公开(公告)号：US20100117101A1

公开(公告)日：2010-05-13

申请号：US12697788

申请日：2010-02-01

申请人： Dae Won KIM ,  Yeo Jin Yoon ,  Dae Sung Kal

发明人： Dae Won KIM ,  Yeo Jin Yoon ,  Dae Sung Kal

IPC分类号： H01L33/00

CPC分类号： H01L27/15 ,  H01L33/62 ,  H01L2224/48137 ,  H01L2224/48091 ,  H01L2924/00014

摘要： Disclosed herein is an AC light emitting diode. The light emitting diode comprises a plurality of light emitting cells two-dimensionally arranged on a single substrate. Wires electrically connect the light emitting cells to one another to thereby form a serial array of the light emitting cells. Further, the light emitting cells are spaced apart from one another by distances within a range of 10 to 30 μm, and the serial array is operated while connected to an AC power source. Accordingly, the excellent operating characteristics and light output power can be secured in an AC light emitting diode with a limited size.

摘要翻译： 本文公开了AC发光二极管。 发光二极管包括二维布置在单个基板上的多个发光单元。 导线将发光单元彼此电连接从而形成发光单元的串联阵列。 此外，发光单元彼此间隔10〜30μm的距离，串联阵列在连接到交流电源时工作。 因此，可以在具有有限尺寸的AC发光二极管中确保优异的操作特性和光输出功率。

公开(公告)号：US20120139444A1

公开(公告)日：2012-06-07

申请号：US13151943

申请日：2011-06-02

申请人： Dae Won KIM ,  Do Hyung KIM ,  Dae Sung KAL ,  In Kyu PARK

发明人： Dae Won KIM ,  Do Hyung KIM ,  Dae Sung KAL ,  In Kyu PARK

IPC分类号： H05B37/02 ,  H01L27/15

CPC分类号： H01L25/0753 ,  F21K9/00 ,  H01L27/153 ,  H01L2224/48137 ,  H01L2224/49107

摘要： The disclosed light emitting device comprises at least one first light emitting element including at least one light emitting chip for emitting light having a wavelength of 400 to 500 nm and a phosphor; and at least one second light emitting element disposed adjacent to the first light emitting element to emit light having a wavelength of 560 to 880 nm.

摘要翻译： 所公开的发光器件包括至少一个第一发光元件，其包括至少一个用于发射波长为400至500nm的光的发光芯片和荧光体; 以及与第一发光元件相邻设置的至少一个第二发光元件，以发射波长为560至880nm的光。

公开(公告)号：US20110086453A1

公开(公告)日：2011-04-14

申请号：US12970321

申请日：2010-12-16

申请人： Dae Won KIM ,  Dae Sung KAL

发明人： Dae Won KIM ,  Dae Sung KAL

IPC分类号： H01L33/00

CPC分类号： H01L27/153 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/49107 ,  H01L2224/73265

摘要： Disclosed is a light emitting device having an isolating insulative layer for isolating light emitting cells from one another and a method of fabricating the same. The light emitting device comprises a substrate and a plurality of light emitting cells formed on the substrate. Each of the light emitting cells includes a lower semiconductor layer, an upper semiconductor layer positioned on one region of the lower semiconductor layer, and an active layer interposed between the lower and upper semiconductor layers. Furthermore, an isolating insulative layer is filled in regions between the plurality of light emitting cells to isolate the light emitting cells from one another. Further, wirings electrically connect the light emitting cells with one another. Each of the wirings connects the lower semiconductor layer of one light emitting cell and the upper semiconductor layer of another light emitting cell adjacent to the one light emitting cell.

摘要翻译： 公开了一种具有用于将发光元件彼此隔离的隔离绝缘层的发光器件及其制造方法。 发光器件包括衬底和形成在衬底上的多个发光单元。 每个发光单元包括下半导体层，位于下半导体层的一个区域上的上半导体层和插入在下半导体层和上半导体层之间的有源层。 此外，隔离绝缘层填充在多个发光单元之间的区域中，以将发光单元彼此隔离。 此外，布线将发光元件彼此电连接。 每个布线连接一个发光单元的下半导体层和与一个发光单元相邻的另一个发光单元的上半导体层。

公开(公告)号：US20120127718A1

公开(公告)日：2012-05-24

申请号：US13361631

申请日：2012-01-30

申请人： Dae Won KIM ,  Dae Sung KAL

发明人： Dae Won KIM ,  Dae Sung KAL

IPC分类号： F21V21/005

CPC分类号： H05B33/0821 ,  H01L27/153 ,  H01L2224/24137 ,  H01L2224/48137 ,  H01L2224/49107

摘要： An AC light emitting device is disclosed. The AC light emitting device includes at least four substrates. Serial arrays each of which has a plurality of light emitting cells connected in series are positioned on the substrates, respectively. Meanwhile, first connector means electrically connect the serial arrays formed on respective different substrates. At least two array groups each of which has at least two of the serial arrays connected in series by the first connector means are formed. The at least two array groups are connected in reverse parallel to operate. Accordingly, there is provided an AC light emitting device capable of being driven under an AC power source.

摘要翻译： 公开了一种AC发光器件。 交流发光装置包括至少四个基板。 串联阵列中的每一个具有串联连接的多个发光单元分别位于基板上。 同时，第一连接器装置电连接形成在各个不同基板上的串联阵列。 形成至少两个阵列组，每个阵列组具有由第一连接器装置串联连接的至少两个串行阵列。 至少两个阵列组反向并联连接以进行操作。 因此，提供了能够在AC电源下驱动的AC发光装置。

公开(公告)号：US20090108250A1

公开(公告)日：2009-04-30

申请号：US12203762

申请日：2008-09-03

申请人： Hwa Mok KIM ,  Dae Won KIM ,  Dae Sung KAL

发明人： Hwa Mok KIM ,  Dae Won KIM ,  Dae Sung KAL

IPC分类号： H01L33/00

CPC分类号： H01L33/465 ,  H01L33/105 ,  H01L33/42 ,  H01L33/46

摘要： A light emitting diode (LED) has an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a transparent electrode layer. The LED includes a tunnel layer interposed between the p-type semiconductor layer and the transparent electrode layer, an opening arranged in the transparent electrode layer so that the tunnel layer is exposed, a distributed Bragg reflector (DBR) arranged in the opening, and an electrode pad arranged on the transparent electrode layer to cover the DBR in the opening.

摘要翻译： 发光二极管（LED）具有n型半导体层，有源层，p型半导体层和透明电极层。 LED包括介于p型半导体层和透明电极层之间的隧道层，布置在透明电极层中的开口以使隧道层露出，布置在开口中的分布式布拉格反射器（DBR）和 电极焊盘，布置在透明电极层上以覆盖开口中的DBR。

公开(公告)号：US20120235158A1

公开(公告)日：2012-09-20

申请号：US13482851

申请日：2012-05-29

申请人： Kwang Choong KIM ,  Won Cheol SEO ,  Dae Won KIM ,  Dae Sung KAL ,  Kyung Hee YE

发明人： Kwang Choong KIM ,  Won Cheol SEO ,  Dae Won KIM ,  Dae Sung KAL ,  Kyung Hee YE

IPC分类号： H01L33/40

CPC分类号： H01L33/32 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/18 ,  H01L33/20 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.

摘要翻译： 本发明涉及具有多个非极性发光单元的发光器件及其制造方法。 氮化物半导体层设置在具有上表面的氮化镓衬底上。 上表面是非极性或半极性的晶体，相对于c面形成交叉角。 氮化物半导体层可以被图案化以形成彼此分离的发光单元。 当图案化发光单元时，可以在发光单元之间的分离区域中部分地去除衬底，以形成凹陷区域。 凹部区域填充有绝缘层，并且通过使用绝缘层至少部分地去除衬底。

公开(公告)号：US20110049472A1

公开(公告)日：2011-03-03

申请号：US12942635

申请日：2010-11-09

申请人： Hwa Mok KIM ,  Dae Won KIM ,  Dae Sung KAL

发明人： Hwa Mok KIM ,  Dae Won KIM ,  Dae Sung KAL

IPC分类号： H01L33/06

CPC分类号： H01L33/465 ,  H01L33/105 ,  H01L33/42 ,  H01L33/46

摘要： A light emitting diode (LED) has an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a transparent electrode layer. The LED includes a tunnel layer interposed between the p-type semiconductor layer and the transparent electrode layer, an opening arranged in the transparent electrode layer so that the tunnel layer is exposed, a distributed Bragg reflector (DBR) arranged in the opening, and an electrode pad arranged on the transparent electrode layer to cover the DBR in the opening.

摘要翻译： 发光二极管（LED）具有n型半导体层，有源层，p型半导体层和透明电极层。 LED包括介于p型半导体层和透明电极层之间的隧道层，布置在透明电极层中的开口以使隧道层露出，布置在开口中的分布式布拉格反射器（DBR）和 电极焊盘，布置在透明电极层上以覆盖开口中的DBR。

公开(公告)号：US20090020780A1

公开(公告)日：2009-01-22

申请号：US12143963

申请日：2008-06-23

申请人： Sang Joon LEE ,  Dae Sung KAL ,  Dae Won KIM

发明人： Sang Joon LEE ,  Dae Sung KAL ,  Dae Won KIM

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/325

摘要： Disclosed is a light emitting diode (LED) with an improved structure. The LED comprises an N-type semiconductor layer, a P-type semiconductor layer and an active layer interposed between the N-type and P-type semiconductor layers. The P-type compound semiconductor layer has a laminated structure comprising a P-type clad layer positioned on the active layer, a hole injection layer positioned on the P-type clad layer, and a P-type contact layer positioned on the hole injection layer. Accordingly, holes are more smoothly injected into the active layer from the P-type semiconductor layer, thereby improving the recombination rate of electrons and holes.

摘要翻译： 公开了一种具有改进结构的发光二极管（LED）。 LED包括N型半导体层，P型半导体层和介于N型和P型半导体层之间的有源层。 P型化合物半导体层具有包括位于有源层上的P型覆盖层，位于P型覆盖层上的空穴注入层和位于空穴注入层上的P型接触层的层叠结构 。 因此，从P型半导体层向空穴更顺畅地注入有源层，从而提高电子和空穴的复合率。

公开(公告)号：US20100032694A1

公开(公告)日：2010-02-11

申请号：US12605146

申请日：2009-10-23

申请人： Dae Won KIM ,  Yeo Jin YOON ,  Duck Hwan OH ,  Jong Hwan KIM

发明人： Dae Won KIM ,  Yeo Jin YOON ,  Duck Hwan OH ,  Jong Hwan KIM

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L27/153 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of fabricating the light emitting diode. According to the present invention, there is manufactured at least one light emitting cell including an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate. The method of the present invention comprises the steps of (a) forming at least one light emitting cell with an ITO layer formed on a top surface of the P-type semiconductor layer; (b) forming a contact groove for wiring connection in the ITO layer through dry etching; and (c) filling the contact groove with a contact connection portion made of a conductive material for the wiring connection.

公开(公告)号：US20100047943A1

公开(公告)日：2010-02-25

申请号：US12613275

申请日：2009-11-05

申请人： Jong Lam LEE ,  Jae Ho LEE ,  Yeo Jin YOON ,  Eu Jin HWANG ,  Dae Won KIM

发明人： Jong Lam LEE ,  Jae Ho LEE ,  Yeo Jin YOON ,  Eu Jin HWANG ,  Dae Won KIM

IPC分类号： H01L27/15

CPC分类号： H01L27/15 ,  H01L27/153 ,  H01L27/3281 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L51/5253 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2933/0066 ,  H01L2924/00

摘要： The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.

摘要翻译： 本发明涉及一种发光器件及其制造方法。 根据本发明，发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型半导体层的侧表面 或P型半导体层的水平面为20〜80°的斜率。 此外，本发明提供了一种发光器件，其包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，以及基座衬底翻转 芯片接合到基板上，其中一个发光单元的N型半导体层和另一个相邻的发光单元的P型半导体层彼此连接，并且至少包括P型半导体 发光单元的层与水平面的倾斜度为20〜80°。 此外，本发明提供一种制造发光器件的方法。 因此，具有发光效率，外部量子效率，提取效率等发光装置的特性得到提高，可靠性得到确保，能够发出高发光强度和亮度的光的优点。