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    Method and apparatus for forming metal interconnects
    1.
    发明授权
    Method and apparatus for forming metal interconnects 失效
    用于形成金属互连的方法和装置

    公开(公告)号：US06372633B1

    公开(公告)日：2002-04-16

    申请号：US09111657

    申请日：1998-07-08

    申请人： Dan Maydan ,  Ashok K. Sinha ,  Zheng Xu ,  Liang-Yu Chen ,  Roderick Craig Mosely ,  Daniel Carl ,  Diana Xiaobing Ma ,  Yan Ye ,  Wen Chiang Tu

    发明人： Dan Maydan ,  Ashok K. Sinha ,  Zheng Xu ,  Liang-Yu Chen ,  Roderick Craig Mosely ,  Daniel Carl ,  Diana Xiaobing Ma ,  Yan Ye ,  Wen Chiang Tu

    IPC分类号： H01L214763

    CPC分类号： H01L21/76838 ,  H01L21/32136 ,  H01L21/76885

    摘要： The present invention provides a method and apparatus for forming reliable interconnects in which the overlap of the line over the plug or via is minimized or eliminated. In one aspect, a barrier plug comprised of a conductive material, such as tungsten, is deposited over the via to provide an etch stop during line etching and to prevent diffusion of the metal, such as copper, into the surrounding dielectric material if the line is misaligned over the via. Additionally, the barrier plug prevents an overall reduction in resistance of the interconnect and enables reactive ion etching to be employed to form the metal line. In another aspect, reactive ion etching techniques are employed to selectively etch the metal line and the barrier layer to provide a controlled etching process which exhibits selectivity for the metal line, then the barrier and then the via or plug.

    摘要翻译： 本发明提供了一种用于形成可靠互连的方法和装置，其中使插塞或通孔上的线重叠最小化或消除。 在一个方面，由诸如钨的导电材料构成的阻挡塞沉积在通孔上，以在线蚀刻期间提供蚀刻停止并且防止金属（例如铜）扩散到周围的介电材料中，如果线 在通道上不对齐。 此外，阻挡塞防止互连的电阻的总体降低，并且能够使用反应离子蚀刻来形成金属线。 在另一方面，使用反应离子蚀刻技术来选择性地蚀刻金属线和阻挡层，以提供对金属线，然后是屏障，然后是通孔或插塞的选择性的受控蚀刻工艺。

    Integrated process for copper via filling using a magnetron and target producing highly energetic ions
    2.
    发明授权
    Integrated process for copper via filling using a magnetron and target producing highly energetic ions 失效
    通过使用磁控管进行填充的铜的集成工艺和产生高能离子的靶

    公开(公告)号：US06277249B1

    公开(公告)日：2001-08-21

    申请号：US09518180

    申请日：2000-03-02

    申请人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Sankaram Athreya ,  Wei D. Wang ,  Ashok K. Sinha

    发明人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Sankaram Athreya ,  Wei D. Wang ,  Ashok K. Sinha

    IPC分类号： C23C1435

    CPC分类号： H01L21/76844 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3455 ,  H01J37/3458 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1089

    摘要： A target and magnetron for a plasma sputter reactor. The target has an annular trough facing the wafer to be sputter coated. Various types of magnetic means positioned around the trough create a magnetic field supporting a plasma extending over a large volume of the trough. For example, the magnetic means may include magnets disposed on one side within a radially inner wall of the trough and on another side outside of a radially outer wall of the trough to create a magnetic field extending across the trough, to thereby support a high-density plasma extending from the top to the bottom of the trough. The large plasma volume increases the probability that the sputtered metal atoms will become ionized. The magnetic means may include a magnetic coil, may include additional magnets in back of the trough top wall to increase sputtering there, and may include confinement magnets near the bottom of the trough sidewalls. The magnets in back of the top wall may have an outer magnet surrounding an inner magnet of the opposite polarity. The high aspect ratio of the trough also reduces asymmetry in coating the sidewalls of a deep hole at the edge of the wafer. An integrated copper via filling process includes a first step of highly ionized sputter deposition of copper, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and electroplating copper into the hole to complete the metallization.

    摘要翻译： 用于等离子体溅射反应器的靶和磁控管。 目标具有面向待溅射涂覆的晶片的环形槽。 位于槽周围的各种磁性装置形成一个支撑等离子体的磁场，该等离子体延伸在大容积的槽上。 例如，磁性装置可以包括设置在槽的径向内壁中的一侧上并且在槽的径向外壁外侧的另一侧上的磁体，以产生延伸穿过槽的磁场， 密度等离子体从槽的顶部延伸到底部。 大的等离子体体积增加了溅射的金属原子将被电离的可能性。 磁性装置可以包括磁性线圈，可以在槽顶壁的后面包括另外的磁体，以在那里增加溅射，并且可以包括靠近槽侧壁底部的约束磁体。 顶壁后面的磁体可以具有围绕相反极性的内磁体的外磁体。 槽的高纵横比也降低了在晶片边缘涂覆深孔侧壁的不对称性。 集成的铜通孔填充工艺包括铜的高度电离溅射沉积的第一步骤，更中性的，更低能量的溅射沉积铜以完成种子层的第二步骤，以及将铜电镀到孔中以完成金属化。

    Vault shaped target and magnetron operable in two sputtering modes
    5.
    发明授权
    Vault shaped target and magnetron operable in two sputtering modes 失效
    拱形靶和磁控管可在两种溅射模式下工作

    公开(公告)号：US06451177B1

    公开(公告)日：2002-09-17

    申请号：US09703601

    申请日：2000-11-01

    申请人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Wei Wang ,  Ashok K. Sinha

    发明人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Wei Wang ,  Ashok K. Sinha

    IPC分类号： C23C1435

    CPC分类号： H01L21/76844 ,  C23C14/046 ,  C23C14/165 ,  C23C14/185 ,  C23C14/225 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3458 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1089

    摘要： A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. Preferably, the magnetron includes annular magnets of opposed polarities disposed behind the two vault sidewalls and a small closed unbalanced magnetron of nested magnets of opposed polarities scanned along the vault roof. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.

    摘要翻译： 用于等离子体溅射反应器的靶和磁控管。 目标具有面向待溅射涂覆的晶片的环形保险库。 位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。 优选地，磁控管包括设置在两个拱顶侧壁之后的相对极性的环形磁体和沿拱顶顶部扫描的具有相对极性的嵌套磁体的小型闭合不平衡磁控管。 与本发明的反应器或其它反应器的集成铜通孔填充方法包括铜的高度电离溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，更中立的，更低的 铜的完全溅射沉积以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。 前两个步骤也可以与阻隔金属一起使用。

    Multi-step magnetron sputtering process
    7.
    发明授权
    Multi-step magnetron sputtering process 有权
    多级磁控溅射工艺

    公开(公告)号：US06991709B2

    公开(公告)日：2006-01-31

    申请号：US10934231

    申请日：2004-09-03

    申请人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Wei Wang ,  Ashok K. Sinha

    发明人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Wei Wang ,  Ashok K. Sinha

    IPC分类号： C23C14/34

    CPC分类号： H01L21/76844 ,  C23C14/046 ,  C23C14/165 ,  C23C14/185 ,  C23C14/225 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3458 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1089

    摘要： A multi-step sputtering process in plasma sputter reactor having target and magnetron operable in two modes, for example, in a substrate sputter etch and a substrate sputter deposition. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.

    摘要翻译： 在等离子体溅射反应器中的多步骤溅射工艺，其具有可在两种模式中操作的靶和磁控管，例如在衬底溅射蚀刻和衬底溅射沉积中。 目标具有面向待溅射涂覆的晶片的环形保险库。 位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。 与本发明的反应器或其它反应器的集成铜通孔填充方法包括铜的高度电离溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，更中立的，更低的 铜的完全溅射沉积以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。 前两个步骤也可以与阻隔金属一起使用。

    System and method for conditional task switching during ordering scope transitions
    8.
    发明授权
    System and method for conditional task switching during ordering scope transitions 有权
    在订购范围转换期间进行条件任务切换的系统和方法

    公开(公告)号：US09372724B2

    公开(公告)日：2016-06-21

    申请号：US14231789

    申请日：2014-04-01

    申请人： Zheng Xu ,  Tommi M. Jokinen ,  William C. Moyer

    发明人： Zheng Xu ,  Tommi M. Jokinen ,  William C. Moyer

    IPC分类号： G06F9/48

    CPC分类号： G06F9/4843 ,  G06F9/461 ,  G06F9/48

    摘要： A data processing system includes a processor core and a hardware module. The processor core performs tasks on data packets. The hardware module stores a first ordering scope identifier at a first storage location of the ordering scope manager. The first ordering scope identifier indicates a first ordering scope that a first task is operating in. The ordering scope manager increments the first ordering scope identifier to create a new ordering scope identifier. In response to determining that the processor core is authorized to transition the first task from the first ordering scope to a second ordering scope associated with the new ordering scope identifier, the ordering scope manager provides hint information to the processor core. The processor core transitions from the first ordering scope to the second ordering scope without completing a task switch in response to the hint information.

    摘要翻译： 数据处理系统包括处理器核心和硬件模块。 处理器内核在数据包上执行任务。 硬件模块在订购范围管理器的第一存储位置处存储第一订购范围标识符。 第一个订购范围标识符指示第一个任务正在操作的第一个订购范围。订购范围管理器增加第一个订购范围标识符以创建新的订购范围标识符。 响应于确定处理器核被授权将第一任务从第一排序范围转换到与新排序范围标识符相关联的第二排序范围，订购范围管理器向处理器核提供提示信息。 处理器核心从第一订购范围转换到第二订购范围，而不响应于提示信息完成任务切换。

    Event triggered memory mapped access
    9.
    发明授权
    Event triggered memory mapped access 有权
    事件触发内存映射访问

    公开(公告)号：US08700878B2

    公开(公告)日：2014-04-15

    申请号：US12485190

    申请日：2009-06-16

    申请人： William D. Schwarz ,  Joseph P. Gergen ,  Jason T. Nearing ,  Zheng Xu

    发明人： William D. Schwarz ,  Joseph P. Gergen ,  Jason T. Nearing ,  Zheng Xu

    IPC分类号： G06F12/00

    CPC分类号： G06F12/0292 ,  G06F11/3636

    摘要： In one or more embodiments, a data processing system can include at least one core capable of executing instructions of an instruction set architecture and a triggered memory map access (tMMA) system coupled to the at least one core. The tMMA system can receive one or more events and, in response, perform one or more actions. For example, the actions can include transactions which can include a write to a an address of the memory map, a read from an address of the memory map, a read followed by write to two respective addresses of the memory map, and/or a fetch transaction. A result of a transaction (e.g., data read, data written, error, etc.) can be used in generating a trace message. For example, the tMMA system can generate a trace message that includes the result of the transaction and send the trace message to a trace message bus.

    摘要翻译： 在一个或多个实施例中，数据处理系统可以包括能够执行指令集架构的指令的至少一个核心以及耦合到所述至少一个核心的触发的存储器映射访问（tMMA）系统。 tMMA系统可以接收一个或多个事件，并作为响应执行一个或多个动作。 例如，动作可以包括可以包括对存储器映射的地址的写入，从存储器映射的地址的读取，随后写入存储器映射的两个相应地址的读取的事务，和/或 提取事务。 事务的结果（例如，数据读取，数据写入，错误等）可用于生成跟踪消息。 例如，tMMA系统可以生成包含事务结果的跟踪消息，并将跟踪消息发送到跟踪消息总线。