公开(公告)号：US06756321B2

公开(公告)日：2004-06-29

申请号：US10264398

申请日：2002-10-05

申请人： Chung-Chi Ko ,  Yung-Cheng Lu ,  Lain-Jong Li ,  Lih-Ping Li ,  Yu-Huei Chen ,  Shu-E Ku

发明人： Chung-Chi Ko ,  Yung-Cheng Lu ,  Lain-Jong Li ,  Lih-Ping Li ,  Yu-Huei Chen ,  Shu-E Ku

IPC分类号： H01L2131

CPC分类号： H01L21/02362 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76832 ,  H01L21/76835 ,  Y10S438/902

摘要： A method for forming a capping layer for improved adhesion with an underlying insulating layer in a multiple layer semiconductor device manufacturing process including providing a semiconductor wafer including a process surface comprising a dielectric insulating layer; and, providing a capping layer overlying the dielectric insulating layer according to a chemical vapor deposition CVD) process. The capping layer of the present invention has improved adhesion and a reduced dielectric constant with comparable current leakage compared to capping layers of the prior art.

摘要翻译： 一种用于在多层半导体器件制造工艺中形成用于提高与底层绝缘层的粘附性的覆盖层的方法，包括提供包括包括介电绝缘层的工艺表面的半导体晶片; 并且根据化学气相沉积CVD提供覆盖介电绝缘层的覆盖层）。 与现有技术的覆盖层相比，本发明的覆盖层具有改善的粘附性和降低的介电常数，具有相当的电流泄漏。

公开(公告)号：US20060115980A1

公开(公告)日：2006-06-01

申请号：US11130044

申请日：2005-05-16

申请人： Chung-Chi Ko ,  Lih-Ping Li ,  Lain-Jong Li ,  Syun-Ming Jang

发明人： Chung-Chi Ko ,  Lih-Ping Li ,  Lain-Jong Li ,  Syun-Ming Jang

IPC分类号： H01L21/4763

CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76843

摘要： A method of forming a low dielectric constant film that can be used in a damascene process is disclosed. An organosilicon precursor such as octamethylcyclotrisiloxane (OMCTS) or any other compound that contains Si, C, and H and optionally O is transported into a PECVD chamber with a carrier gas such as CO or CO2 to provide a soft oxidation environment that leads to a higher carbon content and low k value in the deposited film. The carrier gas may replace helium or argon that have a higher bombardment property that can damage the substrate. Since CO and CO2 can contribute carbon to the deposited film, a lower k value is achieved than when an inert carrier gas is employed. The deposited film can be employed, for example, as a dielectric layer in a damascene stack or as an etch stop layer.

摘要翻译： 公开了一种形成可用于镶嵌工艺中的低介电常数膜的方法。 将诸如八甲基环三硅氧烷（OMCTS）的有机硅前体或含有Si，C和H以及任选的O的任何其它化合物转移到具有载体气体如CO或CO 2的PECVD室中，以提供 软氧化环境导致沉积膜中碳含量较高，k值低。 载气可以代替具有较高轰击性能的氦或氩，这可能损坏基底。 由于CO和CO 2可以对沉积膜贡献碳，所以实现比使用惰性载气时更低的k值。 沉积膜可以用作例如镶嵌层中的介电层或蚀刻停止层。

公开(公告)号：US06884659B2

公开(公告)日：2005-04-26

申请号：US10641648

申请日：2003-08-15

申请人： Bi-Trong Chen ,  Lain-Jong Li ,  Syun-Ming Jang ,  Shu E Ku ,  Tien I. Bao ,  Lih-Ping Li

发明人： Bi-Trong Chen ,  Lain-Jong Li ,  Syun-Ming Jang ,  Shu E Ku ,  Tien I. Bao ,  Lih-Ping Li

IPC分类号： C23C16/02 ,  H01L21/768 ,  H01L21/48 ,  B44C1/22

CPC分类号： C23C16/0272 ,  C23C16/0236 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838

摘要： In accordance with the objectives of the invention a new method is provided for improving adhesion strength that is deposited over the surface of a layer of copper. Conventional etch stop layers of for instance dichlorosilane (SiCl2H2) or SiOC have poor adhesion with an underlying layer of copper due to poor molecular binding between the interfacing layers. The surface of the deposited layer of copper can be provided with a special enhanced interface layer by using a method provided by the invention. That is pre-heat of the copper layer followed by a pre-cleaning treatment with ammonia (NH3) and N2, followed by forming an adhesive enhanced layer over the copper layer by treatment with N2 or O2 or N2 with alkyl-silane or alkyl silane.

摘要翻译： 根据本发明的目的，提供了一种新的方法来提高沉积在铜层表面上的粘合强度。 由于接口层之间的分子结合不良，常规的例如二氯硅烷（SiCl 2 H 2 H 2）或SiOC的蚀刻停止层与铜的下层具有差的粘合性。 通过使用本发明提供的方法，铜的沉积层的表面可以提供特殊的增强界面层。 这是铜层的预热，随后用氨（NH 3 3 N）和N 2 N 2进行预清洁处理，然后在铜上形成粘合增强层 通过用烷基硅烷或烷基硅烷处理N 2或O 2或N 2 N 2层。

公开(公告)号：US06623654B2

公开(公告)日：2003-09-23

申请号：US10035578

申请日：2001-11-09

申请人： Bi-Trong Chen ,  Lain-Jong Li ,  Syun-Ming Jang ,  Shu E Ku ,  Tien I. Bao ,  Lih-Ping Li

发明人： Bi-Trong Chen ,  Lain-Jong Li ,  Syun-Ming Jang ,  Shu E Ku ,  Tien I. Bao ,  Lih-Ping Li

IPC分类号： B44C122

CPC分类号： C23C16/0272 ,  C23C16/0236 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838

摘要： In accordance with the objectives of the invention a new method is provided for improving adhesion strength that is deposited over the surface of a layer of copper. Conventional etch stop layers of for instance dichlorosilane (SiCl2H2) or SiOC have poor adhesion with an underlying layer of copper due to poor molecular binding between the interfacing layers. The surface of the deposited layer of copper can be provided with a special enhanced interface layer by using a method provided by the invention. That is pre-heat of the copper layer followed by a pre-cleaning treatment with ammonia (NH3) and N2, followed by forming an adhesive enhanced layer over the copper layer by treatment with N2 or O2 or N2 with alkyl-silane or alkyl silane.

公开(公告)号：US06602779B1

公开(公告)日：2003-08-05

申请号：US10144522

申请日：2002-05-13

申请人： Lain-Jong Li ,  Yung-Cheng Lu ,  Chung-Chi Ko

发明人： Lain-Jong Li ,  Yung-Cheng Lu ,  Chung-Chi Ko

IPC分类号： H01L214763

CPC分类号： H01L21/76834 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76822 ,  H01L21/76829

摘要： Within a damascene method for forming a patterned conductor layer having formed interposed between its patterns a dielectric layer formed of a comparatively low dielectric constant dielectric material method, there is employed a hard mask layer formed upon the dielectric layer. The hard mask layer is formed employing a plasma enhanced chemical vapor deposition (PECVD) method in turn employing an organosilane carbon and silicon source material, a substrate temperature of from about 200 to about 500 degrees centigrade and a radio frequency power of from about 100 to about 500 watts per square centimeter substrate area. The hard mask layer provides for attenuated abrasive damage to the dielectric layer.

摘要翻译： 在用于形成介于其图案之间的图案化导体层的镶嵌方法中，由相对较低的介电常数介电材料法形成的电介质层，采用在该介电层上形成的硬掩模层。 使用等离子体增强化学气相沉积（PECVD）方法依次使用有机硅烷碳和硅源材料，基板温度为约200至约500摄氏度，射频功率为约100至 约500瓦/平方厘米基板面积。 硬掩模层为介电层提供减弱的磨损损伤。

公开(公告)号：US06908773B2

公开(公告)日：2005-06-21

申请号：US10102574

申请日：2002-03-19

申请人： Lain-Jong Li ,  Syun-Ming Jang ,  Chung-Chi Ko

发明人： Lain-Jong Li ,  Syun-Ming Jang ,  Chung-Chi Ko

IPC分类号： G01N21/35 ,  G01N21/55 ,  G01R31/26 ,  H01L21/66

CPC分类号： G01N21/35 ,  G01N21/3563 ,  G01N21/552 ,  G01N21/94 ,  G01N2021/3595

摘要： Attenuated total reflectance (ATR)-Fourier transform infrared (FTIR) metal surface cleanliness monitoring is disclosed. A metal surface of a semiconductor die is impinged with an infrared (IR) beam, such as can be accomplished by using an ATR technique. The IR beam as reflected by the metal surface is measured. For instance, an interferogram of the reflected IR beam may be measured. A Fourier transform of the interferogram may also be performed, in accordance with an FTIR technique. To determine whether the metal surface is contaminated, the IR beam as reflected is compared to a reference sample. For example, the Fourier transform of the interferogram may be compared to the reference sample. If there is deviation by more than a threshold, the metal surface may be concluded as being contaminated.

摘要翻译： 公开了衰减全反射（ATR） - 傅立叶变换红外（FTIR）金属表面清洁度监测。 半导体管芯的金属表面被红外（IR）光束照射，例如可以通过使用ATR技术来实现。 测量由金属表面反射的IR光束。 例如，可以测量反射的IR光束的干涉图。 干涉图的傅立叶变换也可以根据FTIR技术进行。 为了确定金属表面是否被污染，将反射的IR光束与参考样品进行比较。 例如，干涉图的傅立叶变换可以与参考样本进行比较。 如果偏差大于阈值，金属表面可能被认定为被污染。

公开(公告)号：US06654109B2

公开(公告)日：2003-11-25

申请号：US10068417

申请日：2002-02-05

申请人： Lain-Jong Li ,  Chung-Chi Ko ,  Syun-Ming Jang

发明人： Lain-Jong Li ,  Chung-Chi Ko ,  Syun-Ming Jang

IPC分类号： C01N2188

CPC分类号： G01N21/9501 ,  G01N21/9505 ,  G01N2021/8825

摘要： Defects such as holes and bumps in the surface of a semiconductor wafer are detected by an optical inspection system that combines darkfield and brightfield illumination techniques. A single light stop, which forms part of the illumination system, includes a pair of openings configured to produce both a solid cone of light and a hollow of light which are simultaneously focused onto the wafer surface. The directly emanating light as well as the scattered light collected from the wafer surface produce a resultant image that is the product of darkfield and brightfield illumination. Modulation of the light beam and tilting of the light focused onto the wafer surface may be advantageously used to improved contrast and resolution of the viewed image.

摘要翻译： 通过组合暗场和亮场照明技术的光学检查系统来检测半导体晶片的表面中的孔和凸起的缺陷。 形成照明系统一部分的单个光停止器包括一对开口，其被配置为产生同时聚焦在晶片表面上的实心锥体和中空光。 直接发光以及从晶片表面收集的散射光产生作为暗场和明场照明的产物的合成图像。 光束的调制和聚焦到晶片表面上的光的倾斜可以有利地用于改善观看图像的对比度和分辨率。

公开(公告)号：US06806185B2

公开(公告)日：2004-10-19

申请号：US10246895

申请日：2002-09-19

申请人： Lain-Jong Li ,  Chung-Chi Ko

发明人： Lain-Jong Li ,  Chung-Chi Ko

IPC分类号： H01L214763

CPC分类号： H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/76802 ,  H01L21/76829

摘要： Within a damascene method for forming a patterned conductor layer having formed interposed between its patterns a patterned dielectric layer formed of a comparatively low dielectric constant dielectric material method, there is employed a patterned capping layer formed upon the patterned dielectric layer. The patterned capping layer is formed employing a plasma enhanced chemical vapor deposition (PECVD) method in turn employing an organosilane carbon and silicon source material, a substrate temperature of from about 0 to about 200 degrees centigrade and a radio frequency power of from about 100 to about 1000 watts per square centimeter substrate area. The patterned capping layer provides for attenuated abrasive damage to the dielectric layer incident to the damascene method and is typically partially planarized incident to the damascene method.

摘要翻译： 在形成介于其图案之间的图案化导体层的镶嵌方法中，由相对低的介电常数介电材料法形成的图案化电介质层，采用形成在图案化电介质层上的图案化覆盖层。 图案化覆盖层使用等离子体增强化学气相沉积（PECVD）方法，依次使用有机硅烷碳和硅源材料，基底温度为约0至约200摄氏度，射频功率为约100至 约1000瓦/平方厘米衬底面积。 图案化盖层提供了对镶嵌方法入射的介电层的衰减的磨损损伤，并且通常部分地平坦化地入射到镶嵌法。

公开(公告)号：US06812167B2

公开(公告)日：2004-11-02

申请号：US10163045

申请日：2002-06-05

申请人： Yu-Huei Chen ,  Lain-Jong Li

发明人： Yu-Huei Chen ,  Lain-Jong Li

IPC分类号： H01L2100

CPC分类号： H01L21/02167 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3122 ,  H01L21/314 ,  Y10S438/931

摘要： This invention provides a method to improve the adhesion between dielectric material layers at the interface thereof, during the manufacture of a semiconductor device. The first step is to form a SiC-based dielectric material layer over a substrate. The SiC-based dielectric material layer is treated by oxygen plasma. A second layer of dielectric material is formed over the SiC-based dielectric material layer.

摘要翻译： 本发明提供了一种在半导体器件的制造期间改善其界面处的介电材料层之间的粘附性的方法。 第一步是在衬底上形成SiC基电介质材料层。 通过氧等离子体处理SiC基电介质材料层。 第二层电介质材料形成在SiC基电介质材料层上。

公开(公告)号：US08858776B2

公开(公告)日：2014-10-14

申请号：US13170624

申请日：2011-06-28

申请人： Lain-Jong Li ,  Ching-Yuan Su

发明人： Lain-Jong Li ,  Ching-Yuan Su

IPC分类号： C25B1/00 ,  B82Y40/00 ,  B82Y30/00 ,  C01B31/04

CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B32/19 ,  C01B2204/32 ,  C25B1/00 ,  Y10S977/845

摘要： A method of preparing graphene sheets. The method includes: immersing a portion of a first electrode and a portion of a second electrode in a solution containing an acid, an anionic surfactant, a salt, an oxidizing agent, or any combination thereof as an electrolyte, the immersed portion of the first electrode including a first carbon material and the immersed portion of the second electrode including a second carbon material or a metal; causing a potential to exist between the first and second electrodes; and recovering, from the solution, graphene sheets exfoliated from the carbon material(s). Also disclosed is a method of preparing a graphene film electrode. The method includes: dissolving graphene sheets in an organic solvent to form a solution, applying the solution on a substrate, adding deionized water to the solution on the substrate so that a graphene film is formed, and drying the graphene film.

摘要翻译： 制备石墨烯片的方法。 该方法包括：将第一电极和第二电极的一部分浸入含有酸，阴离子表面活性剂，盐，氧化剂或其任何组合的溶液中作为电解质，第一 包括第一碳材料的电极和包括第二碳材料或金属的第二电极的浸没部分; 导致在第一和第二电极之间存在潜力; 并从溶液中回收从碳材料剥离的石墨烯片。 还公开了制备石墨烯膜电极的方法。 该方法包括：将石墨烯片溶解在有机溶剂中以形成溶液，将溶液涂布在基材上，向基板上的溶液中加入去离子水，形成石墨烯膜，并干燥石墨烯膜。