摘要:
Disclosed is a packaged integrated circuit and a method of forming thereof. The packaged integrated circuit includes a substrate, a plurality of solder bumps, a semiconductor die and a plurality of copper bumps. The plurality of solder bumps are configured on the substrate. Each of the plurality of solder bumps has a height of about 40 micrometers (μm) to about 65 μm. Further, the plurality of copper bumps are configured on the semiconductor die. Each of the plurality of copper bumps has a height of about 10 μm to about 25 μm. The semiconductor die is disposed above the substrate such that the plurality of copper bumps are coupled to the plurality of solder bumps, which in turn, couples the semiconductor die to the substrate.
摘要:
A linear coefficient of thermal expansion (CTE) mismatch between two materials, such as between a microelectronic die and a mounting substrate, may induce stress at the interface of the materials. The temperature changes present during the process of attaching a die to a mounting substrate can cause cracking and failure in the electrical connections used to connect the die and mounting substrate. A material with a CTE approximately matching the die CTE is introduced in the mounting substrate to reduce the stress and cracking at the electrical connections between the die and mounting substrate. Additionally, this material may comprise thin film capacitors useful for decoupling power supplies.
摘要:
A microelectronic assembly is provided, comprising at least a first microelectronic die carrying a microelectronic circuit, at least a first periphery seal attached to an edge of a surface of the microelectronic die, at least a first solder thermal interface material attached to a central region of the surface of the microelectronic die, the solder thermal interface material having a higher thermal conductivity than the periphery seal, and a thermally conductive member attached to the periphery seal and the solder thermal interface material on a side thereof opposing the microelectronic die.
摘要:
A linear coefficient of thermal expansion (CTE) mismatch between two materials, such as between a microelectronic die and a mounting substrate, may induce stress at the interface of the materials. The temperature changes present during the process of attaching a die to a mounting substrate can cause cracking and failure in the electrical connections used to connect the die and mounting substrate. A material with a CTE approximately matching the die CTE is introduced in the mounting substrate to reduce the stress and cracking at the electrical connections between the die and mounting substrate. Additionally, this material may comprise thin film capacitors useful for decoupling power supplies.
摘要:
A column is coupled to a last metallization of a die and the column is mated to a mounting substrate with that aid of a solder. The column may have the solder attached thereto before mating to the mounting substrate and the mounting substrate may be a bare-board (no solder mask) during the mating process. The column has an aspect ratio between 0.75 and 10.
摘要:
A molding compound cap structure is disclosed. A process of forming the molding compound cap structure is also disclosed. A microelectronic package is also disclosed that uses the molding compound cap structure. A method of assembling a microelectronic package is also disclosed. A computing system is also disclosed that includes the molding compound cap structure. The molding compound cap includes a configuration that exposes a portion of a microelectronic device.
摘要:
Some embodiments of the present invention include apparatuses and methods relating to processing and packaging microelectronic devices that reduce stresses on and limit or eliminate crack propagation in the devices.
摘要:
Some embodiments of the present invention include apparatuses and methods relating to processing and packaging microelectronic devices that reduce stresses on and limit or eliminate crack propagation in the devices.
摘要:
The present description relates to the field of fabricating microelectronic packages, wherein a microelectronic device may be attached to a microelectronic substrate with a compensator to control package warpage. The warpage compensator may be a low coefficient of thermal expansion material, including but not limited to silicon or a ceramic material, which is positioned on a land-side of the microelectronic device to counteract the thermal expansion effects of the microelectronic device.
摘要:
Provided are an electronic assembly and method for forming the same, comprising a first element having a first surface and a second element having a second surface.Electrical connections are provided between the first and the second elements formed by heating solder bumps. At least one collapse limiter structure is coupled to at least one of the first and the second surfaces, wherein the at least one collapse limiter structure is between at least two of the electrical connections.