摘要:
The melting and solidification furnace for crystalline material includes a crucible having a bottom and side walls, and means for heating the crystalline material by magnetic induction. The furnace includes at least one lateral thermal insulation system arranged at the periphery of the crucible around the side walls. At least one lateral element of the lateral thermal insulation system moves with respect to the side walls between an insulating position and a position fostering thermal leakage. The lateral thermal insulation system has an electric conductivity of less than 1 S/m and a thermal conductivity of less than 15 W/m/K.
摘要翻译:用于结晶材料的熔化和固化炉包括具有底部和侧壁的坩埚和通过磁感应加热结晶材料的装置。 该炉包括至少一个侧壁保温系统,该系统布置在坩埚周围的侧壁周围。 横向热绝缘系统的至少一个横向元件相对于绝缘位置和促进热泄漏的位置之间的侧壁移动。 横向保温系统的导电率小于1S / m,导热率小于15W / m / K。
摘要:
The crystallization system includes a crucible provided with a bottom and with side walls designed to contain the material to be solidified and a device for creating a main thermal gradient inside the crucible in a perpendicular direction to the bottom of the crucible. An additional inductive heating device is arranged at the level of the side walls of the crucible facing the liquid material and without overlapping with the solid phase. This additional inductive heating device is configured to heat a part of the crystalline material located in the vicinity of the triple contact line between the liquid material, the solidified material and the crucible so that the interface between the liquid material and the solidified material forms a convex meniscus in the vicinity of the triple contact line.
摘要:
The crystallization system includes a crucible provided with a bottom and with side walls designed to contain the material to be solidified and a device for creating a main thermal gradient inside the crucible in a perpendicular direction to the bottom of the crucible. An additional inductive heating device is arranged at the level of the side walls of the crucible facing the liquid material and without overlapping with the solid phase. This additional inductive heating device is configured to heat a part of the crystalline material located in the vicinity of the triple contact line between the liquid material, the solidified material and the crucible so that the interface between the liquid material and the solidified material forms a convex meniscus in the vicinity of the triple contact line.
摘要:
The melting and solidification furnace for crystalline material includes a crucible having a bottom and side walls, and means for heating the crystalline material by magnetic induction. The furnace includes at least one lateral thermal insulation system arranged at the periphery of the crucible around the side walls. At least one lateral element of the lateral thermal insulation system moves with respect to the side walls between an insulating position and a position fostering thermal leakage. The lateral thermal insulation system has an electric conductivity of less than 1 S/m and a thermal conductivity of less than 15 W/m/K.
摘要翻译:用于结晶材料的熔化和固化炉包括具有底部和侧壁的坩埚和通过磁感应加热结晶材料的装置。 该炉包括至少一个侧壁保温系统,该系统布置在坩埚周围的侧壁周围。 横向保温系统的至少一个横向元件相对于绝缘位置和促进热泄漏的位置之间的侧壁移动。 横向保温系统的导电率小于1S / m,导热率小于15W / m / K。
摘要:
Wafers of semi-conducting material are formed by moulding and directional crystallization from a liquid mass of this material. A seed, situated at the bottom of the crucible, presents an orientation along non-dense crystallographic planes. The mould is filled with the molten semi-conducting material by means of a piston or by creation of a pressure difference in the device. The mould is preferably coated with a non-wettable anti-adhesive deposit.
摘要:
The present invention relates to a method of assembling carbon parts using a braze based on silicon carbide. The invention also relates to the parts assembled using such a method.
摘要:
The present invention relates to a process for forming a nonstick coating, said coating being formed from grains of silicon carbide, which are surface-coated with a layer of silicon oxide. It also targets the materials having a coating formed by this process.
摘要:
Silicon sintering method, without applying an external force, comprising placement of a silicon sample in a furnace, then heat treatment of this sample at, at least one temperature and at least one partial pressure of oxidising species to control the thickness of a silicon oxide layer on its surface.
摘要:
The present invention relates to a method for forming, on the surface of one of the sides of a silicon substrate, a fibrous layer having a mean lattice pitch of no more than 2 μm, without requiring soaking.The invention also relates to devices, in particular photovoltaic cells, comprising a silicon substrate produced by means of such a method.
摘要:
The invention relates to a photovoltaic cell (1) which includes at least one wafer (2) of a semi-conductor material, with a front surface (21) intended for receiving incident light and a back surface (22) opposite said front surface, as well as to methods for manufacturing said photovoltaic cell. The back surface (22) includes an electric contact (32) and a structure (4), referred to as an optical structure, which is discrete and capable of redirecting the incident light towards the core of the wafer.