公开(公告)号：US20050181226A1

公开(公告)日：2005-08-18

申请号：US11040962

申请日：2005-01-22

申请人： Timothy Weidman ,  Ian Pancham ,  Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Yosef Shacham-Diamand ,  Farhad Moghadam

发明人： Timothy Weidman ,  Ian Pancham ,  Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Yosef Shacham-Diamand ,  Farhad Moghadam

IPC分类号： C23C18/16 ,  C23C18/50 ,  H01L21/02 ,  H01L21/288 ,  H01L21/768 ,  B05C3/00 ,  B05D1/18

CPC分类号： C23C18/1683 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/50 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76874 ,  Y10T428/12

摘要： A method and apparatus for electrolessly depositing a multilayer film using a fluid processing solution(s) that can clean and then electrolessly deposit a metal films having discrete or varying composition onto a conductive surface using a single processing cell. The process advantageously includes in-situ cleaning step in order to minimize the formation of oxides on the conductive surfaces, by minimizing or preventing the exposure of the conductive surfaces to oxygen (e.g., air) between the cleaning step and an electroless deposition process step(s). In one aspect, the chemical components used in the fluid processing solution(s) are selected so that the interaction of various chemical components will not drastically change the desirable properties of each of the interacting fluids, generate particles in the fluid lines or on the surface of the substrate, and/or generate a significant amount of heat which can damage the hardware or significantly change the electroless process results. In another aspect, no rinsing steps are required between the various deposition steps used to form the various layers, since the processing fluids are selected so that they are compatible with each other. In another aspect, throughout the process the conductive surfaces are continually in contact with various chemical components that will inhibit oxidation of the conductive surfaces and/or reduce the oxidized metal surfaces. In one aspect, a multilayer structure can formed on the surface of the conductive surface using the continuous electroless deposition process where the first layer of the multilayer structure has at least two of the following elements cobalt (Co), tungsten (W), phosphorus (P) or boron (B); and a second layer contains at least two of the following elements cobalt (Co), boron (B) or phosphorus (P). Formation of a multilayer structure on the conductive surface may have advantage since each deposited layer can have differing properties which when placed together will form a layer that has improved properties over a single deposited layer.

公开(公告)号：US20050263066A1

公开(公告)日：2005-12-01

申请号：US11043442

申请日：2005-01-26

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Russell Ellwanger ,  Ian Pancham ,  Ramakrishna Cheboli ,  Timothy Weidman

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Russell Ellwanger ,  Ian Pancham ,  Ramakrishna Cheboli ,  Timothy Weidman

IPC分类号： B05D3/10 ,  C23C18/16 ,  C23F1/00 ,  H01L21/00 ,  H01L21/306

CPC分类号： H01L21/67155 ,  C23C18/1628 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/6723

摘要： An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure. The system also includes a substrate a fluid delivery system that is configured to deliver a processing fluid by use of a spraying process to a substrate mounted in the processing enclosure.

摘要翻译： 提供无电沉积系统。 该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。 无电沉积站包括环境受控的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站，以及位于 在第一和第二处理站之间传送衬底。 该系统还包括位于主机上并被配置为访问处理外壳内部的基板传送机器人。 该系统还包括一个流体输送系统，该流体输送系统被配置成通过使用喷射过程将处理流体输送到安装在处理外壳中的基板。

公开(公告)号：US20050081785A1

公开(公告)日：2005-04-21

申请号：US10965220

申请日：2004-10-14

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Ian Pancham ,  Sergey Lopatin

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Ian Pancham ,  Sergey Lopatin

IPC分类号： B05C3/00 ,  B05C19/02 ,  C23C18/16 ,  C23C18/28 ,  C23F1/00 ,  C25D7/12 ,  H01L21/288 ,  H01L21/768

CPC分类号： H01L21/76838 ,  C23C18/1601 ,  C23C18/1619 ,  C23C18/1628 ,  C23C18/1678 ,  C23C18/1682 ,  C23C18/1872 ,  C23C18/28 ,  H01L21/288 ,  Y10S134/902

摘要： Embodiments of the invention generally provide a fluid processing platform. The platform includes a mainframe having a substrate transfer robot, at least one substrate cleaning cell on the mainframe, and at least one processing enclosure. The processing enclosure includes a gas supply positioned in fluid communication with an interior of the processing enclosure, a first fluid processing cell positioned in the enclosure, a first substrate head assembly positioned to support a substrate for processing in the first fluid processing cell, a second fluid processing cell positioned in the enclosure, a second head assembly positioned to support a substrate for processing in the second fluid processing cell, and a substrate shuttle positioned between the first and second fluid processing cells and being configured to transfer substrates between the fluid processing cells and the mainframe robot.

摘要翻译： 本发明的实施例通常提供流体处理平台。 平台包括具有基板传送机器人的主机，主机上的至少一个基板清洁单元，以及至少一个处理机壳。 处理外壳包括定位成与处理外壳的内部流体连通的气体供应源，位于外壳中的第一流体处理单元，定位成支撑基板以在第一流体处理单元中进行处理的第一基板头组件，第二流体处理单元 位于外壳中的流体处理单元，定位成支撑用于在第二流体处理单元中进行处理的基板的第二头部组件，以及位于第一和第二流体处理单元之间的衬底梭，并且构造成将衬底在流体处理单元 和主机机器人。

公开(公告)号：US20050260345A1

公开(公告)日：2005-11-24

申请号：US11175251

申请日：2005-07-06

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Ian Pancham

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Ian Pancham

IPC分类号： B05C11/02 ,  B05C13/00 ,  B05D3/12 ,  C23C18/16 ,  C23C26/00 ,  C23C26/02 ,  H01L21/00 ,  H01L21/687

CPC分类号： H01L21/68728 ,  C23C18/1619 ,  C23C18/1632 ,  C23C26/00 ,  C23C26/02 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/68735 ,  H01L21/68792

摘要： An electroless deposition system and electroless deposition stations are provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate shuttle positioned to transfer substrates between the first and second processing stations. The electroless deposition station also includes various fluid delivery and substrate temperature controlling devices to perform a contamination free and uniform electroless deposition process.

摘要翻译： 提供无电沉积系统和无电沉积站。 该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。 无电沉积站包括环境控制的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站和定位成转移的基板梭 第一和第二处理站之间的基板。 无电沉积站还包括各种流体输送和基板温度控制装置，以执行无污染和均匀的无电沉积工艺。

公开(公告)号：US20050160990A1

公开(公告)日：2005-07-28

申请号：US10996342

申请日：2004-11-22

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Russell Ellwanger ,  Ian Pancham ,  Ramakrishna Cheboli

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Russell Ellwanger ,  Ian Pancham ,  Ramakrishna Cheboli

IPC分类号： C23C18/16 ,  H01L21/00 ,  H01L21/288 ,  H01L21/687 ,  C23C16/00 ,  C23F1/00

CPC分类号： C23C18/1632 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/6723 ,  H01L21/68742 ,  H01L21/68771 ,  H01L21/68792 ,  Y10S134/902

摘要： An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure.

摘要翻译： 提供无电沉积系统。 该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。 无电沉积站包括环境受控的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站，以及位于 在第一和第二处理站之间传送衬底。 该系统还包括位于主机上并被配置为访问处理外壳内部的基板传送机器人。

公开(公告)号：US20050101130A1

公开(公告)日：2005-05-12

申请号：US10703769

申请日：2003-11-07

申请人： Sergey Lopatin ,  Arulkumar Shanmugasundram ,  Dmitry Lubomirsky ,  Ian Pancham

发明人： Sergey Lopatin ,  Arulkumar Shanmugasundram ,  Dmitry Lubomirsky ,  Ian Pancham

IPC分类号： C23C18/16 ,  C23C18/18 ,  C23C18/50 ,  H01L21/288 ,  H01L21/44 ,  H01L21/768

CPC分类号： H01L21/76846 ,  C23C18/1651 ,  C23C18/1692 ,  C23C18/1844 ,  C23C18/50 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76874

摘要： A method for fabricating a capping layer with enhanced barrier resistance to both copper and oxygen diffusion, comprises forming a capping layer on a conductive surface of an interconnect, wherein the capping layer comprises cobalt (Co), tungsten (W), rhenium (Re), and at least one of phosphorus (P) and boron (B). In an embodiment of the invention, forming the capping layer comprises exposing the conductive surface to an electroless capping solution comprising a cobalt source, a tungsten source, a rhenium source, and at least one of a phosphorus source and a boron source, and annealing the capping layer.

摘要翻译： 一种用于制造具有对铜和氧扩散的阻挡性能增强的覆盖层的方法，包括在互连的导电表面上形成覆盖层，其中所述覆盖层包括钴（Co），钨（W），铼（Re） ，和磷（P）和硼（B）中的至少一种。 在本发明的一个实施方案中，形成覆盖层包括将导电表面暴露于包含钴源，钨源，铼源和磷源和硼源中的至少一个的无电覆盖溶液中，并将 盖层

公开(公告)号：US20050088647A1

公开(公告)日：2005-04-28

申请号：US10944228

申请日：2004-09-17

申请人： Arulkumar Shanmugasundram ,  Manoocher Birang ,  Ian Pancham ,  Sergey Lopatin

发明人： Arulkumar Shanmugasundram ,  Manoocher Birang ,  Ian Pancham ,  Sergey Lopatin

IPC分类号： C23C18/16 ,  G01B11/06 ,  G01J3/28 ,  G01N21/84 ,  G01N21/95 ,  H01L21/66

CPC分类号： C23C18/1667 ,  C23C18/1651 ,  C23C18/1675 ,  G01B11/0683 ,  G01N21/8422 ,  G01N21/9501

摘要： An apparatus and a method of controlling an electroless deposition process by directing electromagnetic radiation towards the surface of a substrate and detecting the change in intensity of the electromagnetic radiation at one or more wavelengths reflected off features on the surface of the substrate. In one embodiment the detected end of an electroless deposition process step is measured while the substrate is moved relative to the detection mechanism. In another embodiment multiple detection points are used to monitor the state of the deposition process across the surface of the substrate. In one embodiment the detection mechanism is immersed in the electroless deposition fluid on the substrate. In one embodiment a controller is used to monitor, store, and/or control the electroless deposition process by use of stored process values, comparison of data collected at different times, and various calculated time dependent data.

摘要翻译： 通过将电磁辐射引导到衬底的表面并检测在基底表面上的特征反射的一个或多个波长处的电磁辐射的强度变化来控制无电沉积工艺的装置和方法。 在一个实施例中，在基板相对于检测机构移动时测量无电沉积工艺步骤的检测结束。 在另一个实施方案中，多个检测点用于监测穿过基底表面的沉积工艺的状态。 在一个实施例中，检测机构浸没在基板上的无电沉积流体中。 在一个实施例中，控制器用于通过使用存储的过程值，在不同时间收集的数据的比较以及各种计算的时间相关数据来监视，存储和/或控制无电沉积过程。

公开(公告)号：US07138014B2

公开(公告)日：2006-11-21

申请号：US10059572

申请日：2002-01-28

申请人： Joseph J. Stevens ,  Dmitry Lubomirsky ,  Ian Pancham ,  Donald J. K. Olgado ,  Howard E. Grunes ,  Yeuk-Fai Edwin Mok

发明人： Joseph J. Stevens ,  Dmitry Lubomirsky ,  Ian Pancham ,  Donald J. K. Olgado ,  Howard E. Grunes ,  Yeuk-Fai Edwin Mok

IPC分类号： C23C14/00 ,  B05C11/00 ,  B05C3/00

CPC分类号： H01L21/67126 ,  C23C18/1607 ,  C23C18/1619 ,  C23C18/1628 ,  C23C18/165 ,  C23C18/1653 ,  C23C18/1678 ,  C25D7/123 ,  C25D17/001

摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.

公开(公告)号：US06824612B2

公开(公告)日：2004-11-30

申请号：US10036321

申请日：2001-12-26

申请人： Joseph J. Stevens ,  Dmitry Lubomirsky ,  Ian Pancham ,  Donald J. Olgado ,  Howard E. Grunes ,  Yeuk-Fai Edwin Mok ,  Girish Dixit

发明人： Joseph J. Stevens ,  Dmitry Lubomirsky ,  Ian Pancham ,  Donald J. Olgado ,  Howard E. Grunes ,  Yeuk-Fai Edwin Mok ,  Girish Dixit

IPC分类号： B05C502

CPC分类号： H01L21/67167 ,  C23C18/1632 ,  C23C18/1692 ,  H01L21/6723

摘要： A method and apparatus for plating substrates, wherein the apparatus includes a central substrate transfer enclosure having at least one substrate transfer robot positioned therein. A substrate activation chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate plating chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate spin rinse dry chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot, and an annealing chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. At least one substrate pod loader in communication with the substrate transfer chamber and accessible to the at least one substrate transfer robot is also provided.

摘要翻译： 一种用于电镀基板的方法和装置，其中所述装置包括具有至少一个基板传送机器人的中央基板传送外壳。 提供与中心基板传送外壳连通的基板激活室，并且可由至少一个基板传送机器人访问。 提供与中心基板传送外壳连通的基板电镀室，并且可由至少一个基板传送机器人访问。 提供与中央基板传送外壳连通的基板旋转漂洗干燥室，并且可由至少一个基板传送机器人访问，并且提供与中央基板传送外壳连通的退火室，并且可由至少一个 基板传送机器人。 还提供了至少一个与基板传送室连通并且可由至少一个基板传送机器人访问的基板盒装载器。

公开(公告)号：US20050199489A1

公开(公告)日：2005-09-15

申请号：US11090919

申请日：2005-03-25

申请人： Joseph Stevens ,  Dmitry Lubomirsky ,  Ian Pancham ,  Donald Olgado ,  Howard Grunes ,  Yeuk-Fai Mok

发明人： Joseph Stevens ,  Dmitry Lubomirsky ,  Ian Pancham ,  Donald Olgado ,  Howard Grunes ,  Yeuk-Fai Mok

IPC分类号： C23C18/18 ,  C23C18/16 ,  C25D7/12 ,  H01L21/00 ,  H01L21/28 ,  H01L21/288 ,  C25C7/00

CPC分类号： H01L21/67126 ,  C23C18/1607 ,  C23C18/1619 ,  C23C18/1628 ,  C23C18/165 ,  C23C18/1653 ,  C23C18/1678 ,  C25D7/123 ,  C25D17/001

摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.

摘要翻译： 一种沉积包含至少一种选自贵金属，半贵金属，其合金及其组合的金属的催化剂层的装置和方法，其形成在基板上形成的亚微米特征。 贵金属的实例包括钯和铂。 半贵金属的实例包括钴，镍和钨。 可通过无电沉积，电镀或化学气相沉积来沉积催化层。 在一个实施方案中，催化层可以沉积在特征中以用作随后沉积的导电材料的阻挡层。 在另一个实施方案中，催化剂层可以沉积在阻挡层上。 在另一个实施方案中，催化层可以沉积在沉积在阻挡层上的种子层上，以充当种子层中任何不连续性的“贴片”。 一旦沉积了催化层，可以在催化剂层上沉积诸如铜的导电材料。 在一个实施例中，导电材料通过无电沉积沉积在催化剂层上。 在另一个实施方案中，导电材料通过无电沉积然后电镀或随后进行化学气相沉积沉积在催化剂层上。 在另一个实施例中，导电材料通过电镀或化学气相沉积沉积在催化层上。