Abstract:
Embodiments of the present disclosure are directed to package assemblies and methods for fabricating package assemblies. In one embodiment, a package assembly includes a die at least partially embedded in a mold compound; and a through mold via (TMV). The TMV may have vertical sides or may include two different portions with varying shapes. In some instances, prefabricated via bars may be used during fabrication. Package assemblies of the present disclosure may include package-on-package (POP) interconnects having a pitch of less than 0.3 mm. Other embodiments may be described and/or claimed.
Abstract:
The present description relates to the field of fabricating microelectronic assemblies, wherein a microelectronic device may be attached to a microelectronic substrate with a plurality of shaped and oriented solder joints. The shaped and oriented solder joints may be substantially oval, wherein the major axis of the substantially oval solder joints may be substantially oriented toward a neutral point or center of the microelectronic device. Embodiments of the shaped and oriented solder joint may reduce the potential of solder joint failure due to stresses, such as from thermal expansion stresses between the microelectronic device and the microelectronic substrate.
Abstract:
An assembly of substrate packages interconnected with flex cables and a method of fabrication of the substrate package. The assembly allows input/output (I/O) signals to be speedily transmitted between substrate packages via flex cable and without being routed through the motherboard. Embodiments relate to a substrate package providing separable inter-package flex cable connection. Hermetically-sealed guiding through holes are provided on the substrate package as a mechanical alignment feature to guide connection between flex cables and high speed I/O contact pads on the substrate package. Embodiments of the method of fabrication relate to simultaneously forming hermetically-sealed guiding through holes and I/O contact pads.
Abstract:
Electronic assemblies and methods including the formation of interconnect structures are described. In one embodiment an apparatus includes semiconductor die and a first metal bump on the die, the first metal bump including a surface having a first part and a second part. The apparatus also includes a solder resistant coating covering the first part of the surface and leaving the second part of the surface uncovered. Other embodiments are described and claimed.
Abstract:
An assembly of substrate packages interconnected with flex cables. The assembly allows input/output (I/O) signals to be speedily transmitted between substrate packages via flex cable and without being routed through the motherboard. Embodiments relate to a substrate package providing detachable inter-package flex cable connection. The flex cable comprises a transmission region that includes a plurality of signal traces and a ground plane. A plurality of solder mask strips are disposed on the plurality of signals traces to provide anchoring for the signal traces. The solder mask strips intersect the signals traces. The exposed signal traces and the ground plane are coated with organic solderability preservative material. Hermetically-sealed guiding through holes are provided on the substrate package as a mechanical alignment feature to guide connection between flex cables and high speed I/O contact pads on the substrate package. Embodiments of the method of fabrication relate to simultaneously forming hermetically-sealed guiding through holes and I/O contact pads.
Abstract:
An assembly of substrate packages interconnected with flex cables and a method of fabrication of the substrate package. The assembly allows input/output (I/O) signals to be speedily transmitted between substrate packages via flex cable and without being routed through the motherboard. Embodiments relate to a substrate package providing separable inter-package flex cable connection. Hermetically-sealed guiding through holes are provided on the substrate package as a mechanical alignment feature to guide connection between flex cables and high speed I/O contact pads on the substrate package. Embodiments of the method of fabrication relate to simultaneously forming hermetically-sealed guiding through holes and I/O contact pads.
Abstract:
Disclosed herein are integrated circuit (IC) packages, and related structures and techniques. In some embodiments, an IC package may include: a die; a redistribution structure, wherein the die is coupled to the redistribution structure via first-level interconnects and solder; a solder resist; and second-level interconnects coupled to the redistribution structure through openings in the solder resist.
Abstract:
Stacked flex cable assemblies and their manufacture are described. One assembly includes a first flex cable and a second flex cable electrically coupled to the first flex cable. The assembly also includes a connector electrically coupled to the first flex cable. The first flex cable is positioned between the connector and the second flex cable. Other embodiments are described and claimed.
Abstract:
Electronic assemblies and methods including the formation of interconnect structures are described. In one embodiment an apparatus includes semiconductor die and a first metal bump on the die, the first metal bump including a surface having a first part and a second part. The apparatus also includes a solder resistant coating covering the first part of the surface and leaving the second part of the surface uncovered. Other embodiments are described and claimed.
Abstract:
A high-speed I/O trace is part of an I/O package architecture for an integrated circuit package substrate. The integrated circuit package substrate includes an integrated heat spreader footprint on a die-side and the I/O trace to couple with an IC device to be disposed inside the IHS footprint. The I/O trace includes a pin-out terminal outside the IHS footprint to couple to an IC device to be disposed outside the IHS footprint. The high-speed I/O trace can sustain a data flow rate from a processor in a range from 5 gigabits per second (Gb/s) to 40 Gb/s.