公开(公告)号：US09143079B2

公开(公告)日：2015-09-22

申请号：US13926001

申请日：2013-06-25

Applicant: DENSO CORPORATION

Inventor： Noriyuki Kakimoto

IPC: H03K5/00 ,  H02P27/06 ,  H02P27/08 ,  H02M1/32 ,  H02M1/38 ,  H02M7/5387

CPC classification number: H02P27/06 ,  H02M1/32 ,  H02M1/38 ,  H02M7/53871 ,  H02P27/08

Abstract: A power converter includes an output circuit and a control circuit. The output circuit has an upper switching device connected to a direct-current power source and a lower switching device connected in series with the upper switching device. The output circuit supplies power to a load from a connection point between the switching devices. The control circuit supplies pulse-modulated control signals to the switching devices to turn ON and OFF the switching devices. The control circuit variably sets a switching speed and a dead-time of the switching devices in such a manner that as the switching speed becomes slower, the dead-time becomes longer.

Abstract translation: 电力转换器包括输出电路和控制电路。 输出电路具有连接到与上部开关装置串联连接的直流电源和下部开关装置的上部开关装置。 输出电路从开关器件之间的连接点向负载供电。 控制电路向开关装置提供脉冲调制的控制信号以使开关装置接通和断开。 控制电路以切换速度变慢的方式可变地设定切换装置的切换速度和死区时间，死区时间变长。

公开(公告)号：US11538794B2

公开(公告)日：2022-12-27

申请号：US16904088

申请日：2020-06-17

Applicant: DENSO CORPORATION

Inventor： Tetsuya Matsuoka ,  Yuu Yamahira ,  Kazuma Fukushima ,  Noriyuki Kakimoto

IPC: H01L25/07 ,  H01L25/18 ,  H01L29/739 ,  H02M7/48

Abstract: A power converter includes: at least one pair of first and second semiconductor devices including multiple first and second semiconductor chips, having first and second switching elements providing upper and lower arms, and multiple first and second main terminals having at least one of multiple first and second high potential terminals and multiple first and second low potential terminals; and a bridging member providing an upper and lower coupling portion, together with the first low and second high potential terminals. The first and second semiconductor chips are arranged in line symmetry with respect to first and second axes and in line symmetry with the second axis as a symmetry axis to differentiate the arrangement of the second low potential terminal with respect to the second high potential terminal from the arrangement of the first low potential terminal with respect to the first high potential terminal.

公开(公告)号：US10438852B2

公开(公告)日：2019-10-08

申请号：US15770258

申请日：2016-12-16

Applicant: DENSO CORPORATION

Inventor： Noriyuki Kakimoto

IPC: H01L29/00 ,  H01L21/8234 ,  H01L29/739 ,  H01L29/78 ,  H01L27/06 ,  H01L29/861 ,  H01L29/868 ,  H01L27/088 ,  H01L29/87 ,  H02M1/08 ,  H02M7/00 ,  H01L27/07 ,  H01L29/40 ,  H02M7/538

Abstract: A semiconductor device includes: reverse conducting switching elements-in each of which a diode element and a switching element are arranged in parallel on a single semiconductor substrate; a driver applying a gate voltage to a plurality of gate electrodes in the reverse conducting switching elements; and a mode determination unit determining whether a forward conduction mode in which a current mainly flows through the switching element or a reverse conduction mode in which the current flows through the diode element is being operated.

公开(公告)号：US10110219B2

公开(公告)日：2018-10-23

申请号：US15572640

申请日：2016-05-18

Applicant: DENSO CORPORATION

Inventor： Noriyuki Kakimoto

IPC: H03B1/00 ,  H03K3/00 ,  H03K17/567 ,  H02M1/08 ,  H03K17/56 ,  G01R19/00 ,  H03K5/08 ,  G01R31/44 ,  G01R31/26

Abstract: A driving apparatus configured to drive a plurality of switching elements including a first switching element and a second switching element, and each of the plurality of switching elements has a gate electrode. The driving apparatus includes: a driving circuit configured to supply a voltage to the gate electrode; and a controller configured to control the plurality of switching elements to turn on or off. The controller includes a control mode having a multi-driving mode configured to drive both of the first switching element and the second switching element, and a single driving mode configured to drive only the first switching element. The controller at the single driving mode sets a gate voltage to be applied to a gate electrode of the first switching element at a clamping voltage, which is smaller than the gate voltage of the first switching element at the multi-driving mode.

公开(公告)号：US11817429B2

公开(公告)日：2023-11-14

申请号：US17464914

申请日：2021-09-02

Applicant: DENSO CORPORATION

Inventor： Noriyuki Kakimoto ,  Hiroshi Ishino ,  Shinji Hiramitsu

IPC: H01L25/07 ,  H01L23/31 ,  H01L23/367 ,  H01L23/50 ,  H01L25/065 ,  H01L23/36 ,  H01L23/00 ,  B60L50/60 ,  H02P27/08

CPC classification number: H01L25/072 ,  H01L23/3107 ,  H01L23/36 ,  H01L23/367 ,  H01L23/50 ,  H01L24/29 ,  H01L24/32 ,  H01L25/0657 ,  B60L50/60 ,  H02P27/08

Abstract: A semiconductor device includes: multiple semiconductor elements each having a one surface and a rear surface in a plate thickness direction; a first member that sandwiches the multiple semiconductor elements and is electrically connected to an electrode on the one surface; a second member electrically connected to an electrode on the rear surface; and multiple terminals that are continuous from the first or second member. An area of the second member is smaller than that of the first member. Semiconductor elements are arranged in a longitudinal direction of the second member. The semiconductor device further includes a first joint portion that electrically connects each semiconductor element and the second member and a second joint portion that electrically connects a terminal and the second member. The multiple solder joint portions are symmetrically placed.

公开(公告)号：US09929073B2

公开(公告)日：2018-03-27

申请号：US15540695

申请日：2016-05-07

Applicant: DENSO CORPORATION

Inventor： Noriyuki Kakimoto

IPC: H01L31/058 ,  H01L23/34 ,  H01L21/822 ,  H03K17/08 ,  H01L27/04 ,  H01L25/07 ,  H01L25/18

CPC classification number: H01L23/34 ,  H01L21/822 ,  H01L25/07 ,  H01L25/18 ,  H01L27/04 ,  H01L2224/40137 ,  H01L2924/0002 ,  H03K17/08 ,  H03K17/127 ,  H03K2017/0806

Abstract: A semiconductor device includes: a first power semiconductor element; a second power semiconductor element that is connected in parallel with the first power semiconductor element; a voltage changing unit that changes a voltage applied to a control terminal of the first power semiconductor element when the second power semiconductor element is turned on; a detection unit that detects a current flowing in the first power semiconductor element when the voltage changing unit has changed the voltage applied to the control terminal of the first power semiconductor element; and a temperature estimation unit that estimates a temperature of the first power semiconductor element based on a characteristic of the change of the current of the first power semiconductor element with respect to a change of the voltage applied to the first power semiconductor element.