公开(公告)号：US06301279B1

公开(公告)日：2001-10-09

申请号：US09430643

申请日：1999-10-29

申请人： Dmitri Zalmanovich Garbuzov ,  Mikhail Alexandrovich Maiorov ,  Viktor Borisovich Khalfin ,  John Charles Connolly

发明人： Dmitri Zalmanovich Garbuzov ,  Mikhail Alexandrovich Maiorov ,  Viktor Borisovich Khalfin ,  John Charles Connolly

IPC分类号： H01S304

CPC分类号： H01S5/0261 ,  H01S5/024 ,  H01S5/06804

摘要： A semiconductor diode laser with thermal sensor control comprises a heat sink, a diode-laser structure, and a thermal sensor thermally coupled to said diode-laser structure in a place where the temperature gradient across the semiconductor diode laser is close to zero.

摘要翻译： 具有热传感器控制的半导体二极管激光器包括散热器，二极管激光器结构和热耦合到所述二极管 - 激光器结构的热传感器，其中半导体二极管激光器的温度梯度接近于零。

公开(公告)号：US06650671B1

公开(公告)日：2003-11-18

申请号：US09553551

申请日：2000-04-20

申请人： Dmitri Zalmanovich Garbuzov ,  Viktor Borisovich Khalfin ,  John Charles Connolly

发明人： Dmitri Zalmanovich Garbuzov ,  Viktor Borisovich Khalfin ,  John Charles Connolly

IPC分类号： H01S500

CPC分类号： H01S5/20 ,  H01S5/2004 ,  H01S5/3211 ,  H01S2301/18

摘要： A semiconductor diode laser has a characteristic output with a single mode vertical far-field divergence. The semiconductor diode laser includes a waveguide with a first refractive index and a quantum well embedded in the center of the waveguide. On one side of the waveguide sits a p-type cladding layer with a second refractive index smaller than the first refractive index. On the other side of the waveguide sits an n-type cladding layer with a third refractive index smaller than the first refractive index and larger than the second refractive index.

摘要翻译： 半导体二极管激光器具有单模垂直远场发散的特征输出。 半导体二极管激光器包括具有第一折射率的波导和量子阱嵌入在波导的中心。 在波导的一侧设置具有小于第一折射率的第二折射率的p型包覆层。 在波导的另一侧设置具有小于第一折射率且大于第二折射率的第三折射率的n型包覆层。

公开(公告)号：US06330263B1

公开(公告)日：2001-12-11

申请号：US09106705

申请日：1998-06-29

申请人： Dmitri Zalmanovich Garbuzov ,  John Charles Connolly ,  Viktor Borisovich Khalfin ,  Hao Lee

发明人： Dmitri Zalmanovich Garbuzov ,  John Charles Connolly ,  Viktor Borisovich Khalfin ,  Hao Lee

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/343 ,  H01S5/34306

摘要： A semiconductor laser device with separated, highly-strained quantum wells employs highly-strained ternary and quasi-ternary compounds as material for each quantum well. A first device structure includes a quantum well composition range extended from strained ternary compounds employed in conventional quantum well laser devices. A second device structure, employing a similar structure to that of the first device, employs new quasi-ternary compounds with compositions outside of the miscibility gap of corresponding quaternary compounds for quantum wells in GaSb— or InAs-based laser devices which extend performance of mid-infrared laser devices operating in the 2.2-4.0 &mgr;m range. The semiconductor diode laser may be formed so as to operate having a multi-mode or single-mode radiation.

摘要翻译： 具有分离的高应变量子阱的半导体激光器件采用高应变三元和准三元化合物作为每个量子阱的材料。 第一器件结构包括从用于常规量子阱激光器件的应变三元化合物扩展的量子阱组成范围。 采用与第一器件类似的结构的第二器件结构采用新型准三元化合物，其具有在GaSb或InAs基激光器件中用于量子阱的相应季铵化合物的混合间隙之外的组成的新的准三元化合物，其延长了中间 - 红外激光设备工作在2.2-4.0 mum范围内。 半导体二极管激光器可以形成为具有多模或单模辐射的操作。

公开(公告)号：US06556611B1

公开(公告)日：2003-04-29

申请号：US09468396

申请日：1999-12-20

申请人： Viktor Borisovich Khalfin ,  Dmitri Zalmanovich Garbuzov ,  Louis Anthony DiMarco ,  John Charles Connolly

发明人： Viktor Borisovich Khalfin ,  Dmitri Zalmanovich Garbuzov ,  Louis Anthony DiMarco ,  John Charles Connolly

IPC分类号： H01S308

CPC分类号： H01S5/20 ,  H01S5/0655 ,  H01S5/125 ,  H01S5/2036 ,  H01S5/4025 ,  H01S5/50

摘要： A diode laser comprises a laser cavity defining a linear optical-path axis, and a current-pumped stripe region, said current-pumped stripe region being disposed within said laser cavity. The laser cavity includes an output surface perpendicular to the optical axis; and a reflection surface including a distributed Bragg reflector (DBR) grating and being disposed at a non-perpendicular angle to the optical-path axis.

摘要翻译： 二极管激光器包括限定线性光路轴的激光腔和电流泵浦条纹区域，所述电流泵浦条纹区域设置在所述激光腔内。 激光腔包括垂直于光轴的输出表面; 以及包括分布布拉格反射器（DBR）光栅并且以与光路轴线成非垂直角度的方式设置的反射面。

公开(公告)号：US06459715B1

公开(公告)日：2002-10-01

申请号：US09546086

申请日：2000-04-10

申请人： Viktor Borisovich Khalfin ,  Dmitri Zalmanovich Garbuzov ,  Louis Anthony DiMarco ,  John Charles Connolly

发明人： Viktor Borisovich Khalfin ,  Dmitri Zalmanovich Garbuzov ,  Louis Anthony DiMarco ,  John Charles Connolly

IPC分类号： H01S500

CPC分类号： H01S5/50 ,  H01S5/026 ,  H01S5/0655 ,  H01S5/125 ,  H01S5/20 ,  H01S5/2036 ,  H01S5/4025

摘要： An apparatus includes a single-mode master-oscillator section and a power amplifier section. The single-mode master-oscillator section includes a waveguide defined by a first end and a second end, the first end including a first distributed Bragg reflector mirror, and the second end including a second distributed Bragg reflector mirror. The single-mode-master-oscillator section also has a first longitudinal axis. The power amplifier section is a broad-contact amplifier coupled to the single-mode-master-oscillator section by a coupling grating that is contained in the waveguide of the single-mode-master-oscillator section. The broad contact amplifier section includes a reflection side, an output side and a second longitudinal axis, the second longitudinal axis being at an angle approximately (90°−&bgr;) to said first longitudinal axis, &bgr; being in a range between 0° and approximately 20°.

摘要翻译： 一种装置包括单模式主振荡器部分和功率放大器部分。 单模式主振荡器部分包括由第一端和第二端限定的波导，第一端包括第一分布布拉格反射镜，第二端包括第二分布布拉格反射镜。 单模 - 主振荡器部分还具有第一纵轴。 功率放大器部分是通过耦合光栅耦合到单模 - 主振荡器部分的宽接触放大器，其包含在单模 - 主振荡器部分的波导中。 宽接触放大器部分包括反射侧，输出侧和第二纵向轴线，第二纵向轴线与所述第一纵向轴线成大约（90°-β）的角度，β在0°和大约 20°。

公开(公告)号：USRE41643E1

公开(公告)日：2010-09-07

申请号：US10778019

申请日：2004-02-13

申请人： Dmitri Zalmanovich Garbuzov ,  Joseph Hy Abeles ,  John Charles Connolly

发明人： Dmitri Zalmanovich Garbuzov ,  Joseph Hy Abeles ,  John Charles Connolly

IPC分类号： H01S5/00

CPC分类号： H01S5/20 ,  B82Y20/00 ,  H01S5/2031 ,  H01S5/305 ,  H01S5/34306

摘要： A semiconductor laser diode having increased efficiency and therefore increased power output. The laser diode includes a body of a semiconductor material having therein a waveguide region which is not intentionally doped so as to have a doping level of no greater than about 5×1016/cm3. Within the waveguide region is means, such as at least one quantum well region, for generating an optical mode of photons. Clad regions of opposite conductivity type are on opposite sides of the waveguide region. The thickness of the waveguide region, a thickness of at least 500 nanometers, and the composition of the waveguide and the clad regions are such so as to provide confinement of the optical mode in the waveguide region to the extent that the optical mode generating does not overlap into the clad regions from the waveguide region more than about 5%.

摘要翻译： 半导体激光二极管具有增加的效率并因此增加功率输出。 激光二极管包括半导体材料体，其中具有不是有意掺杂的波导区域，以便具有不大于约5×10 16 / cm 3的掺杂水平。 在波导区域内是用于产生光学光学模式的装置，例如至少一个量子阱区域。 相反导电类型的包层区域在波导区域的相对侧上。 波导区域的厚度，至少500纳米的厚度以及波导和包层区域的组成是这样的，以便将波导区域中的光学模式限制到光学模式产生不会 从波导区域重叠到包层区域大于约5％。

公开(公告)号：US6133520A

公开(公告)日：2000-10-17

申请号：US190674

申请日：1998-11-12

申请人： Dmitri Zalmanovich Garbuzov ,  Victor Borisovich Khalfin ,  Ramon Ubaldo Martinelli ,  Hao Lee ,  Nancy Ann Morris ,  John Charles Connolly

发明人： Dmitri Zalmanovich Garbuzov ,  Victor Borisovich Khalfin ,  Ramon Ubaldo Martinelli ,  Hao Lee ,  Nancy Ann Morris ,  John Charles Connolly

IPC分类号： H01L31/0735 ,  H01L31/109

CPC分类号： H01L31/0735 ,  Y02E10/544

摘要： A thermophotovoltaic cell and diode photodetector having improved open circuit voltage and high internal efficiency includes a semiconductor body having regions of n-type conductivity and p-type conductivity adjacent each other to form a p-n junction therebetween. The p-type region is of a material having a band gap which will absorb black-body radiation and the n-type region is of a material having a wider band gap than that of the p-type region. This forms a heterojunction between the two regions. The region of n-type region has a doping level which is an order of magnitude less than the doping level in the p-type region. This structure forms a cell having a space charge region in the n-type region.

摘要翻译： 具有改进的开路电压和高内部效率的热光伏电池和二极管光电检测器包括具有相邻的n型导电性和p型导电区域的半导体本体，以在它们之间形成p-n结。 p型区域是具有能够吸收黑体辐射的带隙的材料，并且n型区域是具有比p型区域更宽的带隙的材料。 这形成了两个区域之间的异质结。 n型区域的区域具有比p型区域中的掺杂水平小一个数量级的掺杂水平。 这种结构形成在n型区域中具有空间电荷区域的单元。

公开(公告)号：US06366018B1

公开(公告)日：2002-04-02

申请号：US09420905

申请日：1999-10-20

申请人： Dmitri Zalmanovich Garbuzov ,  John Charles Connolly ,  Robert Frank Karlicek, Jr. ,  Ian Thomas Ferguson

发明人： Dmitri Zalmanovich Garbuzov ,  John Charles Connolly ,  Robert Frank Karlicek, Jr. ,  Ian Thomas Ferguson

IPC分类号： H01J4312

CPC分类号： H01L33/50 ,  H01L27/153 ,  H01L33/10 ,  H01L33/20 ,  H01L33/46

摘要： An apparatus, comprises an active region, a phosphor layer and a reflective layer. The active region is configured to emit light having a first band of wavelengths from a first group of wavelengths. The phosphor layer is disposed between and in contact with the active region and an exterior medium. The phosphor layer is configured to convert the first band of wavelengths of light emitted from the active region to a second band of wavelengths. A center wavelength of the second band of wavelengths is greater than a center wavelength of the first band of wavelengths. The reflective layer is optically coupled to the active region. The active region is disposed between the reflective layer and the phosphor layer. The reflective layer is configured to reflect at least the first band of wavelengths and the second band of wavelengths.

摘要翻译： 一种装置，包括有源区，荧光层和反射层。 有源区被配置为发射具有来自第一组波长的第一波长波段的光。 磷光体层设置在活性区域和外部介质之间并与其接触。 磷光体层被配置为将从有源区发射的光的第一波长带转换成第二波长带。 第二波长带的中心波长大于第一波长带的中心波长。 反射层光耦合到有源区。 有源区设置在反射层和荧光体层之间。 反射层被配置为反射至少第一波长带和第二波长带。

公开(公告)号：US06404125B1

公开(公告)日：2002-06-11

申请号：US09421584

申请日：1999-10-20

申请人： Dmitri Zalmanovich Garbuzov ,  John Charles Connolly ,  Robert Frank Karlicek, Jr. ,  Ian Thomas Ferguson

发明人： Dmitri Zalmanovich Garbuzov ,  John Charles Connolly ,  Robert Frank Karlicek, Jr. ,  Ian Thomas Ferguson

IPC分类号： H05B3302

CPC分类号： H01L33/502 ,  H01L27/156 ,  H01L33/10 ,  H01L33/20 ,  H01L33/46

摘要： An apparatus comprises an active region, a phosphor layer and a substrate. The active region is configured to emit light having a first band of wavelengths selected from a first group of wavelengths. The phosphor layer has a first refractive index. The phosphor layer includes a plurality of wavelength-converting phosphors. The phosphor layer is configured to convert the first band of wavelengths of light emitted from the active region to a second band of wavelengths. A center wavelength of the second band of wavelengths is greater than a center wavelength of the first band of wavelengths. The substrate is disposed between and in contact with the active region and the phosphor layer. The substrate has a second refractive index. The first refractive index substantially equals the second refractive index.

摘要翻译： 一种装置包括有源区，磷光体层和衬底。 有源区被配置为发射具有选自第一组波长的第一波长波段的光。 荧光体层具有第一折射率。 磷光体层包括多个波长转换荧光体。 磷光体层被配置为将从有源区发射的光的第一波长带转换成第二波长带。 第二波长带的中心波长大于第一波长带的中心波长。 衬底设置在有源区域和磷光体层之间并与其接触。 衬底具有第二折射率。 第一折射率基本上等于第二折射率。

公开(公告)号：US07084444B2

公开(公告)日：2006-08-01

申请号：US10471794

申请日：2001-03-19

申请人： Dmitri Zalmanovich Garbuzov ,  Raymond J. Menna

发明人： Dmitri Zalmanovich Garbuzov ,  Raymond J. Menna

IPC分类号： H01L29/861

CPC分类号： B82Y20/00 ,  H01S5/2009 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/34306

摘要： A method for improving the efficiency for an optoelectronic device, such as semiconductor lasers, Superluminescence Light Emitting Diodes (SLDs), Gain Chips, optical amplifiers is disclosed, see FIG. 4B. In accordance with the principles of the invention, at least one blocking layer (70) is interposed at the interface between materials composing the device. The at least one blocking layers creates a barrier that prevents the leakage of electrons from a device active region contained in the waveguide region, to a device clad region (66). In one aspect of the invention, a blocking layer (70) is formed at the junction of the semiconductor materials having different types of conductivity. The blocking layer prevents electrons from entering the material of a different polarity. In another aspect of the invention, a low-doped or undoped region (64) is positioned adjacent to the blocking layer (70) to decrease optical losses.

摘要翻译： 公开了一种用于提高诸如半导体激光器，超发光发光二极管（SLD），增益芯片，光放大器之类的光电子器件的效率的方法。 根据本发明的原理，至少一个阻挡层（70）插入在构成该装置的材料之间的界面处。 至少一个阻挡层产生防止电子从包含在波导区域中的器件有源区域泄漏到器件覆盖区域（66）的势垒。 在本发明的一个方面，在具有不同导电性的半导体材料的接合处形成阻挡层（70）。 阻挡层防止电子进入不同极性的材料。 在本发明的另一方面，低掺杂或未掺杂区域（64）定位成与阻挡层（70）相邻以减小光学损耗。