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    Method of making a split gate non-volatile floating gate memory cell having a separate erase gate, and a memory cell made thereby
    6.
    发明授权
    Method of making a split gate non-volatile floating gate memory cell having a separate erase gate, and a memory cell made thereby 有权
    制造具有单独的擦除栅极的分离栅极非易失性浮动栅极存储单元以及由此形成的存储单元的方法

    公开(公告)号：US09190532B2

    公开(公告)日：2015-11-17

    申请号：US14240440

    申请日：2012-08-08

    申请人： Chunming Wang ,  Baowei Qiao ,  Zufa Zhang ,  Yi Zhang ,  Shiuh Luen Wang ,  Wen-Juei Lu

    发明人： Chunming Wang ,  Baowei Qiao ,  Zufa Zhang ,  Yi Zhang ,  Shiuh Luen Wang ,  Wen-Juei Lu

    IPC分类号： H01L29/788 ,  H01L21/28 ,  H01L29/423 ,  H01L29/66 ,  H01L27/115

    CPC分类号： H01L29/788 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42328 ,  H01L29/66825 ,  H01L29/66833

    摘要： A non-volatile memory cell has a single crystalline substrate of a first conductivity type with a top surface. A first region of a second conductivity type is in the substrate along the top surface. A second region of the second conductivity type is in the substrate along the top surface, spaced apart from the first region. A channel region is the first region and the second region. A word line gate is positioned over a first portion of the channel region, immediately adjacent to the first region. The word line gate is spaced apart from the channel region by a first insulating layer. A floating gate is positioned over another portion of the channel region. The floating gate has a lower surface separated from the channel region by a second insulating layer, and an upper surface opposite the lower surface. The floating gate has a first side wall adjacent to but separated from the word line gate; and a second side wall opposite the first side wall. The second side wall and the upper surface form a sharp edge, with the second side wall greater in length than the first side wall. The upper surface slopes upward from the first side wall to the second side wall. A coupling gate is positioned over the upper surface of the floating gate and is insulated therefrom by a third insulating layer. An erase gate is positioned adjacent to the second side wall of the floating gate. The erase gate is positioned over the second region and insulated therefrom.

    摘要翻译： 非易失性存储单元具有具有顶表面的第一导电类型的单晶衬底。 第二导电类型的第一区域沿着顶表面在衬底中。 第二导电类型的第二区域沿着顶表面在与第一区域间隔开的衬底中。 通道区域是第一区域和第二区域。 字线门位于与第一区域紧邻的沟道区域的第一部分上方。 字线栅极通过第一绝缘层与沟道区间隔开。 浮动栅极位于通道区域的另一部分上。 浮栅具有通过第二绝缘层与沟道区分离的下表面和与下表面相对的上表面。 浮栅具有与字线门相邻但与字线门隔开的第一侧壁; 以及与第一侧壁相对的第二侧壁。 第二侧壁和上表面形成锋利的边缘，第二侧壁的长度大于第一侧壁。 上表面从第一侧壁向上倾斜到第二侧壁。 耦合栅极位于浮动栅极的上表面上方，并通过第三绝缘层与其隔离。 擦除栅极位于浮动栅极的第二侧壁附近。 擦除栅极定位在第二区域上并与之绝缘。

    SEMICONDUCTOR NANOCRYSTALS AND METHODS OF PREPARATION
    10.
    发明申请
    SEMICONDUCTOR NANOCRYSTALS AND METHODS OF PREPARATION 有权
    半导体纳米晶体及其制备方法

    公开(公告)号：US20130069018A1

    公开(公告)日：2013-03-21

    申请号：US13572012

    申请日：2012-08-10

    申请人： ZHENGGUO ZHU ,  Jonathan S. Steckel ,  Craig Breen ,  Justin W. Kamplain ,  Inia Song ,  Chunming Wang

    发明人： ZHENGGUO ZHU ,  Jonathan S. Steckel ,  Craig Breen ,  Justin W. Kamplain ,  Inia Song ,  Chunming Wang

    IPC分类号： C01B25/08 ,  H01B1/12 ,  B82Y30/00 ,  B82Y40/00

    CPC分类号： C30B29/40 ,  B01J13/02 ,  B82Y30/00 ,  B82Y40/00 ,  C01P2004/64 ,  C30B7/14 ,  C30B28/04 ,  C30B29/48 ,  C30B29/60 ,  H01L21/02601 ,  H01L33/30 ,  H01L33/305

    摘要： A method for preparing semiconductor nanocrystals comprises reacting cation precursors and anion precursors in a reaction mixture including one or more acids, one or more phenol compounds, and a solvent to produce semiconductor nanocrystals having a predetermined composition. A method for forming a coating on at least a portion of a population of semiconductor nanocrystals is also disclosed. The method comprises forming a first mixture including a population of semiconductor nanocrystals, one or more amine compounds, and a first solvent; adding cation precursors and anion precursors to the first mixture at a temperature sufficient for growing a semiconductor material on at least a portion of an outer surface of at least a portion of the population of semiconductor nanocrystals; and initiating addition of one or more acids to the first mixture after addition of the cation and anion precursors is initiated. Semiconductor nanocrystals and populations thereof are also disclosed.

    摘要翻译： 制备半导体纳米晶体的方法包括在包括一种或多种酸，一种或多种酚化合物和溶剂的反应混合物中使阳离子前体和阴离子前体反应，以产生具有预定组成的半导体纳米晶体。 还公开了在半导体纳米晶体群的至少一部分上形成涂层的方法。 该方法包括形成包括半导体纳米晶体群，一种或多种胺化合物和第一溶剂的第一混合物; 在足以在至少一部分半导体纳米晶体的外表面的至少一部分上生长半导体材料的温度下将阳离子前体和阴离子前体添加到第一混合物中; 并且开始在加入阳离子和阴离子前体之后开始向第一混合物中加入一种或多种酸。 还公开了半导体纳米晶体及其群体。