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公开(公告)号：US20050081785A1
公开(公告)日：2005-04-21
申请号：US10965220
申请日：2004-10-14
IPC分类号： B05C3/00 , B05C19/02 , C23C18/16 , C23C18/28 , C23F1/00 , C25D7/12 , H01L21/288 , H01L21/768
CPC分类号： H01L21/76838 , C23C18/1601 , C23C18/1619 , C23C18/1628 , C23C18/1678 , C23C18/1682 , C23C18/1872 , C23C18/28 , H01L21/288 , Y10S134/902
摘要： Embodiments of the invention generally provide a fluid processing platform. The platform includes a mainframe having a substrate transfer robot, at least one substrate cleaning cell on the mainframe, and at least one processing enclosure. The processing enclosure includes a gas supply positioned in fluid communication with an interior of the processing enclosure, a first fluid processing cell positioned in the enclosure, a first substrate head assembly positioned to support a substrate for processing in the first fluid processing cell, a second fluid processing cell positioned in the enclosure, a second head assembly positioned to support a substrate for processing in the second fluid processing cell, and a substrate shuttle positioned between the first and second fluid processing cells and being configured to transfer substrates between the fluid processing cells and the mainframe robot.
摘要翻译： 本发明的实施例通常提供流体处理平台。 平台包括具有基板传送机器人的主机，主机上的至少一个基板清洁单元，以及至少一个处理机壳。 处理外壳包括定位成与处理外壳的内部流体连通的气体供应源，位于外壳中的第一流体处理单元，定位成支撑基板以在第一流体处理单元中进行处理的第一基板头组件，第二流体处理单元 位于外壳中的流体处理单元，定位成支撑用于在第二流体处理单元中进行处理的基板的第二头部组件，以及位于第一和第二流体处理单元之间的衬底梭，并且构造成将衬底在流体处理单元 和主机机器人。
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2.发明申请Method and tool of chemical doping CoW alloys with Re for increasing barrier properties of electroless capping layers for IC Cu interconnects 失效化学掺杂CoW合金与Re的方法和工具，用于增加IC Cu互连的无电覆盖层的阻隔性能公开(公告)号：US20050101130A1
公开(公告)日：2005-05-12
申请号：US10703769
申请日：2003-11-07
IPC分类号： C23C18/16 , C23C18/18 , C23C18/50 , H01L21/288 , H01L21/44 , H01L21/768
CPC分类号： H01L21/76846 , C23C18/1651 , C23C18/1692 , C23C18/1844 , C23C18/50 , H01L21/288 , H01L21/76849 , H01L21/76858 , H01L21/76874
摘要： A method for fabricating a capping layer with enhanced barrier resistance to both copper and oxygen diffusion, comprises forming a capping layer on a conductive surface of an interconnect, wherein the capping layer comprises cobalt (Co), tungsten (W), rhenium (Re), and at least one of phosphorus (P) and boron (B). In an embodiment of the invention, forming the capping layer comprises exposing the conductive surface to an electroless capping solution comprising a cobalt source, a tungsten source, a rhenium source, and at least one of a phosphorus source and a boron source, and annealing the capping layer.
摘要翻译： 一种用于制造具有对铜和氧扩散的阻挡性能增强的覆盖层的方法，包括在互连的导电表面上形成覆盖层，其中所述覆盖层包括钴（Co），钨（W），铼（Re） ，和磷（P）和硼（B）中的至少一种。 在本发明的一个实施方案中，形成覆盖层包括将导电表面暴露于包含钴源，钨源，铼源和磷源和硼源中的至少一个的无电覆盖溶液中，并将 盖层
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公开(公告)号：US07205233B2
公开(公告)日：2007-04-17
申请号：US10703769
申请日：2003-11-07
IPC分类号： H01L21/28
CPC分类号： H01L21/76846 , C23C18/1651 , C23C18/1692 , C23C18/1844 , C23C18/50 , H01L21/288 , H01L21/76849 , H01L21/76858 , H01L21/76874
摘要： A method for fabricating a capping layer with enhanced barrier resistance to both copper and oxygen diffusion, comprises forming a capping layer on a conductive surface of an interconnect, wherein the capping layer comprises cobalt (Co), tungsten (W), rhenium (Re), and at least one of phosphorus (P) and boron (B). In an embodiment of the invention, forming the capping layer comprises exposing the conductive surface to an electroless capping solution comprising a cobalt source, a tungsten source, a rhenium source, and at least one of a phosphorus source and a boron source, and annealing the capping layer.
摘要翻译： 一种用于制造具有对铜和氧扩散的阻挡性能增强的覆盖层的方法，包括在互连的导电表面上形成覆盖层，其中所述覆盖层包括钴（Co），钨（W），铼（Re） ，和磷（P）和硼（B）中的至少一种。 在本发明的一个实施方案中，形成覆盖层包括将导电表面暴露于包含钴源，钨源，铼源和磷源和硼源中的至少一个的无电覆盖溶液中，并将 盖层
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公开(公告)号：US07341633B2
公开(公告)日：2008-03-11
申请号：US10965220
申请日：2004-10-14
CPC分类号： H01L21/76838 , C23C18/1601 , C23C18/1619 , C23C18/1628 , C23C18/1678 , C23C18/1682 , C23C18/1872 , C23C18/28 , H01L21/288 , Y10S134/902
摘要： Embodiments of the invention generally provide a fluid processing platform. The platform includes a mainframe having a substrate transfer robot, at least one substrate cleaning cell on the mainframe, and at least one processing enclosure. The processing enclosure includes a gas supply positioned in fluid communication with an interior of the processing enclosure, a first fluid processing cell positioned in the enclosure, a first substrate head assembly positioned to support a substrate for processing in the first fluid processing cell, a second fluid processing cell positioned in the enclosure, a second head assembly positioned to support a substrate for processing in the second fluid processing cell, and a substrate shuttle positioned between the first and second fluid processing cells and being configured to transfer substrates between the fluid processing cells and the mainframe robot.
摘要翻译： 本发明的实施例通常提供流体处理平台。 平台包括具有基板传送机器人的主机，主机上的至少一个基板清洁单元，以及至少一个处理机壳。 处理外壳包括定位成与处理外壳的内部流体连通的气体供应源，位于外壳中的第一流体处理单元，定位成支撑基板以在第一流体处理单元中进行处理的第一基板头组件，第二流体处理单元 位于外壳中的流体处理单元，定位成支撑用于在第二流体处理单元中进行处理的基板的第二头部组件，以及位于第一和第二流体处理单元之间的衬底梭，并且构造成将衬底在流体处理单元 和主机机器人。
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5.发明申请Heterogeneous activation layers formed by ionic and electroless reactions used for IC interconnect capping layers 审中-公开通过用于IC互连覆盖层的离子和无电反应形成的非均相活化层公开(公告)号：US20050085031A1
公开(公告)日：2005-04-21
申请号：US10967099
申请日：2004-10-15
申请人： Sergey Lopatin , Arulkumar Shanmugasundram , Yosef Shacham-Diamand , Timothy Weidman , Dmitry Lubomirsky
发明人： Sergey Lopatin , Arulkumar Shanmugasundram , Yosef Shacham-Diamand , Timothy Weidman , Dmitry Lubomirsky
IPC分类号： C23C18/18 , C23C18/50 , H01L21/285 , H01L21/288 , H01L21/768 , H01L21/8238
CPC分类号： H01L21/76849 , C23C18/1844 , C23C18/50 , H01L21/28562 , H01L21/288 , H01L21/76867 , H01L21/76868 , H01L21/76874
摘要： Embodiments of the invention generally provide compositions of activation-alloy solutions, methods to deposit activation-alloys and electronic devices including activation-alloys and capping layers. In one embodiment, a method for depositing a capping layer for a semiconductor device is provided which includes exposing a conductive layer on a substrate surface to an activation-alloy solution, forming an activation-alloy layer on the conductive layer using the activation-alloy solution, and depositing the capping layer on the activation-alloy layer using an electroless deposition solution.
摘要翻译： 本发明的实施方案通常提供活化合金溶液的组合物，沉积活化合金的方法和包括活化合金和覆盖层的电子器件。 在一个实施例中，提供了一种用于沉积半导体器件的覆盖层的方法，其包括将基板表面上的导电层暴露于活化合金溶液，使用活化合金溶液在导电层上形成活化合金层 ，并使用无电镀沉积溶液将所述封盖层沉积在所述活化合金层上。
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公开(公告)号：US20050088647A1
公开(公告)日：2005-04-28
申请号：US10944228
申请日：2004-09-17
CPC分类号： C23C18/1667 , C23C18/1651 , C23C18/1675 , G01B11/0683 , G01N21/8422 , G01N21/9501
摘要： An apparatus and a method of controlling an electroless deposition process by directing electromagnetic radiation towards the surface of a substrate and detecting the change in intensity of the electromagnetic radiation at one or more wavelengths reflected off features on the surface of the substrate. In one embodiment the detected end of an electroless deposition process step is measured while the substrate is moved relative to the detection mechanism. In another embodiment multiple detection points are used to monitor the state of the deposition process across the surface of the substrate. In one embodiment the detection mechanism is immersed in the electroless deposition fluid on the substrate. In one embodiment a controller is used to monitor, store, and/or control the electroless deposition process by use of stored process values, comparison of data collected at different times, and various calculated time dependent data.
摘要翻译： 通过将电磁辐射引导到衬底的表面并检测在基底表面上的特征反射的一个或多个波长处的电磁辐射的强度变化来控制无电沉积工艺的装置和方法。 在一个实施例中，在基板相对于检测机构移动时测量无电沉积工艺步骤的检测结束。 在另一个实施方案中，多个检测点用于监测穿过基底表面的沉积工艺的状态。 在一个实施例中，检测机构浸没在基板上的无电沉积流体中。 在一个实施例中，控制器用于通过使用存储的过程值，在不同时间收集的数据的比较以及各种计算的时间相关数据来监视，存储和/或控制无电沉积过程。
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公开(公告)号：US07273813B2
公开(公告)日：2007-09-25
申请号：US11053501
申请日：2005-02-08
IPC分类号： H01L21/44
CPC分类号： C23C18/1844 , C11D7/06 , C11D7/08 , C11D7/265 , C11D11/0047 , C23F1/18 , C23G1/103 , H01L21/02074 , H01L21/76826 , H01L21/76849 , H01L21/76877 , H01L21/76883
摘要： A method and cleaning solution that removes contaminants from a dielectric material and polished surfaces of copper interconnect structures prior to an electroless deposition of a capping layer without substantially adversely affecting the interconnect formed therefrom are disclosed. The cleaning solution includes combinations of a core mixture and sulfuric acid or sulfonic compounds such as sulfonic acids that include methanesulfonic acid. In one embodiment, the core mixture includes a citric acid solution and a pH adjuster such as tetra-methyl ammonium hydroxide or ammonia. One embodiment of the method includes providing a planarized substrate, applying the cleaning solution to the substrate to simultaneously clean at least one metal feature and a dielectric material of the substrate, and depositing the metal capping layer selectively on the at least one metal feature using electroless deposition.
摘要翻译： 公开了一种方法和清洁溶液，其在电绝缘沉积覆盖层之前从电介质材料和铜互连结构的抛光表面去除污染物，而基本上不利地影响由其形成的互连。 清洁溶液包括核混合物和硫酸或磺酸化合物如包括甲磺酸的磺酸的组合。 在一个实施方案中，核心混合物包括柠檬酸溶液和pH调节剂如四甲基氢氧化铵或氨。 该方法的一个实施例包括提供平坦化的基板，将清洁溶液施加到基板上以同时清洁基板的至少一个金属特征和介电材料，并且使用无电镀将金属覆盖层选择性地沉积在至少一个金属特征上 沉积
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公开(公告)号：US20080121276A1
公开(公告)日：2008-05-29
申请号：US11564812
申请日：2006-11-29
申请人： Sergey Lopatin , Arulkumar Shanmugasundram , Robert Z. Bachrach , Charles Gay , David Eaglesham
发明人： Sergey Lopatin , Arulkumar Shanmugasundram , Robert Z. Bachrach , Charles Gay , David Eaglesham
IPC分类号： H01L31/00
CPC分类号： H01L31/022425 , H01L31/022433 , H01L31/02245 , Y02E10/50
摘要： A metal contact structure of a solar cell substrate includes a contact with a conductive layer or a capping layer that is formed using an electroless plating process. The contact may be disposed within a hole formed through the solar cell substrate or on a non-light-receiving surface of the solar cell substrate. The electroless plating process for the conductive layer uses a seed layer that includes an activation layer for electroless plating.
摘要翻译： 太阳能电池基板的金属接触结构包括与使用无电解电镀工艺形成的导电层或覆盖层的接触。 接触可以设置在通过太阳能电池基板形成的孔内或太阳能电池基板的非光接收表面上。 用于导电层的化学镀处理使用包括用于无电镀的活化层的晶种层。
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公开(公告)号：US07534298B2
公开(公告)日：2009-05-19
申请号：US10944228
申请日：2004-09-17
IPC分类号： B05D3/02
CPC分类号： C23C18/1667 , C23C18/1651 , C23C18/1675 , G01B11/0683 , G01N21/8422 , G01N21/9501
摘要： An apparatus and a method of controlling an electroless deposition process by directing electromagnetic radiation towards the surface of a substrate and detecting the change in intensity of the electromagnetic radiation at one or more wavelengths reflected off features on the surface of the substrate. In one embodiment the detected end of an electroless deposition process step is measured while the substrate is moved relative to the detection mechanism. In another embodiment multiple detection points are used to monitor the state of the deposition process across the surface of the substrate. In one embodiment the detection mechanism is immersed in the electroless deposition fluid on the substrate. In one embodiment a controller is used to monitor, store, and/or control the electroless deposition process by use of stored process values, comparison of data collected at different times, and various calculated time dependent data.
摘要翻译： 通过将电磁辐射引导到衬底的表面并检测在基底表面上的特征反射的一个或多个波长处的电磁辐射的强度变化来控制无电沉积工艺的装置和方法。 在一个实施例中，在基板相对于检测机构移动时测量无电沉积工艺步骤的检测结束。 在另一个实施方案中，多个检测点用于监测穿过基底表面的沉积工艺的状态。 在一个实施例中，检测机构浸没在基板上的无电沉积流体中。 在一个实施例中，控制器用于通过使用存储的过程值，在不同时间收集的数据的比较以及各种计算的时间相关数据来监视，存储和/或控制无电沉积过程。
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公开(公告)号：US07256111B2
公开(公告)日：2007-08-14
申请号：US10934850
申请日：2004-09-03
CPC分类号： H01L21/02074 , H01L21/288 , H01L21/67161 , H01L21/6723 , H01L21/76849 , H01L21/76862 , H01L21/76864
摘要： Embodiments of the present invention relate to an apparatus and method of annealing substrates in a thermal anneal chamber and/or a plasma anneal chamber before electroless deposition thereover. In one embodiment, annealing in a thermal anneal chamber includes heating the substrate in a vacuum environment while providing a gas, such as noble gases, hydrogen gas, other reducing gases, nitrogen gas, other non-reactive gases, and combinations thereof. In another embodiment, annealing in a plasma chamber comprises plasma annealing the substrate in a plasma, such as a plasma from an argon gas, helium gas, hydrogen gas, and combinations thereof.
摘要翻译： 本发明的实施例涉及在其之前的无电沉积之前在热退火室和/或等离子体退火室中退火衬底的装置和方法。 在一个实施例中，热退火室中的退火包括在真空环境中加热衬底，同时提供气体，例如惰性气体，氢气，其它还原气体，氮气，其它非反应性气体及其组合。 在另一个实施例中，等离子体室中的退火包括等离子体等离子体等离子体退火，例如来自氩气，氦气，氢气及其组合的等离子体。
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