公开(公告)号：US07773646B2

公开(公告)日：2010-08-10

申请号：US12280603

申请日：2007-03-14

申请人： Daisuke Ueda ,  Masaaki Yuri ,  Katsumi Sugiura ,  Kenichi Matsuda

发明人： Daisuke Ueda ,  Masaaki Yuri ,  Katsumi Sugiura ,  Kenichi Matsuda

IPC分类号： H01S3/00

CPC分类号： H01S5/042

摘要： A semiconductor light source includes a light-emitting device 101 having a plurality of semiconductor layers made of nitride semiconductors, and a drive circuit 102 for driving the light-emitting device 101. The drive circuit 102 performs forward drive operation, in which a forward current is supplied to the light-emitting device to make the light-emitting device 101 emit light, and reverse drive operation, in which a reverse bias is applied to the light-emitting device. The magnitude of the reverse bias is limited by the value of a reverse current flowing through the light-emitting device.

摘要翻译： 半导体光源包括具有由氮化物半导体构成的多个半导体层的发光器件101和用于驱动发光器件101的驱动电路102.驱动电路102执行正向驱动操作，其中正向电流 被提供给发光装置以使发光装置101发光，并且对发光装置施加反向偏压的反向驱动操作。 反向偏压的大小受流过发光器件的反向电流的值的限制。

公开(公告)号：US20090014752A1

公开(公告)日：2009-01-15

申请号：US12280603

申请日：2007-03-14

申请人： Daisuke Ueda ,  Masaaki Yuri ,  Katsumi Sugiura ,  Kenichi Matsuda

发明人： Daisuke Ueda ,  Masaaki Yuri ,  Katsumi Sugiura ,  Kenichi Matsuda

IPC分类号： H01L33/00

CPC分类号： H01S5/042

摘要： A semiconductor light source includes a light-emitting device 101 having a plurality of semiconductor layers made of nitride semiconductors, and a drive circuit 102 for driving the light-emitting device 101. The drive circuit 102 performs forward drive operation, in which a forward current is supplied to the light-emitting device to make the light-emitting device 101 emit light, and reverse drive operation, in which a reverse bias is applied to the light-emitting device. The magnitude of the reverse bias is limited by the value of a reverse current flowing through the light-emitting device.

摘要翻译： 半导体光源包括具有由氮化物半导体构成的多个半导体层的发光器件101和用于驱动发光器件101的驱动电路102.驱动电路102执行正向驱动操作，其中正向电流 被提供给发光装置以使发光装置101发光，并且对发光装置施加反向偏压的反向驱动操作。 反向偏压的大小受流过发光器件的反向电流的值的限制。

公开(公告)号：US06501090B2

公开(公告)日：2002-12-31

申请号：US10044979

申请日：2002-01-15

申请人： Akira Furuya ,  Chikashi Anayama ,  Katsumi Sugiura ,  Kensei Nakao ,  Taro Hasegawa

发明人： Akira Furuya ,  Chikashi Anayama ,  Katsumi Sugiura ,  Kensei Nakao ,  Taro Hasegawa

IPC分类号： H01L2906

CPC分类号： B82Y20/00 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01S5/2201 ,  H01S5/2238 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/34326 ,  H01S5/3436 ,  H01S2301/173 ,  H01S2304/04

摘要： In the S3-type semiconductor laser, when an angle of a first growth profile line to the first principal plane, the first growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the first layer of the first conduction type cladding layer is &thgr;1, an angle of a second growth profile line to the first principal plane, the second growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the second layer of the first conduction type cladding layer is &thgr;2, an angle of a third growth profile line to the first principal plane, the third growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the third layer of the first conduction type cladding layer is &thgr;3, and an angle of a fourth growth profile line to the first principal plane, the fourth growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the fourth layer of the first conduction type cladding layer is &thgr;4, relationships &thgr;1 &thgr;3, &thgr;3

摘要翻译： 在S3型半导体激光器中，当第一生长曲线与第一主平面的角度为第一生长曲线时，连接第一生长轮廓线的第一生长曲线和第一生长曲线 导电型包层为θ1，第二生长曲线与第一主平面的角度，第二生长曲线，连接第一导电类型的第二层的上倾斜面和下倾斜面的下侧线 包层是θ2，第三生长轮廓线与第一主平面的角度，第三生长轮廓线连接第一导电型包层的第三层的上倾斜平面和下倾斜平面的下侧线 是θ3，以及第四生长曲线与第一主平面的角度，第四生长曲线连接着上部的各个下边线 r倾斜面和第一导电型包层的第四层的下倾斜面是θ4，可以满足关系θ1，θ2，θ3，θ3。

公开(公告)号：US20110058584A1

公开(公告)日：2011-03-10

申请号：US12312150

申请日：2008-11-12

申请人： Hiroshi Ohno ,  Yoshiaki Hasegawa ,  Katsumi Sugiura

发明人： Hiroshi Ohno ,  Yoshiaki Hasegawa ,  Katsumi Sugiura

IPC分类号： H01S5/22 ,  H01L21/30

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/2022 ,  H01S5/34333 ,  H01S2301/18

摘要： A semiconductor laser device includes a semiconductor multilayer structure 12 having a stripe-shaped ridge waveguide portion 12a extending in a direction intersecting a cavity end face. A dielectric layer 16 is formed on the semiconductor multilayer structure 12 to cover at least part of both side faces of the ridge waveguide portion 12a. Light absorption layers 17 are formed on both sides of the ridge waveguide portion 12a on the semiconductor multilayer structure 12 so as to be spaced from the ridge waveguide portion 12a and the cavity end face.

摘要翻译： 半导体激光器件包括半导体多层结构12，其具有在与腔体端面相交的方向上延伸的条形脊状波导部分12a。 在半导体多层结构体12上形成电介质层16，以覆盖脊状波导部分12a的两个侧面的至少一部分。 在半导体多层结构体12的脊状波导部12a的两侧形成有光吸收层17，与脊部波导部12a和腔侧端面间隔开。

公开(公告)号：US20070110112A1

公开(公告)日：2007-05-17

申请号：US11600106

申请日：2006-11-16

申请人： Katsumi Sugiura

发明人： Katsumi Sugiura

IPC分类号： H01S5/00 ,  H01S3/04

CPC分类号： H01S5/32341

摘要： A group III nitride semiconductor light emitting device according to the present invention includes an immediate layer formed of AlxGa1-x-yInyN (0

摘要翻译： 根据本发明的III族氮化物半导体发光器件包括由Al x Ga 1-x N y N（N） 有源层与包覆层之间的电阻值为0

公开(公告)号：US06804973B2

公开(公告)日：2004-10-19

申请号：US10637394

申请日：2003-08-08

申请人： Katsumi Sugiura

发明人： Katsumi Sugiura

IPC分类号： B60H132

CPC分类号： B60H1/3226 ,  B60H1/0075 ,  B60H1/323

摘要： In a vehicle air conditioner including a front automatic air-conditioning unit and a rear manual air-conditioning unit, an air-conditioning control unit changes a correction value of a target air temperature to be blown into a front seat area of a passenger compartment based on an outside air temperature detected by an outside temperature sensor when the rear manual air-conditioning unit operates. Specifically, in a low outside air temperature, the target air temperature for the front seat area is decreased by changing the correction value at a minus side. Accordingly, even a rear heater of the rear manual air-conditioning unit is operated during operation of the front air-conditioning unit, an air temperature blown toward the front seat area in the passenger compartment can be controlled to a set temperature.

摘要翻译： 在具有前方自动空调机和后方手动空调机的车辆用空调机中，空气调节单元将要吹送的目标空气温度的修正值变更为乘客室的前排座椅区域 在后方手动空调机组运转时，由外部温度传感器检测到的外部空气温度。 具体而言，在低的外部空气温度下，通过改变负侧的校正值来减小前座区域的目标空气温度。 因此，即使后方手动空调机的后部加热器在前方空调机组运转时也能够进行操作，所以能够将向乘客室内前座部区域吹出的空气温度控制在设定温度。

公开(公告)号：US07709848B2

公开(公告)日：2010-05-04

申请号：US11600106

申请日：2006-11-16

申请人： Katsumi Sugiura

发明人： Katsumi Sugiura

IPC分类号： H01L33/06 ,  H01L33/32

CPC分类号： H01S5/32341

摘要： A group III nitride semiconductor light emitting device according to the present invention includes an intermediate layer formed of AlxGa1-x-yInyN(0

摘要翻译： 根据本发明的III族氮化物半导体发光器件包括由有源层和包层之间的Al x Ga 1-x-y In y N（0

公开(公告)号：US06686217B2

公开(公告)日：2004-02-03

申请号：US10046217

申请日：2002-01-16

申请人： Katsumi Sugiura ,  Chikashi Anayama ,  Akira Furuya

发明人： Katsumi Sugiura ,  Chikashi Anayama ,  Akira Furuya

IPC分类号： H01L2100

CPC分类号： H01L21/2258 ,  H01S5/162

摘要： A method of forming a compound semiconductor device. The method includes the steps of depositing a film that contains zinc oxide and silicon oxide to contain the zinc oxide by 70 wt % or more on compound semiconductor layer as a diffusion source, and diffusing zinc from the diffusion source into the compound semiconductor layer by annealing. Accordingly, there can be provided a compound semiconductor device manufacturing method containing the step of diffusing zinc into compound semiconductor layers, capable of deepening a Zn diffusion position from a ZnO/SiO2 film to such extent that COD endurance of laser end face window structures can be increased rather than the prior art.

摘要翻译： 一种形成化合物半导体器件的方法。 该方法包括以下步骤：将化合物半导体层上含有氧化锌和氧化硅的膜含有70重量％以上作为扩散源，通过退火将锌从扩散源扩散到化合物半导体层中 。 因此，可以提供一种化合物半导体器件制造方法，其包括将锌扩散到化合物半导体层中的步骤，能够使ZnO扩散位置从ZnO / SiO 2膜深化到激光端面窗结构的COD耐久性 而不是现有技术。

公开(公告)号：US4131838A

公开(公告)日：1978-12-26

申请号：US823023

申请日：1977-08-09

申请人： Kunihiko Etoh ,  Katsumi Sugiura

发明人： Kunihiko Etoh ,  Katsumi Sugiura

IPC分类号： G01D5/243 ,  G01B7/00 ,  G01D5/245 ,  G05B19/23 ,  G05B19/28

CPC分类号： G05B19/232

摘要： A device which detects the amount of displacement of a movable member moved by a feed device, and which outputs pulse signals corresponding to the amount of such displacement. The displacement amount detecting device includes a reference pulse generator for generating a train of reference pulses at a predetermined frequency, a carrier counter which counts the reference pulses from the pulse generator and outputs carrier signals, a dummy counter which counts the reference pulses from the pulse generator and which outputs a dummy signal, a transducer which receives the carrier signals and which generates a phase modulation signal proportional to the amount of displacement, a phase comparator which compares the modulation signal with the dummy signal and which outputs a first gate signal while the phase of the modulation signal leads the phase of the dummy signal and a second gate signal while the phase of the modulation signal lags the phase of the dummy signal, and input and output gating circuitry resonsive to the first and second gate signals. The input gating circuitry interrupts transmission of the reference pulses to the carrier counter while receiving the first gate signal and interrupts transmission of the reference pulses to the dummy counter while receiving the second gate signal. Such interruption is continued until the phase of the modulation signal coincides with that of the dummy signal, so that the reference pulses output from the output gating circuitry during such interruption correspond to the displacement amount of the movable member.

摘要翻译： 一种检测由进给装置移动的可移动部件的位移量并输出与这种位移量对应的脉冲信号的装置。 位移量检测装置包括用于产生预定频率的参考脉冲串的参考脉冲发生器，对来自脉冲发生器的参考脉冲进行计数并输出载波信号的载波计数器，从脉冲计数参考脉冲的虚拟计数器 发送器，其输出虚拟信号;接收载波信号并产生与位移量成比例的相位调制信号的换能器;相位比较器，其将调制信号与虚拟信号进行比较，并输出第一门信号，同时 调制信号的相位导致虚拟信号的相位和第二栅极信号，同时调制信号的相位滞后于虚拟信号的相位，并且输入和输出门控电路与第一和第二门信号相关。 输入门控电路在接收到第一门信号的同时中断向载波计数器发送参考脉冲，并且在接收到第二门信号时中断向伪计数器发送参考脉冲。 这种中断持续到调制信号的相位与虚拟信号的相位一致，从而在这种中断期间从输出选通电路输出的基准脉冲对应于可移动部件的位移量。