摘要:
A substrate processing method can securely form a metal film by electroless plating on an exposed surface of a base metal, such as interconnects, with increased throughput and without the formation of voids in the base metal. The substrate processing method includes: cleaning a surface of a substrate having a base metal formed in the surface with a cleaning solution comprising an aqueous solution of a carboxyl group-containing organic acid or its salt and a surfactant as an additive; bringing the surface of the substrate after the cleaning into contact with a processing solution comprising a mixture of the cleaning solution and a solution containing a catalyst metal ion, thereby applying the catalyst to the surface of the substrate; and forming a metal film by electroless plating on the catalyst-applied surface of the substrate.
摘要:
A metal film-forming method of the present invention can form a metal film having different film qualities in the thickness direction, in a continuous manner using a single processing solution. The metal film-forming method including: providing a substrate having embedded interconnects formed in interconnect recesses provided in a surface of the substrate; and forming a metal film, having different film qualities in the thickness direction, on surfaces of the interconnects in a continuous manner by changing the flow state of a processing solution relative to the surface of the substrate while keeping the surface of the substrate in contact with the processing solution.
摘要:
There is provided a substrate processing method and apparatus which can measure and monitor thickness and/or properties of a film formed on a substrate as needed, and quickly correct a deviation in process conditions, and which can therefore stably provide a product of constant quality. A substrate processing method for processing a substrate having a metal and an insulating material exposed on its surface in such a manner that a film thickness of the metal, with an exposed surface of the metal as a reference plane, is selectively or preferentially changed, including measuring a change in the film thickness and/or a film property of the metal during and/or immediately after processing, and monitoring processing and adjusting processing conditions based on results of this measurement.
摘要:
There is provided a substrate processing method and apparatus which can measure and monitor the thickness and/or properties of a film formed on a substrate as needed, and quickly correct a deviation in the process conditions, and which can therefore stably provide a product of constant quality. A substrate processing method for processing a substrate with a metal and an insulating material exposed on its surface in such a manner that the film thickness of the metal portion with the exposed surface of the metal as a reference plane is selectively or preferentially changed, including measuring a change in the film thickness and/or a film property of the metal portion during and/or immediately after processing, and monitoring the processing and adjusting the processing conditions based on the results of measurement.
摘要:
A substrate processing method can securely form a metal film by electroless plating on an exposed surface of a base metal, such as interconnects, with increased throughput and without the formation of voids in the base metal. The substrate processing method includes: cleaning a surface of a substrate having a base metal formed in the surface with a cleaning solution comprising an aqueous solution of a carboxyl group-containing organic acid or its salt and a surfactant as an additive; bringing the surface of the substrate after the cleaning into contact with a processing solution comprising a mixture of the cleaning solution and a solution containing a catalyst metal ion, thereby applying the catalyst to the surface of the substrate; and forming a metal film by electroless plating on the catalyst-applied surface of the substrate.
摘要:
A semiconductor device has interconnects protected with an alloy film having a minimum thickness necessary for producing the effect of preventing diffusion of oxygen, copper, etc., formed more uniformly over an entire surface of a substrate with less dependency to the interconnect pattern of the substrate. The semiconductor device includes, embedded interconnects, formed by filling an interconnect material into interconnect recesses formed in an electric insulator on a substrate, and an alloy film, containing 1 to 9 atomic % of tungsten or molybdenum and 3 to 12 atomic % of phosphorus or boron, formed by electroless plating on at least part of the embedded interconnects.
摘要:
The present invention provides an interconnects-forming method and an interconnects-forming apparatus which can minimize the lowering of processing accuracy in etching, minimize light exposure processing for the formation of interconnect recesses in the production of multi-level interconnects, improve the electromigration resistance of interconnects without impairing the electrical properties of the interconnects, and enhance the reliability of the device. The interconnects-forming method, includes providing interconnect recesses in an insulating film formed in a surface of a substrate; embedding an interconnect material in the interconnect recesses while forming a metal film of the interconnect material on a surface of the insulating film; removing an extra metal material other than the metal material in the interconnect recesses and flattening the substrate surface, thereby forming interconnects; forming a first protective film of a conductive material selectively on exposed surfaces of the interconnects; forming a second protective film on the surface of the substrate having the thus-formed first protective film; forming an interlevel insulating film on the surface of the substrate having the thus-formed second protective film; and flattening a surface of the interlevel insulating film.
摘要:
The present invention provides an interconnects-forming method and an interconnects-forming apparatus which can minimize the lowering of processing accuracy in etching, minimize light exposure processing for the formation of interconnect recesses in the production of multi-level interconnects, improve the electromigration resistance of interconnects without impairing the electrical properties of the interconnects, and enhance the reliability of the device. The interconnects-forming method, includes providing interconnect recesses in an insulating film formed in a surface of a substrate; embedding an interconnect material in the interconnect recesses while forming a metal film of the interconnect material on a surface of the insulating film; removing an extra metal material other than the metal material in the interconnect recesses and flattening the substrate surface, thereby forming interconnects; forming a first protective film of a conductive material selectively on exposed surfaces of the interconnects; forming a second protective film on the surface of the substrate having the thus-formed first protective film; forming an interlevel insulating film on the surface of the substrate having the thus-formed second protective film; and flattening a surface of the interlevel insulating film.
摘要:
A metal film-forming method of the present invention can form a metal film having different film qualities in the thickness direction, in a continuous manner using a single processing solution. The metal film-forming method including: providing a substrate having embedded interconnects formed in interconnect recesses provided in a surface of the substrate; and forming a metal film, having different film qualities in the thickness direction, on surfaces of the interconnects in a continuous manner by changing the flow state of a processing solution relative to the surface of the substrate while keeping the surface of the substrate in contact with the processing solution.
摘要:
The present invention provides an interconnects-forming method and an interconnects-forming apparatus which can minimize the lowering of processing accuracy in etching, light exposure or the like processing for the formation of interconnect recesses in the production of multi-level interconnects, can improve the electromigration resistance of interconnects without impairing the electrical properties of the interconnects, and can enhance the reliabilityof the device. The interconnects-formingmethod, including: providing interconnect recesses in an insulating film formed in a surface of a substrate; embedding an interconnect material in the interconnect recesses while forming a metal film of the interconnect material on a surface of the insulating film; removing an extra metal material other than the metal material in the interconnect recesses and flattening the substrate surface, thereby forming interconnects; forming a first protective film of a conductive material selectively on exposed surfaces of the interconnects; forming a second protective film on the surface of the substrate having the thus-formed first protective film; forming an interlevel insulating film on the surface of the substrate having the thus-formed second protective film; and flattening a surface of the interlevel insulating film.