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186 条记录 (耗时 0.035 秒)

    Implantation of gate regions in semiconductor device fabrication
    5.
    发明授权
    Implantation of gate regions in semiconductor device fabrication 失效
    在半导体器件制造中植入栅极区域

    公开(公告)号：US07557023B2

    公开(公告)日：2009-07-07

    申请号：US11532189

    申请日：2006-09-15

    申请人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III

    发明人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III

    IPC分类号： H01L21/425

    CPC分类号： H01L29/66545 ,  H01L21/0273 ,  H01L21/266 ,  H01L21/28035 ,  H01L29/1083 ,  H01L29/6653 ,  H01L29/6659

    摘要： A semiconductor fabrication method. The method includes providing a semiconductor structure which includes (i) a semiconductor layer, (ii) a gate dielectric layer on the semiconductor layer, and (iii) a gate electrode region on the gate dielectric layer. The gate dielectric layer is sandwiched between and electrically insulates the semiconductor layer and the gate electrode region. The semiconductor layer and the gate dielectric layer share a common interfacing surface which defines a reference direction perpendicular to the common interfacing surface and pointing from the semiconductor layer to the gate dielectric layer. Next, a resist layer is formed on the gate dielectric layer and the gate electrode region. Next, a cap portion of the resist layer directly above the gate electrode region in the reference direction is removed without removing any portion of the resist layer not directly above the gate electrode region in the reference direction.

    摘要翻译： 半导体制造方法。 该方法包括提供半导体结构，其包括（i）半导体层，（ii）半导体层上的栅极电介质层，以及（iii）栅极电介质层上的栅电极区。 栅极电介质层被夹在半导体层和栅极电极区域之间并使其电绝缘。 半导体层和栅极介电层共享公共接口表面，其界定垂直于公共接口表面的参考方向并且从半导体层指向栅极介电层。 接下来，在栅极电介质层和栅极电极区域上形成抗蚀剂层。 接下来，去除在参考方向上正好在栅极区域上方的抗蚀剂层的盖部分，而不去除在参考方向上不在栅电极区域正上方的任何部分的抗蚀剂层。

    Simultaneous Conditioning of a Plurality of Memory Cells Through Series Resistors
    7.
    发明申请
    Simultaneous Conditioning of a Plurality of Memory Cells Through Series Resistors 有权
    通过串联电阻同时调节多个存储单元

    公开(公告)号：US20080185652A1

    公开(公告)日：2008-08-07

    申请号：US12060922

    申请日：2008-04-02

    申请人： Toshijaru Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger ,  Chung H. Lam ,  Gerhard I. Meijer

    发明人： Toshijaru Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger ,  Chung H. Lam ,  Gerhard I. Meijer

    IPC分类号： H01L23/62 ,  H01L21/8234

    CPC分类号： H01L27/0629 ,  H01L27/101 ,  H01L27/24

    摘要： Disclosed are a semiconductor structure and a method that allow for simultaneous voltage/current conditioning of multiple memory elements in a nonvolatile memory device with multiple memory cells. The structure and method incorporate the use of a resistor connected in series with the memory elements to limit current passing through the memory elements. Specifically, the method and structure incorporate a blanket temporary series resistor on the wafer surface above the memory cells and/or permanent series resistors within the memory cells. During the conditioning process, these resistors protect the transition metal oxide in the individual memory elements from damage (i.e., burn-out), once it has been conditioned.

    摘要翻译： 公开了一种半导体结构和方法，其允许在具有多个存储器单元的非易失性存储器件中同时对多个存储器元件进行电压/电流调节。 该结构和方法结合使用与存储器元件串联连接的电阻器来限制电流通过存储器元件。 具体地，该方法和结构在存储器单元上方的晶片表面上和/或存储器单元内的永久串联电阻器上并入一个橡皮布暂时串联电阻器。 在调节过程中，一旦调节了这些电阻，这些电阻就可以保护各个存储元件中的过渡金属氧化物免受损坏（即烧坏）。

    Y-shaped carbon nanotubes as AFM probe for analyzing substrates with angled topography
    9.
    发明授权
    Y-shaped carbon nanotubes as AFM probe for analyzing substrates with angled topography 有权
    Y型碳纳米管作为用于分析具有倾斜的地形的基底的AFM探针

    公开(公告)号：US07368712B2

    公开(公告)日：2008-05-06

    申请号：US11164792

    申请日：2005-12-06

    申请人： Carol A. Boye ,  Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III

    发明人： Carol A. Boye ,  Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III

    IPC分类号： G01N23/00 ,  G21K7/00

    CPC分类号： G01Q60/42 ,  G01Q70/12

    摘要： A Y-shaped carbon nanotube atomic force microscope probe tip and methods comprise a shaft portion; a pair of angled arms extending from a same end of the shaft portion, wherein the shaft portion and the pair of angled arms comprise a chemically modified carbon nanotube, and wherein the chemically modified carbon nanotube is modified with any of an amine, carboxyl, fluorine, and metallic component. Preferably, each of the pair of angled arms comprises a length of at least 200 nm and a diameter between 10 and 200 nm. Moreover, the chemically modified carbon nanotube is preferably adapted to allow differentiation between substrate materials to be probed. Additionally, the chemically modified carbon nanotube is preferably adapted to allow fluorine gas to flow through the chemically modified carbon nanotube onto a substrate to be characterized. Furthermore, the chemically modified carbon nanotube is preferably adapted to chemically react with a substrate surface to be characterized.

    摘要翻译： Y型碳纳米管原子力显微镜探针头和方法包括轴部分; 一对成角度的臂，其从所述轴部的同一端延伸，其中所述轴部和所述一对成角度的臂包括化学改性的碳纳米管，并且其中所述化学改性的碳纳米管用胺，羧基，氟 ，和金属成分。 优选地，一对成角度的臂中的每一个包括至少200nm的长度和10和200nm之间的直径。 此外，化学改性的碳纳米管优选适于允许待探测的基底材料之间的分化。 此外，化学改性的碳纳米管优选适于使氟气通过化学改性的碳纳米管流动到待表征的基底上。 此外，化学改性的碳纳米管优选适于与要表征的基材表面发生化学反应。