公开(公告)号：US06490033B1

公开(公告)日：2002-12-03

申请号：US09478149

申请日：2000-01-05

申请人： David Gerald Coult ,  Gustav Edward Derkits, Jr. ,  Franklin Roy Dietz ,  Ranjani C. Muthiah ,  Sonja Radelow

发明人： David Gerald Coult ,  Gustav Edward Derkits, Jr. ,  Franklin Roy Dietz ,  Ranjani C. Muthiah ,  Sonja Radelow

IPC分类号： G01J110

CPC分类号： G01B11/0675

摘要： A method of calibrating an interferometer system and a multilayer thin film used for calibrating the interferometer system. The method including measuring the step height of a gold step with the interferometer system, the multilayer thin film comprising a gold layer that defines the gold step. The multilayer thin film having an optical flat, a first layer on the surface of the optical flat, a second layer on the first layer, a test layer on a part of the second layer, and a gold layer on the test layer and on a part of the second layer uncovered by the test layer. The test layer having a test layer step, and the gold layer having a gold step over the test layer step. Also, a reference standard and a method of making the reference standard for a thin film sample with one or more component thin film layers, the reference standard having a gold layer over the surface of the thin film sample.

摘要翻译： 校准干涉仪系统和用于校准干涉仪系统的多层薄膜的方法。 该方法包括用干涉仪系统测量金台阶的台阶高度，多层薄膜包括限定金阶的金层。 所述多层薄膜具有光学平面，在光学平面的表面上的第一层，第一层上的第二层，第二层的一部分上的测试层，以及测试层上的金层 由测试层覆盖的第二层的一部分。 所述测试层具有测试层步骤，并且所述金层在所述测试层步骤上具有金阶。 此外，参考标准和制备具有一个或多个组分薄膜层的薄膜样品的参考标准的方法，参考标准在薄膜样品的表面上具有金层。

公开(公告)号：US5990560A

公开(公告)日：1999-11-23

申请号：US955686

申请日：1997-10-22

申请人： David Gerald Coult ,  Gustav Edward Derkits, Jr. ,  John William Osenbach ,  Yiu-Man Wong

发明人： David Gerald Coult ,  Gustav Edward Derkits, Jr. ,  John William Osenbach ,  Yiu-Man Wong

IPC分类号： B23K1/00 ,  B23K31/02 ,  B23K35/00 ,  B23K35/02 ,  B23K35/14 ,  H01L23/48

CPC分类号： B23K35/0238 ,  B23K35/001

摘要： An improved method and composition for achieving a kinetically-controlled solder bond is disclosed having particular application to the fabrication of hybrid integrated circuits and optical subassemblies. The method involves the use of a solder layer, a quenching layer, and a control layer disposed between the solder layer and quenching layer, in which the control layer is advantageously comprised of a thin film of platinum. Additionally, a barrier layer, also preferably comprised of a thin film of platinum, is disposed between the solder layer and the parts to be bonded to prevent the oxidation of solder materials during the soldering process or later storage of the soldered parts.

摘要翻译： 公开了用于实现动力学控制的焊料接合的改进的方法和组合物，其特别适用于制造混合集成电路和光学组件。 该方法包括使用焊料层，淬火层和设置在焊料层和淬火层之间的控制层，其中控制层有利地由铂薄膜组成。 此外，还优选由铂薄膜构成的阻挡层设置在焊料层和待接合部件之间，以防止在焊接过程期间焊料材料的氧化或焊接部件的后续存储。

公开(公告)号：US06342442B1

公开(公告)日：2002-01-29

申请号：US09197074

申请日：1998-11-20

申请人： David L. Angst ,  David Gerald Coult ,  John William Osenbach ,  Gustav Edward Derkits, Jr. ,  Brian Stauffer Auker

发明人： David L. Angst ,  David Gerald Coult ,  John William Osenbach ,  Gustav Edward Derkits, Jr. ,  Brian Stauffer Auker

IPC分类号： H01L2348

CPC分类号： H01L24/32 ,  B23K1/0016 ,  B23K2101/40 ,  H01L24/29 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/32507 ,  H01L2224/83193 ,  H01L2224/83801 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2224/83948 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/00014

摘要： An improved method and solder composition for kinetically controlled part bonding. The method involves applying at least a first chemical element layer of an intermetallic compound to a first part and applying at least a second chemical element layer of the intermetallic compound to a second part. The first and second parts are placed together so that the chemical element layers contact each other. The parts are heated from a storage temperature to a bonding temperature which is slightly above a first melting temperature that melts the chemical element layer of one of the first and second parts into a liquid mixture. The composition of liquid mixture varies with time during heating due to the formation of the intermetallic compound therein by progressive incorporation of the other one of the first and second chemical element layers into the mixture. The melting temperature of the liquid mixture increases with time as the composition changes until the melting temperature of the liquid mixture is about equal to the bonding temperature thereby soldifying the liquid mixture into a bond. The parts are then held at a holding temperature which is higher than the storage temperature to maintain diffusion of the other one of the first and second chemical element layers into the bond. This forms a quantity of the intermetallic compound in the bond which is sufficient to raise the melting temperature of the bond to a desired usage temperature that is substantially above the first melting temperature. The intermetallic compound is typically composed of a ternary solder composition.

摘要翻译： 用于动力学受控部件粘合的改进的方法和焊料组成。 所述方法包括将金属间化合物的至少第一化学元素层施加到第一部分，并将至少第二化学元素层施加到金属间化合物到第二部分。 将第一和第二部分放置在一起，使得化学元件层彼此接触。 将部件从储存温度加热到稍高于将第一和第二部分之一的化学元素层熔化成液体混合物的第一熔融温度的接合温度。 液体混合物的组成随加热过程中的时间而变化，因为其中的金属间化合物的形成通过将第一和第二化学元素层中的另一个逐渐掺入混合物中而变化。 随着组合物变化，液体混合物的熔融温度随着时间的推移而增加，直到液体混合物的熔融温度大约等于粘结温度，从而将液体混合物装入粘合剂中。 然后将部件保持在高于储存温度的保持温度，以保持第一和第二化学元件层中的另一个的扩散进入粘合。 这形成了一定量的粘结中的金属间化合物，其足以将粘结的熔融温度升高到基本上高于第一熔融温度的所需使用温度。 金属间化合物通常由三元焊料组合物组成。

公开(公告)号：US06184582B2

公开(公告)日：2001-02-06

申请号：US09069396

申请日：1998-04-29

申请人： David Gerald Coult ,  Gustav Edward Derkits, Jr. ,  Bryan Phillip Segner

发明人： David Gerald Coult ,  Gustav Edward Derkits, Jr. ,  Bryan Phillip Segner

IPC分类号： H01L2348

CPC分类号： H01L23/49811 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： Compliant standoffs are disposed on a support surface of a semiconductor or hybrid semiconductor device. The standoffs extend further from the support surface than other active or passive structures associated with the (hybrid) semiconductor device, and are spaced at least a minimum distance from such associated structures. Each compliant standoff provides a surface at which auxiliary devices, such as optical subassemblies, lightwave circuits and the like, can be attached. Since the compliant standoffs extend further from the support surface than other associated structures, such other associated structures are protected from potentially damaging contact with the auxiliary device(s) being attached to the compliant standoffs. Moreover, since the compliant standoffs are spaced from such other asociated structures, potentially damaging thermal and mechanical stresses (imparted to the standoffs as a result of the contact with an auxiliary device such as during bonding) are substantially dissipated by the compliant standoff and directed into the support rather than the other associated structures. The compliant standoffs advantageously comprise conductive materials such that they may be placed in ohmic electrical contact with at least one active region of the (hybrid) semiconductor device.

摘要翻译： 合适的支座设置在半导体或混合半导体器件的支撑表面上。 与其他与（混合）半导体器件相关联的有源或无源结构，支座从支撑表面进一步延伸，并且与这种相关结构间隔开至少最小的距离。 每个顺应的支座提供了一个表面，在该表面上可附接诸如光学子组件，光波回路等的辅助装置。 由于顺从的支座从支撑表面进一步延伸到其他相关联的结构，所以这种其它相关联的结构被保护以防止与被附接到柔性支座的辅助装置的潜在的破坏性接触。 此外，由于顺应性支座与其他相关结构间隔开，所以潜在的破坏性热力和机械应力（由于与辅助装置的接触而导致的间隙（例如在接合期间）被施加） 支持而不是其他相关的结构。 柔性支座有利地包括导电材料，使得它们可以与（混合）半导体器件的至少一个有源区域欧姆电接触放置。

公开(公告)号：US07009299B2

公开(公告)日：2006-03-07

申请号：US10021174

申请日：2001-10-29

申请人： David L. Angst ,  David Gerald Coult ,  John William Osenbach ,  Gustav Edward Derkits, Jr. ,  Brian Stauffer Auker

发明人： David L. Angst ,  David Gerald Coult ,  John William Osenbach ,  Gustav Edward Derkits, Jr. ,  Brian Stauffer Auker

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/32 ,  B23K1/0016 ,  B23K2101/40 ,  H01L24/29 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/32507 ,  H01L2224/83193 ,  H01L2224/83801 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2224/83948 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/00014

摘要： An improved method and solder composition for kinetically controlled part bonding. The method involves applying at least a first chemical element layer of an intermetallic compound to a first part and applying at least a second chemical element layer of the intermetallic compound to a second part. The first and second parts are placed together so that the chemical element layers contact each other. The parts are heated from a storage temperature to a bonding temperature which is slightly above a first melting temperature that melts the chemical element layer of one of the first and second parts into a liquid mixture. The composition of liquid mixture varies with time during heating due to the formation of the intermetallic compound therein by progressive incorporation of the other one of the first and second chemical element layers into the mixture. The melting temperature of the liquid mixture increases with time as the composition changes until the melting temperature of the liquid mixture is about equal to the bonding temperature thereby soldifying the liquid mixture into a bond. The parts are then held at a holding temperature which is higher than the storage temperature to maintain diffusion of the other one of the first and second chemical element layers into the bond. This forms a quantity of the intermetallic compound in the bond which is sufficient to raise the melting temperature of the bond to a desired usage temperature that is substantially above the first melting temperature. The intermetallic compound is typically composed of a ternary solder composition.

摘要翻译： 用于动力学受控部件粘合的改进的方法和焊料组成。 所述方法包括将金属间化合物的至少第一化学元素层施加到第一部分，并将至少第二化学元素层施加到金属间化合物到第二部分。 将第一和第二部分放置在一起，使得化学元件层彼此接触。 将部件从储存温度加热到稍高于将第一和第二部分之一的化学元素层熔化成液体混合物的第一熔融温度的接合温度。 液体混合物的组成随加热过程中的时间而变化，因为其中的金属间化合物的形成通过将第一和第二化学元素层中的另一个逐渐掺入混合物中而变化。 随着组合物变化，液体混合物的熔融温度随着时间的推移而增加，直到液体混合物的熔融温度大约等于粘结温度，从而将液体混合物装入粘合剂中。 然后将部件保持在高于储存温度的保持温度，以保持第一和第二化学元件层中的另一个的扩散进入粘合。 这形成了一定量的粘结中的金属间化合物，其足以使粘结的熔融温度升高到基本上高于第一熔融温度的所需使用温度。 金属间化合物通常由三元焊料组合物组成。

公开(公告)号：US06437868B1

公开(公告)日：2002-08-20

申请号：US09429327

申请日：1999-10-28

申请人： David Gerald Coult ,  Duane Donald Wendling ,  Charles William Lentz ,  Bryan Phillip Segner ,  Gustav Edward Derkits ,  Wan-ning Wu ,  Franklin Roy Dietz

发明人： David Gerald Coult ,  Duane Donald Wendling ,  Charles William Lentz ,  Bryan Phillip Segner ,  Gustav Edward Derkits ,  Wan-ning Wu ,  Franklin Roy Dietz

IPC分类号： G01B1106

CPC分类号： B24B37/013 ,  B24B49/04 ,  B24B49/12 ,  G01B11/06 ,  Y10T279/11

摘要： A system for measuring the thickness of a wafer while it is being thinned this disclosed. The system and method provide integrating an optical reflectometer into a common wafer thinning apparatus. Using reflected optical signals from the top and bottom of the wafer, the thickness of the wafer is determined with time based calculations in real-time while thinning is occurring. Once the desired thickness has been reached, the thinning operation is halted. By performing the measurement in-situ, this system and a method prevent scrapping of wafers which are overthinned and the reloading of wafers which are too thick. Since an optical reflectometer is used, the measurement is contactless, and thus prevents possible damage to wafers during measurement.

摘要翻译： 一种用于测量晶片厚度的系统，该系统在该薄膜被薄化时被测量。 该系统和方法提供将光学反射计集成到公共晶片间隔装置中。 使用来自晶片顶部和底部的反射光信号，晶片的厚度由实时的时间计算确定，而发生变薄。 一旦达到所需的厚度，则变薄操作停止。 通过原位进行测量，该系统和一种方法可以防止过度沉淀的晶片的报废和太厚的晶片的重新装载。 由于使用光学反射计，测量是非接触的，因此可以防止在测量期间可能损坏晶片。

公开(公告)号：US6146909A

公开(公告)日：2000-11-14

申请号：US197412

申请日：1998-11-21

申请人： Joze E. Antol ,  David Gerald Coult ,  Gustav Edward Derkits ,  Franklin Roy Dietz ,  Nur Selamoglu

发明人： Joze E. Antol ,  David Gerald Coult ,  Gustav Edward Derkits ,  Franklin Roy Dietz ,  Nur Selamoglu

IPC分类号： G01N1/40 ,  G01N33/00 ,  G01N33/20 ,  G01N1/28

CPC分类号： G01N33/20 ,  G01N1/40 ,  G01N2033/0095

摘要： The specification describes an analytical technique for determining trace levels of copper in a background matrix of titanium by dissolving the titanium and the copper impurity in HF, then selectively depositing the copper on a clean silicon surface. The silicon surface is then analyzed for the trace level of copper.

摘要翻译： 该说明书描述了通过将钛和铜杂质溶解在HF中然后选择性地将铜沉积在干净的硅表面上来确定钛背景基质中痕量铜的分析技术。 然后分析硅表面的痕量铜。