摘要:
An Active Combustion Control System and method provides for monitoring combustor pressure and modulating fuel to a gas turbine combustor to prevent combustion dynamics and/or flame extinguishments. The system includes an actuator, wherein the actuator periodically injects pulsed fuel into the combustor. The apparatus also includes a sensor connected to the combustion chamber down stream from an inlet, where the sensor generates a signal detecting the pressure oscillations in the combustor. The apparatus controls the actuator in response to the sensor. The apparatus prompts the actuator to periodically inject pulsed fuel into the combustor at a predetermined sympathetic frequency and magnitude, thereby controlling the amplitude of the pressure oscillations in the combustor by modulating the natural oscillations.
摘要:
An Active Combustion Control System and method provides for monitoring combustor pressure and modulating fuel to a gas turbine combustor to prevent combustion dynamics and/or flame extinguishments. The system includes an actuator, wherein the actuator periodically injects pulsed fuel into the combustor. The apparatus also includes a sensor connected to the combustion chamber down stream from an inlet, where the sensor generates a signal detecting the pressure oscillations in the combustor. Lastly, the apparatus includes means for controlling the actuator in response to the sensor. The means for controlling prompts the actuator to periodically inject pulsed fuel into the combustor at a predetermined sympathetic frequency and magnitude, thereby controlling the amplitude of the pressure oscillations in the combustor by modulating the natural oscillations.
摘要:
A sensor assembly for electric field sensing is provided. The sensor assembly may include an array of Micro-Electro-Mechanical System (MEMS)-based resonant tunneling devices. A resonant tunneling device may be configured to generate a resonant tunneling signal in response to the electric field. The resonant tunneling device may include at least one electron state definer responsive to changes in at least one respective controllable characteristic of the electron state definer. The changes in the controllable characteristic are configured to affect the tunneling signal. An excitation device may be coupled to the resonant tunneling device to effect at least one of the changes in the controllable characteristic affecting the tunneling signal. A controller may be coupled to the resonant tunneling device and the excitation device to control the changes of the controllable characteristic in accordance with an automated control strategy configured to reduce an effect of noise on a measurement of the electric field.
摘要:
A high-temperature pressure sensor that includes a dielectric layer. The pressure sensor also includes a substrate capable of withstanding temperatures greater than 450° C. without entering a phase change, at least one semiconducting material deposited on the sapphire substrate, and a silicon dioxide layer deposited over the semiconducting material. One aspect of the pressure sensor includes a second semiconducting material.
摘要:
According to some embodiments, a Microelectromechanical System (MEMS) sensor includes a sensing material on a spring element. The sensor may also include a detector adapted to determine a resonant frequency associated with the spring element, wherein the resonant frequency changes upon the exposure of the sensing material to an analyte.
摘要:
A method of manufacturing an ignition device is provided. The method includes patterning a plurality of resistors on a membrane to form heating elements and thermally isolating the heating elements from an external environment via a cavity disposed adjacent to the heating elements.
摘要:
The invention provides a miniaturized sensor device including a thin film membrane having a first surface and a second surface, one or more resistive thin film heater/thermometer devices disposed directly or indirectly adjacent to the first surface of the thin film membrane, and a frame disposed directly or indirectly adjacent to the second surface of the thin film membrane, wherein one or more internal surfaces of the frame define at least one cell having at least one opening. The sensor device also includes a thin film layer disposed directly or indirectly adjacent to the frame. The sensor device further includes a sensing layer disposed directly or indirectly adjacent to the thin film membrane.
摘要:
A sensor assembly for electric field sensing is provided. The sensor assembly may include an array of Micro-Electro-Mechanical System (MEMS)-based resonant tunneling devices. A resonant tunneling device may be configured to generate a resonant tunneling signal in response to the electric field. The resonant tunneling device may include at least one electron state definer responsive to changes in at least one respective controllable characteristic of the electron state definer. The changes in the controllable characteristic are configured to affect the tunneling signal. An excitation device may be coupled to the resonant tunneling device to effect at least one of the changes in the controllable characteristic affecting the tunneling signal. A controller may be coupled to the resonant tunneling device and the excitation device to control the changes of the controllable characteristic in accordance with an automated control strategy configured to reduce an effect of noise on a measurement of the electric field.
摘要:
An ignition device for a gas appliance is provided. The ignition device includes a membrane and a plurality of heating elements embedded in the membrane, wherein the heating elements comprise a plurality of patterned resistors and wherein the plurality of heating elements are configured to heat a surface on application of voltage through the heating elements. The ignition device also includes a cavity disposed adjacent to the heating elements and configured to provide thermal isolation of the heating elements.
摘要:
According to some embodiments, a first layer of doped material may be provided to form a resistor. A second layer of undoped material may then be formed on the first layer. The first layer might comprise, for example, a layer of doped silicon carbide while the second layer comprises a layer of undoped silicon carbide. The resistance of the resistor may then be measured to determine a temperature.