公开(公告)号：US07827930B2

公开(公告)日：2010-11-09

申请号：US11043442

申请日：2005-01-26

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Russell Ellwanger ,  Ian A. Pancham ,  Ramakrishna Cheboli ,  Timothy W. Weidman

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Russell Ellwanger ,  Ian A. Pancham ,  Ramakrishna Cheboli ,  Timothy W. Weidman

IPC分类号： B05C3/02

CPC分类号： H01L21/67155 ,  C23C18/1628 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/6723

摘要： An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure. The system also includes a substrate a fluid delivery system that is configured to deliver a processing fluid by use of a spraying process to a substrate mounted in the processing enclosure.

摘要翻译： 提供无电沉积系统。 该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。 无电沉积站包括环境受控的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站，以及位于 在第一和第二处理站之间传送衬底。 该系统还包括位于主机上并被配置为访问处理外壳内部的基板传送机器人。 该系统还包括一个流体输送系统，该流体输送系统被配置成通过使用喷射过程将处理流体输送到安装在处理外壳中的基板。

公开(公告)号：US07323058B2

公开(公告)日：2008-01-29

申请号：US10996342

申请日：2004-11-22

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Russell Ellwanger ,  Ian A. Pancham ,  Ramakrishna Cheboli

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Russell Ellwanger ,  Ian A. Pancham ,  Ramakrishna Cheboli

IPC分类号： B05C3/02

CPC分类号： C23C18/1632 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/6723 ,  H01L21/68742 ,  H01L21/68771 ,  H01L21/68792 ,  Y10S134/902

摘要： An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure.

摘要翻译： 提供无电沉积系统。 该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。 无电沉积站包括环境受控的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站，以及位于 在第一和第二处理站之间传送衬底。 该系统还包括位于主机上并被配置为访问处理外壳内部的基板传送机器人。

公开(公告)号：US20050263066A1

公开(公告)日：2005-12-01

申请号：US11043442

申请日：2005-01-26

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Russell Ellwanger ,  Ian Pancham ,  Ramakrishna Cheboli ,  Timothy Weidman

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Russell Ellwanger ,  Ian Pancham ,  Ramakrishna Cheboli ,  Timothy Weidman

IPC分类号： B05D3/10 ,  C23C18/16 ,  C23F1/00 ,  H01L21/00 ,  H01L21/306

CPC分类号： H01L21/67155 ,  C23C18/1628 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/6723

摘要： An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure. The system also includes a substrate a fluid delivery system that is configured to deliver a processing fluid by use of a spraying process to a substrate mounted in the processing enclosure.

摘要翻译： 提供无电沉积系统。 该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。 无电沉积站包括环境受控的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站，以及位于 在第一和第二处理站之间传送衬底。 该系统还包括位于主机上并被配置为访问处理外壳内部的基板传送机器人。 该系统还包括一个流体输送系统，该流体输送系统被配置成通过使用喷射过程将处理流体输送到安装在处理外壳中的基板。

公开(公告)号：US20050160990A1

公开(公告)日：2005-07-28

申请号：US10996342

申请日：2004-11-22

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Russell Ellwanger ,  Ian Pancham ,  Ramakrishna Cheboli

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Russell Ellwanger ,  Ian Pancham ,  Ramakrishna Cheboli

IPC分类号： C23C18/16 ,  H01L21/00 ,  H01L21/288 ,  H01L21/687 ,  C23C16/00 ,  C23F1/00

CPC分类号： C23C18/1632 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/6723 ,  H01L21/68742 ,  H01L21/68771 ,  H01L21/68792 ,  Y10S134/902

摘要： An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure.

摘要翻译： 提供无电沉积系统。 该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。 无电沉积站包括环境受控的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站，以及位于 在第一和第二处理站之间传送衬底。 该系统还包括位于主机上并被配置为访问处理外壳内部的基板传送机器人。

公开(公告)号：US07205233B2

公开(公告)日：2007-04-17

申请号：US10703769

申请日：2003-11-07

申请人： Sergey Lopatin ,  Arulkumar Shanmugasundram ,  Dmitry Lubomirsky ,  Ian A. Pancham

发明人： Sergey Lopatin ,  Arulkumar Shanmugasundram ,  Dmitry Lubomirsky ,  Ian A. Pancham

IPC分类号： H01L21/28

CPC分类号： H01L21/76846 ,  C23C18/1651 ,  C23C18/1692 ,  C23C18/1844 ,  C23C18/50 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76874

摘要： A method for fabricating a capping layer with enhanced barrier resistance to both copper and oxygen diffusion, comprises forming a capping layer on a conductive surface of an interconnect, wherein the capping layer comprises cobalt (Co), tungsten (W), rhenium (Re), and at least one of phosphorus (P) and boron (B). In an embodiment of the invention, forming the capping layer comprises exposing the conductive surface to an electroless capping solution comprising a cobalt source, a tungsten source, a rhenium source, and at least one of a phosphorus source and a boron source, and annealing the capping layer.

摘要翻译： 一种用于制造具有对铜和氧扩散的阻挡性能增强的覆盖层的方法，包括在互连的导电表面上形成覆盖层，其中所述覆盖层包括钴（Co），钨（W），铼（Re） ，和磷（P）和硼（B）中的至少一种。 在本发明的一个实施方案中，形成覆盖层包括将导电表面暴露于包含钴源，钨源，铼源和磷源和硼源中的至少一个的无电覆盖溶液中，并将 盖层

公开(公告)号：US07341633B2

公开(公告)日：2008-03-11

申请号：US10965220

申请日：2004-10-14

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Ian A. Pancham ,  Sergey Lopatin

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Ian A. Pancham ,  Sergey Lopatin

IPC分类号： B05C3/09 ,  B05C13/02

CPC分类号： H01L21/76838 ,  C23C18/1601 ,  C23C18/1619 ,  C23C18/1628 ,  C23C18/1678 ,  C23C18/1682 ,  C23C18/1872 ,  C23C18/28 ,  H01L21/288 ,  Y10S134/902

摘要： Embodiments of the invention generally provide a fluid processing platform. The platform includes a mainframe having a substrate transfer robot, at least one substrate cleaning cell on the mainframe, and at least one processing enclosure. The processing enclosure includes a gas supply positioned in fluid communication with an interior of the processing enclosure, a first fluid processing cell positioned in the enclosure, a first substrate head assembly positioned to support a substrate for processing in the first fluid processing cell, a second fluid processing cell positioned in the enclosure, a second head assembly positioned to support a substrate for processing in the second fluid processing cell, and a substrate shuttle positioned between the first and second fluid processing cells and being configured to transfer substrates between the fluid processing cells and the mainframe robot.

摘要翻译： 本发明的实施例通常提供流体处理平台。 平台包括具有基板传送机器人的主机，主机上的至少一个基板清洁单元，以及至少一个处理机壳。 处理外壳包括定位成与处理外壳的内部流体连通的气体供应源，位于外壳中的第一流体处理单元，定位成支撑基板以在第一流体处理单元中进行处理的第一基板头组件，第二流体处理单元 位于外壳中的流体处理单元，定位成支撑用于在第二流体处理单元中进行处理的基板的第二头部组件，以及位于第一和第二流体处理单元之间的衬底梭，并且构造成将衬底在流体处理单元 和主机机器人。

公开(公告)号：US07654221B2

公开(公告)日：2010-02-02

申请号：US11175251

申请日：2005-07-06

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Ian A. Pancham

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Ian A. Pancham

IPC分类号： B05C13/00

CPC分类号： H01L21/68728 ,  C23C18/1619 ,  C23C18/1632 ,  C23C26/00 ,  C23C26/02 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/68735 ,  H01L21/68792

摘要： An electroless deposition system and electroless deposition stations are provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate shuttle positioned to transfer substrates between the first and second processing stations. The electroless deposition station also includes various fluid delivery and substrate temperature controlling devices to perform a contamination free and uniform electroless deposition process.

摘要翻译： 提供无电沉积系统和无电沉积站。 该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。 无电沉积站包括环境受控的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站和定位成转移的基板梭 第一和第二处理站之间的基板。 无电沉积站还包括各种流体输送和基板温度控制装置，以执行无污染和均匀的无电沉积工艺。

公开(公告)号：US20050181226A1

公开(公告)日：2005-08-18

申请号：US11040962

申请日：2005-01-22

申请人： Timothy Weidman ,  Ian Pancham ,  Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Yosef Shacham-Diamand ,  Farhad Moghadam

发明人： Timothy Weidman ,  Ian Pancham ,  Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Yosef Shacham-Diamand ,  Farhad Moghadam

IPC分类号： C23C18/16 ,  C23C18/50 ,  H01L21/02 ,  H01L21/288 ,  H01L21/768 ,  B05C3/00 ,  B05D1/18

CPC分类号： C23C18/1683 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/50 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76874 ,  Y10T428/12

摘要： A method and apparatus for electrolessly depositing a multilayer film using a fluid processing solution(s) that can clean and then electrolessly deposit a metal films having discrete or varying composition onto a conductive surface using a single processing cell. The process advantageously includes in-situ cleaning step in order to minimize the formation of oxides on the conductive surfaces, by minimizing or preventing the exposure of the conductive surfaces to oxygen (e.g., air) between the cleaning step and an electroless deposition process step(s). In one aspect, the chemical components used in the fluid processing solution(s) are selected so that the interaction of various chemical components will not drastically change the desirable properties of each of the interacting fluids, generate particles in the fluid lines or on the surface of the substrate, and/or generate a significant amount of heat which can damage the hardware or significantly change the electroless process results. In another aspect, no rinsing steps are required between the various deposition steps used to form the various layers, since the processing fluids are selected so that they are compatible with each other. In another aspect, throughout the process the conductive surfaces are continually in contact with various chemical components that will inhibit oxidation of the conductive surfaces and/or reduce the oxidized metal surfaces. In one aspect, a multilayer structure can formed on the surface of the conductive surface using the continuous electroless deposition process where the first layer of the multilayer structure has at least two of the following elements cobalt (Co), tungsten (W), phosphorus (P) or boron (B); and a second layer contains at least two of the following elements cobalt (Co), boron (B) or phosphorus (P). Formation of a multilayer structure on the conductive surface may have advantage since each deposited layer can have differing properties which when placed together will form a layer that has improved properties over a single deposited layer.

公开(公告)号：US20050081785A1

公开(公告)日：2005-04-21

申请号：US10965220

申请日：2004-10-14

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Ian Pancham ,  Sergey Lopatin

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Ian Pancham ,  Sergey Lopatin

IPC分类号： B05C3/00 ,  B05C19/02 ,  C23C18/16 ,  C23C18/28 ,  C23F1/00 ,  C25D7/12 ,  H01L21/288 ,  H01L21/768

CPC分类号： H01L21/76838 ,  C23C18/1601 ,  C23C18/1619 ,  C23C18/1628 ,  C23C18/1678 ,  C23C18/1682 ,  C23C18/1872 ,  C23C18/28 ,  H01L21/288 ,  Y10S134/902

摘要： Embodiments of the invention generally provide a fluid processing platform. The platform includes a mainframe having a substrate transfer robot, at least one substrate cleaning cell on the mainframe, and at least one processing enclosure. The processing enclosure includes a gas supply positioned in fluid communication with an interior of the processing enclosure, a first fluid processing cell positioned in the enclosure, a first substrate head assembly positioned to support a substrate for processing in the first fluid processing cell, a second fluid processing cell positioned in the enclosure, a second head assembly positioned to support a substrate for processing in the second fluid processing cell, and a substrate shuttle positioned between the first and second fluid processing cells and being configured to transfer substrates between the fluid processing cells and the mainframe robot.

摘要翻译： 本发明的实施例通常提供流体处理平台。 平台包括具有基板传送机器人的主机，主机上的至少一个基板清洁单元，以及至少一个处理机壳。 处理外壳包括定位成与处理外壳的内部流体连通的气体供应源，位于外壳中的第一流体处理单元，定位成支撑基板以在第一流体处理单元中进行处理的第一基板头组件，第二流体处理单元 位于外壳中的流体处理单元，定位成支撑用于在第二流体处理单元中进行处理的基板的第二头部组件，以及位于第一和第二流体处理单元之间的衬底梭，并且构造成将衬底在流体处理单元 和主机机器人。

公开(公告)号：US07473339B2

公开(公告)日：2009-01-06

申请号：US10826489

申请日：2004-04-16

申请人： Allen L. D'Ambra ,  Arulkumar Shanmugasundram ,  Michael X. Yang ,  Yevgeniy (Eugene) Rabinovich ,  Dmitry Lubomirsky

发明人： Allen L. D'Ambra ,  Arulkumar Shanmugasundram ,  Michael X. Yang ,  Yevgeniy (Eugene) Rabinovich ,  Dmitry Lubomirsky

IPC分类号： C25D17/00 ,  C25D21/14 ,  C25D7/12

CPC分类号： C25D17/00

摘要： Embodiments of the invention generally provide a fluid delivery system for an electrochemical plating platform. The fluid delivery system is configured to supply multiple chemistries to multiple plating cells with minimal bubble formation in the fluid delivery system. The system includes a solution mixing system, a fluid distribution manifold in communication with the solution mixing system, a plurality of fluid conduits in fluid communication with the fluid distribution manifold, and a plurality of fluid tanks, each of the plurality of fluid tanks being in fluid communication with at least one of the plurality of fluid conduits.

摘要翻译： 本发明的实施方案通常提供用于电化学电镀平台的流体输送系统。 流体输送系统被配置为在流体输送系统中以最小的气泡形成向多个电镀单元提供多个化学物质。 该系统包括溶液混合系统，与溶液混合系统连通的流体分配歧管，与流体分配歧管流体连通的多个流体导管和多个流体箱，多个流体箱中的每一个处于 与多个流体导管中的至少一个流体连通。