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23 条记录 (耗时 0.031 秒)

    Melting-solidification furnace with variable heat exchange via the side walls
    2.
    发明授权
    Melting-solidification furnace with variable heat exchange via the side walls 有权
    熔融凝固炉通过侧壁进行可变的热交换

    公开(公告)号：US09127373B2

    公开(公告)日：2015-09-08

    申请号：US13130188

    申请日：2009-12-04

    申请人： David Pelletier ,  Jean-Paul Garandet

    发明人： David Pelletier ,  Jean-Paul Garandet

    IPC分类号： C30B11/02 ,  C30B11/00 ,  C30B35/00

    CPC分类号： C30B11/003 ,  C30B35/002

    摘要： The melting and solidification furnace for crystalline material includes a crucible having a bottom and side walls, and means for heating the crystalline material by magnetic induction. The furnace includes at least one lateral thermal insulation system arranged at the periphery of the crucible around the side walls. At least one lateral element of the lateral thermal insulation system moves with respect to the side walls between an insulating position and a position fostering thermal leakage. The lateral thermal insulation system has an electric conductivity of less than 1 S/m and a thermal conductivity of less than 15 W/m/K.

    摘要翻译： 用于结晶材料的熔化和固化炉包括具有底部和侧壁的坩埚和通过磁感应加热结晶材料的装置。 该炉包括至少一个侧壁保温系统，该系统布置在坩埚周围的侧壁周围。 横向热绝缘系统的至少一个横向元件相对于绝缘位置和促进热泄漏的位置之间的侧壁移动。 横向保温系统的导电率小于1S / m，导热率小于15W / m / K。

    Photovoltaic Cell Having a Structured Back Surface and Associated Manufacturing Method
    8.
    发明申请
    Photovoltaic Cell Having a Structured Back Surface and Associated Manufacturing Method 审中-公开
    具有结构背面的光伏电池及相关制造方法

    公开(公告)号：US20130098437A1

    公开(公告)日：2013-04-25

    申请号：US13695449

    申请日：2011-05-03

    申请人： Philippe Thony ,  Nicolas Chaix ,  Jean-Paul Garandet

    发明人： Philippe Thony ,  Nicolas Chaix ,  Jean-Paul Garandet

    IPC分类号： H01L31/0216 ,  H01L31/0232

    CPC分类号： H01L31/0216 ,  H01L31/022425 ,  H01L31/0232 ,  H01L31/056 ,  Y02E10/52

    摘要： The invention relates to a photovoltaic cell (1) which includes at least one wafer (2) of a semi-conductor material, with a front surface (21) intended for receiving incident light and a back surface (22) opposite said front surface, as well as to methods for manufacturing said photovoltaic cell. The back surface (22) includes an electric contact (32) and a structure (4), referred to as an optical structure, which is discrete and capable of redirecting the incident light towards the core of the wafer.

    摘要翻译： 本发明涉及一种包括半导体材料的至少一个晶片（2）的光伏电池（1），具有用于接收入射光的前表面（21）和与所述前表面相对的后表面（22） 以及制造所述光伏电池的方法。 后表面（22）包括被称为光学结构的电触点（32）和结构（4），该结构是离散的并且能够将入射光重定向到晶片的芯。

    PHOTOVOLTAIC CELL WITH DISTRIBUTED EMITTER IN A SUBSTRATE, AND METHOD FOR MANUFACTURE OF SUCH A CELL
    10.
    发明申请
    PHOTOVOLTAIC CELL WITH DISTRIBUTED EMITTER IN A SUBSTRATE, AND METHOD FOR MANUFACTURE OF SUCH A CELL 审中-公开
    在基板中具有分布式发射体的光电池，以及用于制造这种电池的方法

    公开(公告)号：US20110220193A1

    公开(公告)日：2011-09-15

    申请号：US13129582

    申请日：2009-11-20

    申请人： Jean-Paul Garandet ,  Luc Federzoni ,  Yannick Veschetti

    发明人： Jean-Paul Garandet ,  Luc Federzoni ,  Yannick Veschetti

    IPC分类号： H01L31/0352 ,  H01L31/18

    CPC分类号： H01L31/03529 ,  H01L31/0384 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A photovoltaic cell including a substrate composed of a semiconductor of a first type of conductivity including two main faces substantially parallel with one another, the substrate including a plurality of blind holes, openings of which are positioned in a single one of the two main faces, and the blind holes filled by a semiconductor of a second type of conductivity opposed to the first type of conductivity forming an emitter of the photovoltaic cell. The substrate forms a base of the photovoltaic cell. First collector pins composed of a semiconductor of the second type of conductivity are in contact with the emitter of the photovoltaic cell, and second collector pins composed of a semiconductor of the first type of conductivity are in contact with the substrate and interdigitated with the first collector pins.

    摘要翻译： 一种光电池，包括由包括彼此大致平行的两个主面的第一导电类型的半导体构成的衬底，所述衬底包括多个盲孔，其开口位于所述两个主面中的单个一个面中， 并且盲孔由与形成光伏电池的发射极的第一类导电性相反的第二类型导电体的半导体填充。 衬底形成光伏电池的基极。 由第二导电类型的半导体构成的第一集电极引脚与光伏电池的发射极接触，由第一导电类型的半导体组成的第二集电极与基板接触，并与第一集电极 针脚。