COMPOSITION FOR METAL PLATING COMPRISING SUPPRESSING AGENT FOR VOID FREE SUBMICRON FEATURE FILLING
    2.
    发明申请
    COMPOSITION FOR METAL PLATING COMPRISING SUPPRESSING AGENT FOR VOID FREE SUBMICRON FEATURE FILLING 审中-公开
    金属镀层组合物,用于无电离子特征填充的包含抑制剂

    公开(公告)号:US20120024711A1

    公开(公告)日:2012-02-02

    申请号:US13257716

    申请日:2010-03-25

    IPC分类号: C25D5/02

    摘要: A composition for filling submicrometer sized features having an aperture size of 30 nanometers or less comprising a source of copper ions, and at least one suppressing agent selected from compounds of formula (I) wherein the R1 radicals are each independently selected from a copolymer of ethylene oxide and at least one further C3 to C4 alkylene oxide, said copolymer being a random copolymer. the R2 radicals are each independently selected from R1 or alkyl. X and Y are spacer groups independently, and X for each repeating unit independently, selected from C1 to C6 alkylen and Z—(O—Z)m wherein the Z radicals are each independently selected from C2 to C6 alkylen, n is an integer equal to or greater than 0. m is an integer equal to or greater than 1.

    摘要翻译: 用于填充具有30纳米或更小孔径的亚微米尺寸特征的组合物,其包含铜离子源,以及至少一种选自式(I)化合物的抑制剂,其中R 1基团各自独立地选自乙烯的共聚物 氧化物和至少一种其它C 3至C 4环氧烷烃,所述共聚物是无规共聚物。 R 2基团各自独立地选自R 1或烷基。 X和Y独立地为间隔基,X独立地选自C 1 -C 6亚烷基和Z-(O-Z)m,其中Z基独立地选自C 2 -C 6亚烷基,n是等于 m以上的整数,m为1以上的整数。