公开(公告)号：US20240355979A1

公开(公告)日：2024-10-24

申请号：US18304836

申请日：2023-04-21

Applicant: CreeLED, Inc.

Inventor： Robert Wilcox ,  Michael Check ,  Andre Pertuit ,  David Suich ,  Joseph G. Sokol ,  Colin Blakely

IPC: H01L33/62 ,  H01L33/56

CPC classification number: H01L33/62 ,  H01L33/56

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED packages with materials for reducing effects of environmental ingress are disclosed. Reactive materials are provided within LED packages that preferentially absorb environmental ingress away from other package elements, thereby extending operating lifetimes. Such reactive materials may be configured with redox potentials that are lower than the other package elements to more readily attract and react with environmental ingress that may enter LED packages under various operating environments. Arrangements of reactive materials are described relative to LED chips and corresponding electrical connections. Reactive materials may be formed as coatings, layers, pre-formed structures, and/or distributions of particles within LED packages.

公开(公告)号：US20240266462A1

公开(公告)日：2024-08-08

申请号：US18104966

申请日：2023-02-02

Applicant: CreeLED, Inc.

Inventor： Michael Check ,  David Suich ,  Colin Blakely ,  Joseph Sokol ,  Robert Wilcox ,  Andre Pertuit

IPC: H01L33/00

CPC classification number: H01L33/007 ,  H01L33/0093 ,  H01L2933/0058

Abstract: Solid-state lighting devices, and more particularly to laser etching light-emitting diode (LED) devices and related methods are disclosed. LED devices that use sapphire substrates are difficult to etch using conventional techniques, but laser etching and ablation of sapphire substrates overcomes these challenges. Laser etching a surface of the sapphire substrate can form light-extraction features that include structures formed in or on light-emitting surfaces of substrates. Light-extraction features may include repeating patterns of features with dimensions that, along with reduced substrate thicknesses, provide targeted emission profiles for flip-chip structures, such as Lambertian emission profiles. In some embodiments, laser ablation of the sapphire substrate can also be used to form trenches between active layer portions of an LED matrix to form pixels that reduce interference between the active layer portions. The trenches can further be filled with materials with light-altering properties to further refine the desired emission characteristics.

公开(公告)号：US20250056933A1

公开(公告)日：2025-02-13

申请号：US18446656

申请日：2023-08-09

Applicant: CreeLED, Inc.

Inventor： David Suich ,  Michael Check ,  Colin Blakely ,  Andre Pertuit ,  Joseph G. Sokol ,  Robert Wilcox

IPC: H01L33/48 ,  H01L33/62

Abstract: Semiconductor devices and more particularly mounting structures for edge-emitting semiconductor devices are disclosed. Exemplary edge-emitting semiconductor devices include light-emitting diode (LED) edge emitters. Mounting structures include submounts with recesses configured to receive edge-emitting semiconductor devices such that emitting edges are positioned toward desired emission directions. Submount recesses are disclosed that include corresponding electrical connections for edge-emitting semiconductor devices. Multiple edge-emitting semiconductor devices are mechanically supported and electrically connected within a single recess or with multiple recesses. Corresponding devices are disclosed that include arrays of edge-emitting semiconductor devices in one or more recesses.

公开(公告)号：US20240401756A1

公开(公告)日：2024-12-05

申请号：US18800861

申请日：2024-08-12

Applicant: CreeLED, Inc.

Inventor： Robert Wilcox ,  Michael Check ,  Colin Blakely ,  David Suich ,  Joseph G. Sokol ,  Andre Pertuit

IPC: F21K9/237 ,  F21K9/90 ,  F21V19/00 ,  F21V29/71 ,  F21Y113/17 ,  F21Y115/10

Abstract: Solid-state lighting devices, and more particularly to a three-dimensional (3D) light-emitting diode (LED) device and a method of manufacture are disclosed. A submount of the LED can have several submount portions that are angled with respect to each other, and LED chips can be mounted on each submount portion, such that the LED chips of the device are angled at different angles with respect to each other. In an embodiment, the LED device can include a heatsink that is in contact with each of the submount portions to channel heat away from the LED chips. The LED chips can be mounted on the submount portions when all submount portions are laying flat, and then the submount portions can be pushed or punched into their respective angles.

公开(公告)号：US20250006712A1

公开(公告)日：2025-01-02

申请号：US18345270

申请日：2023-06-30

Applicant: CreeLED, Inc.

Inventor： Andre Pertuit ,  Robert Wilcox ,  David Suich ,  Michael Check ,  Colin Blakely

IPC: H01L25/075 ,  H01L33/00

Abstract: Embodiments of a light-emitting diode (LED) device are disclosed. In some embodiments, the LED device includes a first LED device and one or more other LED devices mounted to the first LED device. By mounting the other LED devices to the first LED device, the LED devices are arranged in a stacked configuration. This allows for better light mixing of the light emitted by the various LED devices since the LED devices are at least partially aligned with one another. Different manners of stacking the LED devices are disclosed. The scope of the disclosure includes the specific embodiments disclosed as well as other combinations depending on the color mixing profile that is desired.

公开(公告)号：US20240266478A1

公开(公告)日：2024-08-08

申请号：US18163396

申请日：2023-02-02

Applicant: CreeLED, Inc.

Inventor： Andre Pertuit ,  Michael Check ,  David Suich ,  Colin Blakely ,  Robert Wilcox

IPC: H01L33/50 ,  H01L33/60

CPC classification number: H01L33/504 ,  H01L33/60 ,  H01L2933/0041 ,  H01L2933/0058

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly lumiphoric particle structures in wavelength conversion elements for LEDs and related methods are disclosed. Lumiphoric particle structures include coatings that provide improved optical, mechanical, and/or thermal characteristics when distributed within host materials of wavelength conversion elements. Coatings are pre-formed on lumiphoric particles before the lumiphoric particles are integrated with wavelength conversion elements. Heat treatments associated with firing wavelength conversion elements may diffuse coating materials within wavelength conversion elements to form graded material structures for further improvements to optical, mechanical, and/or thermal characteristics.

公开(公告)号：US20240162381A1

公开(公告)日：2024-05-16

申请号：US17984875

申请日：2022-11-10

Applicant: CreeLED, Inc.

Inventor： David Suich ,  Robert Wilcox ,  Michael Check ,  Andre Pertuit ,  Colin Blakely

IPC: H01L33/20 ,  H01L33/00 ,  H01L33/50

CPC classification number: H01L33/20 ,  H01L33/005 ,  H01L33/502 ,  H01L2933/0041

Abstract: The present disclosure relates to techniques for providing and fabricating a 3D shaped cover structure for a light emitting diode (LED) package that has improved light emission efficiencies and color over angle emissions over flat cover structures. The cover structure can form a hemispherical dome over an LED chip, so that light incident on the inside surface of the dome will be at a more acute angle which can reduce the internal reflection of light emitted by the LED chip. The cover structure can also serve as a remote phosphor lumiphore, thereby improving color over angle emission and reduce the need for an additional adhesion interface on the LED. The cover structure can be shaped during a green sheet lamination and sintering process to create the 3D shape. In other embodiments, a structure can be machined into a desired shape.

公开(公告)号：US20240154076A1

公开(公告)日：2024-05-09

申请号：US18053570

申请日：2022-11-08

Applicant: CreeLED, Inc.

Inventor： Andre Pertuit ,  Michael Check ,  David Suich ,  Colin Blakely ,  Robert Wilcox

IPC: H01L33/56 ,  H01L33/54 ,  H01L33/64

CPC classification number: H01L33/56 ,  H01L33/54 ,  H01L33/641

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly lumiphoric material structures for LED packages and related methods are disclosed. Cover structures with predefined color points for LED packages may include multiple lumiphoric material structures that are bonded together and arranged within LED packages. Lumiphoric material structures may include preformed and hardened structures, such as phosphor-in-glass or phosphor-in-ceramic, that are bonded together to form cover structures. Certain lumiphoric material structures include multiple sublayers of varying quantities and/or compositions of lumiphoric materials. Lumiphoric material structures with targeted color points may also be reduced to powder form and mixed within a binder for application in LED packages. Related methods include preforming cover structures of bonded lumiphoric material structures or assembling cover structures at a package level by separately arranging each lumiphoric material structure within LED packages.

公开(公告)号：US20250006709A1

公开(公告)日：2025-01-02

申请号：US18345166

申请日：2023-06-30

Applicant: CreeLED, Inc.

Inventor： Michael Check ,  David Suich ,  Colin Blakely ,  Andre Pertuit ,  Joseph G. Sokol ,  Robert Wilcox

IPC: H01L25/075 ,  H01L33/00 ,  H01L33/56 ,  H01L33/62

Abstract: Semiconductor devices and more particularly edge-emitting semiconductor devices and related methods are disclosed. Exemplary edge-emitting semiconductor devices include LED edge emitters. Electrical connections for edge-emitting devices may be provided along certain device edges with opposing edges forming light-emitting edges. LED edge emitters may be vertically arranged and assembled together to form LED arrays with reduced pitch. Related methods include bonding multiple wafer-level structures, such as LED wafers, together, followed by separation techniques that result in individual edge emitters or groupings of edge emitters in the form of LED arrays.

公开(公告)号：US20240413271A1

公开(公告)日：2024-12-12

申请号：US18330805

申请日：2023-06-07

Applicant: CreeLED, Inc.

Inventor： Michael Check ,  David Suich ,  Colin Blakely ,  Andre Pertuit ,  Robert Wilcox ,  Joseph G. Sokol

IPC: H01L33/50 ,  H01L33/00 ,  H01L33/10 ,  H01L33/14 ,  H01L33/38 ,  H01L33/44

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly arrangements of lumiphoric materials within LED chips are disclosed. Lumiphoric materials are incorporated or otherwise embedded within LED chips. Embedded lumiphoric materials are provided so that at least some portions of light generated by active LED structures are subject to wavelength conversion before exiting LED chip surfaces. Lumiphoric materials may form dielectric and/or passivation layers between various chip structures, such as between active LED structures and internal reflective layers and/or electrical contacts. Internally converted light propagating within LED chips may pass back through active LED structures with reduced light absorption.