摘要:
A microelectronic die assembly. The die assembly includes a microelectronic die, and a thermally conductive element attached to the backside of the die with a thermal interface material. The thermally conductive element has lateral dimensions smaller than, substantially equal to, or larger than lateral dimensions of the die by up to a maximum amount, wherein the maximum amount is adapted to allow a mounting of the die assembly to a package substrate.
摘要:
A microelectronic die assembly. The die assembly includes a microelectronic die, and a thermally conductive element attached to the backside of the die with a thermal interface material. The thermally conductive element has lateral dimensions smaller than, substantially equal to, or larger than lateral dimensions of the die by up to a maximum amount, wherein the maximum amount is adapted to allow a mounting of the die assembly to a package substrate.
摘要:
An apparatus and method for embedding a laser source on a semiconductor substrate and an optical interconnect to couple the laser source to internal components of the semiconductor substrate. An on-die waveguide is integrated on the semiconductor substrate. A package waveguide is disposed on the semiconductor substrate and evanescently coupled to the on-die waveguide. The laser source is embedded within the packaged waveguide to provide an optical signal to the on-die waveguide via the package waveguide.
摘要:
An apparatus and method for embedding a laser source on a semiconductor substrate and an optical interconnect to couple the laser source to internal components of the semiconductor substrate. An on-die waveguide is integrated on the semiconductor substrate. A package waveguide is disposed on the semiconductor substrate and evanescently coupled to the on-die waveguide. The laser source is embedded within the packaged waveguide to provide an optical signal to the on-die waveguide via the package waveguide.
摘要:
In one embodiment, the invention provides a method comprising fabricating a die bump on a die, the die bump being shaped and dimensioned to at least reduce the flow of solder material used, to attach the die bump to a package substrate, towards an under bump metallurgy (UBM) layer located below the die bump. Advantageously, the method may comprise performing a substrate reflow operation to attach the package substrate to the die bump, without performing a separate wafer reflow operation to reflow the die bump.
摘要:
A thin film integrated conductivity sensor is formed on a suitable surface for measuring the electrical conductivity of a liquid. The surface is preferably an insulator, but may be conducting, if the electrodes are on an insulating surface. A preferred embodiment insulates the electrodes by use of a dielectric layer that is deposited on top of a silicon wafer substrate. A sensor tip is integrated on the top surface of the substrate. In a preferred embodiment, the substrate is fabricated into a sensor shape with a small sharp tip at one end and an opposite larger end for accommodating electrode pads. The larger end might also be used for integration of measurement circuits or accommodating bonding pads. In a preferred embodiment, the tip also accommodates an integrated temperature sensor to enable local temperature measurements. The sensor is a thin-film resistor preferably enclosed within a layer of the sensor tip and having a serpentine shape to produce significant resistance (hundreds to thousands of Ohms) while consuming a small area of the sensor tip.
摘要:
In one embodiment, the invention provides a method comprising fabricating a die bump on a die, the die bump being shaped and dimensioned to at least reduce the flow of solder material used, to attach the die bump to a package substrate, towards an under bump metallurgy (UBM) layer located below the die bump. Advantageously, the method may comprise performing a substrate reflow operation to attach the package substrate to the die bump, without performing a separate wafer reflow operation to reflow the die bump.
摘要:
In one embodiment, the invention provides a method comprising fabricating a die bump on a die, the die bump being shaped and dimensioned to at least reduce the flow of solder material used, to attach the die bump to a package substrate, towards an under bump metallurgy (UBM) layer located below the die bump. Advantageously, the method may comprise performing a substrate reflow operation to attach the package substrate to the die bump, without performing a separate wafer reflow operation to reflow the die bump.
摘要:
Disclosed is a packaged integrated circuit and a method of forming thereof. The packaged integrated circuit includes a substrate, a plurality of solder bumps, a semiconductor die and a plurality of copper bumps. The plurality of solder bumps are configured on the substrate. Each of the plurality of solder bumps has a height of about 40 micrometers (μm) to about 65 μm. Further, the plurality of copper bumps are configured on the semiconductor die. Each of the plurality of copper bumps has a height of about 10 μm to about 25 μm. The semiconductor die is disposed above the substrate such that the plurality of copper bumps are coupled to the plurality of solder bumps, which in turn, couples the semiconductor die to the substrate.
摘要:
Mechanical stresses are reduced between an electronic component having relatively low fracture toughness and a substrate having relatively greater fracture toughness. In an embodiment, the component may be a die having mounting contacts formed of a low yield strength material, such as solder. A package substrate has columnar lands formed of a relatively higher yield strength material, such as copper, having a relatively higher melting point than the component contacts and having a relatively high current-carrying capacity. The component contacts may be hemispherical in shape. The lands may be substantially cylinders, truncated cones or pyramids, inverted truncated cones or pyramids, or other columnar shapes. Methods of fabrication, as well as application of the package to an electronic assembly and to an electronic system, are also described.