Abstract:
A high-repetition laser system for generating ultra-short pulses according to the principle of pulse decoupling is described. This is achieved by the use of an amplifying laser medium, a laser resonator with at least one resonator mirror and at least one pulse decoupling component, a saturable absorber mirror, and a pump source for pumping the laser medium wherein the pulse decoupling component is an electro-optical modulator.
Abstract:
A high-repetition laser system for generating ultra-short pulses according to the principle of pulse decoupling is described. This is achieved by the use of an amplifying laser medium, a laser resonator with at least one resonator mirror and at least one pulse decoupling component, a saturable absorber mirror, and a pump source for pumping the laser medium wherein the pulse decoupling component is an electro-optical modulator.
Abstract:
The invention relates to a highly repetitive laser system operating according to the reproducible amplifier principle. Said system comprises at least one amplified laser medium, a laser resonator provided with at least one resonator mirror and at least one modulator and a pump source, in particular, a laser diode source, which is used to pump the laser medium. The highly repetitive laser system is compact by virtue of the fact that a pulse extensor, having a highly dispersive effect as a result of the structure or material thereof, is integrated into the laser resonator.
Abstract:
The invention relates to a high-repetition laser system for generating ultra-short pulses according to the principle of pulse decoupling according to the precharacterizing clause of claim 1 and a use of the laser system.
Abstract:
The invention relates to a microchip laser having a monolithic resonator (1) which has a birefringent laser crystal (2), wherein a laser beam (9) decoupled from the resonator, (1) which has a laser wavelength, exits the resonator (1) along a laser beam axis (12) and the length (L) of the resonator (1) is less than 150 μm based on a direction of the laser beam axis (12). The laser crystal (2) has a thickness (D) based on the direction of the laser beam axis (12) such that, in the case of a light beam (16) having the laser wavelength occurring in the direction of the laser beam axis (12) being incident on the laser crystal (2) between the ordinary and extraordinary beam (17, 19), in which the light beam (16) is divided in the laser crystal (2), a phase shift in the range of π/2 +/−π/4 occurs in a single pass through the laser crystal (2).
Abstract:
In a laser arrangement comprising at least one laser medium for producing a laser emission, a laser resonator having a beam path with a length of at least 20 cm and with at least one end mirror, the beam path within the laser resonator is formed at least partly by free-beam optics. A resonator element arranged in the beam path has at least two optical surfaces as surfaces interacting with the radiation led via the beam path, these optical surfaces being rigidly connected to one another and being adjustable together in the beam path in such a way that, on tilting by an angle error, they achieve substantially the same effect on the guidance of the beam path but with opposite sign, so that mutual compensation of tilt errors takes place.
Abstract:
A laser amplification arrangement comprising a laser medium for producing an amplified laser emission as output signal from a useful signal to be amplified and a pump source has a switching component for coupling the useful signal into the laser medium. Laser medium and switching component are formed and arranged so that a division of an input signal (ES) into the useful signal and a background signal is effected, the background signal being passed through the laser medium at a time immediately before and/or after the coupling-in of the useful signal to be amplified.
Abstract:
The solid state laser comprises a laser gain medium (1), pumping means for pumping the laser gain medium, and a laser cavity having a first end (3) and a second end (17), wherein the laser gain medium is at, or in the vicinity of, said first end (3) of said cavity. A semiconductor saturable absorber mirror (SESAM) can be placed at the second end (17) of the cavity. The laser gain medium can comprise at least one face for receiving pumping energy from the pumping means, the face being made reflective at a laser frequency of the laser, so that it can form the first end of the laser cavity. The resulting setup used for generating femtosecond laser pulses.
Abstract:
The optical component designed preferably for use in a laser cavity for the generation of a pulsed laser beam, especially a mode-coupled beam in the microsecond to the femtosecond range, contains a coating ensemble that acts as a saturable absorber, contains several layers, and is wave-coupled and “etalon-free,” having at least one saturable absorptive layer. The sequence of layers in the coating ensemble can be laid out such that for an incident cavity beam a negative dispersion of the group velocity (negative group delay dispersion and negative group velocity dispersion) also results. In the optical component which acts among other things as a saturable absorber and can be used as such, separate, individual, discrete optical elements need not be assembled in a sandwich-type construction with minimization. Instead, the optical component is a coating ensemble in which each individual layer, together with the remainder of the ensemble, contributes to the phase-coupled overall behavior of the incident beam. One or more layers which exhibit the saturable absorptive properties may be positioned in this ensemble, naturally allowing for phase-constant relations, such that an optimal, in this case a saturable absorptive, effect can be achieved.
Abstract:
The invention relates to a microchip laser having a monolithic resonator (1) which has a birefringent laser crystal (2), wherein a laser beam (9) decoupled from the resonator, (1) which has a laser wavelength, exits the resonator (1) along a laser beam axis (12) and the length (L) of the resonator (1) is less than 150 μm based on a direction of the laser beam axis (12). The laser crystal (2) has a thickness (D) based on the direction of the laser beam axis (12) such that, in the case of a light beam (16) having the laser wavelength occurring in the direction of the laser beam axis (12) being incident on the laser crystal (2) between the ordinary and extraordinary beam (17, 19), in which the light beam (16) is divided in the laser crystal (2), a phase shift in the range of π/2+/−π/4 occurs in a single pass through the laser crystal (2).