利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

44 条记录 (耗时 0.022 秒)

    Reduction of the aspect ratio of deep contact holes for embedded DRAM devices
    2.
    发明授权
    Reduction of the aspect ratio of deep contact holes for embedded DRAM devices 有权
    降低嵌入式DRAM器件深度接触孔的长宽比

    公开(公告)号：US06168984A

    公开(公告)日：2001-01-02

    申请号：US09419103

    申请日：1999-10-15

    申请人： Chue-San Yoo ,  Ming-Hsiung Chiang ,  Wen-Chuan Chiang ,  Cheng-Ming Wu ,  Tse-Liang Ying

    发明人： Chue-San Yoo ,  Ming-Hsiung Chiang ,  Wen-Chuan Chiang ,  Cheng-Ming Wu ,  Tse-Liang Ying

    IPC分类号： H01L218242

    CPC分类号： H01L27/10888 ,  H01L27/10814 ,  H01L27/10894 ,  H01L28/84 ,  H01L28/91

    摘要： A process for reducing the aspect ratio, for narrow diameter contact holes, formed in thick insulator layers, used to integrate logic and DRAM memory devices, on the same semiconductor chip, has been developed. The process of reducing the aspect ratio, of these contact holes, features initially forming, via patterning procedures, lower, narrow diameter contact holes, to active device regions, in the logic area, while also forming self-aligned contact openings to source/drain regions in the DRAM memory region. After forming tungsten structures, in the lower, narrow diameter contact holes, polycide bitline, and polysilicon capacitor structures, are formed in the DRAM memory region, via deposition, and patterning, of upper level insulator layers, and polysilicon and polycide conductive layers. Upper, narrow diameter openings, are then formed in the upper level insulator layers, exposing the top surface of tungsten structures, located in the lower, narrow diameter contact holes. The formation of upper tungsten structures, in the upper, narrow diameter contact openings completes the process of forming metal structures, in narrow diameter openings, with reduced aspect ratios, achieved via a two stage contact hole opening, and a two stage metal filling procedure.

    摘要翻译： 已经开发了用于在相同的半导体芯片上将用于集成逻辑和DRAM存储器件的厚的绝缘体层中形成的窄直径接触孔的宽高比减小的方法。 减小这些接触孔的纵横比的过程，其特征在于，通过图案化步骤，在逻辑区域中最初形成较小的窄直径的接触孔到有源器件区域，同时还形成自对准的接触开口到源极/漏极 DRAM存储区域中的区域。 在形成钨结构之后，在下部窄直径的接触孔中，多晶硅位线和多晶硅电容器结构通过上层绝缘体层和多晶硅和多晶硅导电层的沉积和图案形成在DRAM存储区域中。 然后在上层绝缘体层中形成上部，小直径的开口，暴露位于下部较窄直径的接触孔中的钨结构的顶表面。 在上部窄直径接触开口中形成上部钨结构完成了通过两级接触孔开口形成的具有减小的纵横比的窄直径开口中的金属结构的形成和两阶段金属填充程序的过程。

    Capacitor and method for making same
    3.
    发明授权
    Capacitor and method for making same 有权
    电容器及其制作方法

    公开(公告)号：US08617949B2

    公开(公告)日：2013-12-31

    申请号：US13267424

    申请日：2011-10-06

    申请人： Kuo-Chi Tu ,  Wen-Chuan Chiang ,  Chen-Jong Wang

    发明人： Kuo-Chi Tu ,  Wen-Chuan Chiang ,  Chen-Jong Wang

    IPC分类号： H01L21/8242

    CPC分类号： H01L28/60 ,  H01L23/5223 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/108 ,  H01L27/10894 ,  H01L27/11 ,  H01L27/1116 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A system-on-chip device comprises a first capacitor in a first region, a second capacitor in a second region, and may further comprise a third capacitor in a third region, and any additional number of capacitors in additional regions. The capacitors may be of different shapes and sizes. A region may comprise more than one capacitor. Each capacitor in a region has a top electrode, a bottom electrode, and a capacitor insulator. The top electrodes of all the capacitors are formed in a common process, while the bottom electrodes of all the capacitors are formed in a common process. The capacitor insulator may have different number of sub-layers, formed with different materials or thickness. The capacitors may be formed in an inter-layer dielectric layer or in an inter-metal dielectric layer. The regions may be a mixed signal region, an analog region, and so forth.

    摘要翻译： 片上系统装置包括第一区域中的第一电容器，第二区域中的第二电容器，并且还可以包括第三区域中的第三电容器，以及附加区域中的任何附加数量的电容器。 电容器可以具有不同的形状和尺寸。 区域可以包括多于一个的电容器。 区域中的每个电容器具有顶部电极，底部电极和电容器绝缘体。 所有电容器的顶部电极以公共工艺形成，而所有电容器的底部电极形成在共同的工艺中。 电容器绝缘体可以具有不同数量的亚层，形成不同的材料或厚度。 电容器可以形成在层间电介质层中或在金属间介电层中。 这些区域可以是混合信号区域，模拟区域等。

    Method of forming a composite spacer to eliminate polysilicon stringers between elements in a pseudo SRAM cell
    5.
    发明授权
    Method of forming a composite spacer to eliminate polysilicon stringers between elements in a pseudo SRAM cell 有权
    形成复合间隔物以消除伪SRAM单元中的元件之间的多晶硅桁条的方法

    公开(公告)号：US06638813B1

    公开(公告)日：2003-10-28

    申请号：US10059825

    申请日：2002-01-29

    申请人： Kuo-Chyuan Tzeng ,  Chen-Jong Wang ,  Chung-Wei Chang ,  Wen-Chuan Chiang ,  Wen-Cheng Chen ,  Kuo-Ching Huang

    发明人： Kuo-Chyuan Tzeng ,  Chen-Jong Wang ,  Chung-Wei Chang ,  Wen-Chuan Chiang ,  Wen-Cheng Chen ,  Kuo-Ching Huang

    IPC分类号： H01L218242

    CPC分类号： H01L28/60 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/32137 ,  H01L21/76232 ,  H01L27/11

    摘要： A process for forming a composite insulator spacer on the sides of a buried stack capacitor structure, wherein the buried stack capacitor structure is located overlying a portion of an insulator filled, shallow trench isolation (STI) region, has been developed. A thin silicon nitride spacer is first formed on the sides of the completed buried stack capacitor structure, followed by deposition of a silicon oxide layer. An anisotropic dry etch procedure is next employed removing a top portion of the silicon oxide layer, and resulting in a partially defined silicon oxide spacer. A critical wet etch procedure is next used to remove the bottom portion of the silicon oxide layer, defining the final silicon oxide spacer of the composite insulator spacer, now comprised of a silicon oxide spacer on an underlying silicon nitride spacer. The wet etch procedure allows a gradual slope to be created at the composite insulator spacer—STI region interface, reducing the risk of leaving, or forming polysilicon residuals or stringers on the underlying surface, which can occur during definition of a MOSFET gate structure. The elimination of the polysilicon stringers reduces the risk of leakage between SRAM cell elements, such as buried stack capacitor structures, and MOSFET devices.

    摘要翻译： 已经开发了一种用于在掩埋叠层电容器结构的侧面上形成复合绝缘体间隔物的方法，其中埋层叠层电容器结构位于绝缘体填充的浅沟槽隔离（STI）区域的一部分上方。 首先在完成的掩埋堆叠电容器结构的侧面上形成薄的氮化硅间隔物，然后沉积氧化硅层。 接下来，使用各向异性干蚀刻工艺去除氧化硅层的顶部，并产生部分限定的氧化硅间隔物。 接下来使用关键的湿法蚀刻工艺来去除氧化硅层的底部，限定复合绝缘垫片的最终氧化硅隔离物，现在由下面的氮化硅间隔物上的氧化硅间隔物构成。 湿蚀刻工艺允许在复合绝缘体间隔件-ST区域界面处产生逐渐的斜率，从而降低在MOSFET栅极结构的定义期间可能发生的在下表面上的离开风险或形成多晶硅残余物或桁条。 多晶硅桁架的消除降低了诸如掩埋堆叠电容器结构的SRAM单元元件和MOSFET器件之间的泄漏的风险。

    Method of defining a buried stack capacitor structure for a one transistor RAM cell
    6.
    发明授权
    Method of defining a buried stack capacitor structure for a one transistor RAM cell 有权
    定义一个晶体管RAM单元的掩埋堆叠电容器结构的方法

    公开(公告)号：US06420226B1

    公开(公告)日：2002-07-16

    申请号：US10020753

    申请日：2001-12-12

    申请人： Wen-Cheng Chen ,  Kuo-Ching Huang ,  Chen-Jong Wang ,  Wen-Chuan Chiang

    发明人： Wen-Cheng Chen ,  Kuo-Ching Huang ,  Chen-Jong Wang ,  Wen-Chuan Chiang

    IPC分类号： H01L218244

    CPC分类号： H01L27/105 ,  H01L27/11 ,  H01L28/91 ,  H01L29/66181

    摘要： A process for fabricating a buried stack capacitor structure, to be used in a one transistor, RAM cell, has been developed. The process features formation of a self-aligned, ring shaped storage node opening, formed in a top portion of an silicon oxide filled, shallow trench shape, via a selective dry etch procedure. The selective dry etch procedure in combination with subsequent selective wet etch procedures, create bare portions of semiconductor substrate at the junction of the ring shaped storage node opening and the adjacent top surface of semiconductor, allowing a heavily doped region to be created in this region. The presence of the heavily doped region reduces the node to substrate resistance encountered when a storage node structure is formed in the ring shaped storage node structure, as well as on the overlying the heavily doped region.

    摘要翻译： 已经开发了用于单晶体管，RAM单元中的埋层叠层电容器结构的制造工艺。 该方法特征在于通过选择性干法蚀刻工艺形成形成在氧化硅填充的浅沟槽形状的顶部的自对准的环形存储节点开口。 选择性干蚀刻方法与随后的选择性湿法蚀刻程序结合，在环形存储节点开口和相邻的半导体顶表面的接合处产生半导体衬底的裸露部分，允许在该区域中产生重掺杂区域。 当在环形存储节点结构中形成存储节点结构时，以及在重掺杂区域上覆盖时，重掺杂区域的存在将节点与衬底电阻降低。

    Metal-Insulator-Metal Capacitor and Method of Fabricating
    7.
    发明申请
    Metal-Insulator-Metal Capacitor and Method of Fabricating 有权
    金属绝缘体 - 金属电容器和制造方法

    公开(公告)号：US20140042590A1

    公开(公告)日：2014-02-13

    申请号：US13571441

    申请日：2012-08-10

    申请人： Kuo-Ji Chen ,  Wen-Chuan Chiang ,  Huey-Chi Chu ,  Ming-Hsiang Song ,  Chen-Jong Wang

    发明人： Kuo-Ji Chen ,  Wen-Chuan Chiang ,  Huey-Chi Chu ,  Ming-Hsiang Song ,  Chen-Jong Wang

    IPC分类号： H01L29/92

    CPC分类号： H01L28/60 ,  H01L28/75 ,  H01L29/92

    摘要： Methods and apparatus are disclosed for manufacturing metal-insulator-metal (MIM) capacitors. The MIM capacitors may comprise an electrode, which may be a top or bottom electrode, which has a bottle neck. The MIM capacitors may comprise an electrode, which may be a top or bottom electrode, in contact with a sidewall of a via. The sidewall contact or the bottle neck of the electrode may burn out to form a high impedance path when the leakage current exceeds a specification, while the sidewall contact or the bottle neck of the electrode has no impact for normal MIM operations. The MIM capacitors may be used as decoupling capacitors.

    摘要翻译： 公开了用于制造金属 - 绝缘体 - 金属（MIM）电容器的方法和装置。 MIM电容器可以包括电极，其可以是具有瓶颈的顶部或底部电极。 MIM电容器可以包括与通孔的侧壁接触的电极，其可以是顶部或底部电极。 当泄漏电流超过规格时，电极的侧壁接触或瓶颈可燃烧形成高阻抗路径，而电极的侧壁接触或瓶颈对于正常的MIM操作没有影响。 MIM电容器可用作去耦电容器。

    Metal-insulator-metal capacitor with current leakage protection
    8.
    发明授权
    Metal-insulator-metal capacitor with current leakage protection 有权
    金属绝缘金属电容器，具有漏电保护

    公开(公告)号：US09178008B2

    公开(公告)日：2015-11-03

    申请号：US13571441

    申请日：2012-08-10

    申请人： Kuo-Ji Chen ,  Wen-Chuan Chiang ,  Huey-Chi Chu ,  Ming-Hsiang Song ,  Chen-Jong Wang

    发明人： Kuo-Ji Chen ,  Wen-Chuan Chiang ,  Huey-Chi Chu ,  Ming-Hsiang Song ,  Chen-Jong Wang

    IPC分类号： H01L49/02 ,  H01L29/92

    CPC分类号： H01L28/60 ,  H01L28/75 ,  H01L29/92

    摘要： Methods and apparatus are disclosed for manufacturing metal-insulator-metal (MIM) capacitors. The MIM capacitors may comprise an electrode, which may be a top or bottom electrode, which has a bottle neck. The MIM capacitors may comprise an electrode, which may be a top or bottom electrode, in contact with a sidewall of a via. The sidewall contact or the bottle neck of the electrode may burn out to form a high impedance path when the leakage current exceeds a specification, while the sidewall contact or the bottle neck of the electrode has no impact for normal MIM operations. The MIM capacitors may be used as decoupling capacitors.

    摘要翻译： 公开了用于制造金属 - 绝缘体 - 金属（MIM）电容器的方法和装置。 MIM电容器可以包括电极，其可以是具有瓶颈的顶部或底部电极。 MIM电容器可以包括与通孔的侧壁接触的电极，其可以是顶部或底部电极。 当泄漏电流超过规格时，电极的侧壁接触或瓶颈可燃烧形成高阻抗路径，而电极的侧壁接触或瓶颈对于正常的MIM操作没有影响。 MIM电容器可用作去耦电容器。

    Capacitor and Method for Making Same
    9.
    发明申请
    Capacitor and Method for Making Same 有权
    电容器和制作方法

    公开(公告)号：US20120091559A1

    公开(公告)日：2012-04-19

    申请号：US13267424

    申请日：2011-10-06

    申请人： Kuo-Chi Tu ,  Wen-Chuan Chiang ,  Chen-Jong Wang

    发明人： Kuo-Chi Tu ,  Wen-Chuan Chiang ,  Chen-Jong Wang

    IPC分类号： H01L21/02 ,  H01L29/92

    CPC分类号： H01L28/60 ,  H01L23/5223 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/108 ,  H01L27/10894 ,  H01L27/11 ,  H01L27/1116 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A system-on-chip (SOC) device comprises a first capacitor in a first region, a second capacitor in a second region, and may further comprise a third capacitor in a third region, and any additional number of capacitors in additional regions. The capacitors may be of different shapes and sizes. A region may comprise more than one capacitor. Each capacitor in a region has a top electrode, a bottom electrode, and a capacitor insulator. The top electrodes of all the capacitors are formed in a common process, while the bottom electrodes of all the capacitors are formed in a common process. The capacitor insulator may have different number of sub-layers, formed with different materials or different thickness. The capacitors may be formed in an inter-layer dielectric layer or in an inter-metal dielectric layer. The regions may be a mixed signal region, an analog region, a radio frequency region, a dynamic random access memory region, and so forth.

    摘要翻译： 片上系统（SOC）装置包括第一区域中的第一电容器，第二区域中的第二电容器，以及可以在第三区域中包括第三电容器，以及附加区域中的任何附加数量的电容器。 电容器可以具有不同的形状和尺寸。 区域可以包括多于一个的电容器。 区域中的每个电容器具有顶部电极，底部电极和电容器绝缘体。 所有电容器的顶部电极以公共工艺形成，而所有电容器的底部电极形成在共同的工艺中。 电容绝缘体可以具有不同数量的子层，形成不同的材料或不同的厚度。 电容器可以形成在层间电介质层中或在金属间介电层中。 这些区域可以是混合信号区域，模拟区域，射频区域，动态随机存取存储区域等。