公开(公告)号：US20100176456A1

公开(公告)日：2010-07-15

申请号：US12683050

申请日：2010-01-06

申请人： Daisuke Ikeno ,  Kazuaki Nakajima ,  Toshihiro Iizuka ,  Kenzo Manabe ,  Ichiro Yamamoto

发明人： Daisuke Ikeno ,  Kazuaki Nakajima ,  Toshihiro Iizuka ,  Kenzo Manabe ,  Ichiro Yamamoto

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L21/823857 ,  H01L21/823864 ,  H01L29/518

摘要： A semiconductor device includes a semiconductor substrate including a P-type semiconductor region, and an N channel MOSFET formed in the P-type semiconductor region, the N channel MOSFET including an insulating film of silicon oxide film or silicon oxynitride film formed on the semiconductor substrate, a gate insulating film including hafnium and formed on the insulating film, a lanthanum oxide film having a film thickness not larger than a predetermined value and formed between the gate insulating film and insulating film, and a gate electrode including a titanium nitride film having a N/Ti atomic ratio less than 1.

摘要翻译： 半导体器件包括包括P型半导体区域的半导体衬底和形成在P型半导体区域中的N沟道MOSFET，N沟道MOSFET包括形成在半导体衬底上的氧化硅膜或氧氮化硅膜的绝缘膜 包括铪并形成在所述绝缘膜上的栅极绝缘膜，形成在所述栅极绝缘膜和绝缘膜之间的膜厚度不大于预定值的氧化镧膜，以及包括氮化钛膜的栅电极，所述氮化钛膜具有 N / Ti原子比小于1。

公开(公告)号：US08188547B2

公开(公告)日：2012-05-29

申请号：US12819662

申请日：2010-06-21

申请人： Kenzo Manabe ,  Toshihiro Iizuka ,  Daisuke Ikeno

发明人： Kenzo Manabe ,  Toshihiro Iizuka ,  Daisuke Ikeno

IPC分类号： H01L29/78

CPC分类号： H01L21/823842

摘要： A first adjusting metal, capable of varying the threshold voltage of a first-conductivity-type transistor of a complementary transistor, is added to the first-conductivity-type transistor and a second-conductivity-type transistor at the same time, and a diffusion suppressive element, capable of suppressing diffusion of the first adjusting metal, is added from above a metal gate electrode of the second-conductivity-type transistor.

摘要翻译： 能够改变互补晶体管的第一导电型晶体管的阈值电压的第一调整金属同时被添加到第一导电型晶体管和第二导电型晶体管，并且扩散 从第二导电型晶体管的金属栅电极的上方添加能够抑制第一调整金属的扩散的抑制元件。

公开(公告)号：US06602722B2

公开(公告)日：2003-08-05

申请号：US10135620

申请日：2002-04-30

申请人： Ichiro Yamamoto ,  Toshihiro Iizuka ,  Yoshitake Kato

发明人： Ichiro Yamamoto ,  Toshihiro Iizuka ,  Yoshitake Kato

IPC分类号： H01G706

CPC分类号： H01L21/02197 ,  C23C16/409 ,  H01L21/02271 ,  H01L21/02318 ,  H01L21/02356 ,  H01L21/31691 ,  H01L27/1085 ,  H01L28/55

摘要： A barium strontium titanate is the ferroelectric substance with the perovskite structure available for a capacitor as a dielectric layer, and is crystallized through a high temperature heat treatment, in which the barium strontium titanate is further subjected to a low temperature heat treatment under the crystallizing temperature of the barium strontium titanate for eliminating impurities such as carbon and hydrogen therefrom so that the leakage current is drastically reduced.

公开(公告)号：US08440521B2

公开(公告)日：2013-05-14

申请号：US13067788

申请日：2011-06-27

申请人： Naomi Fukumaki ,  Eiji Hasegawa ,  Toshihiro Iizuka ,  Ichiro Yamamoto

发明人： Naomi Fukumaki ,  Eiji Hasegawa ,  Toshihiro Iizuka ,  Ichiro Yamamoto

IPC分类号： H01L21/3105

CPC分类号： H01L21/823857 ,  H01L21/823842

摘要： A method of manufacturing a semiconductor device having a p-type field effect transistor and an n-type field effect transistor includes the steps of: forming an interface insulating layer and a high-permittivity layer on a substrate in the stated order; forming a pattern of a sacrifice layer on the high-permittivity layer; forming a metal-containing film containing metal elements therein on the high-permittivity layer in a first region where the sacrifice layer is formed and a second region where no sacrifice layer is formed; introducing the metal elements into an interface between the interface insulating layer and the high-permittivity layer in the second region by conducting a heat treatment; and removing the sacrifice layer by wet etching, wherein in the removing step, the sacrifice layer is etched easily more than the high-permittivity layer. With this configuration, the semiconductor device excellent in reliability is obtained.

摘要翻译： 制造具有p型场效应晶体管和n型场效应晶体管的半导体器件的方法包括以下步骤：按照所述顺序在衬底上形成界面绝缘层和高电容率层; 在高电介质层上形成牺牲层的图案; 在形成有牺牲层的第一区域和形成牺牲层的第二区域的高介电常数层上形成含有金属元素的含金属膜; 通过进行热处理，将金属元素引入第二区域中的界面绝缘层与高电容率层之间的界面; 并且通过湿法蚀刻去除牺牲层，其中在去除步骤中，牺牲层比高介电常数层容易蚀刻。 由此，能够获得可靠性优异的半导体装置。

公开(公告)号：US07943475B2

公开(公告)日：2011-05-17

申请号：US11324536

申请日：2006-01-04

申请人： Tomoe Yamamoto ,  Toshihiro Iizuka

发明人： Tomoe Yamamoto ,  Toshihiro Iizuka

IPC分类号： H01L27/108 ,  H01L21/8242

CPC分类号： H01L21/02181 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/02329 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/3143 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/40 ,  H01L28/90 ,  H01L2924/0002 ,  Y10S257/906 ,  H01L2924/00

摘要： There is provided a semiconductor device comprising a dielectric film made of a high dielectric constant material, in which a leak current is reduced in the film and which exhibits improved device reliability. Specifically, a dielectric film 142 is a metal-compound film having a composition represented by the formula MOxCyNz wherein x, y and z meet the conditions: 0

摘要翻译： 提供了一种半导体器件，其包括由高介电常数材料制成的电介质膜，其中薄膜中的漏电流被降低并且具有提高的器件可靠性。 具体地说，电介质膜142是具有由式MOxCyNz表示的组成的金属化合物膜，其中x，y和z满足条件：0

公开(公告)号：US06349019B1

公开(公告)日：2002-02-19

申请号：US08286224

申请日：1994-08-05

申请人： Toshihiro Iizuka ,  Yukihito Ito ,  Shoji Toyoda

发明人： Toshihiro Iizuka ,  Yukihito Ito ,  Shoji Toyoda

IPC分类号： G11B555

CPC分类号： G11B5/6005

摘要： This invention provides a magnetic head device to be incorporated in a hard disc drive device which can minimize the fluctuations in the height of a floating head slider between the outer periphery and inner periphery of a magnetic disc and which has stable floating characteristics over the whole recording area thereof. The magnetic head device includes a head arm which is attached within a hard disc drive device in a rotatable/swingable manner and a head slider fixed on an end of a suspension member extending from the head arm, wherein the distance between the rotational center of the head arm to the center of the head slider and the position of the center of the rotation of the head arm are so determined to satisfy the relation, −0.1≦(D−L)≦0.6 W−4.4 when the distance between the rotational center of the head arm and the center of a magnetic disc is given as D, the distance from the rotational center of the head arm to the center of the head slider as L, and the width of the recording area on radius of the magnetic disc as W.

摘要翻译： 本发明提供一种磁头装置，其被结合在硬盘驱动装置中，该磁头驱动装置可以最小化磁盘的外周和内周之间的浮动磁头滑块的高度波动，并且在整个记录上具有稳定的浮动特性 面积。 磁头装置包括头臂，其以可旋转/可摆动的方式附接在硬盘驱动装置内，头部滑块固定在从头臂延伸的悬挂构件的端部上，其中， 当头臂的旋转中心与磁盘的中心之间的距离被给定时，头臂到头部滑块的中心并且头臂的旋转中心的位置被确定为满足关系 作为D，从头臂的旋转中心到头滑块的中心的距离为L，磁盘的半径上的记录区域的宽度为W.

公开(公告)号：US20070152256A1

公开(公告)日：2007-07-05

申请号：US11637147

申请日：2006-12-12

申请人： Toshihiro Iizuka ,  Tomoe Yamamoto ,  Mami Toda ,  Shintaro Yamamichi

发明人： Toshihiro Iizuka ,  Tomoe Yamamoto ,  Mami Toda ,  Shintaro Yamamichi

IPC分类号： H01L29/94

CPC分类号： H01L27/108 ,  C23C16/405 ,  C23C16/45525 ,  G11C11/404 ,  G11C2207/104 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/90

摘要： A semiconductor device having a logic section and a memory section that are formed on the same semiconductor chip, including: a first transistor formed in the logic section and having gate electrodes and source and drain regions, and a second transistor formed in the memory section having gate electrodes, source and drain regions and a capacitor, the capacitor being of a MIM structure and having an upper and a lower metal electrode and a capacitor dielectric film sandwiched therebetween, the capacitor dielectric film being formed of a dielectric material which is selected from the group consisting of ZrO2, Hf92, (Zrx, Hf1-x)O2 (0

摘要翻译： 一种具有形成在同一半导体芯片上的逻辑部分和存储部分的半导体器件，包括：形成在逻辑部分中并具有栅电极和源极和漏极区域的第一晶体管，以及形成在存储部分中的第二晶体管， 栅极电极，源极和漏极区域以及电容器，电容器是MIM结构，并且具有夹在其间的上部和下部金属电极和电容器电介质膜，所述电容器电介质膜由介电材料形成，所述绝缘材料选自 由ZrO2，Hf92，（Zrx，Hf1-x）O2（0

公开(公告)号：US06326258B1

公开(公告)日：2001-12-04

申请号：US09552884

申请日：2000-04-20

申请人： Toshihiro Iizuka

发明人： Toshihiro Iizuka

IPC分类号： H01L218242

CPC分类号： H01L28/55

摘要： A method of manufacturing a semiconductor device such as a semiconductor memory device having a thin film capacitor. The thin film capacitor is formed by sequentially stacking a lower electrode of noble metal, a high dielectric constant insulating film and an upper electrode of noble metal. After forming said capacitor, a first annealing process is performed in an atmosphere including hydrogen and, thereafter, a second annealing process is performed in an atmosphere which does not include hydrogen at a temperature equal to or lower than a temperature of said first annealing process. The first annealing process is performed, for example, in a mixed gas including hydrogen and nitrogen. The second annealing process is performed, for example, in an atmosphere including at least one selected from a group consisting of nitrogen gas, inert gas and oxygen gas.

摘要翻译： 一种制造半导体器件的方法，例如具有薄膜电容器的半导体存储器件。 薄膜电容器通过依次堆叠贵金属的下电极，高介电常数绝缘膜和贵金属的上电极而形成。 在形成所述电容器之后，在包括氢的气氛中进行第一退火处理，然后在不包括氢的气氛中在等于或低于所述第一退火处理的温度的温度下进行第二退火处理。 第一退火处理例如在包括氢和氮的混合气体中进行。 第二退火处理例如在包括从氮气，惰性气体和氧气组成的组中选择的至少一种的气氛中进行。

公开(公告)号：US06875667B2

公开(公告)日：2005-04-05

申请号：US10680217

申请日：2003-10-08

申请人： Toshihiro Iizuka ,  Tomoe Yamamoto

发明人： Toshihiro Iizuka ,  Tomoe Yamamoto

IPC分类号： H01L21/316 ,  H01L21/02 ,  H01L21/20 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L27/10852 ,  H01L27/10811 ,  H01L27/10885 ,  H01L28/91

摘要： A capacitor is provided that is optimal for use in DRAM and has high dielectric constant, and allows leakage current flowing therethrough to be maintained at a low level, and further, permits dependence of the leakage current on temperatures to be small. That is, capacitor openings are formed in an inter layer silicon oxide layer and a TiN film is patterned so that TiN films are left only within the openings to form lower electrodes within the openings. Subsequently, a Zr- and/or Hf-containing oxide film (represented by the formula, multicomponent Zr.sub.x.Hf.sub.1-x.O.sub.2 film (0≦x≦1)) formed from a metal-containing organic compound as a reactant and a Ti-containing oxide film are laminated to form capacitor dielectrics. After deposition of the Zr- and/or Hf-containing oxide film, the Zr- and/or Hf-containing oxide film is subjected to heat treatment to be performed in an oxidizing ambient to remove residual carbon being retained in the Zr- and/or Hf-containing oxide film, leading to formation of a capacitor that is optimal for use in DRAM and has high dielectric constant, and allows leakage current flowing therethrough to be maintained at a low level.

摘要翻译： 提供了一种电容器，其优选用于DRAM并具有高介电常数，并且允许流过其的漏电流保持在低水平，并且还允许漏电流对温度的依赖性较小。 也就是说，电容器开口形成在层间氧化硅层中，并且TiN膜被图案化，使得TiN膜仅留在开口内以在开口内形成下电极。 随后，由一种由ZrO和/或Hf组成的Zr和/或Hf的氧化物膜（由式表示的多组分Zr.sub.Hf-xO.2薄膜（0 <= x <= 1）） 含金属的有机化合物作为反应物和含Ti氧化物膜层压以形成电容器电介质。 在沉积含Zr和/或Hf的氧化物膜之后，对含Zr和/或Hf的氧化物膜进行热处理以在氧化环境中进行，以除去保留在Zr和/ 或含Hf氧化物膜，导致形成最适用于DRAM并具有高介电常数的电容器，并允许流过其中的漏电流保持在低水平。

公开(公告)号：US06596602B2

公开(公告)日：2003-07-22

申请号：US10053598

申请日：2002-01-24

申请人： Toshihiro Iizuka ,  Tomoe Yamamoto

发明人： Toshihiro Iizuka ,  Tomoe Yamamoto

IPC分类号： H01L27108

CPC分类号： H01L21/02183 ,  H01L21/0214 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/31691 ,  H01L28/55 ,  H01L28/56 ,  H01L28/91

摘要： The method for fabricating a semiconductor device in accordance with the present invention has the steps of: forming a metal film as a lower electrode of a capacitor on a semiconductor substrate, followed by forming a capacity insulator film over the lower electrode by the ALCVD process; and forming an upper electrode of the capacitor on the capacity insulator film.

摘要翻译： 根据本发明的制造半导体器件的方法具有以下步骤：在半导体衬底上形成作为电容器的下电极的金属膜，然后通过ALCVD工艺在下电极上形成电容绝缘膜; 以及在所述电容绝缘膜上形成所述电容器的上电极。