公开(公告)号：US20180269166A1

公开(公告)日：2018-09-20

申请号：US15981956

申请日：2018-05-17

Applicant: DENSO CORPORATION

Inventor： Kenji ONODA ,  Syoichirou OOMAE

IPC: H01L23/00 ,  H01L23/495 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56

CPC classification number: H01L23/562 ,  H01L21/4825 ,  H01L21/4842 ,  H01L21/4871 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/40 ,  H01L23/4334 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49568 ,  H01L23/49575 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/06181 ,  H01L2224/26175 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/3303 ,  H01L2224/33181 ,  H01L2224/371 ,  H01L2224/37599 ,  H01L2224/40 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/83815 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14252 ,  H01L2924/181 ,  H01L2924/351 ,  H02P27/06 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00

Abstract: A semiconductor device includes a metal member (15), a first semiconductor chip (13), a second semiconductor chip (14), a first solder (24) and a second solder (25). A quantity of heat generated in the first semiconductor chip is greater than the second semiconductor chip. The second semiconductor chip is formed of a material having larger Young's modulus than the first semiconductor chip. The first semiconductor chip has a first metal layer (13a) connected to the metal member through a first solder (24) at a surface facing the metal member. The second semiconductor chip has a second metal layer (14a) connected to the metal member through a second solder (25) at a surface facing the metal member. A thickness of the second solder is greater than a maximum thickness of the first solder at least at a portion of the second solder corresponding to a part of an outer peripheral edge of the second metal layer.

公开(公告)号：US20180012847A1

公开(公告)日：2018-01-11

申请号：US15547583

申请日：2016-04-15

Applicant: DENSO CORPORATION

Inventor： Kenji ONODA ,  Syoichirou OOMAE

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H02P27/06

CPC classification number: H01L23/562 ,  H01L21/4825 ,  H01L21/4842 ,  H01L21/4871 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/40 ,  H01L23/4334 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49568 ,  H01L23/49575 ,  H01L24/33 ,  H01L24/83 ,  H01L25/07 ,  H01L25/18 ,  H01L2224/33 ,  H01L2224/3303 ,  H01L2224/371 ,  H01L2224/37599 ,  H01L2224/40 ,  H01L2224/83385 ,  H01L2224/83815 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14252 ,  H01L2924/181 ,  H01L2924/351 ,  H02P27/06 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A semiconductor device includes a metal member, a first semiconductor chip, a second semiconductor chip, a first solder and a second solder. A quantity of heat generated in the first semiconductor chip is greater than the second semiconductor chip. The second semiconductor chip is formed of a material having larger Young's modulus than the first semiconductor chip. The first semiconductor chip has a first metal layer connected to the metal member through a first solder at a surface facing the metal member. The second semiconductor chip has a second metal layer connected to the metal member through a second solder at a surface facing the metal member. A thickness of the second solder is greater than a maximum thickness of the first solder at least at a portion of the second solder corresponding to a part of an outer peripheral edge of the second metal layer.

公开(公告)号：US20170110395A1

公开(公告)日：2017-04-20

申请号：US15128648

申请日：2015-03-05

Applicant: DENSO CORPORATION

Inventor： Akira IWABUCHI ,  Atsushi KANAMORI ,  Kenji ONODA ,  Syoichirou OOMAE

IPC: H01L23/50 ,  H02M7/00 ,  H01L23/31 ,  H02M7/537 ,  H01L23/495 ,  H01L25/07

CPC classification number: H01L23/50 ,  H01L23/3121 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49568 ,  H01L23/49575 ,  H01L25/07 ,  H01L25/18 ,  H01L2224/48137 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2924/13055 ,  H01L2924/13091 ,  H02M7/003 ,  H02M7/537 ,  H02P27/06 ,  H01L2924/00

Abstract: A semiconductor device, in which a plurality of control terminals that correspond to a main terminal and the same semiconductor chip protrude from a surface of an encapsulating part, and a plurality of signal paths that include the plurality of control terminals are positioned so as to be aligned with the main terminal in a first direction. Provided in each of the plurality of signal paths are pairs of relay members having identical functions, and a first relay grouping that includes one relay member of the pair of relay and a second relay grouping that includes the other relay member of the pair are positioned neighboring each other aligned in the first direction, with the ordering of the first relay grouping being mirror-inverted relative to the second relay grouping.

公开(公告)号：US20170110341A1

公开(公告)日：2017-04-20

申请号：US15128127

申请日：2015-03-23

Applicant: DENSO CORPORATION

Inventor： Kenji ONODA ,  Eiji NOMURA ,  Tooru OOTANI ,  Akinori ODA

IPC: H01L21/48 ,  H01L21/56

CPC classification number: H01L21/4882 ,  H01L21/56 ,  H01L21/565 ,  H01L23/051 ,  H01L23/3107 ,  H01L24/33 ,  H01L25/07 ,  H01L25/18 ,  H01L2021/60015 ,  H01L2021/603 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A pressing unit including a pressing pin is attached to a mold, a semiconductor chip, first and second heat sinks, and solders are disposed in a cavity of the mold, a mold closing state is made, and a reflow is carried out in a state where the first and second heat sinks are pressed against first and second wall surfaces by the pressing pin to form a laminated body. After the laminated body is formed, the pressing pin is pulled out from the cavity, and a resin molded body is formed by injecting a resin.