公开(公告)号：US20050181226A1

公开(公告)日：2005-08-18

申请号：US11040962

申请日：2005-01-22

申请人： Timothy Weidman ,  Ian Pancham ,  Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Yosef Shacham-Diamand ,  Farhad Moghadam

发明人： Timothy Weidman ,  Ian Pancham ,  Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Yosef Shacham-Diamand ,  Farhad Moghadam

IPC分类号： C23C18/16 ,  C23C18/50 ,  H01L21/02 ,  H01L21/288 ,  H01L21/768 ,  B05C3/00 ,  B05D1/18

CPC分类号： C23C18/1683 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/50 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76874 ,  Y10T428/12

摘要： A method and apparatus for electrolessly depositing a multilayer film using a fluid processing solution(s) that can clean and then electrolessly deposit a metal films having discrete or varying composition onto a conductive surface using a single processing cell. The process advantageously includes in-situ cleaning step in order to minimize the formation of oxides on the conductive surfaces, by minimizing or preventing the exposure of the conductive surfaces to oxygen (e.g., air) between the cleaning step and an electroless deposition process step(s). In one aspect, the chemical components used in the fluid processing solution(s) are selected so that the interaction of various chemical components will not drastically change the desirable properties of each of the interacting fluids, generate particles in the fluid lines or on the surface of the substrate, and/or generate a significant amount of heat which can damage the hardware or significantly change the electroless process results. In another aspect, no rinsing steps are required between the various deposition steps used to form the various layers, since the processing fluids are selected so that they are compatible with each other. In another aspect, throughout the process the conductive surfaces are continually in contact with various chemical components that will inhibit oxidation of the conductive surfaces and/or reduce the oxidized metal surfaces. In one aspect, a multilayer structure can formed on the surface of the conductive surface using the continuous electroless deposition process where the first layer of the multilayer structure has at least two of the following elements cobalt (Co), tungsten (W), phosphorus (P) or boron (B); and a second layer contains at least two of the following elements cobalt (Co), boron (B) or phosphorus (P). Formation of a multilayer structure on the conductive surface may have advantage since each deposited layer can have differing properties which when placed together will form a layer that has improved properties over a single deposited layer.

公开(公告)号：US20050085031A1

公开(公告)日：2005-04-21

申请号：US10967099

申请日：2004-10-15

申请人： Sergey Lopatin ,  Arulkumar Shanmugasundram ,  Yosef Shacham-Diamand ,  Timothy Weidman ,  Dmitry Lubomirsky

发明人： Sergey Lopatin ,  Arulkumar Shanmugasundram ,  Yosef Shacham-Diamand ,  Timothy Weidman ,  Dmitry Lubomirsky

IPC分类号： C23C18/18 ,  C23C18/50 ,  H01L21/285 ,  H01L21/288 ,  H01L21/768 ,  H01L21/8238

CPC分类号： H01L21/76849 ,  C23C18/1844 ,  C23C18/50 ,  H01L21/28562 ,  H01L21/288 ,  H01L21/76867 ,  H01L21/76868 ,  H01L21/76874

摘要： Embodiments of the invention generally provide compositions of activation-alloy solutions, methods to deposit activation-alloys and electronic devices including activation-alloys and capping layers. In one embodiment, a method for depositing a capping layer for a semiconductor device is provided which includes exposing a conductive layer on a substrate surface to an activation-alloy solution, forming an activation-alloy layer on the conductive layer using the activation-alloy solution, and depositing the capping layer on the activation-alloy layer using an electroless deposition solution.

摘要翻译： 本发明的实施方案通常提供活化合金溶液的组合物，沉积活化合金的方法和包括活化合金和覆盖层的电子器件。 在一个实施例中，提供了一种用于沉积半导体器件的覆盖层的方法，其包括将基板表面上的导电层暴露于活化合金溶液，使用活化合金溶液在导电层上形成活化合金层 ，并使用无电镀沉积溶液将所述封盖层沉积在所述活化合金层上。

公开(公告)号：US20050263066A1

公开(公告)日：2005-12-01

申请号：US11043442

申请日：2005-01-26

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Russell Ellwanger ,  Ian Pancham ,  Ramakrishna Cheboli ,  Timothy Weidman

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Russell Ellwanger ,  Ian Pancham ,  Ramakrishna Cheboli ,  Timothy Weidman

IPC分类号： B05D3/10 ,  C23C18/16 ,  C23F1/00 ,  H01L21/00 ,  H01L21/306

CPC分类号： H01L21/67155 ,  C23C18/1628 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/6723

摘要： An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure. The system also includes a substrate a fluid delivery system that is configured to deliver a processing fluid by use of a spraying process to a substrate mounted in the processing enclosure.

摘要翻译： 提供无电沉积系统。 该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。 无电沉积站包括环境受控的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站，以及位于 在第一和第二处理站之间传送衬底。 该系统还包括位于主机上并被配置为访问处理外壳内部的基板传送机器人。 该系统还包括一个流体输送系统，该流体输送系统被配置成通过使用喷射过程将处理流体输送到安装在处理外壳中的基板。

公开(公告)号：US20050081785A1

公开(公告)日：2005-04-21

申请号：US10965220

申请日：2004-10-14

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Ian Pancham ,  Sergey Lopatin

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Ian Pancham ,  Sergey Lopatin

IPC分类号： B05C3/00 ,  B05C19/02 ,  C23C18/16 ,  C23C18/28 ,  C23F1/00 ,  C25D7/12 ,  H01L21/288 ,  H01L21/768

CPC分类号： H01L21/76838 ,  C23C18/1601 ,  C23C18/1619 ,  C23C18/1628 ,  C23C18/1678 ,  C23C18/1682 ,  C23C18/1872 ,  C23C18/28 ,  H01L21/288 ,  Y10S134/902

摘要： Embodiments of the invention generally provide a fluid processing platform. The platform includes a mainframe having a substrate transfer robot, at least one substrate cleaning cell on the mainframe, and at least one processing enclosure. The processing enclosure includes a gas supply positioned in fluid communication with an interior of the processing enclosure, a first fluid processing cell positioned in the enclosure, a first substrate head assembly positioned to support a substrate for processing in the first fluid processing cell, a second fluid processing cell positioned in the enclosure, a second head assembly positioned to support a substrate for processing in the second fluid processing cell, and a substrate shuttle positioned between the first and second fluid processing cells and being configured to transfer substrates between the fluid processing cells and the mainframe robot.

摘要翻译： 本发明的实施例通常提供流体处理平台。 平台包括具有基板传送机器人的主机，主机上的至少一个基板清洁单元，以及至少一个处理机壳。 处理外壳包括定位成与处理外壳的内部流体连通的气体供应源，位于外壳中的第一流体处理单元，定位成支撑基板以在第一流体处理单元中进行处理的第一基板头组件，第二流体处理单元 位于外壳中的流体处理单元，定位成支撑用于在第二流体处理单元中进行处理的基板的第二头部组件，以及位于第一和第二流体处理单元之间的衬底梭，并且构造成将衬底在流体处理单元 和主机机器人。

公开(公告)号：US20050260345A1

公开(公告)日：2005-11-24

申请号：US11175251

申请日：2005-07-06

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Ian Pancham

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Ian Pancham

IPC分类号： B05C11/02 ,  B05C13/00 ,  B05D3/12 ,  C23C18/16 ,  C23C26/00 ,  C23C26/02 ,  H01L21/00 ,  H01L21/687

CPC分类号： H01L21/68728 ,  C23C18/1619 ,  C23C18/1632 ,  C23C26/00 ,  C23C26/02 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/68735 ,  H01L21/68792

摘要： An electroless deposition system and electroless deposition stations are provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate shuttle positioned to transfer substrates between the first and second processing stations. The electroless deposition station also includes various fluid delivery and substrate temperature controlling devices to perform a contamination free and uniform electroless deposition process.

摘要翻译： 提供无电沉积系统和无电沉积站。 该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。 无电沉积站包括环境控制的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站和定位成转移的基板梭 第一和第二处理站之间的基板。 无电沉积站还包括各种流体输送和基板温度控制装置，以执行无污染和均匀的无电沉积工艺。

公开(公告)号：US20050160990A1

公开(公告)日：2005-07-28

申请号：US10996342

申请日：2004-11-22

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Russell Ellwanger ,  Ian Pancham ,  Ramakrishna Cheboli

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Russell Ellwanger ,  Ian Pancham ,  Ramakrishna Cheboli

IPC分类号： C23C18/16 ,  H01L21/00 ,  H01L21/288 ,  H01L21/687 ,  C23C16/00 ,  C23F1/00

CPC分类号： C23C18/1632 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/6723 ,  H01L21/68742 ,  H01L21/68771 ,  H01L21/68792 ,  Y10S134/902

摘要： An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure.

摘要翻译： 提供无电沉积系统。 该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。 无电沉积站包括环境受控的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站，以及位于 在第一和第二处理站之间传送衬底。 该系统还包括位于主机上并被配置为访问处理外壳内部的基板传送机器人。

公开(公告)号：US20050101130A1

公开(公告)日：2005-05-12

申请号：US10703769

申请日：2003-11-07

申请人： Sergey Lopatin ,  Arulkumar Shanmugasundram ,  Dmitry Lubomirsky ,  Ian Pancham

发明人： Sergey Lopatin ,  Arulkumar Shanmugasundram ,  Dmitry Lubomirsky ,  Ian Pancham

IPC分类号： C23C18/16 ,  C23C18/18 ,  C23C18/50 ,  H01L21/288 ,  H01L21/44 ,  H01L21/768

CPC分类号： H01L21/76846 ,  C23C18/1651 ,  C23C18/1692 ,  C23C18/1844 ,  C23C18/50 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76874

摘要： A method for fabricating a capping layer with enhanced barrier resistance to both copper and oxygen diffusion, comprises forming a capping layer on a conductive surface of an interconnect, wherein the capping layer comprises cobalt (Co), tungsten (W), rhenium (Re), and at least one of phosphorus (P) and boron (B). In an embodiment of the invention, forming the capping layer comprises exposing the conductive surface to an electroless capping solution comprising a cobalt source, a tungsten source, a rhenium source, and at least one of a phosphorus source and a boron source, and annealing the capping layer.

摘要翻译： 一种用于制造具有对铜和氧扩散的阻挡性能增强的覆盖层的方法，包括在互连的导电表面上形成覆盖层，其中所述覆盖层包括钴（Co），钨（W），铼（Re） ，和磷（P）和硼（B）中的至少一种。 在本发明的一个实施方案中，形成覆盖层包括将导电表面暴露于包含钴源，钨源，铼源和磷源和硼源中的至少一个的无电覆盖溶液中，并将 盖层

公开(公告)号：US20060251800A1

公开(公告)日：2006-11-09

申请号：US11385344

申请日：2006-03-20

申请人： Timothy Weidman ,  Kapila Wijekoon ,  Zhize Zhu ,  Avgerinos Gelatos ,  Amit Khandelwal ,  Arulkumar Shanmugasundram ,  Michael Yang ,  Fang Mei ,  Farhad Moghadam

发明人： Timothy Weidman ,  Kapila Wijekoon ,  Zhize Zhu ,  Avgerinos Gelatos ,  Amit Khandelwal ,  Arulkumar Shanmugasundram ,  Michael Yang ,  Fang Mei ,  Farhad Moghadam

IPC分类号： B05D5/12

CPC分类号： C23C18/1678 ,  B82Y30/00 ,  C23C16/0227 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C18/1608 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/31 ,  C23C18/32 ,  C23C18/34 ,  C23C18/38 ,  C23C18/40 ,  C23C18/48 ,  C25D5/34 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention generally provide methods of filling contact level features formed in a semiconductor device by depositing a barrier layer over the contact feature and then filing the layer using an PVD, CVD, ALD, electrochemical plating process (ECP) and/or electroless deposition processes. In one embodiment, the barrier layer has a catalytically active surface that will allow the electroless deposition of a metal on the barrier layer. In one aspect, the electrolessly deposited metal is copper or a copper alloy. In one aspect, the contact level feature is filled with a copper alloy by use of an electroless deposition process. In another aspect, a copper alloy is used to from a thin conductive copper layer that is used to subsequently fill features with a copper containing material by use of an ECP, PVD, CVD, and/or ALD deposition process. In one embodiment, a portion of the barrier layer is purposely allowed to react with traces of residual oxide at the silicon junction of the contact level feature to form a low resistance connection.

公开(公告)号：US20070004201A1

公开(公告)日：2007-01-04

申请号：US11385037

申请日：2006-03-20

申请人： Dmitry Lubomirsky ,  Timothy Weidman ,  Arulkumar Shanmugasundram ,  Nicolay Kovarsky ,  Kapila Wijekoon

发明人： Dmitry Lubomirsky ,  Timothy Weidman ,  Arulkumar Shanmugasundram ,  Nicolay Kovarsky ,  Kapila Wijekoon

IPC分类号： H01L21/44

CPC分类号： H01L21/288 ,  C23C18/1608 ,  C23C18/165 ,  C23C18/1831 ,  C23C18/38 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76874

摘要： Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide.

摘要翻译： 本发明的实施例提供了通过在特征内沉积种子层并随后在无电沉积工艺期间用含铜材料填充该特征而在基底上的接触特征内形成导电材料的方法。 在一个实例中，铜无电解沉积溶液含有形成凸形或凹陷铜表面的矫直机。 在另一个实例中，在准直的PVD工艺期间，将籽晶层选择性地沉积在孔的底表面上，同时留下基本上不含种子材料的侧壁。 在另一个实例中，种子层通过PVD工艺顺应地沉积，随后种子层和底层的一部分被等离子体蚀刻以暴露下面的接触表面。 在另一个实例中，通过使用化学前体四氧化钌的ALD工艺在暴露的接触表面上形成钌籽晶层。

公开(公告)号：US20070111519A1

公开(公告)日：2007-05-17

申请号：US11428230

申请日：2006-06-30

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Allen D'Ambra ,  Timothy Weidman ,  Michael Stewart ,  Eugene Rabinovich ,  Svetlana Sherman ,  Manoocher Birang ,  Yaxin Wang ,  Michael Yang ,  Bradley Hansen

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Allen D'Ambra ,  Timothy Weidman ,  Michael Stewart ,  Eugene Rabinovich ,  Svetlana Sherman ,  Manoocher Birang ,  Yaxin Wang ,  Michael Yang ,  Bradley Hansen

IPC分类号： H01L21/44

CPC分类号： H01L21/288 ,  C23C18/1619 ,  C23C18/1653 ,  C23C18/168 ,  C23C18/1682 ,  C23C18/1685 ,  C23C18/1689 ,  C25D7/123 ,  C25D17/001 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02087 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/67051 ,  H01L21/6719 ,  H01L21/6723 ,  H01L21/67751 ,  H01L21/68785 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76873 ,  H01L21/76874

摘要： Embodiments of the invention provide methods for depositing a material onto a surface of a substrate by using one or more electroless, electrochemical plating, CVD and/or ALD processes. Embodiments of the invention provide a method for depositing a seed layer on a substrate with an electroless process and to subsequently fill interconnect features on the substrate with an ECP process on a single substrate processing platform. Other aspects provide a method for depositing a seed layer on a substrate, fill interconnect features on a substrate, or sequentially deposit both a seed layer and fill interconnect features on the substrate. One embodiment provides a method for forming a capping layer over substrate interconnects. Methods include the use of a vapor dryer for pre- and post-deposition cleaning of substrates as well as a brush box chamber for post-deposition cleaning.

摘要翻译： 本发明的实施方案提供了通过使用一种或多种化学镀，CVD和/或ALD工艺将材料沉积到衬底的表面上的方法。 本发明的实施方案提供了一种用于在基板上沉积种子层的方法，该方法具有无电解方法，并随后在单个基板处理平台上用ECP工艺填充基板上的互连特征。 其它方面提供了一种用于在衬底上沉积种子层的方法，在衬底上填充互连特征，或者在衬底上顺序地沉积种子层和填充互连特征。 一个实施例提供了一种在衬底互连上形成覆盖层的方法。 方法包括使用蒸气干燥器进行基板的沉积前和沉积后清洁以及用于后沉积清洁的刷盒室。