公开(公告)号：US20050245080A1

公开(公告)日：2005-11-03

申请号：US11039967

申请日：2005-01-24

申请人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari ,  Yukiko Nishioka ,  Tsuyoshi Sahoda

发明人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari ,  Yukiko Nishioka ,  Tsuyoshi Sahoda

IPC分类号： C23C18/16 ,  C23C18/18 ,  H01L21/00 ,  H01L21/02 ,  H01L21/288 ,  H01L21/306 ,  H01L21/321 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/02068 ,  C23C18/1632 ,  C23C18/1689 ,  C23C18/1844 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/67028 ,  H01L21/76849 ,  H01L21/76874 ,  H01L21/76883

摘要： A substrate processing method can securely form a metal film by electroless plating on an exposed surface of a base metal, such as interconnects, with increased throughput and without the formation of voids in the base metal. The substrate processing method includes: cleaning a surface of a substrate having a base metal formed in the surface with a cleaning solution comprising an aqueous solution of a carboxyl group-containing organic acid or its salt and a surfactant as an additive; bringing the surface of the substrate after the cleaning into contact with a processing solution comprising a mixture of the cleaning solution and a solution containing a catalyst metal ion, thereby applying the catalyst to the surface of the substrate; and forming a metal film by electroless plating on the catalyst-applied surface of the substrate.

摘要翻译： 基板处理方法可以通过在贱金属（例如互连）的暴露表面上通过无电解电镀牢固地形成金属膜，具有增加的生产量并且在母材中不形成空隙。 基板处理方法包括：用包含含羧基的有机酸或其盐和表面活性剂的水溶液作为添加剂的清洗溶液清洗在表面形成的基体金属的基材的表面; 使清洗后的基板的表面与包含清洗液和含有催化剂金属离子的溶液的混合物的处理溶液接触，从而将催化剂施加到基板的表面; 以及通过在基板的催化剂涂覆表面上通过无电镀形成金属膜。

公开(公告)号：US20100105154A1

公开(公告)日：2010-04-29

申请号：US12685820

申请日：2010-01-12

申请人： XINMING WANG ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari ,  Yukiko Nishioka

发明人： XINMING WANG ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari ,  Yukiko Nishioka

IPC分类号： H01L21/66 ,  H01L21/46

CPC分类号： H01L21/02068 ,  C23C18/1632 ,  C23C18/1689 ,  C23C18/1844 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/67028 ,  H01L21/76849 ,  H01L21/76874 ,  H01L21/76883

摘要： A substrate processing method can securely form a metal film by electroless plating on an exposed surface of a base metal, such as interconnects, with increased throughput and without the formation of voids in the base metal. The substrate processing method includes: cleaning a surface of a substrate having a base metal formed in the surface with a cleaning solution comprising an aqueous solution of a carboxyl group-containing organic acid or its salt and a surfactant as an additive; bringing the surface of the substrate after the cleaning into contact with a processing solution comprising a mixture of the cleaning solution and a solution containing a catalyst metal ion, thereby applying the catalyst to the surface of the substrate; and forming a metal film by electroless plating on the catalyst-applied surface of the substrate.

摘要翻译： 基板处理方法可以通过在贱金属（例如互连）的暴露表面上通过无电解电镀牢固地形成金属膜，具有增加的生产量并且在母材中不形成空隙。 基板处理方法包括：用包含含羧基的有机酸或其盐和表面活性剂的水溶液作为添加剂的清洗溶液清洗在表面形成的基体金属的基材的表面; 使清洗后的基板的表面与包含清洗液和含有催化剂金属离子的溶液的混合物的处理溶液接触，从而将催化剂施加到基板的表面; 以及通过在基板的催化剂涂覆表面上通过无电镀形成金属膜。

公开(公告)号：US07498261B2

公开(公告)日：2009-03-03

申请号：US11219777

申请日：2005-09-07

申请人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari

发明人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari

IPC分类号： H01L21/44

CPC分类号： H01L21/288 ,  C23C18/1619 ,  C23C18/1669 ,  C23C18/32 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76874

摘要： A metal film-forming method of the present invention can form a metal film having different film qualities in the thickness direction, in a continuous manner using a single processing solution. The metal film-forming method including: providing a substrate having embedded interconnects formed in interconnect recesses provided in a surface of the substrate; and forming a metal film, having different film qualities in the thickness direction, on surfaces of the interconnects in a continuous manner by changing the flow state of a processing solution relative to the surface of the substrate while keeping the surface of the substrate in contact with the processing solution.

摘要翻译： 本发明的金属成膜方法可以使用单一的处理液以连续的方式形成厚度方向的膜质量不同的金属膜。 所述金属成膜方法包括：提供具有形成在所述基板的表面中的互连凹槽中的嵌入式互连的基板; 并且通过在保持基板的表面与基板的表面接触的同时改变处理液相对于基板的表面的流动状态，以连续的方式在相互连接的表面上形成在厚度方向上具有不同膜质量的金属膜 处理方案。

公开(公告)号：US20080067679A1

公开(公告)日：2008-03-20

申请号：US11663351

申请日：2005-09-22

申请人： Daisuke Takagi ,  Xinming Wang ,  Akira Owatari ,  Akira Fukunaga ,  Akihiko Tashiro

发明人： Daisuke Takagi ,  Xinming Wang ,  Akira Owatari ,  Akira Fukunaga ,  Akihiko Tashiro

IPC分类号： H01L23/52 ,  H01B1/02 ,  H01L21/4763

CPC分类号： H01L23/53238 ,  C23C18/50 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has interconnects protected with an alloy film having a minimum thickness necessary for producing the effect of preventing diffusion of oxygen, copper, etc., formed more uniformly over an entire surface of a substrate with less dependency to the interconnect pattern of the substrate. The semiconductor device includes, embedded interconnects, formed by filling an interconnect material into interconnect recesses formed in an electric insulator on a substrate, and an alloy film, containing 1 to 9 atomic % of tungsten or molybdenum and 3 to 12 atomic % of phosphorus or boron, formed by electroless plating on at least part of the embedded interconnects.

摘要翻译： 半导体器件具有被合金膜保护的互连，所述合金膜具有为了产生防止在衬底的整个表面上更均匀地形成的氧，铜等的扩散所必需的最小厚度，而对衬底的互连图案的依赖性较小 。 半导体器件包括通过将互连材料填充到形成在基板上的电绝缘体中的互连凹槽中形成的嵌入式互连，以及包含1至9原子％的钨或钼和3至12原子％的磷的合金膜， 硼，通过在至少部分嵌入式互连件上的无电镀形成。

公开(公告)号：US20060057839A1

公开(公告)日：2006-03-16

申请号：US11219777

申请日：2005-09-07

申请人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari

发明人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari

IPC分类号： H01L21/4763 ,  H01L21/20

CPC分类号： H01L21/288 ,  C23C18/1619 ,  C23C18/1669 ,  C23C18/32 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76874

摘要： A metal film-forming method of the present invention can form a metal film having different film qualities in the thickness direction, in a continuous manner using a single processing solution. The metal film-forming method including: providing a substrate having embedded interconnects formed in interconnect recesses provided in a surface of the substrate; and forming a metal film, having different film qualities in the thickness direction, on surfaces of the interconnects in a continuous manner by changing the flow state of a processing solution relative to the surface of the substrate while keeping the surface of the substrate in contact with the processing solution.

公开(公告)号：US20100075498A1

公开(公告)日：2010-03-25

申请号：US12629332

申请日：2009-12-02

申请人： Daisuke TAKAGI ,  Xinming Wang ,  Akira Owatari ,  Akira Fukunaga ,  Akihiko Tashiro

发明人： Daisuke TAKAGI ,  Xinming Wang ,  Akira Owatari ,  Akira Fukunaga ,  Akihiko Tashiro

IPC分类号： H01L21/3205

CPC分类号： H01L23/53238 ,  C23C18/50 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has interconnects protected with an alloy film having a minimum thickness necessary for producing the effect of preventing diffusion of oxygen, copper, etc., formed more uniformly over an entire surface of a substrate with less dependency to the interconnect pattern of the substrate. The semiconductor device includes, embedded interconnects, formed by filling an interconnect material into interconnect recesses formed in an electric insulator on a substrate, and an alloy film, containing 1 to 9 atomic % of tungsten or molybdenum and 3 to 12 atomic % of phosphorus or boron, formed by electroless plating on at least part of the embedded interconnects.

摘要翻译： 半导体器件具有被合金膜保护的互连，所述合金膜具有为了产生防止在衬底的整个表面上更均匀地形成的氧，铜等的扩散所必需的最小厚度，而对衬底的互连图案的依赖性较小 。 半导体器件包括通过将互连材料填充到形成在基板上的电绝缘体中的互连凹槽中形成的嵌入式互连，以及包含1至9原子％的钨或钼和3至12原子％的磷的合金膜， 硼，通过在至少部分嵌入式互连件上的无电镀形成。

公开(公告)号：US20080000776A1

公开(公告)日：2008-01-03

申请号：US11896071

申请日：2007-08-29

申请人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari ,  Yukiko Nishioka

发明人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari ,  Yukiko Nishioka

IPC分类号： C25D5/00 ,  B05D3/12

CPC分类号： H01L21/02068 ,  C23C18/1632 ,  C23C18/1689 ,  C23C18/1844 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/67028 ,  H01L21/76849 ,  H01L21/76874 ,  H01L21/76883

摘要： A substrate processing method can securely form a metal film by electroless plating on an exposed surface of a base metal, such as interconnects, with increased throughput and without the formation of voids in the base metal. The substrate processing method includes: cleaning a surface of a substrate having a base metal formed in the surface with a cleaning solution comprising an aqueous solution of a carboxyl group-containing organic acid or its salt and a surfactant as an additive; bringing the surface of the substrate after the cleaning into contact with a processing solution comprising a mixture of the cleaning solution and a solution containing a catalyst metal ion, thereby applying the catalyst to the surface of the substrate; and forming a metal film by electroless plating on the catalyst-applied surface of the substrate.

摘要翻译： 基板处理方法可以通过在贱金属（例如互连）的暴露表面上通过无电解电镀牢固地形成金属膜，具有增加的生产量并且在母材中不形成空隙。 基板处理方法包括：用包含含羧基的有机酸或其盐和表面活性剂的水溶液作为添加剂的清洗溶液清洗在表面形成的基体金属的基材的表面; 使清洗后的基板的表面与包含清洗液和含有催化剂金属离子的溶液的混合物的处理溶液接触，从而将催化剂施加到基板的表面; 以及通过在基板的催化剂涂覆表面上通过无电镀形成金属膜。

公开(公告)号：US07285492B2

公开(公告)日：2007-10-23

申请号：US11039967

申请日：2005-01-24

申请人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari ,  Yukiko Nishioka ,  Tsuyoshi Sahoda

发明人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari ,  Yukiko Nishioka ,  Tsuyoshi Sahoda

IPC分类号： H01L21/44

CPC分类号： H01L21/02068 ,  C23C18/1632 ,  C23C18/1689 ,  C23C18/1844 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/67028 ,  H01L21/76849 ,  H01L21/76874 ,  H01L21/76883

摘要： A substrate processing method can securely form a metal film by electroless plating on an exposed surface of a base metal, such as interconnects, with increased throughput and without the formation of voids in the base metal. The substrate processing method includes: cleaning a surface of a substrate having a base metal formed in the surface with a cleaning solution comprising an aqueous solution of a carboxyl group-containing organic acid or its salt and a surfactant as an additive; bringing the surface of the substrate after the cleaning into contact with a processing solution comprising a mixture of the cleaning solution and a solution containing a catalyst metal ion, thereby applying the catalyst to the surface of the substrate; and forming a metal film by electroless plating on the catalyst-applied surface of the substrate.

摘要翻译： 基板处理方法可以通过在贱金属（例如互连）的暴露表面上通过无电解电镀牢固地形成金属膜，具有增加的生产量并且在母材中不形成空隙。 基板处理方法包括：用包含含羧基的有机酸或其盐和表面活性剂的水溶液作为添加剂的清洗溶液清洗在表面形成的基体金属的基材的表面; 使清洗后的基板的表面与包含清洗液和含有催化剂金属离子的溶液的混合物的处理溶液接触，从而将催化剂施加到基板的表面; 以及通过在基板的催化剂涂覆表面上通过无电镀形成金属膜。

公开(公告)号：US20050022909A1

公开(公告)日：2005-02-03

申请号：US10803949

申请日：2004-03-19

申请人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Akira Fukunaga ,  Akira Owatari

发明人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Akira Fukunaga ,  Akira Owatari

IPC分类号： C23C18/16 ,  C23C18/50 ,  C23C8/80

CPC分类号： C23C18/50 ,  C23C18/1669 ,  C23C18/1676 ,  C23C18/1682 ,  C23C18/1831

摘要： There is provided a substrate processing method which is capable of lowering the initial cost and the running cost of an apparatus, does not require a wide installation space, does not degrade electrical characteristics such as an interconnect resistance and a leakage current, and is capable of efficiently forming a high-quality alloy film on the surface of a metal region. The substrate processing method including; preparing a substrate having a metal region on a surface thereof, performing a pre-plating treatment by bringing a pretreatment liquid into contact with the surface of the substrate to modify the entire surface thereof, removing the pretreatment liquid remaining on the surface of the substrate in a rinsing treatment, performing an electroless plating process on the surface of the substrate to selectively form an alloy film on the surface of the metal region, and post-cleaning the substrate after the electroless plating process and drying the substrate.

摘要翻译： 提供了能够降低设备的初始成本和运行成本的基板处理方法，不需要宽的安装空间，不会降低诸如布线电阻和漏电流的电气特性，并且能够 在金属区域的表面上有效地形成高质量的合金膜。 基板处理方法包括： 制备其表面上具有金属区域的基板，通过使预处理液体与基板的表面接触来进行预镀处理，以改变其整个表面，除去残留在基板表面上的预处理液体 进行漂洗处理，在基板表面进行无电镀处理，在金属区域的表面上选择性地形成合金膜，在无电镀处理后对基板进行后清洗并使基板干燥。

公开(公告)号：US07407821B2

公开(公告)日：2008-08-05

申请号：US10874245

申请日：2004-06-24

申请人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Akira Fukunaga

发明人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Akira Fukunaga

IPC分类号： H01L21/66

CPC分类号： H01L21/76849 ,  C23C18/1608 ,  C23C18/1675 ,  C23C18/1692 ,  C23C18/1879 ,  H01L21/288 ,  H01L21/76864 ,  H01L21/76874 ,  H01L22/12 ,  H01L22/20 ,  H01L2223/54466

摘要： There is provided a substrate processing method and apparatus which can measure and monitor thickness and/or properties of a film formed on a substrate as needed, and quickly correct a deviation in process conditions, and which can therefore stably provide a product of constant quality. A substrate processing method for processing a substrate having a metal and an insulating material exposed on its surface in such a manner that a film thickness of the metal, with an exposed surface of the metal as a reference plane, is selectively or preferentially changed, including measuring a change in the film thickness and/or a film property of the metal during and/or immediately after processing, and monitoring processing and adjusting processing conditions based on results of this measurement.

摘要翻译： 提供了可以根据需要测量和监测在基板上形成的膜的厚度和/或性能的基板处理方法和装置，并且可以快速地校正工艺条件的偏差，因此可以稳定地提供恒定品质的产品。 一种基板处理方法，用于处理具有金属和绝缘材料的基板，所述基板以其金属的暴露表面作为基准面的方式选择性地或优先地改变的金属的膜厚度包括 测量处理期间和/或紧随其后的金属的膜厚度和/或膜性质的变化，以及基于该测量结果的监测处理和调整处理条件。