirror structure that includes a mirror layer and a dielectric layer that is arranged at least in regions between the mirror layer and semiconductor body is arranged on the semiconductor body.
摘要翻译： 具有半导体本体的半导体芯片具有提供用于产生辐射的有源区的半导体层序列。 至少在镜面层和半导体本体之间的区域中配置有镜面层和电介质层的镜面结构配置在半导体本体上。
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公开(公告)号：US09029878B2
公开(公告)日：2015-05-12
申请号：US13522508
申请日：2011-01-17
申请人： Matthias Sabathil , Norwin von Malm , Lutz Hoeppel , Stefan Illek , Bernd Barchmann , Patrick Rode
发明人： Matthias Sabathil , Norwin von Malm , Lutz Hoeppel , Stefan Illek , Bernd Barchmann , Patrick Rode
CPC分类号： H01L25/0753 , H01L33/22 , H01L33/507 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.
摘要翻译： 一种具有前载体，后载体和多个发光二极管芯片的照明装置，其在运行时发光并释放废热，其中后载体至少在前载体上被选定的位置覆盖，发光二极管芯片布置 在后载体和前载体之间形成阵列，发光二极管由后和/或前载体电接触并由后载体和前载体机械固定，前载体热传导耦合到发光二极管芯片，并且包括光输出耦合 面对远离发光二极管芯片的光输出耦合面将发光二极管芯片释放的一部分废热释放到周围环境中，当发光二极管芯片的照明装置为100mW或更小时，每个发光二极管芯片的功率为100mW 具有100 lm / W以上的光收率。
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