-
公开(公告)号:US20140061738A1
公开(公告)日:2014-03-06
申请号:US13602494
申请日:2012-09-04
申请人: Chung Chien Wang , Yeur-Luen Tu , Cheng-Ta Wu , Jiech-Fun Lu , Chun-Wei Chang , Wang-Pen Mo , Jhy-Jyi Sze , Chia-Shiung Tsai
发明人: Chung Chien Wang , Yeur-Luen Tu , Cheng-Ta Wu , Jiech-Fun Lu , Chun-Wei Chang , Wang-Pen Mo , Jhy-Jyi Sze , Chia-Shiung Tsai
IPC分类号: H01L31/0216
CPC分类号: H01L21/266 , H01L27/14689
摘要: The present disclosure relates to a method and composition to limit crystalline defects introduced in a semiconductor device during ion implantation. A high-temperature low dosage implant is performed utilizing a tri-layer photoresist which maintains the crystalline structure of the semiconductor device while limiting defect formation within the semiconductor device. The tri-layer photoresist comprises a layer of spin-on carbon deposited onto a substrate, a layer of silicon containing hard-mask formed above the layer of spin-on carbon, and a layer of photoresist formed above the layer of silicon containing hard-mask. A pattern formed in the layer of photoresist is sequentially transferred to the silicon containing hard-mask, then to the spin-on carbon, and defines an area of the substrate to be selectively implanted with ions.
摘要翻译: 本发明涉及在离子注入期间限制在半导体器件中引入的结晶缺陷的方法和组合物。 使用保持半导体器件的晶体结构同时限制半导体器件内的缺陷形成的三层光致抗蚀剂进行高温低剂量注入。 三层光致抗蚀剂包括沉积在基底上的旋涂碳层,在旋涂碳层上方形成的含硅的硬掩模层,以及形成在含硅硬质层的硅层之上的光致抗蚀剂层, 面具。 形成在光致抗蚀剂层上的图案被顺序地转移到含硅的硬掩模,然后转移到旋涂碳上,并且限定要选择性地注入离子的衬底区域。
-
公开(公告)号:US09099389B2
公开(公告)日:2015-08-04
申请号:US13371303
申请日:2012-02-10
申请人: Chung Chien Wang , Yeur-Luen Tu , Cheng-Ta Wu , Chia-Shiung Tsai
发明人: Chung Chien Wang , Yeur-Luen Tu , Cheng-Ta Wu , Chia-Shiung Tsai
IPC分类号: H01L21/268 , H01L27/146
CPC分类号: H01L21/268 , G01B11/14 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要: A method for reducing stripe patterns comprising receiving scattered light signals from a backside surface of a laser annealed backside illuminated image sensor wafer, generating a backside surface image based upon the scattered light signals, determining a distance between an edge of a sensor array of the laser anneal backside illuminated image sensor wafer and an adjacent boundary of a laser beam and re-calibrating the laser beam if the distance is less than a predetermined value.
摘要翻译: 一种用于减少条纹图案的方法,包括从激光退火背面照射图像传感器晶片的背面接收散射光信号,基于散射光信号产生背面图像,确定激光器的传感器阵列的边缘之间的距离 退火背面照射的图像传感器晶片和激光束的相邻边界,并且如果距离小于预定值则重新校准激光束。
-
公开(公告)号:US08759225B2
公开(公告)日:2014-06-24
申请号:US13602494
申请日:2012-09-04
申请人: Chung Chien Wang , Yeur-Luen Tu , Cheng-Ta Wu , Jiech-Fun Lu , Chun-Wei Chang , Wang-Pen Mo , Jhy-Jyi Sze , Chia-Shiung Tsai
发明人: Chung Chien Wang , Yeur-Luen Tu , Cheng-Ta Wu , Jiech-Fun Lu , Chun-Wei Chang , Wang-Pen Mo , Jhy-Jyi Sze , Chia-Shiung Tsai
IPC分类号: H01L21/311
CPC分类号: H01L21/266 , H01L27/14689
摘要: The present disclosure relates to a method and composition to limit crystalline defects introduced in a semiconductor device during ion implantation. A high-temperature low dosage implant is performed utilizing a tri-layer photoresist which maintains the crystalline structure of the semiconductor device while limiting defect formation within the semiconductor device. The tri-layer photoresist comprises a layer of spin-on carbon deposited onto a substrate, a layer of silicon containing hard-mask formed above the layer of spin-on carbon, and a layer of photoresist formed above the layer of silicon containing hard-mask. A pattern formed in the layer of photoresist is sequentially transferred to the silicon containing hard-mask, then to the spin-on carbon, and defines an area of the substrate to be selectively implanted with ions.
摘要翻译: 本发明涉及在离子注入期间限制在半导体器件中引入的结晶缺陷的方法和组合物。 使用保持半导体器件的晶体结构同时限制半导体器件内的缺陷形成的三层光致抗蚀剂进行高温低剂量注入。 三层光致抗蚀剂包括沉积在基底上的旋涂碳层,在旋涂碳层上方形成的含硅的硬掩模层,以及形成在含硅硬质层的硅层之上的光致抗蚀剂层, 面具。 形成在光致抗蚀剂层上的图案被顺序地转移到含硅的硬掩模,然后转移到旋涂碳上,并且限定要选择性地注入离子的衬底区域。
-
公开(公告)号:US20130210188A1
公开(公告)日:2013-08-15
申请号:US13371303
申请日:2012-02-10
申请人: Chung Chien Wang , Yeur-Luen Tu , Cheng-Ta Wu , Chia-Shiung Tsai
发明人: Chung Chien Wang , Yeur-Luen Tu , Cheng-Ta Wu , Chia-Shiung Tsai
IPC分类号: H01L21/268 , B23K26/02
CPC分类号: H01L21/268 , G01B11/14 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要: A method for reducing stripe patterns comprising receiving scattered light signals from a backside surface of a laser annealed backside illuminated image sensor wafer, generating a backside surface image based upon the scattered light signals, determining a distance between an edge of a sensor array of the laser anneal backside illuminated image sensor wafer and an adjacent boundary of a laser beam and re-calibrating the laser beam if the distance is less than a predetermined value.
摘要翻译: 一种用于减少条纹图案的方法,包括从激光退火背面照射图像传感器晶片的背面接收散射光信号,基于散射光信号产生背面图像,确定激光器的传感器阵列的边缘之间的距离 退火背面照射的图像传感器晶片和激光束的相邻边界,并且如果距离小于预定值则重新校准激光束。
-
公开(公告)号:US20130040446A1
公开(公告)日:2013-02-14
申请号:US13205179
申请日:2011-08-08
申请人: Chih-Yu Lai , Cheng-Ta Wu , Kai-Chun Hsu , Yeur-Luen Tu , Ching-Chun Wang , Chia-Shiung Tsai
发明人: Chih-Yu Lai , Cheng-Ta Wu , Kai-Chun Hsu , Yeur-Luen Tu , Ching-Chun Wang , Chia-Shiung Tsai
IPC分类号: H01L21/265
CPC分类号: H01L27/14687 , H01L27/1464
摘要: A method includes performing a grinding to a backside of a semiconductor substrate, wherein a remaining portion of the semiconductor substrate has a back surface. A treatment is then performed on the back surface using a method selected from the group consisting essentially of a dry treatment and a plasma treatment. Process gases that are used in the treatment include oxygen (O2). The plasma treatment is performed without vertical bias in a direction perpendicular to the back surface.
摘要翻译: 一种方法包括对半导体衬底的背面进行研磨,其中半导体衬底的剩余部分具有背面。 然后使用基本上由干法处理和等离子体处理组成的组中的方法在背面进行处理。 用于处理的工艺气体包括氧(O 2)。 在垂直于后表面的方向上进行等离子体处理而没有垂直偏压。
-
公开(公告)号:US09059057B2
公开(公告)日:2015-06-16
申请号:US13492258
申请日:2012-06-08
申请人: Chun-Han Tsao , Chih-Yu Lai , Chih-Hui Huang , Cheng-Ta Wu , Yeur-Luen Tu , Ching-Chun Wang , Shyh-Fann Ting , Chia-Shiung Tsai
发明人: Chun-Han Tsao , Chih-Yu Lai , Chih-Hui Huang , Cheng-Ta Wu , Yeur-Luen Tu , Ching-Chun Wang , Shyh-Fann Ting , Chia-Shiung Tsai
IPC分类号: H01L31/102 , H01L21/00 , H01L27/146 , H01L27/148
CPC分类号: H01L31/02164 , H01L27/14623 , H01L27/14632 , H01L27/1464 , H01L27/14643 , H01L27/14687 , H01L27/148 , H01L51/4273
摘要: An image sensor device including a semiconductor substrate that includes an array region and a black level correction region. The array region contains a plurality of radiation-sensitive pixels. The black level correction region contains one or more reference pixels. The substrate has a front side and a back side. The image sensor device includes a first compressively-stressed layer formed on the back side of the substrate. The first compressively-stressed layer contains silicon oxide, and is negatively charged. The second compressively-stressed layer contains silicon nitride, and is negatively charged. A metal shield is formed over at least a portion of the black level correction region. The image sensor device includes a third compressively-stressed layer formed on the metal shield and the second compressively-stressed layer. The third compressively-stressed layer contains silicon oxide. A sidewall of the metal shield is protected by the third compressively-stressed layer.
摘要翻译: 一种包括具有阵列区域和黑色电平校正区域的半导体衬底的图像传感器装置。 阵列区域包含多个辐射敏感像素。 黑色电平校正区域包含一个或多个参考像素。 基板具有前侧和后侧。 图像传感器装置包括形成在基板的背面上的第一压缩应力层。 第一压应力层含有氧化硅,带负电荷。 第二压应力层含有氮化硅,带负电荷。 在黑色电平校正区域的至少一部分上形成金属屏蔽。 图像传感器装置包括形成在金属屏蔽和第二压缩应力层上的第三压缩应力层。 第三压缩应力层含有氧化硅。 金属屏蔽层的侧壁由第三压应力层保护。
-
公开(公告)号:US08802457B2
公开(公告)日:2014-08-12
申请号:US13205179
申请日:2011-08-08
申请人: Chih-Yu Lai , Cheng-Ta Wu , Kai-Chun Hsu , Yeur-Luen Tu , Ching-Chun Wang , Chia-Shiung Tsai
发明人: Chih-Yu Lai , Cheng-Ta Wu , Kai-Chun Hsu , Yeur-Luen Tu , Ching-Chun Wang , Chia-Shiung Tsai
IPC分类号: H01L21/00 , H01L21/46 , H01L21/322
CPC分类号: H01L27/14687 , H01L27/1464
摘要: A method includes performing a grinding to a backside of a semiconductor substrate, wherein a remaining portion of the semiconductor substrate has a back surface. A treatment is then performed on the back surface using a method selected from the group consisting essentially of a dry treatment and a plasma treatment. Process gases that are used in the treatment include oxygen (O2). The plasma treatment is performed without vertical bias in a direction perpendicular to the back surface.
摘要翻译: 一种方法包括对半导体衬底的背面进行研磨,其中半导体衬底的剩余部分具有背面。 然后使用基本上由干法处理和等离子体处理组成的组中的方法在背面进行处理。 用于处理的工艺气体包括氧(O 2)。 在垂直于后表面的方向上进行等离子体处理而没有垂直偏压。
-
公开(公告)号:US08853811B2
公开(公告)日:2014-10-07
申请号:US13290733
申请日:2011-11-07
申请人: Chih-Yu Lai , Yeur-Luen Tu , Chih-Hui Huang , Cheng-Ta Wu , Chia-Shiung Tsai , Luan C. Tran
发明人: Chih-Yu Lai , Yeur-Luen Tu , Chih-Hui Huang , Cheng-Ta Wu , Chia-Shiung Tsai , Luan C. Tran
IPC分类号: H01L27/146
CPC分类号: H01L27/1463 , H01L21/02129 , H01L21/223 , H01L21/2255 , H01L21/76224 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14685 , H01L31/09
摘要: Provided is a semiconductor image sensor device. The image sensor device includes a substrate. The image sensor device includes a first pixel and a second pixel disposed in the substrate. The first and second pixels are neighboring pixels. The image sensor device includes an isolation structure disposed in the substrate and between the first and second pixels. The image sensor device includes a doped isolation device disposed in the substrate and between the first and second pixels. The doped isolation device surrounds the isolation structure in a conformal manner.
摘要翻译: 提供了一种半导体图像传感器装置。 图像传感器装置包括基板。 图像传感器装置包括设置在基板中的第一像素和第二像素。 第一和第二像素是相邻像素。 图像传感器装置包括设置在基板中以及第一和第二像素之间的隔离结构。 图像传感器装置包括设置在基板中以及第一和第二像素之间的掺杂隔离装置。 掺杂隔离装置以保形方式围绕隔离结构。
-
公开(公告)号:US20130113061A1
公开(公告)日:2013-05-09
申请号:US13290733
申请日:2011-11-07
申请人: Chih-Yu Lai , Yeur-Luen Tu , Chih-Hui Huang , Cheng-Ta Wu , Chia-Shiung Tsai , Luan C. Tran
发明人: Chih-Yu Lai , Yeur-Luen Tu , Chih-Hui Huang , Cheng-Ta Wu , Chia-Shiung Tsai , Luan C. Tran
IPC分类号: H01L27/146 , H01L31/18 , H01L31/0232
CPC分类号: H01L27/1463 , H01L21/02129 , H01L21/223 , H01L21/2255 , H01L21/76224 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14685 , H01L31/09
摘要: Provided is a semiconductor image sensor device. The image sensor device includes a substrate. The image sensor device includes a first pixel and a second pixel disposed in the substrate. The first and second pixels are neighboring pixels. The image sensor device includes an isolation structure disposed in the substrate and between the first and second pixels. The image sensor device includes a doped isolation device disposed in the substrate and between the first and second pixels. The doped isolation device surrounds the isolation structure in a conformal manner.
-
公开(公告)号:US08501610B2
公开(公告)日:2013-08-06
申请号:US12714194
申请日:2010-02-26
申请人: Chih-Wei Lin , Yi-Fang Lee , Cheng-Ta Wu , Cheng-Yuan Tsai
发明人: Chih-Wei Lin , Yi-Fang Lee , Cheng-Ta Wu , Cheng-Yuan Tsai
IPC分类号: H01L21/3205
CPC分类号: H01L29/788 , H01L21/28273 , H01L27/11521 , H01L29/42324 , H01L29/513 , H01L29/7881
摘要: Non-volatile memories and methods of fabrication thereof are described. In one embodiment, a method of fabricating a semiconductor device includes forming an oxide layer over a semiconductor substrate, and exposing the oxide layer to a first nitridation step to form a first nitrogen rich region. The first nitrogen rich region is disposed adjacent an interface between the oxide layer and the semiconductor substrate. After the first nitridation step, the oxide layer is exposed to a second nitridation step to form a second nitrogen rich region. A first gate electrode is formed on the oxide layer, wherein the second nitrogen rich region is disposed adjacent an interface between the oxide layer and the first gate electrode.
摘要翻译: 描述了非易失性存储器及其制造方法。 在一个实施例中,制造半导体器件的方法包括在半导体衬底上形成氧化物层,并将氧化物层暴露于第一氮化步骤以形成第一富氮区域。 第一富氮区域设置在氧化物层和半导体衬底之间的界面附近。 在第一次氮化步骤之后,将氧化物层暴露于第二氮化步骤以形成第二富氮区域。 第一栅电极形成在氧化物层上,其中第二富氮区邻近氧化物层和第一栅电极之间的界面设置。
-
-
-
-
-
-
-
-
-