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46 条记录 (耗时 0.019 秒)

    Radiation sensing and charge storage devices
    1.
    发明授权
    Radiation sensing and charge storage devices 失效
    辐射传感和电荷存储装置

    公开(公告)号：US4024562A

    公开(公告)日：1977-05-17

    申请号：US680729

    申请日：1976-04-27

    申请人： Dale M. Brown ,  Mario Ghezzo ,  Marvin Garfinkel

    发明人： Dale M. Brown ,  Mario Ghezzo ,  Marvin Garfinkel

    IPC分类号： H01L27/108 ,  H01L27/148 ,  H01L29/78 ,  H01L27/14

    CPC分类号： H01L27/108 ,  H01L27/14862

    摘要： An array of radiation sensing devices, each including a pair of conductor-insulator-semiconductor capacitors, arranged in rows and columns in which the row stripes or lines form row connected capacitors in relation to selected surface regions of a semiconductor substrate and in which the column stripes or lines form column connected capacitors in relation to the selected surface regions. Each of the row stripes overlies first portions of the selected surface regions of a respective row. Each of the column stripes overlies entirely the selected surface regions of a respective column.

    摘要翻译： 辐射检测装置阵列，每个包括一对导体 - 绝缘体 - 半导体电容器，其布置成行和列，其中行条或线相对于半导体衬底的选定的表面区域形成行连接的电容器，并且其中列 条纹或线条相对于选定的表面区域形成列连接的电容器。 行条中的每一行都覆盖相应行的所选表面区域的第一部分。 每个列条都完全覆盖相应列的选定表面区域。

    Radiation sensing and charge storage devices
    2.
    发明授权
    Radiation sensing and charge storage devices 失效
    辐射传感和电荷存储装置

    公开(公告)号：US3988613A

    公开(公告)日：1976-10-26

    申请号：US573842

    申请日：1975-05-02

    申请人： Dale M. Brown ,  Mario Ghezzo ,  Marvin Garfinkel

    发明人： Dale M. Brown ,  Mario Ghezzo ,  Marvin Garfinkel

    IPC分类号： H01L27/108 ,  H01L27/148 ,  H01L27/14

    CPC分类号： H01L27/108 ,  H01L27/14862

    摘要： An array of radiation sensing devices, each including a pair of conductor-insulator-semiconductor capacitors, arranged in rows and columns in which the row stripes or lines form row connected capacitors in relation to selected surface regions of a semiconductor substrate and in which the column stripes or lines form column connected capacitors in relation to the selected surface regions. Each of the row stripes overlies first portions of the selected surface regions of a respective row. Each of the column stripes overlies entirely the selected surface regions of a respective column.

    摘要翻译： 辐射检测装置阵列，每个包括一对导体 - 绝缘体 - 半导体电容器，其布置成行和列，其中行条或线相对于半导体衬底的选定的表面区域形成行连接的电容器，并且其中列 条纹或线条相对于选定的表面区域形成列连接的电容器。 行条中的每一行都覆盖相应行的所选表面区域的第一部分。 每个列条都完全覆盖相应列的选定表面区域。

    Silicon carbide junction field effect transistor device for high temperature applications
    4.
    发明授权
    Silicon carbide junction field effect transistor device for high temperature applications 失效
    碳化硅结型场效应晶体管器件用于高温应用

    公开(公告)号：US5510632A

    公开(公告)日：1996-04-23

    申请号：US439328

    申请日：1995-05-11

    申请人： Dale M. Brown ,  Mario Ghezzo

    发明人： Dale M. Brown ,  Mario Ghezzo

    IPC分类号： H01L21/04 ,  H01L29/10 ,  H01L29/808 ,  H01L31/0312 ,  H01L29/80 ,  H01L31/112

    CPC分类号： H01L29/66068 ,  H01L29/1066 ,  H01L29/808 ,  Y10S438/931

    摘要： A silicon carbide (SiC) junction field effect transistor (JFET) device is fabricated upon a substrate layer, such as a p type conductivity SiC substrate, using ion implantation for the source and drain areas. A SiC p type conductivity layer is epitaxially grown on the substrate. A SiC n type conductivity layer is formed by ion implantation or epitaxial deposition upon the p type layer. The contacting surfaces of the p and n type layers form a junction. A p+ type gate area supported by the n type layer is formed either by the process of ion implantation or the process of depositing and patterning a second p type layer. The source and drain areas are heavily doped to n+ type conductivity by implanting donor ions in the n type layer.

    摘要翻译： 碳化硅（SiC）结场效应晶体管（JFET）器件使用离子注入制造在诸如p型导电性SiC衬底的衬底层上，用于源极和漏极区域。 在衬底上外延生长SiC p型导电层。 在p型层上通过离子注入或外延沉积形成SiC n型导电层。 p型和n型层的接触表面形成结。 由n型层支撑的p +型栅极区域通过离子注入的过程或第二p型层的沉积和图案化处理而形成。 通过将供体离子注入到n型层中，源区和漏区被重掺杂到n +型导电性。

    Method of making a silicon carbide junction field effect transistor device for high temperature applications
    5.
    发明授权
    Method of making a silicon carbide junction field effect transistor device for high temperature applications 失效
    制造用于高温应用的碳化硅结型场效应晶体管器件的方法

    公开(公告)号：US5378642A

    公开(公告)日：1995-01-03

    申请号：US48448

    申请日：1993-04-19

    申请人： Dale M. Brown ,  Mario Ghezzo

    发明人： Dale M. Brown ,  Mario Ghezzo

    IPC分类号： H01L21/04 ,  H01L29/10 ,  H01L29/808 ,  H01L21/266

    CPC分类号： H01L29/66068 ,  H01L29/1066 ,  H01L29/808 ,  Y10S438/931

    摘要： A silicon carbide (SiC) junction field effect transistor (JFET) device is fabricated upon a substrate layer, such as a p type conductivity SiC substrate, using ion implantation for the source and drain areas. A SiC p type conductivity layer is epitaxially grown on the substrate. A SiC n type conductivity layer is formed by ion implantation or epitaxial deposition upon the p type layer. The contacting surfaces of the p and n type layers form a junction. A p+ type gate area supported by the n type layer is formed either by the process of ion implantation or the process of depositing and patterning a second p type layer. The source and drain areas are heavily doped to n+ type conductivity by implanting donor ions in the n type layer.

    摘要翻译： 碳化硅（SiC）结场效应晶体管（JFET）器件使用离子注入制造在诸如p型导电性SiC衬底的衬底层上，用于源极和漏极区域。 在衬底上外延生长SiC p型导电层。 在p型层上通过离子注入或外延沉积形成SiC n型导电层。 p型和n型层的接触表面形成结。 由n型层支撑的p +型栅极区域通过离子注入的过程或第二p型层的沉积和图案化处理而形成。 通过将供体离子注入到n型层中，源区和漏区被重掺杂到n +型导电性。

    Low capacitance X-ray radiation detector
    8.
    发明授权
    Low capacitance X-ray radiation detector 失效
    低电容X射线辐射探测器

    公开(公告)号：US5187380A

    公开(公告)日：1993-02-16

    申请号：US865515

    申请日：1992-04-09

    申请人： Gerald J. Michon ,  Dale M. Brown ,  Marvin Garfinkel ,  Dominic A. Cusano

    发明人： Gerald J. Michon ,  Dale M. Brown ,  Marvin Garfinkel ,  Dominic A. Cusano

    IPC分类号： A61B6/03 ,  G01T1/24 ,  H01L27/14 ,  H01L27/144 ,  H01L31/0232 ,  H01L31/0352 ,  H01L31/09 ,  H01L31/115 ,  H01L31/118

    CPC分类号： H01L31/115 ,  H01L27/1443 ,  H01L31/02322 ,  H01L31/03529 ,  H01L31/1185 ,  Y02E10/50

    摘要： A low capacitance radiation detector comprises a monocrystalline silicon substrate heavily doped to N type conductivity with a more lightly doped N type conductivity epitaxial layer formed on the substrate. A plurality of heavily doped N type upper surface layer segments are formed in the epitaxial layer. A patterned region of the epitaxial layer, heavily doped to P type conductivity and in the shape of parallel stripes joined at each end by a respective stripe perpendicular to the parallel stripes, is formed in the epitaxial layer and situated between adjacent ones of the upper surface layer segments, with each stripe extending into the epitaxial layer deeper than, and separated from, the upper surface layer segments so as to form a minority charge carrier-collecting PN junction with the epitaxial layer. The parallel stripes are spaced apart from each other by a distance smaller than or comparable to the minority charge carrier recombination diffusion length for the epitaxial layer, and the epitaxial layer thickness is smaller than or comparable to the minority charge carrier recombination diffusion length. In a second embodiment, the epitaxial layer has beveled edges and the heavily doped N type upper surface layer segments formed in the epitaxial layer extend over the beveled edges.

    摘要翻译： 低电容辐射检测器包括重掺杂到N型导电性的单晶硅衬底，在衬底上形成更轻掺杂的N型导电外延层。 在外延层中形成多个重掺杂的N型上表面层段。 在外延层中形成外延层的图案化区域，其重掺杂为P型导电性，并且在每一端由垂直于平行条纹的相应条带连接的平行条形状，并且位于相邻的上表面之间 每个条带延伸到外延层中比上表面层段更深且分离，以便与外延层形成少数电荷载流子收集PN结。 平行条纹彼此间隔开距离外延层的少数电荷载流子复合扩散长度的距离或相当于外延层厚度小于或与少数电荷载流子复合扩散长度相当的距离。 在第二实施例中，外延层具有倾斜边缘，并且形成在外延层中的重掺杂N型上表面层段在倾斜边缘上延伸。

    Radiation detector
    9.
    发明授权
    Radiation detector 失效
    辐射探测器

    公开(公告)号：US4146904A

    公开(公告)日：1979-03-27

    申请号：US861673

    申请日：1977-12-19

    申请人： Richard D. Baertsch ,  Dale M. Brown ,  Marvin Garfinkel

    发明人： Richard D. Baertsch ,  Dale M. Brown ,  Marvin Garfinkel

    IPC分类号： G01T1/24 ,  G01T1/20 ,  H01L31/0232 ,  H01L31/09 ,  H01L31/10 ,  H01L31/103 ,  H01L27/14 ,  G01T1/22

    CPC分类号： H01L31/02322 ,  G01T1/2018 ,  H01L31/103

    摘要： In a substrate of semiconductor material of one conductivity type and high resistivity, a thin layer of the same conductivity and low resistivity is provided adjacent a major surface of the substrate. A region of opposite conductivity type is provided in the substrate adjacent the major surface to form a PN junction therewith spaced adjacent to the thin layer. Zero bias is provided on the PN junction. Minority charge carriers generated in the semiconductor substrate underlying the thin layer in response to applied radiation diffuse to the region of opposite conductivity type and are sensed.

    摘要翻译： 在一种导电类型和高电阻率的半导体材料的衬底（11）中，在衬底的主表面（15）附近提供具有相同导电性和低电阻率的薄层（13,14）。 相邻导电类型的区域（21）设置在邻近主表面的衬底中，以形成邻近薄层的PN结（22）。 在PN结上提供零偏置。 响应于施加的辐射而在薄层下面的半导体衬底中产生的少数电荷载流子扩散到相反导电类型的区域并被感测。

    Radiation detector
    10.
    发明授权
    Radiation detector 失效
    辐射检测器

    公开(公告)号：US4140909A

    公开(公告)日：1979-02-20

    申请号：US861674

    申请日：1977-12-19

    申请人： Dale M. Brown ,  Marvin Garfinkel

    发明人： Dale M. Brown ,  Marvin Garfinkel

    IPC分类号： G01T1/24 ,  G01T1/20 ,  H01L31/0232 ,  H01L31/09 ,  H01L31/103 ,  H01L31/113 ,  G01T1/22

    CPC分类号： G01T1/2018 ,  H01L31/02322 ,  H01L31/103 ,  H01L31/113

    摘要： A layer of transparent conductive material insulatingly overlies a major surface of a substrate of semiconductor material to provide a CIS (conductor-insulator-semiconductor) capacitor. A region of opposite conductivity type is provided in the substrate adjacent the major surface of the substrate. The capacitor is biased in accumulation and the region of opposite conductivity type is reversely biased with respect to the substrate. Minority charge carriers generated in the semiconductor substrate underlying the conductive layer in response to applied radiation diffuse to the region of opposite conductivity type and are sensed.

    摘要翻译： {PG，1 A透明导电材料层绝缘地覆盖在半导体材料的衬底的主表面上，以提供CIS（导体 - 绝缘体 - 半导体）电容器。 在衬底的与衬底的主表面相邻的位置处提供相反导电类型的区域。 电容器被偏置在积聚中，相反导电类型的区域相对于衬底反向偏置。 响应于施加的辐射在导电层下面的半导体衬底中产生的少数电荷载流子扩散到相反导电类型的区域并被感测。