摘要:
An improved rare probability connection call registration method using an incomplete call causation message for an asynchronous transfer mode switching system, which includes the steps of receiving a candidate code from an operator and classifying a normal call and an abnormal call with respect to each call when a call cause message is received, increasing the number of completed calls when the received call is normally completed, and judging whether an incomplete call occurred due to the lack of a switching resource or the busy state of the subscriber at a destination in the case of the abnormal call, terminating the call when the cause of the abnormal call is due to another cause except for the lack of the switching resource, or the on-busy of the subscriber, increasing the number of the incomplete calls when the call is incompletely terminated due to the lack of the switching resource or the on-busy of the subscriber, and checking the call completion ratio, and terminating the call when the call completion ratio is greater than a predetermined threshold value that the operator designated, registering the call as the RPCC, informing the resultant operation of the operator terminal, and requesting a call control with respect to the corresponding code.
摘要:
We describe and claim an internal signal replication device and method. A circuit comprising a selector to select one of a plurality of internally generated clock signals, and a compensation circuit to replicate the selected clock signal from a reference clock signal.
摘要:
Disclosed herein is a semiconductor memory device that includes a memory cell array and a plurality of pads for providing data to and from the memory cell array. A plurality of input/output line pairs corresponds to the plurality of pads. A reading means reads out the data from the memory cell array through the plurality of input/output line pairs and pads. A switch control circuit generates sequential switch control signals during a test mode. A switch control means receives the data from the reading means during the test mode. The switching means sequentially transfers the data to a representative pad responsive to the switch control signals. The present invention allows testing for defective memory cells at a wafer level using a limited number of probe needles.
摘要:
An apparatus and a method for measuring an effective channel. The apparatus includes an automatic measurement system including a testing terminal for a substrate, a switching matrix disposed at one side of the automatic measurement system, a leakage current measuring device and a capacitance measuring device electrically connected to the switching matrix by a predetermined terminal, and a controller which controls the automatic measurement system, the leakage current measuring device, and the capacitance measuring device.
摘要:
Semiconductor memory devices, block select decoding circuits and a method of activating a word line are provided. An example semiconductor memory device may include a plurality of memory banks. Each of the plurality of memory banks may include memory blocks which may be arranged in different addressable orders. If two edge memory blocks are activated in a given one of the plurality of memory banks, a non-edge memory block may be concurrently activated in at least one of remaining memory banks other than the given one memory bank. Accordingly, a number of concurrently activated memory blocks, a voltage required to enable a word line and noise may be reduced. The example semiconductor device may include the example block select decoding circuit, and likewise may perform the example method of activating a word line with an activation of a reduced number of memory blocks.
摘要:
A clock supply device for distributing a source clock signal to memory elements in a synchronous memory system reduces skew and improves accuracy by transmitting a first clock signal from a synchronization section located at a first position to a clock distribution section located at a second position and then feeding back a second clock signal to the synchronization section which includes a phase locked loop or delay locked loop. The synchronization section locks the first signal with the source clock signal, thereby controlling the skew between the first clock signal and the source clock signal. The clock distributing section distributes the first clock signal to memory elements and generates the second clock signal as a feedback signal responsive to the first clock signal. The clock supply device includes a first transmission line for transmitting the first clock signal from the first position to the second position, and a second transmission line for transmitting the second clock signal back to the first position. A third transmission line is optionally provided to transmit the source clock signal from a clock generating section located at a third position to the synchronization section at the first position. The signal delay characteristics of the second and third transmission lines are preferably equal.
摘要:
A semiconductor memory device includes a plurality of memory cell array blocks, a bit line sense amplifier, a local sense amplifier that can be controlled to be turned on or off, a data sense amplifier, and a controller. The controller activates a local sense control signal for a predetermined duration in response to first and second signals. The first signal is a bit line sense enable signal that activates the bit line sense amplifier, and the local sense amplifier is activated for a predetermined duration after the bit line sense enable signal is activated. The second signal is activated or deactivated in phase with a column selection line signal that connects a pair of bit lines and a pair of local input/output lines. Accordingly, it is possible to turn on or off the local sense amplifier according to operating conditions, thereby increasing a tRCD parameter and reducing the consumption of current. The operating speed of the semiconductor memory device can be improved by combining the local sense amplifier with a current type data sense amplifier that does not require precharging and equalization during a read operation.
摘要:
An apparatus and a method for measuring an effective channel. The apparatus includes an automatic measurement system including a testing terminal for a substrate, a switching matrix disposed at one side of the automatic measurement system, a leakage current measuring device and a capacitance measuring device electrically connected to the switching matrix by a predetermined terminal, and a controller which controls the automatic measurement system, the leakage current measuring device, and the capacitance measuring device.
摘要:
A semiconductor device may include a control signal generator configured to generate a test control signal in response to an externally applied test command signal. First and second transmission gates may be configured to open and close together in response to a test clock signal pulse and the test control signal. A delay circuit may be coupled between the first and second transmission gates so that the delay circuit is configured to receive a test input signal through the first transmission gate and to transmit a delayed test input signal to the second transmission gate, and the delayed test input signal may correspond to the test input signal. A latch may be coupled between the second transmission gate and an output of the semiconductor device, and the latch may be configured to latch a first logic value when a duration of the test clock signal pulse is less than a delay of the delay circuit and to latch a second logic value when a duration of the test clock signal pulse is greater than the delay of the delay circuit, and the first and second logic values be different. Related methods are also discussed.
摘要:
A test signal generator and method for testing a semiconductor wafer having a plurality of memory chips. A plurality of input buffers buffer test timing signals applied through a plurality of input terminals to the memory chips in test mode. A direct current source supplies a direct current of a given level to each of the terminals. The direct current source comprises a MOS transistor for supplying the direct current including a fuse with a first node connected between the terminal and buffer and a second node for receiving the direct current. The fuse is cut by an electric or laser cutter after wafer testing is complete. This enables a probe card for performing the wafer testing to be fabricated with a reduced number of probe tips, thereby overcoming the limitation of a test driver and allowing the simultaneous testing of semiconductor wafers having a plurality of memory chips having different pad configurations.